Silicon Junction Field-Effect Transistors
|
|
- Barrie Adam Bryan
- 5 years ago
- Views:
Transcription
1 0/99 D- Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors SK SK5 SK6 SJ44 Japanese IFN IFN5 IFN6 IFP44 InterFET NJ NJL NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V Min na ( 0 V) ( 0 V) ( 0 V) (0 V) Max 0./ 0 0.5/.0 0./. 0./.5 V (0 V) ( 0 V) (0 V) ( 0 V) Min/Max 5.0/50 5.0/0 5.0/0.0/8 ma (0 V) (0 V) (0 V) ( 0 V) Min/Max ms (0 V) (0 V) (0 V) ( 0 V) Typ pf (Ø) (0 V) (Ø) (0 V) (Ø) (0 V) (Ø) ( 0 V) Typ pf (Ø) (5 V) (Ø) (0 V) (Ø) (0 V) (Ø) ( 0 V) Typ BV GSS I GSS V GS(off) TO-8 TO-8 TO-8 TO-8 Package Configuration I DSS SDG SDG DGS DGS Pin Configuration g fs C iss C rss (97) FAX (97) 76-75
2 0/99 D-5 IFN46 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Japanese SK46 Absolute maximum ratings at T A = 5 C Reverse Gate Source & Reverse Gate Drain Voltage 40 V Continuous Forward Gate Current 0 ma Continuous Device Power Dissipation 75 mw Power Derating mw/ C Storage Temperature Range 65 C to 00 C At 5 C free air temperature: IFN46 Process NJ450 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS 40 V I G = µa, V DS = ØV na V GS = 0V, V DS = ØV Gate Reverse Current I GSS µa V GS = 0V, V DS = ØV T A = 50 C Gate Source Cutoff Voltage V GS(OFF) 0.. V V DS = 0V, I D = µa Drain Saturation Current (Pulsed) I DSS 0 ma V DS = 0V, V GS = ØV Dynamic Electrical Characteristics Common Source Forward Transconductance g fs 0 40 ms V DS = 0V, V GS = ØV I DSS = 5 ma Common Source Input Capacitance C iss 75 pf V DS = 0V, V GS = ØV Common Source Reverse Transfer Capacitance C rss 5 pf V DS = 0V, I D = ØA Noise Figure NF db V DS = 0V, I D = 5 ma R G = 00Ω Differential Gate Source Voltage V GS V GS 0 mv V DS = 0V, I D = 5 ma TOÐ7 Package Pin Configuration Source, Gate, Drain, 5 Source, 6 Gate, 7 Drain (97) FAX (97) 76-75
3 D-6 0/99 IFN47 N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Japanese SK47 Absolute maximum ratings at T A = 5 C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 40 V 0 ma 00 mw.4 mw/ C At 5 C free air temperature: IFN47 Process NJ450 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS 40 V I G = µa, V DS = ØV na V GS = 0V, V DS = ØV Gate Reverse Current I GSS µa V GS = 0V, V DS = ØV T A = 50 C Gate Source Cutoff Voltage V GS(OFF) 0.. V V DS = 0V, I D = µa Drain Saturation Current (Pulsed) I DSS 5 0 ma V DS = 0V, V GS = ØV Dynamic Electrical Characteristics Common Source Forward Transconductance g fs 0 40 ms V DS = 0V, V GS = ØV I DSS = 5 ma Common Source Input Capacitance C iss 75 pf V DS = 0V, V GS = ØV Common Source Reverse Transfer Capacitance C rss 5 pf V DS = 0V, I D = Ø f = Hz Noise Figure NF db V DS = 0V, I D = 5 ma 0 db R G = 00Ω f = 00 Hz TOÐ8 Package Pin Configuration Source, Gate & Case, Drain
4 G- 0/99 TO-8 Package 0.0 (5.) 0.95 (4.95) 0.78 (4.5) Leads (.54) - Typ (.) 0.08 (0.7) 0.00 (0.76) Max (9.05) Max (.70) Min (.7) 0.06 (0.9) TO-9 Package Alternate (Preferred) version cap height = Max 0.85 (4.70), Min 0.65 (4.9) 0.70 (9.40) 0.50 (8.89) 0.5 (8.5) 0.5 (8.00) 0.60 (6.60) 0.40 (6.0) 0.5 (.8) Max (0.) Min (9.05) Max (.70) Min Leads (5.4) 0.90 (4.8) (.4) 0.09 (0.74) 0.04 (0.86) 0.08 (0.7)
5 G-4 0/99 TO-7 Package 0.0 (5.4) 0.95 (4.96) 0.75 (4.44) 0.00 (0.76) Max (9.05) Max (.70) Min 6 Leads (0.48) 0.06 (0.406) 0.00 (.54) - Typ (.) 0.08 (0.7) (.7) 0.06 (0.9) TO-7 Package 0.0 (5.) 0.95 (4.95) 0.78 (4.5) 4 Leads (.54) - Typ (.) 0.08 (0.7) 0.00 (0.76) Max (9.05) Max (.70) Min (.7) 0.06 (0.9)
Silicon Junction Field-Effect Transistors
D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Unit N N N N Parameters
More information2N3819. N-Channel JFET. Vishay Siliconix. V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma)
N9 N-Channel JFET V GS(off) (V) V (BR)GSS Min (V) g fs Min I DSS Min (ma) 5 Excellent High-Frequency Gain: Gps db @ MHz Very Low Noise: db @ MHz Very Low Distortion High ac/dc Switch Off-Isolation High
More informationMatched N-Channel JFET Pairs
U/ Matched N-Channel JFET Pairs Part Number V GS(off) (V) V (BR)GSS Min (V) Min I G Typ (pa) V GS V GS Max (mv) U to 5.5 U to 5.5 Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage:
More informationMatched N-Channel JFET Pairs
N59/59 Matched N-Channel JFET Pairs Part Number V GS(off) (V) V (BR)GSS Min (V) Min I G Typ (pa) V GS V GS Max (mv) N59 to 5 5 5 N59 to 5 5 5 5 Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low
More informationMatched N-Channel JFET Pairs
