2SK2554. Silicon N-Channel MOS FET. November Application. Features. Outline. High speed power switching

Transcription

1 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance R DS(on) = 4.5 mω typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 3 S 1. Gate. Drain (Flange) 3. Source

2 Absolute Maximum Ratings (Ta = 5 C) Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage V GSS ± V Drain current I D 75 A Drain peak current I D(pulse) * 1 3 A Body to drain diode reverse drain current I DR * 75 A Avalanche current I AP * 3 5 A Avalanche energy E AR * 3 14 mj Channel dissipation Pch* 15 W Channel temperature Tch 15 C Storage temperature Tstg 55 to +15 C Notes 1. PW 1 µs, duty cycle 1 %. Value at Tc = 5 C 3. Value at Tch = 5 C, Rg 5 Ω

3 Electrical Characteristics (Ta = 5 C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V (BR)DSS 6 V I D = 1 ma, V GS = voltage Gate to source breakdown voltage V (BR)GSS ± V I G = ± µa, V DS = Gate to source leak current I GSS ±1 µa V GS = ±16 V, V DS = Zero gate voltage drain current I DSS µa V DS = 6 V, V GS = Gate to source cutoff voltage V GS(off) 1.. V I D = 1 ma, V DS = 1 V Static drain to source on state resistance R DS(on) mω I D = 4 A V GS = 1 V* mω I D = 4 A V GS = 4 V* 1 Forward transfer admittance y fs 5 8 S I D = 4 A V DS = 1 V* 1 Input capacitance Ciss 77 pf V DS = 1 V Output capacitance Coss 4 pf V GS = Reverse transfer capacitance Crss 76 pf f = 1 MHz Turn-on delay time t d(on) 6 ns I D = 4 A Rise time t r 4 ns V GS = 1 V Turn-off delay time t d(off) 1 ns R L =.75 Ω Fall time t f 9 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. V DF.95 V I F = 75 A, V GS = t rr 15 ns I F = 75 A, V GS = dif / dt = 5 A / µs 3

4 Power vs. Temperature Derating Channel Dissipation Pch (W) Case Temperature Tc ( C) Maximum Safe Operation Area Operation in this area is limited by R DS(on) 1 ms 1 µs µs PW = 1 ms (1shot) DC Operation (Tc = 5 C) 1.5 Ta = 5 C Drain to Source Voltage V DS (V) Typical Output Characteristics 1 V 5 V 4 V 3 V V V GS = V Drain to Source Voltage V DS (V) 4

5 Typical Transfer Characteristics V DS = 1 V Tc = 75 C 5 C 5 C Gate to Source Voltage V GS (V) Drain to Source Voltage V DS(on) (V) Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage vs. Gate to Source Voltage I D = 5 A A 1 A Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current V GS = 4 V 1 V

6 Static Drain to Source on State Resistance R DS(on) ( Ω ) Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature V GS = 4 V 1 V I D = 5 A 1, A 1,, 5 A Case Temperature Tc ( C) Forward Transfer Admittance vs. Drain Current V DS = 1 V Tc = 5 C 75 C 5 C Body to Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 5 1 di / dt = 5 A / µs 5 V GS =, Ta = 5 C Reverse Drain Current I DR (A) 6

7 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pf) Drain to Source Voltage V DS (V) 3 3 Ciss Coss Crss 3 V GS = f = 1 MHz Drain to Source Voltage V DS (V) Dynamic Input Characteristics I D = 75 A 8 6 V DS 4 V DD = 1 V 5 V 5 V V GS V 4 DD = 5 V 5 V 1 V Gate Charge Qg (nc) Gate to Source Voltage V GS (V) Switching Characteristics Switching Time t (ns) 3 3 t r t d(off) 3 V GS = 1 V, V DD = 3 V PW = 5 µs, duty < 1 % t f t d(on) 7

8 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) V 5 V V GS =, 5 V Source to Drain Voltage V SD (V) Repetive Avalanche Energy E AR (mj) Maximun Avalanche Energy vs. Channel Temperature Derating I AP = 5 A V DD = 5 V duty <.1 % Rg > 5 Ω Channel Temperature Tch ( C) 3 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) D = shot pulse.1 1 µ µ 1 m 1 m Pulse Width θ ch c(t) = γ s (t) θ ch c θch c =.83 C/W, Tc = 5 C PDM PW T Tc = 5 C D = PW T m 1 1 PW (S) 8

9 Avalanche Test Circuit and Waveform VDS Monitor Rg L IAP Monitor D. U. T VDD 1 E AR = L I AP I AP VDSS V DSS VDD V (BR)DSS V DS Vin 15 V 5Ω I D VDD Switching Time Test Circuit Waveform Vin Monitor Vin 1 V 5Ω D.U.T. R L Vout Monitor VDD = 3 V Vin Vout 1% 1% 9% 1% 9% 9% td(on) tr td(off) t f 9

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