DC - 20 GHz Discrete power phemt
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- Bernadette Lindsey
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1 DC - 20 GHz Discrete power phemt Product Description The TriQuint is a discrete 0.6 mm phemt which operates from DC-20 GHz. The is designed using TriQuint s proven standard 0.3um power phemt production process. The typically provides > 28 dbm of saturated output power with power gain of db. The maximum power added efficiency is 8% which makes the appropriate for high efficiency applications. Key Features and Performance Frequency Range: DC - 20 GHz > 28 dbm Nominal Psat 8% Maximum PAE 36 dbm Nominal OIP3 db Nominal Power Gain Suitable for high reliability applications 0.6mm x 0.3μm Power phemt Nominal Bias Vd = 8-V, Idq = 4-7mA (Under RF Drive, Id rises from 4mA to 1mA) Chip Dimensions: 0.7 x 0.3 x 0. mm (0.0 x x in) Primary Applications Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications 3 The is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Maximum Gain (db) 2 MSG 20 MAG Frequency (GHz) 1
2 TABLE I MAXIMUM RATINGS Symbol Parameter 1/ Value Notes V + Positive Supply Voltage. V 2/ V - Negative Supply Voltage Range -V to 0V I + Positive Supply Current 282 ma 2/ I G Gate Supply Current 7 ma P IN Input Continuous Wave Power 23 dbm 2/ P D Power Dissipation See note 3 2/ 3/ T CH Operating Channel Temperature 1 C 4/ T M Mounting Temperature ( Seconds) 320 C T STG Storage Temperature -6 to 1 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P D (max) = (1 C TBASE C) / 8.0 ( C/W) 4/ Junction operating temperature will directly affect the device median time to failure (T M ). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (T A = 2 C, Nominal) Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current ma Gm Transconductance - - ms V P Pinch-off Voltage V V BGS V BGD Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain V V Note: For TriQuint s 0.3um power phemt devices, RF breakdown >> DC breakdown 2
3 TABLE III RF CHARACTERIZATION TABLE 1/ (T A = 2 C, Nominal) SYMBOL PARAMETER f = GHz f = GHz UNITS Power Tuned: Vd = V Idq = 4 ma Vd = V Idq = 4 ma Vd = V Idq = 4 ma Vd = V Idq = 4 ma Psat Saturated Output Power dbm PAE Power Added Efficiency % Gain Power Gain db Γ L 2/ Efficiency Tuned: Load Reflection coefficient Psat Saturated Output Power dbm PAE Power Added Efficiency % Gain Power Gain db Γ L 2/ Load Reflection coefficient OIP3 Output TOI dbm 1/ Large signal equivalent phemt output network 2/ Optimum load impedance for maximum power or maximum PAE at and GHz. The series resistance and inductance (Rd and Ld) shown in the Figure on page 7 is excluded 3
4 TABLE IV THERMAL INFORMATION Parameter Test Conditions T CH ( o C) θ JC ( C/W) T M (HRS) θ JC Thermal Resistance Vd = V (channel to backside of carrier) Idq = 4 ma Pdiss = 0.4 W E+6 Note: Assumes eutectic attach using 1. mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70 C baseplate temperature. Measured Fixtured Data IMD3 vs. output power/tone at & GHz GHz, Vd=V, Id=4mA GHz, Vd=V, Id=4mA GHz, Vd=V,Id=4mA GHz, Vd=V, Id=4mA IMD3 (dbc) Output power/tone (dbm) 4
5 Measured Fixtured Data Power tuned data at GHz Pout (dbm) Vd = V, Id = 4mA Id (ma) Gain (db) Vd = V, Id = 4mA PAE (%) For power tuned devices at GHz Input matched for maximum gain & output load is: Vd=V, Idq=4mA: Rp = 7.0 Ω, Cp = 0.27pF, Γ = 0.400, θ = 4.7 Vd=V, Idq=7mA: Rp = 44.6 Ω, Cp = 0.276pF, Γ = 0.382, θ = 0.1 Efficiency tuned data at GHz Pout (dbm) Vd = V, Id = 4mA Id (ma) Gain (db) Vd = V, Id = 4mA PAE (%) For efficiency tuned devices at GHz: Input matched for maximum gain & output load is: Vd=V, Idq=4mA: Rp = 74.2 Ω, Cp = 0.2pF, Γ = 0.466, θ = 93.4 Vd=V, Idq=4mA: Rp = 72. Ω, Cp = 0.22pF, Γ = 0.4, θ = 93.7
