NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT 2.0 ± 0.2
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1 FEATURES NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT HIGH POWER GAIN: GA = 6 db TYP, MSG = 8 db TYP at f = 2 GHZ, VCE = 2 V, IC = 3 ma, ZS = ZL = 50 Ω LOW NOISE: NF =.0 db TYP at f = 2 GHZ, VCE = 2 V, IC = 3 ma, ZS = ZL = 50 Ω OIP3 = +25 dbm TYP at f = 2 GHZ, VCE = 2 V, IC = 0 ma, ZS = ZOPT,TONE 4 PIN SUPER MINI MOLD PACKAGE GROUNDED EMITTER TRANSISTOR DESCRIPTION NEC's is a low cost NPN GaAs HBT(InGaP) suitable for front end LNA's in L/S band mobile communications applications. The is housed in a 4-pin super mini-mold package, making it ideal for high-density design. NEC's stringent quality assurance and test procedures ensure the highest reliability performance ELECTRICAL CHARACTERISTICS (TA = 25 C) PART NUMBER PACKAGE OUTLINE 8 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX IEBO Emitter to Base Leakage Current at VEBO = 3 V µa ICBO Collector to Base Leakage Current at VCBO = 3 V µa hfe DC Current Gain at VCE = 2 V, IC = 3 ma NF Noise Figure at VCE = 2 V, IC = 3 ma, f = 2 Ghz, ZS = ZL = 50 Ω db.0.5 Ga Associated Gain at VCE = 2 V, IC = 3 ma, f = 2 Ghz, db 4 6 ZS = ZL = 50 Ω S2e 2 Insertion Power Gain at VCE = 2 V, IC = 20 ma, f = 2 Ghz db 20 OIP3 Out Third - Order Distortion Intercept Point at VCE = 2 V, dbm 25 f = 2 GHz, ZS = ZL = ZOPT, IC = 0 ma, tone PACKAGE DIMENSIONS (Units in mm) 2.0 ± ± 0. PACKAGE OUTLINE 8 2. ± ± V45 PIN CONNECTIONS. Emitter 2. Base 3. Emitter 4. Collector (LEADS 2, 3, 4).3 0 to California Eastern Laboratories
2 ABSOLUTE MAXIMUM RATINGS (TA = +25 C) SYMBOLS PARAMETERS UNITS RATINGS VCEO Collector to Emitter Voltage V 5.0 VCBO Collector to Base Voltage V 3.0 VEBO Emitter to Base Voltage V 3.0 IC Collector Current ma 40 IB Base Current ma 0.3 PT Total Power Dissipation mw 50 Tj Junction Temperature C +25 TSTG Storage Temperature C -65 to +25 Note:. Operation in excess of any of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVE (TA = 25 C) Noise Figure, NF (db) TYPICAL SCATTERING PARAMETERS (TA = 25 C) VCE = 2.0 V, IC = 3 ma NOISE FIGURE vs. FREQUENCY 2 V 5 ma 2 V 0 ma Frequency, F (GHz) RECOMMENDED OPERATING CONDITIONS (TA = +25 C) SYMBOLS PARAMETERS UNITS MIN. TYP. MAX. VCE Collector to Emitter Voltage V IC Collector Current ma 30 PIN Input Power dbm 0 FREQUENCY S S2 S2 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG
3 TYPICAL SCATTERING PARAMETERS, cont. (TA = 25 C) VCE = 2.0 V, IC = 0 ma FREQUENCY S S2 S2 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 2.0 V, IC = 20 ma FREQUENCY S S2 S2 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG
4 PACKAGE DIMENSIONS (Units in mm) ORDERING INFORMATION 2.0 ± ± ± ± PIN CONNECTIONS. Emitter 2. Base 3. Emitter 4. Collector RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your CEL Sales Representative. SOLDERING SOLDERING RECOMMENDED CONDITION METHOD CONDITIONS SYMBOL Infrared Reflow Package Peak Temperature: 230 C or below IR Time: 30 seconds or less ( at 20 C) Count: 3, Exposure limit: None VPS Package Peak Temperature: 25 C or below VP Time: 40 seconds or less (at 200 C) Count: 2, Exposure limit: None WAVE SOLDERING Soldering Bath Temperature: 260 C or below WS Time: 0 seconds or less (at 200 C) Count:, Exposure limit: None PARTIAL HEATING Pin Temperature: 300 C or below Time: 3 seconds or less (per side of device) Exposure limit: None Note:. After opening the dry pack, keep it in a place below 25 C and 65% RH for the allowable storage period. CAUTION: Do not use different soldering methods together (except for partial heating). PRECAUTION: Avoid high static voltage and electric fields. PART PACKAGE OUTLINE 8 NUMBER 0.60 V (LEADS 2, 3, 4).3 0 to T-A 3 K pcs/reel QUANTITY Note: 8-mm wide embossed tape, pin 3 (Emitter), pin 4 (Collector) face perforated side of tape.
5 NONLINEAR MODEL SCHEMATIC 2.0 ± ± ± ± BJT NONLINEAR MODEL PARAMETERS () Parameters Q Parameters Q IS 7.8e-25 MJC 0.07 BF 58 XCJC 0.2 NF.006 CJS 0 VAF 000 VJS 0.75 IKF.95 MJS 0 ISE 6.36e-8 FC 0.5 NE.92 TF 2e-2 BR XTF 3 NR VTF VAR 000 ITF 0.05 IKR 000 PTF 0 ISC 0 TR 50e-2 NC 2.0 EG.5 RE.5 XTB 0 RB 7 XTI 3 RBM KF 0 IRB 000 AF RC.2 CJE 0.27 VJE 0.99 MJE 0.2 CJC 0.065e-2 VJC 0.73 () Gummel-Poon Model ADDITIONAL PARAMETERS Parameters Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 4 CCB CCE LB LC LE CCBPKG CCEPKG CBEPK LBX LCX LEX (LEADS 2, 3, 4).3 0 to e-2 0.9e e-9 0.8e-9 0.2e e e-2 0.5e e-9 0.e e-9 MODEL RANGE Frequency: 0.3 to 0 GHz Bias: VCE = 0.7 V to 2 V, IC = ma to 0 ma Date: 02/ /22/03 A Business Partner of NEC Compound Semiconductor Devices, Ltd.
6 Subject: Compliance with EU Directives 4590 Patrick Henry Drive Santa Clara, CA Telephone: (408) Facsimile: (408) CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003//EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) < 000 PPM Concentration contained in CEL devices -A -AZ Not Detected (*) Mercury < 000 PPM Not Detected Cadmium < 00 PPM Not Detected Hexavalent Chromium < 000 PPM Not Detected PBB < 000 PPM Not Detected PBDE < 000 PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.
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