NEC's 1 W, L&S-BAND Medium POWER GaAs HJ-FET. Gate 0.6 ± ± 0.2. ηadd Power Added Efficiency % PACKAGE OUTLINE 79A

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1 NEC's 1 W, L&S-BAND Medium POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS (Units in mm) LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-, PCS HIGH OUTPUT POWER: 3 dbm TYP with 5. V Vdc 7 dbm TYP with 3.5 V Vdc HIGH LINEAR GAIN: 1 db TYP at 1.9 GHz LOW THERMAL RESISTANCE: 3 C/W DESCRIPTION NEC's NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-, and MMDS transmitter and subscriber applications. It is capable of delivering Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures..9 ±. 5.7 Max.6 ±.15 Gate 4. Max Source T H X PACKAGE OUTLINE 79A Source Drain Gate Drain. ± Max 1. Max 1. Max.4 ±.15. Max 5.7 Max 3.6 ±.. ± ±. (Bottom View) TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 5 C) SYMBOLS CHARACTERISTICS units MIN TYP MAX TEST CONDITIONS POUT Output Power dbm PIN = dbm. GL Linear Gain 1 db 1. ηadd Power Added Efficiency % 5 ID Drain Current ma 35 ELECTRICAL CHARACTERISTICS (TC = 5 C) PART NUMBER PACKAGE OUTLINE NE651R479A SYMBOLS CHARACTERISTICS units MIN TYP MAX TEST CONDITIONS POUT Output Power dbm GL Linear Gain 1 db 1. ηadd Power Added Efficiency % 5 6 ID Drain Current ma IDSS Saturated Drain Current A.7 VDS =.5 V, VGS = V VP Pinch-Off Voltage V VDS =.5 V, ID = ma BVGD Gate to Drain Break Down Voltage V 1 IGD = ma RTH Thermal Resistance, Channel to Case C/W 3 5 Notes: 1. PIN = dbm.. DC performance is % tested. Wafers are sample tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for sample lot. 79A f = 1.9 GHz, VDS = 5 V PIN = +15 dbm, RG = 1 k Ω, IDSQ = 5 ma (RF OFF) f = 1.9 GHz, VDS =3.5 V PIN = +15 dbm, RG = 1 k Ω, IDSQ = 5 ma (RF OFF) California Eastern Laboratories

2 TYPICAL 3.5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 5 C) SYMBOLS CHARACTERISTICS units MIN TYP MAX TEST CONDITIONS POUT Output Power dbm 7. GL Linear Gain 1 db. ηadd Power Added Efficiency % 6 ID Drain Current ma 3 f = 9 MHz, VDS =3.5 V PIN = +13 dbm, RG = 1 k Ω, IDSQ = 5 ma (RF OFF) ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V VGS Gate to Source Voltage V -4 IDS Drain Current A 1. IGF Gate Forward Current ma IGR Gate Reverse Current ma PT Total Power Dissipation W.5 TCH Channel Temperature C 15 TSTG Storage Temperature C -65 to +15 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on a 5 x 5 x 1.6 mm double copper clad epoxy glass PWB. TA = +5 C RECOMMENDED OPERATING LIMITS SYMBOL PARAMETER UNITS MIN TYP MAX VDS Drain to Source Voltage V GCOMP Gain Compression 1 db 3. TCH Channel Temperature C Recommended maximum gain compression is 3. db at VDS = 4. to 5.5 V. ORDERING INFORMATION PART NUMBER NE651R479A-T1-A NE651R479A-A 1. Embossed Tape, 1 mm wide. QTY 1 kpcs/reel Bulk, Pcs. Min.

3 TYPICAL PERFORMANCE CURVES (TA = 5 C) TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Transconductance, Gm (ms) Drain Current, ID (A) Total Power Dissipation, PT (W) RTH = 5 C/W Gate Voltage, VG (V) Case/Circuit Temperature (TC) C 1.5 DRAIN CURRENT vs. DRAIN VOLTAGE 3. MAXIMUM AVAILABLE GAIN vs. FREQUENCY Drain Current, ID (A) Drain Voltage, VD (V) VGS = V -.V -.4V -.6V -.V -1.V Maximum Available Gain, GMAG (db) V, 5 ma 3.5 V, 5 ma Frequency, f (GHz) 4.6 V, ma

4 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 j5 j - j S S11 S 5 5 S1 -j -j5 -j5 -j Coordinates in Ohms Frequency in GHz VD = 5 V, ID = ma 17.5 VD = 5 V, ID = ma FREQUENCY S11 S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Gain calculation: MAG = S1 S1 (K ± When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 K - 1 ). MAG = Maximum Available Gain MSG = Maximum Stable Gain

5 TYPICAL SCATTERING PARAMETERS (TA = 5 C) j5 4. j5 j S1 +3 j S11 S S1 + -j j5 -j5 -j Coordinates in Ohms Frequency in GHz VD = 3.5 V, ID = 5 ma VD = 3.5 V, ID = 5 ma FREQUENCY S11 S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Gain calculation: MAG = S1 S1 (K ± When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 K - 1 ). MAG = Maximum Available Gain MSG = Maximum Stable Gain

