2SK1056, 2SK1057, 2SK1058

Transcription

1 SK, SK7, SK8 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with SJ1, SJ11 and SJ1 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier

2 SK, SK7, SK8 Outline TO-3P D G 1 3 S 1. Gate. Source (Flange) 3. Drain Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage SK V DSX V SK7 1 SK8 1 Gate to source voltage V GSS ±1 V Drain current I D 7 A Body to drain diode reverse drain current I DR 7 A Channel dissipation Pch* 1 W Channel temperature Tch 1 C Storage temperature Tstg to +1 C Note: 1. Value at T C = C

3 SK, SK7, SK8 Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Drain to source SK V (BR)DSX V I D = ma, V GS = V breakdown voltage SK7 1 SK8 1 Gate to source breakdown voltage V (BR)GSS ±1 V I G = ± µa, V DS = Gate to source cutoff voltage V GS(off).1 1. V I D = ma, V DS = V Drain to source saturation voltage V DS(sat) 1 V I D = 7 A, V GD = * 1 Forward transfer admittance yfs.7 1. S I D = 3 A, V DS = V * 1 Input capacitance Ciss pf V GS = V, V DS = V, Output capacitance Coss 3 pf f = 1 MHz Reverse transfer capacitance Crss pf Turn-on time t on 18 ns V DD = V, I D = A, Turn-off time t off ns Note: 1. Pulse test 3

4 SK, SK7, SK8 Channel Dissipation Pch (W) 1 Power vs. Temperature Derating Case Temperature T C ( C) 1 Maximum Safe Operation Area I D max (Continuous) PW = ms 1 shot DC Operation (T C = C) PW = ms 1 shot PW = 1 s 1 shot Ta = C. SK SK7 SK8. Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 8 V GS = V T C = C Pch = W 1 3 Drain to Source Voltage V DS (V) V DS = V T C = C Gate to Source Voltage V GS (V)

5 SK, SK7, SK8 Drain to Source Saturation Voltage V DS (on) (V) V GD = Drain to Source Saturation Voltage vs. Drain Current C 7 C T C = C.. Drain to Source Voltage V DS (V) 8 Drain to Source Voltage vs. Gate to Source Voltage T C = C A A I D = 1 A 8 Gate to Source Voltage V GS (V) Input Capacitance Ciss (pf) Input Capacitance vs. Gate Source Voltage V DS = V f = 1 MHz 8 Gate to Source Voltage V GS (V) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Frequency T C = C V DS = V I D = A.3 k 3 k k 3 k 1 M 3 M M Frequency f (Hz)

6 SK, SK7, SK8 Switching Time vs. Drain Current Switching Time ton,toff (ns) t on t off.1.. Switching Time Test Circuit Output R L = Ω Input PW = µs duty ratio = 1 % Ω V Input Waveforms 9 % % t on t off Output % 9 %

7 SK, SK7, SK8 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user s unit according to this document.. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein.. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd.. MEDICAL APPLICATIONS: Hitachi s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., --, Ohte-machi, Chiyoda-ku, Tokyo, Japan Tel: Tokyo (3) Fax: (3) 37-9 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. Sierra Point Parkway Brisbane, CA U S A Tel: Fax: Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-8 Feldkirchen München Tel: Fax: Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL 8YA United Kingdom Tel: 8-8 Fax: Hitachi Asia Pte. Ltd. 1 Collyer Quay #- Hitachi Tower Singapore Tel: 3- Fax: Hitachi Asia (Hong Kong) Ltd. Unit 7, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: Fax: