1W High Linearity and High Efficiency GaAs Power FETs
|
|
|
- Egbert Hancock
- 5 years ago
- Views:
Transcription
1 1W High Linearity and High Efficiency GaAs Power FETs FEATURES! 1W Typical Power at 6 GHz PHOTO ENLARGEMENT! Linear Power Gain: G L = 13 db Typical at 6 GHz! High Linearity: IP3 = 4 dbm Typical at 6 GHz! High Power Added Efficiency: Nominal PAE of 43% at 6 GHz! Via Hole Source Ground! Suitable for High Reliability Application! Breakdown Voltage: BV DGO 15 V! Lg =.35 µm, Wg = 2.4 mm! Tight Vp ranges control! High RF input power handling capability! 1 % DC Tested DESCRIPTION The TC151 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 2GHz. All devices are 1% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include commercial and military high performance power amplifiers. ELECTRICAL SPECIFICATIONS (T A =25 C) Symbol Conditions MIN TYP MAX UNIT P 1dB Output Power at 1dB Gain Compression Point, f = 6 GHz V DS = 8 V, I DS = 24 ma dbm G L Linear Power Gain, f = 6 GHz V DS = 8 V, I DS = 24 ma db IP3 Intercept Point of the 3 rd -order Intermodulation, f = 6 GHz V DS = 8 V, I DS = 24 ma,*p SCL = 17 dbm 4 dbm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 43 % I DSS Saturated Drain-Source Current at V DS = 2 V, V GS = V 6 ma g m Transconductance at V DS = 2 V, V GS = V 4 ms V P Pinch-off Voltage at V DS = 2 V, I D = 4.8 ma -1.7** Volts BV DGO Drain-Gate Breakdown Voltage at I DGO =1.2 ma Volts R th Thermal Resistance 12 C/W Note: * P SCL : Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage. TC151 s are divided into 3 groups: (1) TC151P1519 : Vp = -1.5V to -1.9V (2) TC151P162 : Vp = -1.6V to -2.V (3)TC151P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. 1 / 5
2 ABSOLUTE MAXIMUM RATINGS (T A =25 C) Symbol Parameter Rating V DS Drain-Source Voltage 12 V V GS Gate-Source Voltage -5 V I DS Drain Current I DSS P in RF Input Power, CW 28 dbm P T Continuous Dissipation 3.8 W T CH Channel Temperature 175 C T STG Storage Temperature - 65 C to +175 C CHIP DIMENSIONS 6± 12 D G D G 47± 12 Units: Micrometers Chip Thickness: 5 Gate Pad: 79 x 59.5 Drain Pad: 86. x 76. CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (8%Au-2%Sn) perform at stage temperature: 29 C ± 5 C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with.7 to 1. mil (.18 to.25 mm) gold wire. Stage temperature: 22 C to 25 C; Bond Tip Temperature: 15 C; Bond Force: 2 to 3 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 3V. 2 / 5
3 TYPICAL SCATTERING PARAMETERS (T A =25 C) V DS = 8 V, I DS = 24 ma S GHz 1.1. Mag Max GHz GHz Per Div S GHz Mag Max GHz S GHz Per Div S GHz GHz 3 / 5
4 FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG * The data does not include gate, drain and source bond wires. 4 / 5
5 SMALL SIGNAL MODEL, V DS = 8 V, I DS = 24 ma SCHEMATI PARAMETERS Lg Rg Cgd Rd Ld Lg.39 nh Rs.394 Ohm Cgs Ri T Gm Cds Rds Rg.45 Ohm Ls.1 nh Cgs pf Cds.536 pf Ri.91 Ohm Rds 63.7 Ohm Cgd.181 pf Rd.63 Ohm Rs Gm 44.3 ms Ld.8 nh T 3.9 psec Ls LARGE SIGNAL MODEL, V DS = 8 V, I DS = 24 ma SCHEMATI TOM2 MODEL PARAMETERS Lg Rg Cgs Ris Cgd Rid Id Rs Cds Rdb Cbs Rd Ld VTO V VMAX.5 V ALPHA 2.81 CGD.185 pf BETA.549 CGS 7.22 pf GAMMA.173 CDS.5364 pf DELTA.818 RIS.98 Ohm Q.96 RID.1 Ohm NG.1 VBR 15 V ND.1 RDB Ohm TAU 3.9 ps CBS pf RG.454 Ohm TNOM 25 C RD.63 Ohm LS.11 nh RS.394 Ohm LG.391 nh IS 1E-11 ma LD.8 nh N 1 AFAC 1 VBI 1 V NFING 1 VDELTA V Ls 5 / 5
Low Noise and Medium Power GaAs FETs
C131 REV5_22 Low Noise and Medium Power GaAs FEs FEAURES! Low Noise Figure: NF = db ypical at 1 PHOO ENLARGEMEN! High Associated Gain: Ga = 1 db ypical at 1! High Dynamic Range: 1 db Compression Power