6 Measured Fixtured Data Power tuned data at GHz Pout (dbm) Vd = V, Id = 4mA Id (ma) Gain (db) Vd = V, Id = 4mA PAE (%) For power tuned devices at GHz Input matched for maximum gain & output load is: Vd=V, Idq=4mA: Rp = 48.4 Ω, Cp = 0.432pF, Γ = 0. 6, θ =.1 Vd=V, Idq=7mA: Rp = 43. Ω, Cp = 0.41pF, Γ = 0., θ = 7.7 Efficiency tuned data at GHz Pout (dbm) Vd = V, Id = 4mA Id (ma) Gain (db) Vd = V, Id = 4mA PAE (%) For efficiency tuned devices at GHz: Input matched for maximum gain & output load is: Vd=V, Idq=4mA: Rp = 67.0 Ω, Cp = 0.3pF, Γ = 0.680, θ = 3.0 Vd=V, Idq=4mA: Rp = 1.3 Ω, Cp = 0.49pF, Γ = 0.619, θ = 7.3 6
7 Linear Model for 0.6 mm Unit phemt cell OUT L Rdg Gate Lg Rg Rgs Cgs + Vi Ri - Cdg gmvi Rds Cds Rd Ld Drain Unit phemt cell Reference Plane L s Source R s Source Gate Source Source UPC Drain L - via = 0.0 nh (2x) UPC = 0.6mm Unit phemt Cell MODEL PARAMETER Vd = 8V Idq = 4mA Vd = 8V Idq = 60mA Vd = 8V Idq = 7mA Vd = V Idq = 4mA Vd = V Idq = 60mA Vd = V Idq = 4mA UNITS Rg Ω Rs Ω Rd Ω gm S Cgs pf Ri Ω Cds pf Rds Ω Cgd pf Tau ps Ls nh Lg Ld nh nh Rgs Ω Rgd Ω 7
8 Unmatched S-parameters for 0.6 mm phemt Bias Conditions: Vd = V, Idq = 4mA Frequency s11 s11 ang s21 s21 ang s s ang s s ang (GHz) db deg db deg db deg db deg
9 NE Mechanical Drawing 0. [0.021] 0.4 [0.0] [0.0] [0.000] [0.000] [0.00] 0.44 [0.0] 0.6 [0.0] Units: millimeters (inches) Thickness: 0.0 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/ (0.002) GND IS BACKSIDE OF MMIC Bond pad #1 (Vg) x (0.004 x 0.004) Bond pad #2 (Vd) x (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. 9
10 Assembly Process Notes Reflow process assembly notes: Use AuSn (80/20) solder with limited exposure to temperatures at or above 0 C for sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with inch wire. Maximum stage temperature is 200 C.
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14-17 GHz Packaged Doubler with Amplifier Key Features RF Output Frequency Range: 28-34 GHz Input Frequency Range: 14-17 GHz Output Power: 20 dbm Nominal Conversion Gain: 15 db Nominal Input Frequency
More informationHMC906A. Amplifiers - Linear & Power - CHIP. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram
Typical Applications Features The HMC96A is ideal for: Satellite Communications Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Saturated Output Power: +33.5
More informationData Sheet AMMC KHz 80 GHz TWA. Description. Features. Typical Performance (Vd=5V, Idsq=0.1A) Component Image.
AMMC-525 3KHz 8 GHz TWA Data Sheet Description The AMMC-525 MMIC is a 3KHz to 8GHz ultra broadband traveling wave amplifier. In this operational frequency band, AMMC-525 provides 8dB gain with better than
More informationGHz GaAs MMIC Power Amplifier
17.0.0 GHz GaAs MMIC August 07 Rev 08Aug07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement.0 Small Signal Gain +.0 m Saturated Output Power 0% OnWafer RF, DC and
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Linear gain, Return Losses (db) WWG A3667A A3688A UMS 67A 88A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates
More information2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402
2 GHz to 3 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC842 FEATURES Output power for 1 db compression (P1dB): 21. dbm typical Saturated output power (PSAT): 22 dbm typical Gain: 13. db typical Noise
More informationMAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information
Features 15 W Power Amplifier 42 dbm Saturated Pulsed Output Power 17 db Large Signal Gain P SAT >40% Power Added Efficiency Dual Sided Bias Architecture On Chip Bias Circuit 100% On-Wafer DC, RF and Output
More informationNPA100-D GHz GaN 20W Power Amplifier. Product Description: Key Features:
Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.