6 NE651R79A APPLICATION CIRCUIT ( GHz) C3 C9 C11 P1 GND VG J3 VD J4 GND C C C C13 C1 RFIN J1 C5 R1 C6 T H X U1 C4 C1 J RFOUT 637 NE65XXX79A-EV Contact CEL Engineering for artwork and more detailed information..34 J3 VG J4 VD C13 C11 C9 C3 L =.9 W =. L =.74 W =. C C C C1 J1 RF Input L =. W =.5 C5 R6 NE651R479A C4 L =.6 W =.5 C1 J RF Output 1 TF-637 TEST CIRCUIT BLK X 3/16 PHILLIPS PAN HEAD MA1J C, C3 CASE 1 pf CAP MURATA 13 1 MCR3J1 R1 63 OHM RESISTOR ROHM 1 A5R1CP15X C1, C5 CASE A 5.1 pf CAP ATC 11 1 ACP15X C4 CASE A. pf CAP ATC 1 A1R5JP15X C6 CASE A 1.5 pf CAP ATC 9 491A5K5AS-X C1, C13 CASE A 1uF KEMET GRM4X7R4K5BL C, C11 5 1uF CAP MURATA 7 GRM4CGJ5BD C, C9 5 pf CAP MURATA 6 1 NE65179A U1 IC NEC P1 GROUND LUG CONCORD J3, J4 FEEDTHRU MURATA J1, J FLANGE MOUNT JACK RECEPTACLE FD-637 PCB NE65379A-EVAL FABRICATION DRAWING 1

7 NE651R79A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3.5 V and VDS = 5 V Gain and saturated power vs. frequency 1 3 Gain and saturated power vs. frequency Gain, G (db) Gain (db) 3.5 V at 5 ma Gain (db) 3.5 V at 5 ma POUT (db) 3.5 V at 5 ma POUT (db) 3.5 V at 5 ma Saturated Power, POUT (dbm) Gain, G (db) Gain (db) 5 V at 5 ma Gain (db) 5 V at 5 ma POUT (db) 5 V at 5 ma POUT (db) 5 V at 5 ma Saturated Power, POUT (dbm) Frequency, f (GHz) Frequency, f (GHz) POWER ADDED EFFICIENCY& GAIN vs. OUTPUT POWER POWER ADDED EFFICIENCY& GAIN vs. OUTPUT POWER 7 7 Gain, GA (db) Gain, IDSQ = 5 ma PAE, IDSQ = 5 ma Gain, IDSQ = ma PAE, IDSQ = ma Gain, IDSQ = 5 ma PAE, IDSQ = 5 ma FC = 1.96 GHz, VDS = 3.5 V Power Added Efficiency, PAE (%) Gain, GA (db) Gain, IDSQ = 5 ma PAE, IDSQ = 5 ma Gain, IDSQ = ma PAE, IDSQ = ma Gain, IDSQ = 5 ma PAE, IDSQ = 5 ma FC = 1.96 GHz, VDS = 5 V Power Added Efficiency, PAE (%) Output Power, POUT (dbm) Output Power, POUT (dbm) Third Order Intermodulation Distortion, IM3 (dbc) Third Order Intermodulation vs. TOTAL Output Power FC = 1.96 GHz, POUT = Each Tone VDS = 3.5 V IDSQ = 5 ma IDSQ = ma IDSQ = 5 ma Total Output Power, POUT (dbm) Third Order Intermodulation Distortion, IM3 (dbc) Third Order Intermodulation vs. TOTAL Output Power FC = 1.96 GHz, POUT = Each Tone VDS = 5 V IDSQ = 5 ma IDSQ = ma IDSQ = 5 ma Total Output Power, POUT (dbm)

8 TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 5 V, f =.66 GHz Output Power, POUT (dbm) OUTPUT POWER vs. INPUT POWER Test Condition: Circuit optimized for P-dB from.64 to.69 GHz Instantaneous Bandwidth when biasing at 5 V 5 ma 1 5 ma ma 15 ma ma 3 ma 35 ma Input Power, PIN (dbm) Third Order Intermodulation Distortion, IM3 (dbc) ThIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER Test Condition: Circuit optimized for P-dB from.64 to.69 GHz Instantaneous Bandwidth when biasing at 5 V 5 ma 5 ma ma 15 ma ma 3 ma 35 ma Total Output Power, POUT (dbm)

9 RECOMMENDED P.C.B. LAYOUT (Units in mm) Drain Gate Source through hole.x RECOMMENDED SOLDERING CONDITIONS 1 This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your CEL sales representative. Soldering Method Infrared Reflow Package peak temperature: 35 C or below IR35-- Time: 3 seconds or less (at C) Count:, Exposure limit: none Partial Heating PIN temperature: 6 C - Time: 5 seconds or less (per pin row) Exposure limit: none Soldering Conditions 1. Caution: Do not use different soldering methods together (except for partial heating). Recommended CONDITION SYMBOL

10 NONLINEAR MODEL SCHEMATIC Ldpkg L=.1 nh DRAIN GATE Lspkg L=.1 nh Q1 Lg L=1.45 nh Ld L=5 nh Cdspkg C=.1 pf Cdspkg C=.1 pf FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO RG 1. VTOSC RD. ALPHA 1.5 RS.5 BETA.964 RGMET GAMMA KF GAMMADC (). AF 1 Q 1.5 TNOM 7 DELTA XTI 3 VBI.6 EG 1.43 IS 1e-16 VTOTC N 1 BETATCE RIS FFE 1 RID TAU 3e-1 CDS.e-1 RDB 6 CBS e-1 CGSO (3) e-1 CGDO (4) 1.1e-1 DELTA1.3 DELTA. FC VBR Infinity (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: () GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD Lspkg L=.1 nh SOURCE UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms MODEL RANGE Frequency: to 4 GHz Bias: VDS =. V to 4.6 V, ID = 5 ma to 35 ma Date: 6//3 5/6/ A Business Partner of NEC Electronics Corporation

11 459 Patrick Henry Drive Santa Clara, CA Telephone: (4) Facsimile: (4) 9-79 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive /95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 3/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) < PPM Concentration contained in CEL devices -A -AZ Not Detected (*) Mercury < PPM Not Detected Cadmium < PPM Not Detected Hexavalent Chromium < PPM Not Detected PBB < PPM Not Detected PBDE < PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.