LOW NOISE L TO K-BAND GaAs MESFET SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT 1
FEATURES LOW NOISE FIGURE NF = 1.6 db TYP at f = 1 GHz HIGH ASSOCIATED GAIN GA = 9.5 db TYP at f = 1 GHz LG = 0.3 µm, WG = 80 µm EPITAXIAL TECHNOLOGY LOW PHASE NOISE DESCRIPTION The features a low noise
TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz. P1dB Output p1db (Vds = 2V, Id = 10mA) 12 GHz dbm
SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm) The BeRex BCL016B is a GaAs super low noise phemt with a nominal 0.15 micron gate length and 160 micron gate width making the product ideally suited for applications
EC2612 RoHS COMPLIANT
40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor EC2612 RoHS COMPLIANT Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm
DC - 20 GHz Discrete power phemt
DC - 20 GHz Discrete power phemt Product Description The TriQuint is a discrete 0.6 mm phemt which operates from DC-20 GHz. The is designed using TriQuint s proven standard 0.3um power phemt production
NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET PACKAGE OUTLINE
FEATURES NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel USABLE TO.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-, PCS HIGH OUTPUT POWER:
2-18 GHz Low Noise Amplifier TGA8344-SCC
April 3, 2003 2-18 GHz Low Noise Amplifier Key Features and Performance 2 to 18 GHz Frequency Range Typical 4 db Noise Figure at Midband 16 dbm Typical Output Power at 1 db Gain Compression 19 db Typical
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET PACKAGE OUTLINE
FEATURES SUPER LOW NOISE FIGURE:.35 db Typ at f = 1 HIGH ASSOCIATED GAIN: 13. db Typ at f = 1 GATE LENGTH:. µm GATE WIDTH: 16 µm DESCRIPTION NEC's NE31 is a Hetero-Junction FET chip that utilizes the junction
GaN/SiC Bare Die Power HEMT DC-15 GHz
GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of mm (Eight 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
GaN/SiC Bare Die Power HEMT DC-15 GHz
GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
AMMC KHz 40 GHz Traveling Wave Amplifier
AMMC- 3 KHz GHz Traveling Wave Amplifier Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 3 x µm (9. x 1.3 mils) ± µm (±. mils) ± µm ( ±. mils) 8 x 8 µm (.9 ±. mils) Description
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Measured Performance. Primary Applications Space Military Broadband Wireless
12 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz > 41 dbm Nominal Psat 55% Maximum PAE 15 db Nominal Power Gain Bias: Vd = 28-40 V, Idq = 250 ma, Vg = -3 V Typical Technology:
8 11 GHz 1 Watt Power Amplifier
Rev. 1.1 December 2 GHz 1 Watt Power Amplifier Features Frequency Range : GHz 3 dbm output P1dB. db Power gain 3% PAE High IP3 Input Return Loss > db Output Return Loss > db Dual bias operation No external
20 40 GHz Amplifier. Technical Data HMMC-5040
2 4 GHz Amplifier Technical Data HMMC-4 Features Large Bandwidth: 2-44 GHz Typical - 4 GHz Specified High : db Typical Saturated Output Power: dbm Typical Supply Bias: 4. volts @ 3 ma Description The HMMC-4
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Measured Performance. Primary Applications Space Military Broadband Wireless
6 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz > 38 dbm Nominal Psat 55% Maximum PAE 15 db Nominal Power Gain Bias: Vd = 28-40 V, Idq = 125 ma, Vg = -3 V Typical Technology:
NEC's C TO X BAND N-CHANNEL GaAs MES FET PACKAGE OUTLINE
