QPD1008L 125W, 50V, DC 3.2 GHz, GaN RF Transistor

Size: px
Start display at page:

Download "QPD1008L 125W, 50V, DC 3.2 GHz, GaN RF Transistor"

Transcription

1 QPD8L General Description The QPD8L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz with a V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Product Features Frequency: DC to 3.2 GHz Output Power (P3dB) 1 : 162 W Linear Gain 1 : 17.5 db Typical PAE3dB 1 : 72% Operating Voltage: V Low thermal resistance package CW and Pulse capable Note 2 GHz Applications Military radar Civilian radar Land mobile and military radio communications Test instrumenation Wideband or narrowband amplifiers Jammers Avionics Ordering info Part No. ECCN Description QPD8L EAR99 DC 3.2 GHz RF Transistor QPD8LPCB401 EAR GHz EVB Rev. B - 1 of 22- Disclaimer: Subject to change without notice

2 QPD8L Absolute Maximum Ratings 1 Parameter Rating Units Breakdown Voltage, BVD +145 V Gate Voltage Range, VG -7 to +2 V Drain Current, IDMAX.4 A Gate Current Range, IG See page 7. ma Power Dissipation, CW, PDISS, Base Temperature = 85 C 79 W RF Input Power, CW, Ω, T = 25 C +40 dbm Channel Temperature, TCH 275 C Mounting Temperature (30 Seconds) 3 C Storage Temperature 40 to +1 C 1.. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions 1 Parameter Min Typ Max Units Operating Temperature Range C Drain Voltage Range, VD V Drain Current, ID A Drain Bias Current, IDQ 2 ma Gate Voltage, VG V Channel Temperature (TCH) 2 C Power Dissipation, CW (PD) 2 71 W Power Dissipation, Pulsed (PD) 2, W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package at 85 C 3. Drain current at P3dB, Pulse Width = 128 us, Duty Cycle = % 4. To be adjusted for desired IDQ Rev. B - 2 of 22- Disclaimer: Subject to change without notice

3 QPD8L Pulsed Characterization Load-Pull Performance Power Tuned 1 Parameters Typical Values Unit Frequency, F GHz Linear Gain, GLIN db Output Power at 3dB compression point, P3dB dbm Power-Added-Efficiency at 3dB compression point, PAE3dB % Gain at 3dB compression point db 1. Test conditions unless otherwise noted: VD = + V, ID = 2 ma, Temp = +25 C Pulsed Characterization Load-Pull Performance Efficiency Tuned 1 Parameters Typical Values Unit Frequency GHz Linear Gain, GLIN db Output Power at 3dB compression point, P3dB dbm Power-Added-Efficiency at 3dB compression point, PAE3dB % Gain at 3dB compression point, G3dB db 1. Test conditions unless otherwise noted: VD = + V, IDQ = 2 ma, Temp = +25 C RF Characterization EVB1 Performance at 1.09 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN db Output Power at 3dB compression point, P3dB 51.2 dbm Drain Efficiency at 3dB compression point, DEFF3dB 73.5 % Gain at 3dB compression point, G3dB 17 db 1. VD = + V, IDQ = 2 ma, Temp = +25 C, Pulse Width = 128 us, Duty Cycle = % RF Characterization Mismatch Ruggedness at 1.09 GHz Symbol Parameter db Compression Typical VSWR Impedance Mismatch Ruggedness 3 :1 Test conditions unless otherwise noted: TA = 25 C, VD = V, IDQ = 2 ma Driving input power is determined at pulsed 3dB compression under matched condition at EVB output connector. Rev. B - 3 of 22- Disclaimer: Subject to change without notice

4 QPD8L Median Lifetime 1 Median Lifetime, T M (Hours) 1.00E E E E E E E E E E+ 1.00E E E E E+05 Median Lifetime vs. Channel Temperature Channel Temperature, T CH ( C) 1 For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle. Rev. B - 4 of 22- Disclaimer: Subject to change without notice

