The 2SC4177 is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package
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1 DESCRIPTION FEATURES The is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package ORDERING INFORMATION APPLICATIONS Package Type SC-70 Part Number -LX General Purpose Amplification PIN DESCRIPTION LX: hfe X: 4~7 Note Please refer to page 2 SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products 1. BASE 2. EMITTER 3. COLLECTOR REV1.0 - AUG 2016 RELEASED
2 ABSOLUTE MAXIMUM RATINGS TA=25 C, unless otherwise noted VCBO, Collector-Base Voltage VCEO, Collector-Emitter Voltage VEBO, Emitter-Base Voltage IC, Collector Current PC, Collector Power Dissipation RθJA, Thermal Resistance from Junction to Ambient 60V 50V 5V 100mA 150mW 833 C/W TJ, Junction Temperature 150 C TSTG, Storage Temperature -55 C ~150 C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS TA=25 C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO IC= 100μA, IE= V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB= V Emitter-Base Breakdown Voltage V(BR)EBO IE=100μA,IC= V Collector Cut-Off Current ICBO VCB=60V, IE= na Emitter Cut-Off Current IEBO VEB=5V, IC= na L DC Current Gain hfe VCE=6V, IC=1mA L L L Collector- Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA V Base-Emitter Voltage VBE VCE=6V, IC=1mA V Transition Frequency ft VCE=6V, IC=10mA MHz Collector Output Capacitance Cob VCB=6V, IE=0, f=1mhz pf NOTE: Pulse test; pulse width 350μs, duty cycle 2.0%. REV1.0 - AUG 2016 RELEASED
3 TYPICAL CHARACTERISTICS Figure 1. Static Characteristic Figure 2. hfe - IC Figure 3. VCE(sat) - IC Figure 4. VBE(sat) - IC Figure 5. IC - VBE Figure 6. Cob / Cib - VCB / VEB REV1.0 - AUG 2016 RELEASED
4 Figure 7. PC - TA REV1.0 - AUG 2016 RELEASED
5 PACKAGE INFORMATION Dimension in SC-70 (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A b c D E E e TYP TYP. e L REF REF. L θ REV1.0 - AUG 2016 RELEASED
6 IMPORTANT NOTICE AiT Components (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Components integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Components assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale. REV1.0 - AUG 2016 RELEASED
15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit
Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter
Low-frequency Amplifer, high-speed switching small motor drive, muting circuit
Ordering number : EN16A CMH Bipolar Transistor V,.A, Low VCE(sat) NPN Single MCPH http://onsemi.com Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuit Features
CPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications
Ordering number : ENA0A CPH6 Bipolar Transistor 0V, 1A, Low VCE(sat) NPN Dual CPH6 http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers, flash Features Composite type with two NPN
2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C
Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base
2SD1620. Bipolar Transistor 10V, 3A, Low VCE(sat), NPN Single PCP
Ordering number : EN119D SD16 Bipolar Transistor 1V, A, Low VCE(sat), NPN Single PCP http://onsemi.com Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted
High-speed switching applications (switching regulator, driver circuit) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V
Ordering number : ENA9B Bipolar Transistor V, 1A, Low VCE (sat) NPN TO-F-SG http://onsemi.com Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT
2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications
Ordering number : EN18B SD18 Bipolar Transistor V, A, Low VCE(sat), NPN Single NP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption
Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.
Ordering number : ENA18B SC6144SG Bipolar Transistor V, A, Low VCE(sat) NPN TO-F-FS http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current
CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
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DATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
DATA SHEET SILICON TRANSISTOR SC6 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hfe = TYP. (VCE = 6. V, IC =. ma) High Voltage: VCEO
2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single
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CYStech Electronics Corp.
Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3
30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications
Ordering number : EN8A ACH Bipolar Transistor V,.A, Low VCE(sat) PNP Single CPH http://onsemi.com Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacitance
500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N
Ordering number : EN64B SA68N/SC6N Bipolar Transistor ( )V, ( )ma, Low VCE(sat) (PNP)NPN Single -WA http://onsemi.com Applicaitons Capable of being used in the low frequency to high frequency range Features
MCH6101 / MCH6201 MCH6101 / MCH6201. Applications. Features. Specifications ( ) : MCH6101. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN68A PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT processes.
