unit:mm 2009B Tc=25 C V V
|
|
- Penelope Megan Morrison
- 5 years ago
- Views:
Transcription
1 Ordering number:enn9d PNP/NPN Epitaxial Planar Silicon Transistors SA9/SC911 16/14mA High- Switching and AF W Predriver Applications Features Adoption of FBET process. High breakdown voltage. Good linearity of h FE and small C ob. Fast switching speed. Package Dimensions unit:mm 9B [SA9/SC911] ( ) : SA9 Specifications Absolute Maximum at Ta = C Electrical Characteristics at Ta = C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-, 1 Chome, Ueno, Taito-ku, TOKYO, 1-84 JAPAN -to-base CBO ( )18 CEO ( )16 Emitter-to-Base EBO ( ) Current I C ( )14 ma Current (Pulse) ICP ( ) ma 1 W Dissipation P C Tc= C W Junction Temperature Storage Temperature 1 : Emitter : : Base SANYO : TO-16 Tj Tstg to + C C ollector Cutoff Current I CB O CB = ( )8, IE ( ). 1 µ A E mitter Cutoff Current I EB O EB = ( )4, IC ( ). 1 µ A DC Current Gain h FE CE = ( ), IC= ( )ma * 4* Gain-Bandwidth Product f T CE = ( ), IC= ( )ma MHz Output Capacitance C ob CB = ( ), f=1mhz ( 4.). pf *: The SA9/SC911 are classified by ma h FE as follows : Continued on next page. Rank R S T h FE to 14 to 8 to TN (KT)/198HA (KT)/D1MH/14KI/1KI/O19KI, TS No.9-1/ 1. min typ max C
2 SA9/SC911 Continued from preceding page. Saturation CE(sat) I C = ( )ma, IB=( )ma min typ. (.14) Turn-ON Time ton See. 1 Fall Time t f See. 1 S torage Time t st g Switching Test Circuit max. (.4) See 1. IN kω I B1 I B OUT Ω R B kω + + kω 1µF 1µF -- I C =I B1 =--I B =ma (For PNP, the polarity is reversed.) mA --.ma IC -- CE SA9 --.4mA --.ma --.ma --.1mA , CE ITR1 IC -- BE SA mA.mA.4mA IC -- CE SC911.mA.mA.1mA IB= IB=, CE IC -- BE SC911 ITR Base-to-Emitter, BE ITR Base-to-Emitter, BE ITR4 No.9-/
3 SA9/SC911 Common Emitter DC Current Gain, hfe hfe -- IC SA9 CE =-- Common Emitter DC Current Gain, hfe hfe -- IC SC911 CE = Gain-Bandwidth Product, ft MHz ITR ft -- IC SA9 CE =-- Gain-Bandwidth Product, ft MHz 1. ITR6 SC911 CE = ft -- IC Output Capacitance, Cob pf ITR Cob -- CB SA9 f=1mhz Output Capacitance, Cob pf 1. ITR8 Cob -- CB SC911 f=1mhz Saturation, CE(sat) to-base, CB -- ITR CE(sat) -- IC SA9 I C / I B = Saturation, CE(sat) to-base, CB -- ITR 1..1 CE(sat) -- IC SC911 I C / I B = ITR1 ITR No.9-/
4 SA9/SC BE(sat) -- IC SA9 IC / IB= BE(sat) -- IC SC911 IC / IB= Base-to-Emitter Saturation, BE(sat) --1. Base-to-Emitter Saturation, BE(sat) 1. Current, IC ma Current, IC ma ITR Current, IC ma ITR4 ICP=mA IC=14mA A S O DC operation SA9 / SC911 DC Single pulse (For PNP, minus sign is omitted.), CE ITR 1 PC -- Tc 1s 1ms SA9 / SC911 Dissipation, PC W PC -- Ta No heat sink SA9 / SC Ambient Temperature, Ta C ITR6 Dissipation, PC W Case Temperature, Tc C ITR No.9-4/
5 SA9/SC911 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July,. Specifications and information herein are subject to change without notice. PS No.9-/
2SC5229. VHF to UHF Wide-Band Low-Noise Amplifier Applications
Ordering number:en NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Low noise : NF= typ (f=ghz). High gain : Se =. typ (f=ghz). High cutoff frequency
More informationMCH6101 / MCH6201 MCH6101 / MCH6201. Applications. Features. Specifications ( ) : MCH6101. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN68A PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT processes.
