2SB1201/2SD Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA)
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1 Ordering number : EN11C SB1/SD181 SANYO Semiconductors DATA SHEET SB1/SD181 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast switching speed Small and slim package making it easy to make SB1/SD181-used sets smaller Specifications ( ): SB1 Absolute Maximum Ratings at Ta= C PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)6 V Collector-to-Emitter Voltage VCEO (--) V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--) A Collector Current (Pulse) ICP (--)4 A Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) SB1S-E SB1T-E SD181S-E SD181T-E Continued on next page. SB1S-TL-E SB1T-TL-E SD181S-TL-E SD181T-TL-E : Base : Collector : Emitter 4 : Collector to : Base : Collector : Emitter 4 : Collector.. SANYO : TP SANYO : TP-FA Product & Package Information Package : TP Package : TP-FA JEITA, JEDEC : SC-64, TO-1 JEITA, JEDEC : SC-6, TO- Minimum Packing Quantity : pcs./bag Minimum Packing Quantity : pcs./reel Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA),4 B1 D181,4 RANK LOT No. RANK LOT No. 1 1 TL SB1 SD TKIM TB-96, TA-418/94TN (KT)/998HA (KT)/89MO/41KI/46KI, TS No.11-1/
2 SB1/SD181 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC.8 W Tc= C 1 W Junction Temperature Tj C Storage Temperature Tstg -- to + C Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)V, IE=A (--) na Emitter Cutoff Current IEBO VEB=(--)4V, IC=A (--) na DC Current Gain hfe1 VCE=(--)V, IC=(--)mA * 6* hfe VCE=(--)V, IC=(--)1.A 4 Gain-Bandwidth Product ft VCE=(--)V, IC=(--)mA MHz Output Capacitance Cob VCB=(--)V, f=1mhz ()1 pf Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)mA (--.).1 (--.).4 V Base-to-Emitter Saturation Voltage VBE(sat) VCE=(--)1A, IC=(--)mA (--).9 (--)1. V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)μA, IE=A (--)6 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE= (--) V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)μA, IC=A (--)6 V Turn-On Time ton 6 ns Storage Time tstg See specified Test Circuit. (4) ns Fall Time tf ns * : The SB1/SD181 are classified by ma hfe as follows : Rank R S T U hfe to 14 to 8 to 4 8 to 6 Switching Time Test Circuit PW=μs D.C. 1% IB1 IB OUTPUT INPUT VR RB RL Ω Ω + + μf 4μF VBE= --V VCC=V IC=IB1= --IB=mA, VCC=V For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo SB1S-E TP pcs./bag SB1T-E TP pcs./bag SD181S-E TP pcs./bag SD181T-E TP pcs./bag SB1S-TL-E TP-FA pcs./reel Pb Free SB1T-TL-E TP-FA pcs./reel SD181S-TL-E TP-FA pcs./reel SD181T-TL-E TP-FA pcs./reel No.11-/
3 SB1/SD ma IC -- VCE --ma --ma --8mA --6mA --4mA --ma SB ma 4mA IC -- VCE ma 1mA 8mA 4mA ma SD181 Collector Current, I C -- ma I B = Collector-to-Emitter Voltage, V CE -- V ITR9144 IC -- VCE -- SB I B = Collector-to-Emitter Voltage, V CE -- V ITR9146 IC -- VBE --.4 SB1 VCE= --V ma --6mA --ma --4mA --ma --ma --1mA Collector Current, I C -- ma I B = Collector-to-Emitter Voltage, V CE -- V ITR914 IC -- VCE SD I B = Collector-to-Emitter Voltage, V CE -- V ITR914 IC -- VBE.4 SD181 VCE=V. ma 6mA ma 4mA ma ma 1mA Ta= C C -- C Ta= C C -- C Base-to-Emitter Voltage, V BE -- V ITR9148 hfe -- IC SB1 V CE = --V Base-to-Emitter Voltage, V BE -- V ITR9149 hfe -- IC SD181 V CE =V DC Current Gain, h FE Ta= C -- C C DC Current Gain, h FE Ta= C C -- C ITR ITR911 No.11-/
4 SB1/SD181 Gain-Bandwidth Product, ft -- MHz ft -- IC SB1 VCB=V Gain-Bandwidth Product, ft -- MHz ft -- IC SD181 VCB=V Output Capacitance, Cob -- pf ITR91 Cob -- VCB SB1 f=1mhz Output Capacitance, Cob -- pf ITR91 Cob -- VCB SD181 f=1mhz Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv ITR Collector-to-Base Voltage, V CB -- V VCE(sat) -- IC SB1 I C / I B = Ta= C -- C C Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv 1. ITR91 Collector-to-Base Voltage, V CB -- V VCE(sat) -- IC SD181 I C / I B = Ta= C -- C C Base-to-Emitter Saturation Voltage, V BE (sat) -- V ITR916 VBE(sat) -- IC -- SB1 I C / I B = --1. Ta= -- C C C Base-to-Emitter Saturation Voltage, V BE (sat) -- V ITR91 VBE(sat) -- IC SD181 I C / I B = 1. Ta= -- C C C ITR ITR919 No.11-4/
5 SB1/SD A S O DC operation Ta= C.1 SB1 / SD181 Tc= C Single pulse For PNP, the minus sign is omitted Collector-to-Emitter Voltage, V CE -- V ITR916 1ms ms DC operation Tc= C ms Collector Dissipation, P C -- W PC -- Ta SB1 / SD181 Ideal heat dissipation No heat sink Ambient Temperature, Ta -- C ITR9161 No.11-/
6 SB1/SD181 Taping Specification SB1S-TL-E, SB1T-TL-E, SD181S-TL-E, SD181T-TL-E No.11-6/
7 SB1/SD181 Outline Drawing Land Pattern Example SB1S-TL-E, SB1T-TL-E, SD181S-TL-E, SD181T-TL-E Mass (g) Unit.8 * For reference mm Unit: mm No.11-/
8 Bag Packing Specification SB1S-E, SB1T-E, SD181S-E, SD181T-E SB1/SD181 No.11-8/
9 Outline Drawing SB1S-E, SB1T-E, SD181S-E, SD181T-E SB1/SD181 Mass (g) Unit.1 * For reference mm No.11-9/
10 SB1/SD181 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc., please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 1. Specifications and information herein are subject to change without notice. PS No.11-/
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