FEATURES HIGH POWER GAIN: GS = 6 db TYP at f = 1 GHz OUTPUT POWER (at 1 db compression): 15 db TYP at f = 1 GHz LOW NOISE/HIGH GAIN: NF =.9 db TYP, Ga = 1 db TYP at f = 4 GHz GATE LENGTH: LG =.8 µm (recessed
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Primary Applications Defense & Aerospace Broadband Wireless. Product Description
50 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz 47 dbm Nominal Psat 55% Maximum PAE 8.7 db Nominal Power Gain Bias: Vd = 28-35 V, Idq = 1 A, Vg = -3.6 V Typical Technology:
NEC's SUPER LOW NOISE HJ FET
NEC's SUPER LOW NOISE HJ FET NE31S1 FEATURES SUPER LOW NOISE FIGURE:.35 db TYP at f = 1 GHz HIGH ASSOCIATED GAIN: 13.5 db TYP at f = 1 GHz GATE LENGTH: LG. µm GATE WIDTH: WG = 16 µm OUTLINE DIMENSION (Units
6-18 GHz High Power Amplifier TGA9092-SCC
6-18 GHz High Power Amplifier Key Features and Performance Dual Channel Power Amplifier 0.25um phemt Technology 6-18 GHz Frequency Range 2.8 W/Channel Midband Pout 5.6 W Pout Combined 24 db Nominal Gain
Product Data Sheet August 5, 2008
TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier Key Features 0.25 um phemt Technology 17 db Nominal Gain 31 dbm Pout @ P1dB, Psat 33dBm @ 6V, 34dBm @7V Bias 6-7V @
5 6 GHz 10 Watt Power Amplifier
5 6 GHz 10 Watt Power Amplifier Features Frequency Range : 5 6GHz 40 dbm Output Power 18 db Power gain 30% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 7.5 db Dual bias operation No external
8-18 GHz Wideband Low Noise Amplifier
8-18 GHz Wideband Low Noise Amplifier Features Frequency Range : 8.0 18.0GHz 23dB Nominal gain Low Midband Noise Figure < 2 db Input Return Loss > 12 db Output Return Loss > 12 db Single +3V Operation
11-15 GHz 0.5 Watt Power Amplifier
11-15 GHz 0.5 Watt Power Amplifier Features Frequency Range : 11-15GHz 27.5 dbm output Psat 13 db Power gain 25% PAE High IP3 Input Return Loss > 11 db Output Return Loss > 6 db Dual bias operation No
Ceramic Packaged GaAs Power phemt DC-12 GHz
Ceramic Packaged GaAs Power phemt DC-12 GHz DESCRIPTION AMCOM s is a discrete GaAs phemt that has a total gate width of 1.mm. It is in a ceramic BH package for operating up to 12 GHz. The BH package has
CMD217. Let Performance Drive GHz GaN Power Amplifier
Let Performance Drive Features High Power High linearity Excellent efficiency Small die size Applications Ka-band communications Commercial satellite Military and space Description Functional Block Diagram
Features. = +25 C, Vdd = +6V, Idd = 375mA [1]
![Features. = +25 C, Vdd = +6V, Idd = 375mA [1]](/thumbs/86/94452749.jpg "Features. = +25 C, Vdd = +6V, Idd = 375mA [1]")
v.119 HMC86 POWER AMPLIFIER, 24 -.5 GHz Typical Applications The HMC86 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Saturated Output
Data Sheet. AMMC GHz Amplifier. Description. Features. Applications
AMMC - 518-2 GHz Amplifier Data Sheet Chip Size: 92 x 92 µm (.2 x.2 mils) Chip Size Tolerance: ± 1µm (±.4 mils) Chip Thickness: 1 ± 1µm (4 ±.4 mils) Pad Dimensions: 8 x 8 µm (.1 x.1 mils or larger) Description
= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W
CMPA006005D 5 W, 0 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA006005D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
HMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features
Typical Applications Features This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Output IP: + dbm P1dB: +24 dbm Gain: 17 db Supply Voltage: +5V
Features. = +25 C, Vdd = 5V, Idd = 85mA*
Typical Applications The is ideal for use as a medium power amplifier for: Point-to-Point and Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 25% PAE Gain: 15 db
Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma
![Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma](/thumbs/89/98911879.jpg "Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma")
v.1111 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram P1dB Output Power: + dbm Psat Output Power: +
5 6.4 GHz 2 Watt Power Amplifier
5 6.4 GHz 2 Watt Power Amplifier Features Frequency Range : 5 6.4GHz 32.5 dbm output P1dB 9 db Power gain 32% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 12 db Dual bias operation No external
Features. = +25 C, Vdd = 5V, Idd = 200 ma*
v3.13 HMC9 Typical Applications The HMC9 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Noise
Features dbm
v9.917 HMC441 Typical Applications Features The HMC441 is ideal for: Point-to-Point and Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram Gain:.5 db Saturated
MAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information
Features 15 W Power Amplifier 42 dbm Saturated Pulsed Output Power 17 db Large Signal Gain P SAT >40% Power Added Efficiency Dual Sided Bias Architecture On Chip Bias Circuit 100% On-Wafer DC, RF and Output
CGHV1J070D. 70 W, 18.0 GHz, GaN HEMT Die
Rev 1.0 May 2017 CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25
CGHV1J025D. 25 W, 18.0 GHz, GaN HEMT Die
Rev 2.0 May 2017 CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25
Ceramic Packaged GaAs Power phemt DC-10 GHz
Ceramic Packaged GaAs Power phemt DC- GHz DESCRIPTION AMCOM s is part of the BI series of GaAs phemts. This part has a total gate width of 6mm. The is designed for high power microwave applications, operating
Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]
![Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]](/thumbs/92/108090400.jpg "Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]")
v2.211 HMC949 Typical Applications The HMC949 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram Features Saturated Output Power: +5.5 dbm
Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]
![Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]](/thumbs/82/85923909.jpg "Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]")
HMC129 v1.412 Typical Applications The HMC129 is ideal for: Features Saturated Output Power: + dbm @ 25% PAE Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional
GHz Low Noise Amplifier
8.0-12.0 GHz Low Noise Amplifier Features Frequency Range : 8.0-12.0 GHz Low Noise Figure < 1.7 db 26 db nominal gain 12 dbm P 1dB High IP3 Input Return Loss > 10 db Output Return Loss > 10 db DC decoupled
CMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra low noise performance High linearity Small die size 2 GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD63 is a high dynamic range GaAs MMIC low noise amplifier ideally
PARAMETER/TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNIT
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 1200 micron gate width make the product ideally suited
27-31 GHz 2W Balanced Power Amplifier TGA4513
27-31 GHz 2W Balanced Power Amplifier Key Features 27-31 GHz Bandwidth > 32 dbm P1dB 33 dbm Psat 2 db Nominal Gain IMR3 is 37 dbc @ 18 dbm SCL 14 db Nominal Return Loss Bias: 6 V, 84 ma.25 um 3MI MMW phemt
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE34 FEATURES VERY LOW NOISE FIGURE: NF =.6 db typical at f = GHz HIGH ASSOCIATED GAIN: GA =. db typical at f = GHz LG =.5 µm, WG = µm DESCRIPTION The NE34 is a pseudomorphic
HMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A.
