2SB648, 2SB648A. Silicon PNP Epitaxial. Low frequency high voltage amplifier complementary pair with 2SD668/A

Transcription

1 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = C) Ratings Item Symbol 2SB648 2SB648A Unit Collector to base voltage V CBO V Collector to emitter voltage V CEO V Emitter to base voltage V EBO 5 5 V Collector current I C ma Collector peak current I C(peak) ma Collector power dissipation P C 1 1 W Junction temperature Tj C Storage temperature Tstg 55 to to +150 C

2 Electrical Characteristics (Ta = C) 2SB648 2SB648A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO V I C = 10 µa, I E = 0 Collector to emitter breakdown voltage Emitter to base breakdown voltage V (BR)CEO V I C = 1 ma, R BE = V (BR)EBO 5 5 V I E = 10 µa, I C = 0 Collector cutoff current I CBO µa V CB = 160 V, I E = 0 DC current transfer ratio Collector to emitter saturation voltage h FE1 * V CE = 5 V, I C = 10 ma h FE V CE = 5 V, I C = 1 ma V CE(sat) 2 2 V I C = 30 ma, I B = 3 ma Base to emitter voltage V BE V V CE = 5 V, I C = 10 ma Gain bandwidth product f T MHz V CE = 10 V, I C = 10 ma Collector output capacitance Note: Cob pf V CB = 10 V, I E = 0, f = 1 MHz 1. The 2SB648 and 2SB648A are grouped by h FE1 as follows. B C D 2SB to to to 320 2SB648A 60 to to 200 2

3 Collector power dissipation P C (W) Maximum Collector Dissipation Curve Ambient temperature Ta ( C) Collector current I C (ma) Typical Output Characteristics µa I B = Collector to emitter Voltage V CE (V) Collector Current I C (ma) Typical Transfer Characteristics V CE = 5 V Ta = 75 C DC current transfer ratio h FE DC Current Transfer Ratio vs. Collector Current V CE = 5 V Ta = 75 C Base to emitter voltage V BE (V) Collector Current I C (ma) 3

4 Base to emitter saturation voltage V BE(sat) (V) Saturation Voltage vs. Collector Current I C = 10 I B V BE(sat) Ta = C Ta = C V CE(sat) Collector Current I C (ma) Collector to emitter saturation voltage V CE(sat) (V) Gain bandwidth product f T (MHz) V CE = 10 V Gain Bandwidth Product vs. Collector Current Colletor current I C (ma) Collector output capacitance C ob (pf) Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz I E = Collector to base voltage V CB (V) 4

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