Low collector-to-emitter saturation voltage Large current capacity and wide ASO
Ordering number : EN1F SB11/SD16 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features
Table 1: Device summary Order code Marking Package Packing 2STR SOT-23 Tape and reel
Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
Collector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENA66B SA1 Bipolar Transistor V, A, Low VCE(sat) PNP TO-F-SG http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Low collector-to-emitter
Low collector to emitter saturation voltage Large current capacity
Ordering number : ENC SB1 Bipolar Transisitor V, A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT
(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching
Ordering number : EN8A SA169/SC61 Bipolar Transistor (-)V, (-)1A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT
2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter
Ordering number : EN188C SA1418/SC648 Bipolar Transistor ( )16V, ( ).A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT
MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6
Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features
Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers
Ordering number : EN181B SD168 Bipolar Transistor V, A, Low VCE(sat), NPN Single PCP http://onsemi.com Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers Features
2SB1203/2SD1803. Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 SANYO Semiconductors DATA SHEET SB/SD8 Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter
High-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN18B MCH1/MCH Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features
2STR1160. Low voltage fast-switching NPN power transistor. Features. Description. Applications
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(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption
(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN69D SA16/SC69 Bipolar Transistor (-)V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of
AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE
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2SB1201/2SD Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA)
Ordering number : EN11C SB1/SD181 SANYO Semiconductors DATA SHEET SB1/SD181 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes
2SA2016 / 2SC5569 2SA2016 / 2SC5569. Applications. Features. Specifications ( ) : 2SA2016. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN69B SA16 / SC69 SA16 / SC69 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption
COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc
Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general high-current
2SC5374A. RF Transistor 10V, 100mA, ft=5.2ghz, NPN Single SMCP. Features. Specifications
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Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN9C SB11/SD181 Bipolar Transistor ( )1V, ( )A, Low VCE(sat) (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general
Power Transistor (80V, 1A)
Power Transistor (80V, A) SD898 / SD733 / SD768S / SD863 SD898 / SD733 / SD768S / SD863!Features ) High VCEO, VCEO=80V ) High IC, IC=A (DC) 3) Good hfe linearity 4) Low VCE (sat) ) Complements the SB60
55GN01FA. RF Transistor 10V, 70mA, ft=5.5ghz, NPN Single SSFP. Features. Specifications
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SEMICONDUCTOR TECHNICAL DATA
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SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)
TT2140LS. NPN Triple Diffused Planar Silicon Transistor
Ordering number : ENN1A TT14LS TT14LS NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1V). High reliability
AM9435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
50 Vdc Collector-Base Voltage VCEO. 50 Vdc Collector Current-Continuous VCBO. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit
MMUN Series Bias Resistor Transistor NPN Silicon P b Lead(Pb)Free BASE COLLECTOR R R EMITTER SOT MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 5 Vdc CollectorBase Voltage VCBO
Old Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took
Old Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took
MCC. 2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92
omponents 20736 Marilla Street Chatsworth!"# $%!"# 2N5401 )HDWXUHV Through Hole Package 1 o C Junction Temperature Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
TIP120, TIP121, TIP122,
SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector
MCH5541 PNP/NPN Bipolar Transistor ( )30V, ( )700mA, VCE(sat) ; ( 220)190mV (max)
MCH41 PNP/NPN Bipolar Transistor ( )V, ( )ma, VCE(sat) ; ( )19mV (max) Overview MCH41 is ( )V, ( )ma, VCE(sat) ; ( )19mV (max), PNP/NPN in 1 type MCPH, Bipolar Transistor. Electrical Connection Features
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
NPN SILICON GERMANIUM RF TRANSISTOR NESG331M NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M, 212 PKG) FEATURES The device is an ideal choice for
NPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous
PNP Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous
Features. Description. Table 1: Device summary Order code Marking Package Packing BU931P BU931P TO-247 Tube
Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - production data Features AEC-Q101 qualified Very rugged Bipolar technology High operating junction temperature
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
DPAK For Surface Mount Applications
SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H/D DPAK For Surface Mount Applications... for general purpose power and switching such as output or driver stages in applications such as switching
DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION -PIN SUPER MINIMOLD (8) High ft: ft = GHz TYP. @, IC = ma, f = GHz Low noise
UNISONIC TECHNOLOGIES CO., LTD 2SC5305
UNISONIC TECHNOLOGIES CO., LTD 2SC535 HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High Hfe For Low Base Drive Requirement * Suitable For Half Bridge Light Ballast Applications * Built-In
MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
AM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). FEATURES 20V/4.0A, RDS(ON)
AM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)