5 Thermal and Reliability Information - Pulsed 300 QPD8L Peak Channel Temperature vs. Pulsed Dissipation Power 2 Peak Channel Temperature o C us, % Pulsed 1E6 hours reliability temperature limit Pulsed Dissipation Power, W Parameter Conditions Values Units Thermal Resistance (θjc) 1.00 C/W 85 C Case Peak Channel Temperature (TCH) 6 C 21 W Pdiss, 128 us PW, % DC Median Lifetime (TM) 1.1E13 Hrs Thermal Resistance (θjc) 1.07 C/W 85 C Case Peak Channel Temperature (TCH) 130 C 42 W Pdiss, 128 us PW, % DC Median Lifetime (TM) 5.2E11 Hrs Thermal Resistance (θjc) 1.11 C/W 85 C Case Peak Channel Temperature (TCH) 155 C 63 W Pdiss, 128 us PW, % DC Median Lifetime (TM) 3.2E Hrs Thermal Resistance (θjc) 1.17 C/W 85 C Case Peak Channel Temperature (TCH) 183 C 84 W Pdiss, 128 us PW, % DC Median Lifetime (TM) 2.0E9 Hrs Thermal Resistance (θjc) 1.23 C/W 85 C Case Peak Channel Temperature (TCH) 214 C 5 W Pdiss, 128 us PW, % DC Median Lifetime (TM) 1.4E8 Hrs Thermal Resistance (θjc) 1.29 C/W 85 C Case Peak Channel Temperature (TCH) 248 C 126 W Pdiss, 128 us PW, % DC Median Lifetime (TM) 9.8E6 Hrs Rev. B - 5 of 22- Disclaimer: Subject to change without notice

6 Thermal and Reliability Information - CW QPD8L 300 Maximum Channel Temperature vs. CW Dissipation Power 2 Maximum Channel Temperature o C CW 1E6 hours reliability temperature limit CW Dissipation Power, W Parameter Conditions Values Units Thermal Resistance (θjc) 1.82 C/W 85 C Case Maximum Channel Temperature (TCH) 123 C 21 W Pdiss, CW Median Lifetime (TM) 1.2E11 Hrs Thermal Resistance (θjc) 1.98 C/W 85 C Case Maximum Channel Temperature (TCH) 168 C 42 W Pdiss, CW Median Lifetime (TM) 8.5E8 Hrs Thermal Resistance (θjc) 2. C/W 85 C Case Maximum Channel Temperature (TCH) 224 C 63 W Pdiss, CW Median Lifetime (TM) 6.0E6 Hrs Thermal Resistance (θjc) 2.45 C/W 85 C Case Maximum Channel Temperature (TCH) 2 C 84 W Pdiss, CW Median Lifetime (TM) 5.6E4 Hrs Rev. B - 6 of 22- Disclaimer: Subject to change without notice

7 Maximum Gate Current Vs. Channel Temperature QPD8L Maximum Gate Current [ma] Maximum Gate Current Vs. Channel Temperature Channel Temperature [ C] Rev. B - 7 of 22- Disclaimer: Subject to change without notice

8 QPD8L 1, 2, 3 Load-Pull Smith Charts 1. V, 2 ma, Pulsed signal with 128 us pulse width and % duty cycle. Performance is at indicated input power. 2. See page 16 for load-pull and source-pull reference planes Ω load-pull TRL fixtures are built with 32-mil RO43G2 material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = iΩ Zl(2fo) = iΩ Zl(3fo) = NaNΩ Max Power is 52dBm at Z = iΩ Γ = i Max Gain is.7db at Z = iΩ Γ = i Max PAE is 75.5% at Z = iΩ Γ = i Power Zo = 11.7Ω 3dB Compression Referenced to Peak Gain Gain PAE Rev. B - 8 of 22- Disclaimer: Subject to change without notice

9 QPD8L 1, 2, 3 Load-Pull Smith Charts 1. V, 2 ma, Pulsed signal with 128 us pulse width and % duty cycle. Performance is at indicated input power. 2. See page 16 for load-pull and source-pull reference planes Ω load-pull TRL fixtures are built with 32-mil RO43G2 material. 3. NaN means the impedances are either undefined or varying in load-pull system. 2GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = iΩ Zl(2fo) = iΩ Zl(3fo) = NaNΩ Max Power is 52.1dBm at Z = iΩ Γ = i Max Gain is 16dB at Z = iΩ Γ = i Max PAE is 72.6% at Z = iΩ Γ = i Zo = 11.7Ω 3dB Compression Referenced to Peak Gain Power Gain PAE Rev. B - 9 of 22- Disclaimer: Subject to change without notice

10 QPD8L 1, 2, 3 Load-Pull Smith Charts 1. V, 2 ma, Pulsed signal with 128 us pulse width and % duty cycle. Performance is at indicated input power. 2. See page 16 for load-pull and source-pull reference planes Ω load-pull TRL fixtures are built with 32-mil RO43G2 material. 3. NaN means the impedances are either undefined or varying in load-pull system. 3GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = iΩ Zs(3fo) = iΩ Zl(2fo) = iΩ Zl(3fo) = NaNΩ Max Power is 51.9dBm at Z = iΩ Γ = i Max Gain is 12.5dB at Z = iΩ Γ = i Max PAE is 65.5% at Z = iΩ Γ = i Zo = 11.7Ω 3dB Compression Referenced to Peak Gain Power Gain PAE Rev. B - of 22- Disclaimer: Subject to change without notice

