NEC's NPN SILICON TRAN SIS TOR PACKAGE OUTLINE M03

Transcription

1 FEATURES MINIATURE M PACKAGE: Small tran sis tor outline Low profile /.9 mm package height Flat lead style for better RF performance IDEAL FOR > GHz OSCILLATORS LOW NOISE, HIGH GAIN LOW Cre UHSO GHz PROCESS DESCRIPTION NEC's NPN SILICON TRAN SIS TOR NEC's transistor is designed for oscillator ap pli - ca tions above GHz. The features low voltage, low current op er a tion, low noise, and high gain. NEC's low profile/flat lead style "M" pack age is ideal for today's portable wireless ap pli ca tions. ELECTRICAL CHARACTERISTICS (TA = C) OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M PART NUMBER EIAJ REG IS TERED NUMBER SC76 PACKAGE OUTLINE M SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ft Gain Bandwidth at VCE = V, IC = ma, f = GHz GHz 7 SE Insertion Power Gain at VCE = V, IC = ma, f = GHz db NF Noise Figure at VCE = V, IC = ma, f = GHz, ZS = ZOPT db.. Cre Reverse Transfer Capacitance at VCB =. V, IE = ma, f = MHz pf.. ICBO Collector Cutoff Current at VCB = V, IE = na IEBO Emitter Cutoff Current at VEB = V, IC = na hfe DC Current Gain at VCE = V, IC = ma Notes:. Electronic Industrial Association of Japan.. Pulsed measurement, pulse width µs, duty cycle %.. Collector to base capacitance when the emitter is grounded. ±.. (.9)..9±..±. PIN CON NEC TIONS. Emitter. Base. Collector.±..±. UE.± California Eastern Laboratories

2 ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9. VCEO Collector to Emitter Voltage V. VEBO Emitter to Base Voltage V. IC Collector Current ma PT Total Power Dissipation mw TJ Junction Tem per a ture C TSTG Storage Temperature C -6 to + Notes:. Operation in excess of any one of these parameters may result in permanent damage.. With device mounted on. cm X. mm (t) glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = C) Total Power Dissipation, Ptot (mw) 7 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass epoxy PCB (. cm x. mm (t) ) 7... Ambient Temperature, TA ( C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V Base to Emitter Voltage, VBE (V) Reverse Transfer Capacitance, Cre (pf) REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE..... Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE µa µa µa µa µa µa µa µa µa IB = µa f = MHz Collector to Emitter Voltage, VCE (V)

3 TYPICAL PERFORMANCE CURVES (TA = C) Insertion Power Gain, Se (db) DC Current Gain, hfe Gain Bandwidth Product, ft (GHz) DC CURRENT GAIN. 6 VCE = V GAIN BANDWIDTH PRODUCT 6 VCE = V f = GHz MAG Se VCE = V f = GHz DC Current Gain, hfe Insertion Power Gain, Se (db) Insertion Power Gain, Se (db) DC CURRENT GAIN. VCE = V vs. FREQUENCY. MAG Se Frequency, f (GHz) VCE = V Ic = ma VCE = V f = GHz 6 MAG Se

4 TYPICAL PERFORMANCE CURVES (TA = C) Insertion Power Gain, Se (db) Insertion Power Gain, Se (db) Noise Figure, NF (db) 6 Se NOISE FIGURE, ASSOCIATED GAIN Ga NF VCE = V f = GHz VCE = V f = GHz Ga NF VCE = V f = GHz 6 6 Associated Gain, Ga (db) Insertion Power Gain, Se (db) Insertion Power Gain, Se (db) Noise Figure, NF (db) 6 Se NOISE FIGURE, ASSOCIATED GAIN VCE = V f = GHz VCE = V f = GHz Ga NF Ga NF VCE = V f = GHz 6 6 Associated Gain, Ga (db)

5 TYPICAL SCATTERING PARAMETERS (TA = C) j j -j -j VC = V, IC = ma S j S -j. to. GHz by. j -j FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Note:. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and values are used. = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain = Maximum Stable Gain S -9 S. to. GHz by. -

6 TYPICAL SCATTERING PARAMETERS (TA = C) j j -j -j S VC = V, IC = ma j S -j. to. GHz by. j -j FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Note:. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and values are used. = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain = Maximum Stable Gain S -9 S. to. GHz by. -

7 TYPICAL SCATTERING PARAMETERS (TA = C) j j -j -j S j S -j. to. GHz by. j -j S -9. to. GHz by. VC = V, IC = ma FREQUENCY S S S S K MAG GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Note:. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and values are used. = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain = Maximum Stable Gain S -

8 NONLINEAR MODEL SCHEMATIC Parameters Q Parameters Q IS e- MJC.76 BF. XCJC. NF. CJS VAF VJS.7 IKF 9e- MJS ISE e- FC. NE. TF 6.e- BR XTF. NR. VTF VAR. ITF. IKR 7e- PTF ISC.e- TR NC. EG. RE. XTB RB. XTI RBM. KF* IRB 79e-6 AF* RC. CJE.6e- VJE.9 MJE.6 CJC e- VJC.9 () Gummel-Poon Model Base LBPKG. nh CBEPKG. pf LB. nh BJT NONLINEAR MODEL PARAMETERS () CCBPKG. pf ADDITIONAL PARAMETERS Parameters Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. CCB. pf Q Emitter LE. nh LEPKG.9 nh CCE. pf LCPKG.6 nh CCEPKG.7 pf CCB CCE LB LE CCBPKG CBEPKG CCEPKG LBPKG LCPKG LEPKG Collector MODEL TEST CONDITIONS Frequency:. to 6 GHz Bias: VCE =. V, IC = ma to 9 ma Date: 9/. pf. pf. nh. nh. pf. pf.7 pf. nh.6 nh.9 nh AF and KF are /f noise parameters and are bias dependent. The appropriate values for the /f noise parameters (AF and KF) shall be chosen from the table below, according to the desired current range. IC = ma IC = ma IC = ma AF..7.9 KF 7.e-.e- 6.9e- For a better understanding on AF and KF parameters, please refer to AN6. 9// -97 A Business Partner of NEC Compound Semiconductor Devices, Ltd.