More informationData Sheet. AMMC GHz 1W Power Amplifier. Features. Description. Applications
AMMC-648 6-18 GHz 1W Power Amplifier Data Sheet Chip Size: 2 x 2 µm (78.5 x 78.5 mils) Chip Size Tolerance: ± 1 µm (±.4 mils) Chip Thickness: 1 ± 1 µm (4 ±.4 mils) Pad Dimensions: 1 x 1 µm (4 ±.4 mils)
More informationFeatures. = +25 C, Vdd = +6V, Idd = 375mA [1]
v.119 HMC86 POWER AMPLIFIER, 24 -.5 GHz Typical Applications The HMC86 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Saturated Output
More informationFeatures. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]
v2.211 HMC949 Typical Applications The HMC949 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Features Saturated Output Power: +5.5 dbm
More informationFeatures. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]
HMC129 v1.412 Typical Applications The HMC129 is ideal for: Features Saturated Output Power: + dbm @ 25% PAE Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional
More informationFeatures. = +25 C, Vdd = 5V, Idd = 85mA*
Typical Applications The is ideal for use as a medium power amplifier for: Point-to-Point and Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 25% PAE Gain: 15 db
More informationFeatures OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma
v.1111 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram P1dB Output Power: + dbm Psat Output Power: +
More informationFeatures. = +25 C, Vdd = 5V, Idd = 200 ma*
v3.13 HMC9 Typical Applications The HMC9 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Noise
More informationGaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
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More information81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector HMC8142
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More informationFeatures. Noise Figure db Supply Current (Idd) ma Supply Voltage (Vdd) V
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Main Features Product Description MECGaNLNACX is a 0.25µm GaN HEMT Low Noise Amplifier designed and tested by MEC for C- to X-Band applications. In the frequency range from 5 GHz to 12 GHz MECGaNLNACX
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DRIVER AMPLIFIER, DC - 3 GHz Typical Applications This is ideal for: 0 Gb/s Lithium Niobate/ Mach Zender Fiber Optic Modulators Broadband Gain Block for Test & Measurement Equipment Broadband Gain Block
More informationTGL4203-SM. DC - 30 GHz Wideband Analog Attenuator. Key Features. Measured Performance
DC - 30 GHz Wideband Analog Attenuator Key Features Frequency Range: DC to 30 GHz 17 db Variable Attenuation Range Insertion Loss: 1.5 db Typical Input P1dB: >20 dbm Typical @ 10 db Attenuation IM3: -40
More informationFeatures. = +25 C, Vdd = +10V, Idd = 350mA
Typical Applications The is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: +28 dbm High : 14 db High Output IP3: +41 dbm Single Supply: +V @ 3 ma Ohm
More informationFeatures. = +25 C, Vdd 1, 2, 3 = +3V
v3.917 Typical Applications Features The HMC17 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
More informationFeatures. = +25 C, Vdd1, Vdd2 = +5V
v.11 HMC51 POWER AMPLIFIER, 5-2 GHz Typical Applications Features The HMC51 is ideal for use as a driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors
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37.042.0 GHz GaAs MMIC February 2007 Rev 01Feb07 P1018BD Features Excellent Transmit Output Stage Output Power Adjust 26.0 Small Signal Gain +25.0 m P1 Compression Point 100% OnWafer RF, DC and Output
More informationFeatures. = +25 C, Vdd 1, 2, 3 = +3V
Typical Applications Functional Diagram v2.29 The HMC6 is ideal for use as a LNA or driver amplifi er for : Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military
More information20 40 GHz Amplifier. Technical Data HMMC-5040
2 4 GHz Amplifier Technical Data HMMC-4 Features Large Bandwidth: 2-44 GHz Typical - 4 GHz Specified High : db Typical Saturated Output Power: dbm Typical Supply Bias: 4. volts @ 3 ma Description The HMMC-4
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