11 QPD8L Typical Performance Load-Pull Drive-up 1. Pulsed signal with 128 us pulse width and % duty cycle, Vd = V, IDQ = 2 ma 2. See page 16 for load-pull and source-pull reference planes where the performance was measured. Gain [db] QPD8 - Gain and PAE vs. Output Power 1 GHz - Power Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = iΩ Zl-3fo = NaNΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD8 - Gain and PAE vs. Output Power 1 GHz - Efficiency Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = iΩ Zl-3fo = NaNΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD8 - Gain and PAE vs. Output Power 2 GHz - Power Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = iΩ Zl-3fo = NaNΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] QPD8 - Gain and PAE vs. Output Power 2 GHz - Efficiency Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = iΩ Zl-3fo = NaNΩ Gain PAE Output Power [dbm] PAE [%] Rev. B - 11 of 22- Disclaimer: Subject to change without notice

12 QPD8L Typical Performance Load-Pull Drive-up 3. Pulsed signal with 128 us pulse width and % duty cycle, Vd = V, IDQ = 2 ma 4. See page 16 for load-pull and source-pull reference planes where the performance was measured. Gain [db] QPD8 - Gain and PAE vs. Output Power 3 GHz - Power Tuned Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = iΩ Zl-3fo = NaNΩ Gain PAE Output Power [dbm] PAE [%] Gain [db] Zs-fo = iΩ Zs-2fo = iΩ Zs-3fo = iΩ Zl-fo = iΩ Zl-2fo = iΩ Zl-3fo = NaNΩ QPD8 - Gain and PAE vs. Output Power 3 GHz - Efficiency Tuned Gain PAE Output Power [dbm] PAE [%] Rev. B - 12 of 22- Disclaimer: Subject to change without notice

13 QPD8L Power Driveup Performance Over Temperatures Of GHz EVB 1 1. Pulsed signal with 128 us pulse width and % duty cycle, Vd = V, IDQ = 2 ma P3dB [W] P3dB Over Temperatures C 1 25 C C Frequency [MHz] DEFF3dB [%] DEFF3dB Over Temperatures -40 C 25 C 85 C Frequency [MHz] G3dB [db] G3dB Over Temperatures C 25 C C Frequency [MHz] Pdiss3dB [W] Pdiss3dB Over Temperatures C C C Frequency [MHz] Rev. B - 13 of 22- Disclaimer: Subject to change without notice

14 Typical Performance GHz EVB at 25 C 1 1. Pulsed signal with 128 us pulse width and % duty cycle, Vd = V, I DQ = 2 ma QPD8L P3dB [W] P3dB At 25 C Frequency [MHz] DEFF3dB [%] DEFF3dB At 25 C Frequency [MHz] G3dB [db] G3dB At 25 C Frequency [MHz] Pdiss3dB [W] Pdiss3dB At 25 C Frequency [MHz] Rev. B - 14 of 22- Disclaimer: Subject to change without notice

15 QPD8L Typical 2-Tone Performance GHz EVB at 25 C 1 1. Center Frequency = GHz, Tone Spacing = MHz, I DQ = 2 ma and 5 ma Intermodulation Products, GHz EVB IM3 Lower 2 ma IM3 Upper 2 ma IM5 Lower 2mA IM5 Upper 2 ma IM3 Lower 5 ma IM5 Lower 5 ma IM3 Upper 5 ma IM5 Upper 5 ma IM Level [dbc] PEP [dbm] Rev. B - 15 of 22- Disclaimer: Subject to change without notice

16 QPD8L Pin Layout 1 LP Ref. Planes 1. The QPD8L will be marked with the QPD8L designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number, and the ZZZ is an auto-generated serial number. Pin Description Pin Symbol Description 1 VG / RF IN Gate voltage / RF Input 2 VD / RF OUT Drain voltage / RF Output 3 Flange Source to be connected to ground Rev. B - 16 of 22- Disclaimer: Subject to change without notice

17 QPD8L Mechanical Drawing 1. All dimensions are in inches. Angles are in degrees. Rev. B - 17 of 22- Disclaimer: Subject to change without notice

