2SJ553(L), 2SJ553(S)

Transcription

1 SJ553(L), 2SJ553(S) Silicon P Channel MOS FET High Speed Power Switching ADE B (Z) 3rd. Edition Jul Features Low on-resistance R DS(on) = 0.028Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline LDPAK 4 4 D G S Gate 2. Drain 3. Source 4. Drain

2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage V DSS 60 V Gate to source voltage V GSS ±20 V Drain current I D 30 A Drain peak current Note1 I D(pulse) 120 A Body-drain diode reverse drain current I DR 30 A Avalanche current Avalanche energy I AP Note3 E AR Note3 30 A 77 mj Channel dissipation Pch Note2 75 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. PW 10µs, duty cycle 1 % 2. Value at Tc = 25 C 3. Value at Tch = 25 C, Rg 50 Ω 2

3 Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 V I D = 10mA, V GS = 0 Gate to source breakdown voltage V (BR)GSS ±20 V I G = ±100µA, V DS = 0 Zero gate voltege drain current I DSS 10 µa V DS = 60 V, V GS = 0 Gate to source leak current I GSS ±10 µa V GS = ±16V, V DS = 0 Gate to source cutoff voltage V GS(off) V I D = 1mA, V DS = 10V Static drain to source on state R DS(on) Ω I D = 15A, V GS = 10V Note4 resistance R DS(on) Ω I D = 15A, V GS = 4V Note4 Forward transfer admittance y fs S I D = 15A, V DS = 10V Note4 Input capacitance Ciss 2500 pf V DS = 10V Output capacitance Coss 1300 pf V GS = 0 Reverse transfer capacitance Crss 300 pf f = 1MHz Turn-on delay time t d(on) 25 ns V GS = 10V, I D = 15A Rise time t r 150 ns R L = 2Ω Turn-off delay time t d(off) 350 ns Fall time t f 220 ns Body drain diode forward voltage V DF 0.95 V I F = 30A, V GS = 0 Body drain diode reverse recovery time Note: 4. Pulse test t rr 100 ns I F = 30A, V GS = 0 dif/ dt =50A/µs 3

4 Main Characteristics 80 Power vs. Temperature Derating 1000 Maximum Safe Operation Area Channel Dissipation Pch (W) Case Temperature Tc ( C) Drain Current I D (A) PW = 10 ms (1 shot) Ta = 25 C ms DC Operation (Tc = 25 C) Operation in this area is limited by R DS(on) 100 µs 10 µs Drain to Source Voltage V (V) DS 100 Drain Current I D (A) Typical Output Characteristics 8 V 5 V 4 V V GS = 10 V 3.5 V 3 V V 2 V Drain Current I D (A) Drain to Source Voltage V DS(V) Gate to Source Voltage V GS (V) Typical Transfer Characteristics V DS = 10 V Tc = 75 C 25 C -25 C 4

5 Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage A I = 50 A D 20 A Gate to Source Voltage V GS (V) Drain to Source On State Resistance R DS(on) ( W ) Static Drain to Source on State Resistance vs. Drain Current 1 V GS = 4 V 10 V Drain Current I (A) D Static Drain to Source on State Resistance R DS(on) ( W ) Static Drain to Source on State Resistance vs. Temperature V GS I D = 50 A = 4 V V GS = 10 V 20 A 10 A 50 A 10, 20A Case Temperature Tc ( C) Forward Transfer Admittance y fs (S) Forward Transfer Admittance vs. Drain Current Tc = 25 C 75 C 25 C 0.3 V DS = 10 V Drain Current I D (A) 5

6 Reverse Recovery Time trr (ns) Body Drain Diode Reverse Recovery Time Capacitance C (pf) di / dt = 50 A / µs 30 V GS = 0, Ta = 25 C Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Typical Capacitance vs. Drain to Source Voltage 3000 Ciss V GS = 0 f = 1 MHz Coss Crss Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DD = 10 V V DS 25 V 50 V I D = 30 A V GS V DD = 10 V 25 V 50 V Gate Charge Qg (nc) Gate to Source Voltage V GS (V) Switching Time t (ns) Switching Characteristics t d(off) t f t r t d(on) 20 V GS = 10 V, V DD = 30 V 10 PW = 5 µs, duty < = 1 % Drain Current I D (A) 6

7 Reverse Drain Current I DR (A) Reverse Drain Current vs. Source to Drain Voltage 10 V 5 V V = 0 GS Source to Drain Voltage V (V) SD Repetitive Avalanche Energy E AR (mj) Maximum Avalanche Energy vs. Channel Temperature Derating I AP = 30 A V DD = 25 V duty < 0.1 % Rg > 50 W Channel Temperature Tch ( C) Vin 15 V Avalanche Test Circuit VDS Monitor Rg 50W L I AP Monitor D. U. T Avalanche Waveform 1 V 2 DSS E AR = L I AP 2 V DSS VDD V (BR)DSS I AP VDD V DS I D VDD 0 7

8 Normalized Transient Thermao Impedance g s (t) D = shot pulse Normalized Transient Thermal Impedance vs. Pulse Width q ch c(t) = g s (t) q ch c qch c = 1.67 C/W, Tc = 25 C µ 100 µ 1 m 10 m 100 m 1 10 Pulse Width PW (S) PDM PW T Tc = 25 C D = PW T Switching Time Test Circuit Waveform Vin Monitor D.U.T. R L Vout Monitor Vin 10% 90% Vin -10 V 50W VDD = 30 V 90% 90% Vout 10% 10% td(on) tr td(off) t f 8

9 Package Dimensions As of January, 2001 Unit: mm 10.2 ± 0.3 (1.4) 4.44 ± ± ± ± ± ± ± ± ± ± ± ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) 1.4 g 9

10 As of January, 2001 Unit: mm 10.2 ± 0.3 (1.4) 4.44 ± ± (1.5) 8.6 ± (1.5) ± ± ± ± ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(1) 1.3 g 10

11 As of January, 2001 Unit: mm 10.2 ± 0.3 (1.4) 4.44 ± ± (1.5) 8.6 ± (1.5) ± ± ± ± ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) 1.35 g 11

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