More informationunit:mm 2059B 2.1 V V
Ordering number:en2755 NPN Epitaxial Planar Silicon Transistor 2SC4402 VHF/UHF Mixer, Local Oscillator, Low- Amplifier Applications Applications VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers.
More information2SA2016 / 2SC5569 2SA2016 / 2SC5569. Applications. Features. Specifications ( ) : 2SA2016. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN69B SA16 / SC69 SA16 / SC69 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption
More informationCPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN CPH61 CPH61 Features NPN / PNP Epitaxial Planar Silicon Transistors Video Output Driver,High-Frequency Amplifier Applications Composite type with NPN transistor and PNP transistor
More information2SC5645. unit : mm 2106A 0.3 3
Ordering number : ENN688 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features Low noise : NF=1.dB typ (f=ghz). High cutoff frequency : ft=ghz typ (VCE=).
More information2SA2099 / 2SC5888. Collector Dissipation Tc=25 C 25 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : EN1A SA99 / SC888 SANYO Semiconductors DATA SHEET SA99 / SC888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications Relay drivers, lamp drivers,
More informationTT2140LS. NPN Triple Diffused Planar Silicon Transistor
Ordering number : ENN1A TT14LS TT14LS NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1V). High reliability
More information2SA1593/2SC4135. SANYO Semiconductors DATA SHEET 2SA1593/2SC4135. Applications. Specifications ( ): 2SA1593
Ordering number : EN11B SA19/SC41 SANYO Semiconductors DATA SHEET SA19/SC41 Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBT processes High breakdown voltage and
More information2SB1201/2SD Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA)
Ordering number : EN11C SB1/SD181 SANYO Semiconductors DATA SHEET SB1/SD181 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes
More information2SB1202/2SD Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection
Ordering number : EN11D SB/SD18 SANYO Semiconductors DATA SHEET SB/SD18 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET and MBIT processes Large
More information2SJ616. unit : mm 2062A
Ordering number : ENNA SJ616 P-Channel Silicon MOSFET SJ616 Preliminary Ultrahigh-Speed Switching Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Package Dimensions unit :
More informationCPH6315. unit : mm 2151A
Ordering number : ENN18 CPH61 P-Channel Silicon MOSFET CPH61 High-Speed Switching Applications Features Low ON-resistance. High-speed switching..v drive. Package Dimensions unit : mm 11A [CPH61].9.1 6
More informationunit : mm When using standard board (material: glass epoxy)
Ordering number: EN 5591 Monolithic Linear IC LA6541D 4-channel Bridge Driver for Compact Discs Functions and Features. 4-channel bridge (BTL) power amplifier.. IO max. 700 ma.. With mute circuit (Affects
More informationMCH6644 MCH6644. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN899 MCH6644 MCH6644 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET
More informationFW342. Mounted on a ceramic board (1500mm 2 0.8mm)1unit, PW 10s. Mounted on a ceramic board (1500mm 2 0.8mm), PW 10s
Ordering number : ENN91 FW4 FW4 Features For motor drives, inverters. N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Composite type with an N-channel MOSFET and a
More informationunit:mm 3018A-SIP10FD 16.7 max min C C * : mm3 Al heat sink used.
Ordering number:enn556f Monolithic Linear IC LA4422 5.8W typ AF Power Amplifier for Car Stereos, Car Radios Features High gain (53dB typ.) and high output (5.8W typ). Soft clip. Small number of external
More informationunit: mm 4201-SIP13 5.6
Ordering number : ENN48 Thick-Film Hybrid IC STK404-140 One-Channel Class AB Audio Power Amplifier IC 10 W Overview The STK404-000 series products are audio power amplifier hybrid ICs that consist of optimally-designed
More informationLA6358N, 6358NS, 6358NM, 6358NT
Ordering number: ENN5234A Monolithic Linear IC LA6358N, 6358NS, 6358NM, 6358NT High-Performance Dual Operational Amplifiers Overview The LA6358 is an IC integrating two high-performance operational amplifiers
More information2SK3815 2SK3815. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN8 SK81 SK81 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
More informationWhen mounted on a glass epoxy circuit board (reference value): mm 76.1 mm 1.6 mm
Ordering number : ENN7391 Monolithic Digital IC PWM Input Forward/Reverse Motor Driver Overview The is a full bridge driver that supports switching between forward and reverse directions. It operates in
More informationSTK Two-Channel Class AB Audio Power Amplifier IC 40W + 40W
Ordering number : ENN747 Thick-Film Hybrid IC Two-Channel Class AB Audio Power Amplifier IC 4W + 4W Overview The STK4- series products are audio power amplifier hybrid ICs that consist of optimally-designed
More informationLA4631. SANYO Semiconductors DATA SHEET. Overview. Functions and Applications Two-channel power amplifier for audio applications
Ordering number : ENN81 SANYO Semiconductors DATA SHEET LA61 Overview The LA61 ( W channels) is a single-ended power IC that has a pin arrangement similar to the LA6 BTL power IC (1 W channels). The LA61's
More information2SB1203/2SD1803. Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 SANYO Semiconductors DATA SHEET SB/SD8 Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter
More informationLA7161V. VHF Band RF Modulator
Ordering number : EN6081 Monolithic Linear IC VHF Band RF Modulator Overview The is an RF modulator which generates, from a baseband video and audio signal, PLL frequency synthesized RF TV channel signal
More informationLA6510. Ratings Parameter Symbol Conditions
Ordering number : EN2624E LA6510 Monolithic Linear IC Dual Power Operational Amplifier Overview The LA6510 is a dual power operational amplifier IC capable of delivering larger output currents than conventional
More information500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
More information(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
More informationLA Overview LA42052 is 5W 2-channel AF power amplifier intended for televisions.