18 GHz Application Circuit - Schematic QPD8L TP4 C2 R6 C C32 C30 C31 C33 C8 R4 TP1 TP3 + C18 R5 R14 R R15 R3 C17 + C1 J1 C R16 C L1 R17 C24 C26 C29 C27 J2 R19 C21 R18 C22 C23 C25 C28 Q1 Bias-up Procedure Bias-down Procedure 1. Set V G to -4 V. 1. Turn off RF signal. 2. Set I D current limit to 300 ma. 2. Turn off V D 3. Apply V V D. 3. Wait 2 seconds to allow drain capacitor to discharge 4. Slowly adjust V G until I D is set to 2 ma. 4. Turn off V G 5. Set I D current limit to 0.6 A (Pulsed operation) 6. Apply RF. Rev. B - 18 of 22- Disclaimer: Subject to change without notice

19 GHz Application Circuit - Layout Board material is RO43G thickness with 1oz copper cladding. QPD8L Rev. B - 19 of 22- Disclaimer: Subject to change without notice

20 QPD8L GHz Application Circuit - Bill Of material Ref Des Value Description Manufacturer Part Number C8, 1 nf X7R V 5% 03 Capacitor AVX 031C2JAT2A C17-18 nf X7R V 5% 05 Capacitor AVX 051C4JAT2A C pf RF NPO 2VDC ± 0.1 pf Capacitor ATC ATC0A2R0BT2X C pf RF NPO 2VDC ± 0.1 pf Capacitor ATC ATC0A2R4BT2X C 3.0 pf RF NPO 2VDC ± 0.1 pf Capacitor ATC ATC0A3R0BT2X C21, pf RF NPO 2VDC ± 0.1 pf Capacitor ATC ATC0A6R2BT2X C22 13 pf RF NPO 2VDC 1% Capacitor ATC ATC0A130FT2X C19, 27, pf RF NPO 2VDC 1% Capacitor ATC ATC0A5FT2X C32-33 pf RF NPO 2VDC 1% Capacitor ATC ATC0A1FT2X C1 33 uf RF NPO 2VDC 1% Capacitor SANYO 63SXV33M C2 uf RF NPO 2VDC 1% Capacitor AVX TPSC6KR00 J1-2 SMA Panel Mount 4-hole Jack Gigalane PSF-S L1 5.6 nh 05 5% Inductor COILCRAFT 05CS-0XJE R4, 6 1 Ohm 03 Thick Film Resistor ANY R5 3.3 Ohm 03 Thick Film Resistor ANY R Ohm 03 Thick Film Resistor ANY R3 33 Ohm 03 Thick Film Resistor ANY R 3.9 Ohm 05 Thick Film Resistor ANY R Ohm 05CS High Power Thick Film Resistor IMS ND3-05CS4R00J R19 5 Ohm 16 Thick Film Resistor ANY Rev. B - of 22- Disclaimer: Subject to change without notice

21 Recommended Solder Temperature Profile QPD8L Rev. B - 21 of 22- Disclaimer: Subject to change without notice

22 QPD8L Product Compliance Information ESD Sensitivity Ratings Caution! ESD Sensitive Device Solderability Compatible with lead free soldering processes, 2 C maximum reflow temperature. Package lead plating: NiAu ESD Rating ESD Rating: Value: Test: Standard: MSL Rating MSL Rating: Test: Standard: TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 TBD 2 C convection reflow JEDEC Standard IPC/JEDEC J-STD-0 The use of no-clean solder to avoid washing after soldering is recommended. This part is compliant with EU 02/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@tqs.com Fax: For technical questions and application information: info-networks@tqs.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Rev. B - 22 of 22- Disclaimer: Subject to change without notice

QPD W, 50V, DC 3.7 GHz, GaN RF Transistor

QPD W, 50V, DC 3.7 GHz, GaN RF Transistor General Description The is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a V supply rail. The device is in an industry standard air cavity package and

More information

QPD1015L 65W, 50V, DC 3.7 GHz, GaN RF Transistor

QPD1015L 65W, 50V, DC 3.7 GHz, GaN RF Transistor QPD15L General Description The QPD15L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz with a V supply rail. The device is in an industry standard air cavity

More information

QPD W, 50V, DC 4 GHz, GaN RF Transistor

QPD W, 50V, DC 4 GHz, GaN RF Transistor General Description The Qorvo QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo s proven QGaN25HV process, which features advanced

More information

TGF2929-HM 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor

TGF2929-HM 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor General Description The Qorvo TGF2929-HM is a 0 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with Qorvo s proven QGaN25HV process, which features advanced