v9.114 DRIVER AMPLIFIER, DC - 2 GHz Typical Applications The wideband driver is ideal for: OC192 LN/MZ Modulator Driver Telecom Infrastructure Test Instrumentation Military & Space Functional Diagram Features
HMC906A. Amplifiers - Linear & Power - CHIP. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram
Typical Applications Features The HMC96A is ideal for: Satellite Communications Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Saturated Output Power: +33.5
Features. = +25 C, Vdd 1, 2, 3 = +3V
Typical Applications Functional Diagram v2.29 The HMC6 is ideal for use as a LNA or driver amplifi er for : Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military
9-10 GHz LOW NOISE AMPLIFIER
9-10 GHz LOW NOISE AMPLIFIER Features Frequency Range 9-10GHz Low Noise Figure < 1.38 db High Gain 28 ± 0.4dB Input Return Loss > 10dB. Output Return Loss > 13dB. 10 dbm is Nominal P1dB 20 dbm OIP3 No
Advance Datasheet Revision: October Applications
APN149 Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers Product Description X = 4.4mm Y = 2.28mm Product Features
Features. = +25 C, Vdd 1, 2, 3 = +3V
Typical Applications Functional Diagram v.97 The HMC is ideal for use as a LNA or driver amplifi er for : Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military &
NEC's 1 W, L&S-BAND Medium POWER GaAs HJ-FET. Gate 0.6 ± ± 0.2. ηadd Power Added Efficiency % PACKAGE OUTLINE 79A
NEC's 1 W, L&S-BAND Medium POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS (Units in mm) LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel USABLE TO 3.7 GHz: Fixed Wireless Access,
12-18 GHz Ku-Band 3-Stage Driver Amplifier TGA2507
12- GHz Ku-Band 3-Stage Driver Amplifier Key Features 12- GHz Bandwidth 28 db Nominal Gain dbm P1dB Bias: 5,6,7 V, 80 ± 10% ma Self Bias 0.5 um 3MI mmw phemt Technology Chip Dimensions: 1.80 x 0.83 x 0.1
it to 18 GHz, 2-W Amplifier
it218 to 18 GHz, 2-W Amplifier Description Features Absolute Maximum Ratings Electrical Characteristics (at 2 C) -ohm system V DD = 8 V Quiescent current (I DQ = 1.1 A The it218 is a three-stage, high-power
ENGDA Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA Features. Typical Applications. Description. Functional Block Diagram
Typical Applications ENGDA00072 Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA00072 Features Military EW and SIGINT Receiver or Transmitter Telecom Infrastructure Space Hybrids Test and Measurement
CMD GHz Low Noise Amplifier
Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: +3. V @ 5 ma Small die size Vdd Description The CMD7 is a broadband MMIC low noise amplifier
= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA6D Watt, MHz - 6 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA6D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
Features. = +25 C, Vdd 1, 2, 3, 4 = +3V
Typical Applications Functional Diagram v.3 The HMC5 is ideal for use as a LNA or driver amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space
Features. = +25 C, Vdd1, Vdd2 = +5V
v.11 HMC51 POWER AMPLIFIER, 5-2 GHz Typical Applications Features The HMC51 is ideal for use as a driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors
20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS
Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
Features. Gain: 15.5 db. = +25 C, Vdd = 5V
Typical Applications v2.97 Features AMPLIFIER, 3.5-7. GHz The HMC392 is ideal for: Gain: 5.5 db Point-to-Point Radios VSAT LO Driver for HMC Mixers Military EW, ECM, C 3 I Space Functional Diagram Noise
2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The CMD29 is wideband GaAs
Advance Datasheet Revision: May 2013
Applications Military SatCom Phased-Array Radar Applications Point-to-Point Radio Point-to-Multipoint Communications Terminal Amplifiers X = 4.4mm Y = 2.28mm Product Features RF frequency: 18 to 23 GHz
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier December 2012 Rev0 DESCRIPTION AMCOM s AM357039WM is a broadband GaAs MMIC Power Amplifier. It has a nominal CW performance of 21dB small signal gain, and 38.5dBm (7W) saturated
Features. = +25 C, Vdd 1, 2, 3 = +3V
v3.917 Typical Applications Features The HMC17 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
Features. = +25 C, Vdd = +5V, Idd = 63 ma
v2.213 LOW NOISE AMPLIFIER, 2-2 GHz Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure Fiber Optics Functional Diagram Noise
PRELIMINARY = 25 C) Parameter GHz 14.0 GHz 14.5 GHz Units Small Signal Gain db P SAT. = 26 dbm W P 3dB
CMPADE030D PRELIMINARY 30 W, 3.75-4.5 GHz, 40 V, GaN MMIC, Power Amplifier Cree s CMPADE030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit
HMC-AUH232 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP. GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz. Typical Applications.