Ordering number : ENA0314 Monolithic Linear IC Audio Output for TV application 5W 2ch Power Amplifier Overview is 5W 2-channel AF power amplifier intended for televisions. Functions 5W 2 channels ( = 18V,
More informationPower management (dual transistors)
Power management (dual transistors) 2SA208 and DTC44EE are housed independently in a UMT package. Application Power management circuit Dimensions (Units : mm) UMT6 Features ) Power switching circuit in
More information2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter
Ordering number : EN188C SA1418/SC648 Bipolar Transistor ( )16V, ( ).A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT
More informationNew Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4
General purpose transistor (isolated transistor and diode) A 2SB7 and a RB46F are housed independently in a TSMT5 package. Applications DC / DC converter Motor driver Features ) Tr : Low CE(sat) Di : Low
More informationLA Overview. Monolithic Linear IC 5W 2-Channel AF Power Amplifier With DC Volume Control
Ordering number : ENA0078 LA42352 Monolithic Linear IC 5W 2-Channel AF Power Amplifier With DC Volume Control Overview LA42352 is 5W 2-channel AF power amplifier with DC volume control intended for televisions.
More informationunit: mm 4148 Period = 100 ms, duty 1% V CC 2 = 5.0 V
Ordering number : EN4874 Thick Film Hybrid IC STK6877 Reversible Brush-Type DC Motor Driver (output current: 8 A) Overview The STK6877 is an H bridge power pack reversible brushtype DC motor driver that
More informationunit: mm 3024A-SIP10H
Ordering number: ENN96 Monolithic Linear IC LA4 1 W -Channel Power Amplifier Overview The LA4 is a 1 W -channel power amplifier intended for televisions. This IC has a series of pin compatible monaural
More informationParameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V
Main Product Characteristics: V DSS 20V R DS (on) 0.4Ω (typ.) I D 0.54A Features and Benefits: SOT-363 Marking and Pin Assignment Schematic Diagram Advanced MOSFET process technology Special designed for
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering
More informationGeneral purpose transistor (dual transistors)
General purpose transistor (dual transistors) Features 1) Both a SA37AK chip and SC41K chip in a EMT or UMT or SMT package. ) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)
More informationLA4805V. 3 V Stereo Headphone Power Amplifier
Ordering number : EN4469A Monolithic Linear IC LA4805V 3 V Stereo Headphone Power Amplifier Overview The LA4805V is a power IC developed for use in stereo headphones. It includes low frequency enhancement,
More informationLA4902 参考資料. Specifications. Monolithic Linear IC Audio Output for TV application 10W BTL Monaural Power Amplifier IC. Maximum Ratings at Ta = 25 C
Ordering number : ENA032 LA4902 Monolithic Linear IC Audio Output for TV application 0W BTL Monaural Power Amplifier IC Overview The LA4902 is a high-efficiency monaural BTL power amplifier. The LA4902
More information2SK4124. SANYO Semiconductors DATA SHEET 2SK4124. Features. Specifications. N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Ordering number : ENA46 SK414 SANYO Semiconductors DATA SHEET SK414 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed
More informationSOT-23. Symbol Characterizes Typ. Max. Units R θja Junction-to-ambient (t 10s) C /W
Main Product Characteristics: V DSS -20V D R DS (on) 60mΩ (typ.) G I D -3A 1 SOT-23 Marking and pin Assignment S Schematic diagram Features and Benefits: Advanced MOSFET process technology Special designed
More informationMedium Power Transistor ( 32V, 1A)
Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon
More informationDimensions (Unit : mm) 2SB EIAJ : SC-62 (3) Emitter Abbreviated symbol: BA
Medium Power Transistor ( 32, 1A) / 2SA1515S / Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions
More information(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching
Ordering number : EN8A SA169/SC61 Bipolar Transistor (-)V, (-)1A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT
More informationLA W 2-Channel AF Power Amplifier
Ordering number:enn1164c Monolithic Linear IC LA4500 5.3W 2-Channel AF Power Amplifier Features Low idling current (20mA/2 channels) enabling prolonged battery life. Less dependence of idling current on
More informationOverview The LA6560 is a 5-channel driver (BTL : 4-channel, H bridge : 1-channel) for CD players.