More information

QPD W, 32V, DC 12 GHz, GaN RF Transistor

QPD W, 32V, DC 12 GHz, GaN RF Transistor General Description The Qorvo is a W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic

More information

QPD W, 50V, DC 4 GHz, GaN RF Transistor

QPD W, 50V, DC 4 GHz, GaN RF Transistor General Description The Qorvo is a W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo s proven QGaN25HV process, which features advanced field plate

More information

QPD W, 50V, GHz, GaN RF IMFET

QPD W, 50V, GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an

More information

QPD W, 28V, GHz, GaN RF Input-Matched Transistor

QPD W, 28V, GHz, GaN RF Input-Matched Transistor Product Overview The Qorvo is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance,

More information

T1G FL 45W, 32V, DC 3.5 GHz, GaN RF Transistor

T1G FL 45W, 32V, DC 3.5 GHz, GaN RF Transistor General Description The Qorvo is a 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint s proven TQGaN25 process, which features advanced field

More information

QPD1019S2. 500W, 50V, GHz, GaN RF IMFET. Product Overview. Key Features. Functional Block Diagram. Applications.

QPD1019S2. 500W, 50V, GHz, GaN RF IMFET. Product Overview. Key Features. Functional Block Diagram. Applications. QPD19 Product Overview The QPD19 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.9 to 3.3 GHz on a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in

More information

TGF2929-FL 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor

TGF2929-FL 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor Product Overview The Qorvo is a 107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device features advanced field plate techniques to optimize power and efficiency at high drain

More information

QPD1025. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info

QPD1025. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info QPD1025 Product Overview The Qorvo QPD1025 is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-match within the package results in ease of external board match and

More information

QPD MHz, 50 V, 7 W GaN RF Input-Matched Transistor

QPD MHz, 50 V, 7 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD11 is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance,

More information

QPD GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD GHz, 50 V, 30 W GaN RF Input-Matched Transistor QPD Product Overview The Qorvo QPD is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain

More information

TGF2929-FS. Applications. Product Features. Functional Block Diagram. Pin Configuration. General Description

TGF2929-FS. Applications. Product Features. Functional Block Diagram. Pin Configuration. General Description Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency:

More information

QPD1025L. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info

QPD1025L. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info Product Overview The Qorvo is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input prematch within the package results in ease of external board match and saves board space.

More information

TGF2977-SM DC 12 GHz, 32 V, 5 W GaN RF Transistor

TGF2977-SM DC 12 GHz, 32 V, 5 W GaN RF Transistor Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to GHz and 32 V supply. The device is in an industry standard overmolded package and is ideally suited

More information

TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC 3.5 GHz, GaN RF Power Transistor

TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC 3.5 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency:

More information

T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor

T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power

More information

TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier

TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:

More information

QPD1025LS2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info

QPD1025LS2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering info QPD25L Product Overview The Qorvo QPD25L is a 00 W (P3dB) discrete GaN on SiC HEMT which operates from 0.96 to 1.2 GHz. Input prematch within the package results in ease of external board match and saves

More information

TGA2818-SM S-Band 30 W GaN Power Amplifier

TGA2818-SM S-Band 30 W GaN Power Amplifier S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal

More information

T2G Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor

T2G Q3 10W, 28V DC 6 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power

More information

TGF Watt Discrete Power GaN on SiC HEMT

TGF Watt Discrete Power GaN on SiC HEMT Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 1 GHz 3 dbm Nominal P3dB at 6 GHz 62.5% Maximum 1.4 db Linear at 6 GHz Bias: VD = - V,

More information

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS

More information

TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier

TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier Applications Radar Product Features Frequency Range: 3.1 3.6 GHz Pout: 5 dbm (at PIN = 27 dbm) Power Gain: 23 db (at PIN = 27 dbm) PAE: 51 % CW Bias: VD = pulsed (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG

More information

TGF Watt Discrete Power GaN on SiC HEMT

TGF Watt Discrete Power GaN on SiC HEMT Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - GHz 41.2 dbm Nominal PSAT at 6 GHz 63.4% Maximum at 6 GHz db Linear at 6 GHz Bias: VD

More information

TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier

TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated

More information

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier 2 to, W GaN Power Amplifier Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal

More information

TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output

More information

TGF Watt Discrete Power GaN on SiC HEMT

TGF Watt Discrete Power GaN on SiC HEMT Applications Marine radar Satellite communications Point to point communications Military communications Broadband amplifiers High efficiency amplifiers Product Features Functional Block Diagram Frequency