Matched N-Channel JFET Pairs N// Part Number V GS(off) (V) V (BR)GSS Min (V) Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate
More information2N/PN/SST4391 Series. N-Channel JFETs. Vishay Siliconix 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393
2N/PN/SST49 Series N-Channel JFETs 2N49 PN49 SST49 2N492 PN492 SST492 2N49 PN49 SST49 Part Number GS(off) () r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) 2N/PN/SST49 4 to 5 4 2N/PN/SST492 2 to 5 6
More informationJ/SST/U308 Series. N-Channel JFETs. Vishay Siliconix J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS
J/SST/U8 Series N-Channel JFETs J8 SST8 U9 J9 SST9 U J SST PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma) J8 to.5 25 8 J9 to 25 J 2 to.5 25 8 2 SST8 to.5 25 8
More information2N4416/2N4416A/SST4416. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION
N-Channel JFETs N/NA/SST PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I DSS Min (ma) N. NA. to. SST. FEATURES BENEFITS APPLICATIONS Excellent High-Frequency Gain: N/A, Gps db (typ)
More information2N/PN/SST4117A Series. N-Channel JFETs. Vishay Siliconix 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY
N/PN/SST7A Series N-Channel JFETs N7A PN7A SST7 N8A PN8A SST8 N9A PN9A SST9 PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min ( S) I DSS Min ( A) 7.6 to.8 7 8 to 8 8 9 to 6 FEATURES
More informationU290/291. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION ABSOLUTE MAXIMUM RATINGS
U9/9 N-Channel JFETs PRODUCT SUMMARY Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) U9. to 3 U9.5 to.5 7 FEATURES BENEFITS APPLICATIONS Low On-Resistance: U9 < 3 Fast Switching
More informationU to SST/U to SST/U to Features Benefits Applications
SST/U Series Monolithic N-Channel JFET Duals Product Summary SST SST U U U Part Number GS(off) () (BR)GSS Min () Min (ms) I G Typ (pa) GS GS Max (m) U. to. SST/U. to. SST/U. to. Features Benefits Applications
More informationMatched N-Channel JFET Pairs
U/ Matched N-Channel JFET Pairs Part Number V GS(off) (V) V (BR)GSS Min (V) Min I G Typ (pa) V GS V GS Max (mv) U to 5.5 U to 5.5 Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage:
More informationMatched N-Channel JFET Pairs
U/ Matched N-Channel JFET Pairs Part Number V GS(off) (V) V (BR)GSS Min (V) Min I G Typ (pa) V GS V GS Max (mv) U to 5.5 U to 5.5 Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage:
More informationTOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370. V DS = 10 V, V GS = 0, f = 1 khz, I DSS = 3 ma
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. High Yfs : Yfs
More informationUNISONIC TECHNOLOGIES CO., LTD UT3N01Z
UNISONIC TECHNOLOGIES CO., LTD UT3N1Z N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N1Z uses UTC advanced technology to provide excellent R DS(ON), low gate
More informationTOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High Y fs : Y fs =
More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. G S D 2N5457 2N5458 2N5459 TO-92 This device is a low level audio amplifier
More informationDATA SHEET. J111; J112; J113 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors File under Discrete Semiconductors, SC07 July 1993 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 2NNPP06 is a complementary enhancement mode MOSFET H-BRIDGE, it uses
More information2SK363 2SK363. For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications Unit: mm High breakdown voltage: VGDS = 40 V High
More informationCMT2N7002DWX* SMALL SIGNAL MOSFET GENERAL DESCRIPTION PIN CONFIGURATION ORDERING INFORMATION ABSOLUTE MAXIMUM RATINGS. S N-Channel MOSFET
GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J J TO-92 MMBFJ MMBFJ G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier,
More informationUNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationHFP4N65F / HFS4N65F 650V N-Channel MOSFET
HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationUNISONIC TECHNOLOGIES CO., LTD 2N7002K
UNISONIC TECHNOLOGIES CO., LTD 2N7002K 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent R DS(ON), low gate charge and low gate voltages
More informationU/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET
Linear Integrated Systems U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN G pg = 11.5dB LOW HIGH FREQUENCY
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
More informationACE2305B. P-Channel Enhancement Mode Field Effect Transistor. Description