DRIVER AMPLIFIER, DC - 3 GHz Typical Applications This is ideal for: 0 Gb/s Lithium Niobate/ Mach Zender Fiber Optic Modulators Broadband Gain Block for Test & Measurement Equipment Broadband Gain Block
Data Sheet. 3Px. ATF Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package. Features. Description
ATF-33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago s ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-7 (SOT-343) surface mount
71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710
Data Sheet FEATURES Gain: db typical Output power for db compression: dbm typical Saturated output power: 29 dbm typical Output third-order intercept: dbm typical Input return loss: 8 db typical Output
= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA0060002D 2 Watt, MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
Features. = +25 C, Vdd 1, 2, 3 = +3V
v.91 HMC519 AMPLIFIER, 1-32 GHz Typical Applications The HMC519 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors
TGA GHz 2.5 Watt, 25dB Power Amplifier. Key Features and Performance. Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA
13-17 GHz 2.5 Watt, 25dB Power Amplifier Preliminary Measured Performance Bias Conditions: Vd=7V Id=640mA Key Features and Performance 34 dbm Midband Pout 25 db Nominal Gain 7 db Typical Input Return Loss
CGHV60040D. 40 W, 6.0 GHz, GaN HEMT Die. Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms
Rev 1.1 March 2019 CGHV60040D 40 W, 6.0 GHz, GaN HEMT Die Cree s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium
HMC998. Amplifiers - Linear & Power - Chip. GaAs phemt MMIC 2 WATT POWER AMPLIFIER, GHz. Electrical Specifications, T A.
v1.811 2 WATT POWER AMPLIFIER,.1-22 GHz Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure Fiber Optics Functional Diagram
MECGaNC30. 4 to 6 GHz GaN HEMT Power Amplifier. Main Features. Product Description. Applications
Main Features 0.25µm GaN HEMT Technology 4.1 5.9 GHz full performances Frequency Range W Output Power @ Pin 27.5 dbm 37% PAE @ Pin 27.5 dbm % PAE @ Pout Watt 27 db Small Signal Gain Product Description
Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel
Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised
GaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
Data Sheet GaAs, phemt, MMIC, Power Amplifier, GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): 1 dbm typical Gain: 11
Features. Applications. Symbol Parameters/Conditions Units Min. Max.