More information

TGA3503-SM 2-30 GHz GaAs Wideband Gain Block

TGA3503-SM 2-30 GHz GaAs Wideband Gain Block Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range: 2 3 GHz

More information

QPD W, 48 V, DC 4 GHz, GaN RF Power Transistor

QPD W, 48 V, DC 4 GHz, GaN RF Power Transistor QPD00 General Description The QPD00 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 4GHz on a +48 V supply rail. It is ideally suited for basestation, radar and communications

More information

QPA GHz 50 Watt GaN Amplifier

QPA GHz 50 Watt GaN Amplifier QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically

More information

QPA GHz 50 Watt GaN Amplifier

QPA GHz 50 Watt GaN Amplifier QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically

More information

TGA3504-SM 2-30 GHz GaAs Wideband Gain Block

TGA3504-SM 2-30 GHz GaAs Wideband Gain Block TGA54-SM Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Frequency Range:

More information

QPD0020S2. 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPD0020S2. 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information Product Overview The is a 35 W unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and

More information

TGM2635-CP X-Band 100 W GaN Power Amplifier

TGM2635-CP X-Band 100 W GaN Power Amplifier Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of

More information

TGA2625-CP GHz 20 W GaN Power Amplifier

TGA2625-CP GHz 20 W GaN Power Amplifier Product Description Qorvo s is a packaged high-power X-Band amplifier fabricated on Qorvo s QGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2625- CP achieves 42.5 dbm saturated output

More information

QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.

QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram. Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final

More information

TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier

TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)

More information

T1G Q3 DC 6 GHz 18 W GaN RF Power Transistor

T1G Q3 DC 6 GHz 18 W GaN RF Power Transistor Applications General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features Frequency: DC to 6 GHz

More information

QPD W, 48 V GHz GaN RF Power Transistor

QPD W, 48 V GHz GaN RF Power Transistor Applications W-CDMA / LTE Macrocell Base Station, Band 1 and Band 3 Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range:

More information

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -

More information

QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.

QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information. QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and

More information

QPA1003P 1 8 GHz 10 W GaN Power Amplifier

QPA1003P 1 8 GHz 10 W GaN Power Amplifier QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from

More information

QPA GHz GaAs Low Noise Amplifier

QPA GHz GaAs Low Noise Amplifier General Description Qorvo s QPA9 is a packaged, high-performance, low noise amplifier fabricated on Qorvo s production 9 nm phemt (QPHT9) process. Covering 7 GHz, the QPA9 provides db small signal gain

More information

TGA2622-CP 9 10 GHz 35 W GaN Power Amplifier

TGA2622-CP 9 10 GHz 35 W GaN Power Amplifier 9 1 GHz W GaN Power Amplifier Applications Weather and Marine Radar Product Features Frequency Range: 9 1 GHz PSAT:.5 dbm @ PIN = 18 dbm PAE: >% @ PIN = 18 dbm Power Gain: 27.5 db @ PIN = 18 dbm Bias:

More information

TGA2612-SM 6 12 GHz GaN LNA

TGA2612-SM 6 12 GHz GaN LNA Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm

More information

QPD0210TR7. 2x15 W, 48 V, GHz, Dual GaN RF Transistor. Product Overview. Applications. Functional Block Diagram. Ordering Information

QPD0210TR7. 2x15 W, 48 V, GHz, Dual GaN RF Transistor. Product Overview. Applications. Functional Block Diagram. Ordering Information Product Overview The is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor. can deliver PSAT of 16.6 W at +48

More information

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No.

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No. Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS

More information

TGM2635-CP X-Band 100 W GaN Power Amplifier

TGM2635-CP X-Band 100 W GaN Power Amplifier Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of

More information

TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier

TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db

More information

QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information .15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the

More information

QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information 0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8

More information

TGA FL 2.5 to 6 GHz 40W GaN Power Amplifier

TGA FL 2.5 to 6 GHz 40W GaN Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Functional Block Diagram Frequency Range: 2.5 to 6 GHz PSAT: 46.5 dbm @ PIN = 26dBm, CW PAE: 36% Small

More information

TGA2710-SM 8W GHz Power Amplifier

TGA2710-SM 8W GHz Power Amplifier Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9.5-11.5 GHz Saturated Output Power: 39 dbm Small

More information

QPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information

QPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.

More information

TGA2567-SM 2 20 GHz LNA Amplifier

TGA2567-SM 2 20 GHz LNA Amplifier Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with

More information

QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output

More information

TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM

More information

TGA4533-SM K-Band Power Amplifier

TGA4533-SM K-Band Power Amplifier Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL

More information

TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.

TGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information. TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM

More information

TGA2704-SM 8W 9-11 GHz Power Amplifier

TGA2704-SM 8W 9-11 GHz Power Amplifier Applications Marine and Air Radar, Traffic Control Weather Monitoring Port Security Point-to-Point Radio Communications Product Features Frequency Range: 9 - Saturated Output Power: 39 dbm Small Signal

More information

Applications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier

Applications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return

More information

TGM2543-SM 4-20 GHz Limiter/LNA

TGM2543-SM 4-20 GHz Limiter/LNA TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db

More information

TGL2226-SM GHz 6-Bit Attenuator

TGL2226-SM GHz 6-Bit Attenuator Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio General Purpose Product Features Functional Block Diagram Frequency Range:.1-15 GHz 6-Bit Digital

More information

TGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier

TGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier 17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and

More information

TGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information

TGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of

More information

TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added

More information

QPA GHz Variable Gain Driver Amplifier

QPA GHz Variable Gain Driver Amplifier QPA8 Product Description Qorvo's QPA8 is an S-band two stage variable gain driver amplifier in a 5x5 mm QFN. The QPA8 operates from 2.7 to 3.8 GHz and provides 31dBm of P1dB output power with 26 db of

More information

TGL2226-SM GHz 6-Bit Digital Attenuator

TGL2226-SM GHz 6-Bit Digital Attenuator Product Description Qorvo s TGL2226 SM is a wideband, 6 bit digital attenuator fabricated using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from.1 15 GHz, the TGL2226 SM offers a low

More information

TGP2105-SM 6-18 GHz 6-Bit Digital Phase Shifter (+Vc)

TGP2105-SM 6-18 GHz 6-Bit Digital Phase Shifter (+Vc) Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital Phase Shifter

More information

TGA2760-SM GHz Power Amplifier

TGA2760-SM GHz Power Amplifier Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1

More information

TGS SM GHz High Power SPDT Reflective Switch

TGS SM GHz High Power SPDT Reflective Switch - 18 GHz High Power SPDT Reflective Switch Product Overview Qorvo s is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN. Fabricated on Qorvo s QGaN25 0.25um

More information

TGL GHz Voltage Variable Attenuator

TGL GHz Voltage Variable Attenuator Applications Commercial and Military Radar Electronic Warfare Satellite Communications Point to Point Radio Instrumentation General Purpose Product Features Functional Block Diagram Frequency Range: 2

More information

QPA W, 28 V, GHz GaN PA Module

QPA W, 28 V, GHz GaN PA Module Product Description The QPA2705 is an integrated 2-stage Power Amplifier Module designed for Metro Cell Base Station applications with 5 W RMS at the device output. The module is 50 Ω input and output

More information

TGA4532 K-Band Power Amplifier

TGA4532 K-Band Power Amplifier Applications Point-to-Point Radio Communication Product Features Functional Block Diagram Frequency Range: 17.5 20 GHz Power: 32.5 dbm Psat, 31.5 dbm P1dB Gain: 23 db TOI: 43 dbm @ 22 dbm SCL Return Loss:

More information

TQP DC-6 GHz Gain Block

TQP DC-6 GHz Gain Block Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram

More information

TAT Ω 5V MHz RF Amplifier

TAT Ω 5V MHz RF Amplifier TAT74 Datasheet: Rev D 04-17-17-1 of 8 - Disclaimer: Subject to change without notice TAT74 Absolute Maximum Ratings Parameter Rating Storage Temperature - to 1 C Device Voltage (VDD) +10 V Operation of

More information

TGA FL 2.5 to 6GHz 40W GaN Power Amplifier

TGA FL 2.5 to 6GHz 40W GaN Power Amplifier 2.5 to 6GHz 4W GaN Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Frequency Range: 2.5 to 6 GHz P SAT : 46.5 dbm @ PIN = 26dBm, CW PAE:

More information

QPC GHz 6-Bit Digital Phase Shifter

QPC GHz 6-Bit Digital Phase Shifter Product Description The Qorvo is a packaged 6-bit digital phase shifter fabricated on Qorvo s high performance.15 um GaAs phemt process. It operates over 2.5-4 GHz while providing 36 of phase coverage

More information

QPA W, 28 V, GHz GaN PA Module

QPA W, 28 V, GHz GaN PA Module Product Description The QPA3503 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The

More information

TGV2561-SM GHz VCO with Divide by 2

TGV2561-SM GHz VCO with Divide by 2 GND RFout / 2 Vtune TGV2561-SM Applications Point to Point Radio / VSAT Millimeter-wave Communications Test Equipment 32-pin 5x5mm package Product Features Functional Block Diagram Frequency range: 8.9

More information

TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information

TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz

More information

QPA1019S GHz 10W GaN Power Amplifier

QPA1019S GHz 10W GaN Power Amplifier QPA119 4.5 7. GHz 1 W GaN Power Amplifier Product Overview Qorvo s QPA119 is a packaged high-power, C-band amplifier fabricated on Qorvo s production.15 um GaN on SiC process (QGaN15). Covering 4.5 7.