Ordering number : ENA0599 LA6560 Overview The LA6560 is a 5-channel driver (BTL : 4-channel, H bridge : -channel) for CD players. Functions Power amplifier 5-channel built-in. (Bridge-connection (BTL)
More informationHigh power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment
NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS (ON) voltages as low as 4.5V., low gate charge and operation with gate G D General
More information(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN69D SA16/SC69 Bipolar Transistor (-)V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of
More informationLA1145, 1145M. FM IF System (Quadrature Detector) for Car Radio. Package Dimensions. Features
Ordering number: ENN 2725B Monolithic Linear IC LA1145, 1145M FM IF System (Quadrature Detector) for Car Radio Features 1. On-chip IF count buffer circuit and microprocessorcontrolled switch circuit for
More informationGeneral purpose(dual transistors)
General purpose(dual transistors) FMY FMY Features ) Both the SA4K and SC3906K chips in an SMT package. ) PNP and NPN chips are connecter in a common emitter. External dimensions (Unit : mm) SMT.9..9 0.9
More informationMaintenance/ Discontinued
Small Signal Transistor Arrays UNA225 (UN225) Silicon PNP epitaxial planar type (4 elements) Silicon NPN epitaxial planar type (4 elements) For motor drives Features Small and lightweight Low power consumption
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 30P12 NCE30P12S SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low
More informationUNISONIC TECHNOLOGIES CO., LTD 2SC5569
UNISONIC TECHNOLOGIES CO., LTD SC69 DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation.
More informationNPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / Features 1) BCEO > 4 (IC=mA) 2) Complements the UMT297A / SST297A / MMST297A. Package, marking, and packaging
More informationMedium Power Transistor ( 32V, 1A)
Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon
More informationRelay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general high-current
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 30P25 NCE30P25S SOP-8 Ø330mm 12mm 2500 units
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or power
More informationDevice Marking Device Device Package Reel Size Tape width Quantity HM4812 HM4812 SOP-8 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit
Dual N-Channel Enhancement Mode Power MOSFET Description The HM4812 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.this device is suitable for use as a load switch and
More informationLow collector-to-emitter saturation voltage Large current capacity and wide ASO
Ordering number : EN1F SB11/SD16 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features
More informationNCE6012AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationMidium Power Transistors (±50V / ±3A)
Midium Power Transistors (±50V / ±3A) MP6Z3 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features ) Low saturation voltage, typically V CE (sat) = 0.35V (Max.)
More informationXN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Composite Transistors. For switching/digital circuits
Composite Transistors XN (XN) Silicon NPN epitaxial planar type (Tr) Silicon PNP epitaxial planar type (Tr) For switching/digital circuits Features Two elements incorporated into one package (Transistors
More information2SB648, 2SB648A. Silicon PNP Epitaxial. Low frequency high voltage amplifier complementary pair with 2SD668/A
Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = C) Ratings
More informationDevice Marking Device Device Package Reel Size Tape width Quantity HM4485B HM4485B SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit
P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or in PWM applications. General
More informationBattery protection Load switch Power management SOT23-6L top view
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge.this device is suitable for use as
More informationUNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: Cob = 2.5 pf (typ.) High Transition
More informationHigh power and current handing capability Lead free product is acquired Surface mount package SOT-23-6L top view
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted
More information2SA1834 V CEO -20V I C -10A. Datasheet. PNP -10A -20V Middle Power Transistor. Outline. Parameter Value CPT3. Features
PNP -10A -20V Middle Power Transistor Datasheet Outline Features Parameter Value CPT3 V CEO -20V I C -10A 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5001 3) Low V CE(sat) V CE(sat)
More informationLow collector-to-emitter saturation voltage Fast switching speed
Ordering number : EN19B SB114/SD164 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 8205A HM8205A TSSOP-8 Ø330mm 12mm 3000 units. Parameter Symbol Limit Unit
Dual N-Channel Enhancement Mode Power MOSFET Description The HM8205A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This
More informationLow V CE(sat) transistor (strobe flash)
Low CE(sat) transistor (strobe flash) SD8 Features ) Low CE(sat). CE(sat) = (Typ.) (IC/IB = 4A / 0.A) ) Excellent DC current gain characteristics. 3) Complements the SB4. Dimensions (Unit : mm) SD8 Structure
More informationPower management (dual transistors)
Power management (dual transistors) SC8 and SK39 are housed independently in a UMT package. Application Power management circuit Dimensions (Units : mm) Features ) Power switching circuit in a single package.