AMMC - 622 6-2 GHz Low Noise Amplifier Data Sheet Chip Size: 17 x 8 µm (67 x 31. mils) Chip Size Tolerance: ± 1 µm (±.4 mils) Chip Thickness: 1 ± 1 µm (4 ±.4 mils) Pad Dimensions: 1 x 1 µm (4 ±.4 mils)
D1H010DA1 10 W, 6 GHz, GaN HEMT Die
D1H010DA1 10 W, 6 GHz, GaN HEMT Die D1H010DA1 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT). The D1H010DA1, operating at 48 V, offers high efficiency, great gain, easy of
Features. Noise Figure db Supply Current (Idd) ma Supply Voltage (Vdd) V
v2.418 Typical Applications The HMC797A is ideal for: Test Instrumentation Military & Space Fiber Optics Functional Diagram Features High P1dB Output Power: +29 dbm High Psat Output Power: +31 dbm High
2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The is wideband GaAs MMIC
Data Sheet. AMMC GHz 0.2 W Driver Amplifier. Features. Description. Applications
AMMC-6333 18 33 GHz.2 W Driver Amplifier Data Sheet Chip Size: x 13 m (1 x 51 mils) Chip Size Tolerance: ± 1 m (±.4 mils) Chip Thickness: 1 ± 1 m (4 ±.4 mils) Pad Dimensions: 1 x 1 m (4 x 4 ±.4 mils) Description
TGF um Discrete GaAs phemt
Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 20 GHz 29.5 dbm Typical Output Power
9-10 GHz GaAs MMIC Core Chip
9-10 GHz GaAs MMIC Core Chip Features Functional Diagram Frequency Range: 9GHz 10GHz Tx Small Signal Gain: 28dB Rx Small Signal Gain: 4dB Tx Output P1dB : 22dBm Tx Output Psat : 23dBm Input Return Loss
Data Sheet. ATF Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package. Features. Description. Specifications
ATF-34143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago s ATF-34143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-7 (SOT 343) surface mount
Surface Mount Package SOT-343. Pin Connections and Package Marking. 5Px GATE
ATF-3143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago s ATF-3143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-7 (SOT-343) surface mount
NPA100-D GHz GaN 20W Power Amplifier. Product Description: Key Features:
Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.
CMD GHz Distributed Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Vdd Description RFOUT The CMD97 is a wideband GaAs MMIC driver amplifier ideally suited
= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db
CMPA273575D 75 W, 2.7-3.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA273575D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
Features. = +25 C, Vdd = +10V, Idd = 350mA
Typical Applications The is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: +28 dbm High : 14 db High Output IP3: +41 dbm Single Supply: +V @ 3 ma Ohm
= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN
CMPA80B05D 5 W, 8.0 -.0 GHz, GaN MMIC, Power Amplifier Cree s CMP80B05D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has
CMD GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wideband performance High gain High linearity HMC98 replacement Small die size RFIN Vdd1 Vdd Vdd3 RFOUT Description The CMD91 is a wideband GaAs MMIC driver amplifier
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier December 2012 Rev0 DESCRIPTION AMCOM s AM357037WM is a broadband GaAs MMIC Power Amplifier. It has a nominal CW performance of 26dB small signal gain, and 37dBm (5W) saturated
71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710
FEATURES Gain: db typical Output power for db compression: dbm typical Saturated output power: 29 dbm typical Output third-order intercept: dbm typical Input return loss: 8 db typical Output return loss:
CMD GHz Distributed Low Noise Amplifier RFIN
- GHz Distributed Low Noise Amplifier Features Wide bandwidth Single positive supply voltage Low noise figure Small die size Description Applications Wideband communication systems Point-to-point radios
Advance Datasheet Revision: April 2015
APN 1-1 GHz Advance Datasheet Revision: April Applications Point-to-Point Digital Radios Point-to-Multipoint Digital Radios VSAT Test Instrumentation X = 3 um Y = 3 um Product Features RF frequency: 1
Features. = +25 C, Vdd = 5V
v1.1 AMPLIFIER, 3. - 7. GHz Typical Applications The HMC39A is ideal for: Point-to-Point Radios VSAT LO Driver for HMC Mixers Military EW, ECM, C 3 I Space Functional Diagram Features Gain: 17. db Noise
Features OUT E S T CODE. = +25 C, Vdd= 8V, Idd= 60 ma*
E S T CODE E S T CODE v1.818 HMC6 AMPLIFIER, DC - 2 GHz Typical Applications Features The HMC6 is ideal for: Noise Figure: 2.5 db @ 1 GHz Telecom Infrastructure Microwave Radio & VSAT Military & Space
Features. = +25 C, Vdd= +5V
Typical Applications This is ideal for: Wideband Communication Systems Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation * VSAT Functional Diagram