More information

TQP DC-6 GHz Gain Block

TQP DC-6 GHz Gain Block Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6

More information

TGP2107-SM 6 to 18 GHz 6-Bit Digital Phase Shifter ( V C )

TGP2107-SM 6 to 18 GHz 6-Bit Digital Phase Shifter ( V C ) TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital

More information

TGA3500-SM 2-12 GHz Driver Amplifier

TGA3500-SM 2-12 GHz Driver Amplifier Applications General Purpose QFN 8x8mm 28L Product Features Frequency Range: 2 12 GHz Power: 23 dbm P SAT Gain: 34 db Output TOI: 29 dbm Noise Figure: 3 db Bias: V D = 5 V, I D = 0 ma, V G1 = -0.7 V, V

More information

TGA FL 20W Ku-Band GaN Power Amplifier

TGA FL 20W Ku-Band GaN Power Amplifier TGA279-2-FL Applications Ku-band Communications Product Features Frequency Range: 14.0 1. GHz P SAT : 43 dbm PAE: 27% Small Signal Gain: db Integrated Voltage Detector Bias: V D = 2 V, I DQ = 1.0 A, V

More information

TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description

TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless Product Features 3-pin SOT-89 Package Functional Block Diagram 4-4 MHz +27.5 dbm P1dB +44 dbm Output IP3 GND 4 17.8

More information

QPA4501SR. 3 W, 28 V, GHz GaN PA Module. Product Overview. Key Features. Functional Block Diagram Applications. Ordering Information

QPA4501SR. 3 W, 28 V, GHz GaN PA Module. Product Overview. Key Features. Functional Block Diagram Applications. Ordering Information Product Overview The is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications up to 3 W RMS at the device output covering frequency range from 4.4 to 5.0 GHz. The module is

More information

QPD W, DC to 3.6 GHz 48 V GaN RF Power Transistor

QPD W, DC to 3.6 GHz 48 V GaN RF Power Transistor Product Description The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture

More information

TGA4906-SM 4 Watt Ka-Band Power Amplifier

TGA4906-SM 4 Watt Ka-Band Power Amplifier TGA496-SM Applications Ka-Band Sat-Com VSAT 496 12 M34 QFN x mm 32L Product Features Functional Block Diagram Frequency Range: 28 31 GHz Power: 36 dbm Psat Gain: db Bias: Vd = 6 V, Idq = 1.6 A, Vg = -.7

More information

TQP7M W High Linearity Amplifier. Applications. Ordering Information

TQP7M W High Linearity Amplifier. Applications. Ordering Information Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features 5-15 MHz +3 dbm P1dB at 94MHz +49 dbm Output IP3 at 94MHz

More information

TGL2201-SM T/R. Wideband Dual Stage VPIN Limiter. Applications. Ordering Information. Part No. ECCN Description

TGL2201-SM T/R. Wideband Dual Stage VPIN Limiter. Applications. Ordering Information. Part No. ECCN Description Applications LNA Receiver Chain Protection Military Radar Product Features 2-12 GHz Passive, High Isolation Limiter Low Loss < 1.0 db, X-band Return Loss > 10 db Flat Leakage < 18 dbm Input Power CW Survivability

More information

QPM GHz Multi-Chip T/R Module

QPM GHz Multi-Chip T/R Module QPM21 Product Description The QPM21 is a GaAs multi chip module (MCM) designed for S-Band radar applications within the 2.5-4. GHz range. The device consists of a T/R switch, a transmit path which is a

More information

TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description

TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 4-4 MHz +29.5 dbm P1dB +45 dbm

More information

QPF GHz GaN Front End Module

QPF GHz GaN Front End Module QPF46 37 4. GHz GaN Front End Module Product Description The QPF46 is a multi-function Gallium Nitride MMIC front-end module targeted for 39 GHz phased array G base stations and terminals. The device combines

More information

TQP3M9008 High Linearity LNA Gain Block

TQP3M9008 High Linearity LNA Gain Block Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output

More information