More informationNCE0208IA. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationNCE40P13S. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationNPN General Purpose Transistor
NPN General Purpose Transistor!Features 1) BCEO > 4 (IC = 1mA) 2) Complements the UMT39 / SST39 / MMST39 / 2N39.!External dimensions (Units : mm) UMT394 ROHM : UMT3 EIAJ : SC7 2.±.2 1.3±.1...3 1.2±.1 2.1±.1.9±.1.2.7±.1.1±.
More informationMedium Power Transistor (32V, 1A)
Medium Power Transistor (3, A) SD664 / SD88 Features ) Low CE(sat) =.(Typ.) (lc / lb = ma / ma) ) Compliments SB3 / SB37 Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 4..3
More informationPower switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment
Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity HM5P55R HM5P55R SOT-223 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit
P-Channel Enhancement Mode Power MOSFET Description The HM5P55R uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationSTK ch AF Power Amplifier (Split Power Supply) (70W + 70W min, THD = 0.4%)
Ordering numr:enn4610a Thick Film Hybrid IC STK42112 2ch AF Power Amplifier (Split Power Supply) (70W + 70W min, THD = 0.4%) Feures Muting circuit built-in isole all types of shock Current mirror circuit
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP4085EG NCEP4085EG DFN5X6-8L - - -
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationDFN3X3-8 Pin Configuration. Units Symbol. Parameter
General Description Product Summery Description The WSD20L75DN uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationUNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays
Small Signal Transistor Arrays UNA26 (UN26) This product complies with the RoHS Directive (EU 22/95/EC). Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE82H110D NCE82H110D TO-263-2L - - -
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationTO-252 (DPAK) Symbol Parameter Max. Units I TC = 25 C Continuous Drain Current, V -10V 1-30 I DM Pulsed Drain Current 2-120
Main Product Characteristics: V DSS -100V R DS (on) 36mΩ (typ.) G D I D -30A S Features and Benefits: TO-252 (DPAK) Marking and pin Assignment Schematic diagram Advanced MOSFET process technology Special
More information2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications
Ordering number : EN18B SD18 Bipolar Transistor V, A, Low VCE(sat), NPN Single NP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption
More informationNCE40P06J. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
Pb Free Product http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate
More informationNCE3415Y. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low
More informationMCH5541 PNP/NPN Bipolar Transistor ( )30V, ( )700mA, VCE(sat) ; ( 220)190mV (max)
MCH41 PNP/NPN Bipolar Transistor ( )V, ( )ma, VCE(sat) ; ( )19mV (max) Overview MCH41 is ( )V, ( )ma, VCE(sat) ; ( )19mV (max), PNP/NPN in 1 type MCPH, Bipolar Transistor. Electrical Connection Features
More informationNCE0203S. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationNPN General Purpose Transistor
UMT39 / SST39 / MMST39 Transistors NPN General Purpose Transistor UMT39 / SST39 / MMST39 Features 1) BCEO > (IC = 1mA) 2) Complements the UMT39 / SST39 / MMST39. Dimensions (Unit : mm) UMT39 ROHM : UMT3
More informationNCE6005AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6003 NCE6003Y SOT-23-3L Ø180mm 8 mm 3000 units
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low
More informationWSR70P10. Absolute Maximum Ratings. BV DSS R DSON I D -100V 18mΩ -70A. Dec General Description. Product Summery.
WSR7P General Description The WSR7P is the highest performance trench with extreme high cell density, which provide excellent R DSON and gate charge for most of the small power switching and load switch
More informationSS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector
More informationDevice Marking Device Device Package Reel Size Tape width Quantity A2SHB HM2302A SOT-23 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE6990 NCE6990 TO unless otherwise noted)
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More information