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
More informationTOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications Unit: mm Including two devices in SM5 (super mini type with 5 leads.) High Y fs : Y fs =
More informationJ109 / MMBFJ108 N-Channel Switch
J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92
More informationBSS123W. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary V DS I D R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =4.5V) 100V 200mA
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage High forward transfer admittance Complementary to 2SK1529 : V DSS = 180
More informationYJS12N10A. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary V DS I D R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =6V) 100% UIS Tested 100% VDS Tested 100V 12A
More informationJ/SST108 J/SST109 J/SST110 MIN MAX MIN MAX MIN MAX
J/SST108 SERIES Linear Integrated Systems LOW NOISE SINGLE N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE r DS(on) 8Ω FAST SWITCHING t ON
More information2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These n-channel enhancement mode field effect transistors are produced using National s very high
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationDual N-channel Enhancement-mode Power MOSFETs
Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description
More informationLSK170A LSK170B 6 12 LSK170C 10 20
LSK170 Linear Integrated Systems FEATURES ULTRA LOW NOISE (f = 1kHz) e n = 0.9nV/ Hz HIGH BREAKDOWN VOLTAGE BV GSS = 40V max HIGH GAIN Y fs = 22mS (typ) HIGH INPUT IMPEDANCE I G = -500pA max LOW CAPACITANCE
More informationBS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor
BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode field effect transistors are produced using National s very high cell density third
More informationAOP608 Complementary Enhancement Mode Field Effect Transistor
AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationFeatures. TA=25 o C unless otherwise noted
NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationN-Channel Enhancement-Mode Vertical DMOS FETs
2N72 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability
More informationDual N-Channel Enhancement Mode Field Effect Transistor
Description The is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize
More informationN-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..
Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current
More informationHCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET
HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More informationLSK489. Linear Integrated Systems 4042 Clipper Court Fremont, CA Tel: Fax: Doc /09/17 Rev#A31 ECN# LSK489
Over Three Decades of Quality Through Innovation LSK489 LOW NOISE LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE LOW INPUT CAPACITANCE en = 1.8nV/ Hz Ciss = 4pF Features
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationAP6900GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp.
AP69GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S/D2 Simple Drive Requirement CH- BV DSS 3V S/D2 DC-DC Converter Suitable R DS(ON) 3mΩ G S/D2
More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
More information2SK1056, 2SK1057, 2SK1058
SK, SK7, SK8 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with SJ1, SJ11 and SJ1 Features Good frequency characteristic High speed switching Wide area of safe
More informationUNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC QS8M11 uses UTC s advanced technology to provide the customers with low voltage
More informationUNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,
More informationAO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a
More informationUNISONIC TECHNOLOGIES CO., LTD UT4411
UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationUNISONIC TECHNOLOGIES CO., LTD UT60N03
UNISONIC TECHNOLOGIES CO., LTD UT60N03 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET DESCRIPTION TO-220 TO-25 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance.
More informationAO6801 Dual P-Channel Enhancement Mode Field Effect Transistor
May 22 AO68 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO68 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable
More informationMDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
More informationAP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.
AP5GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge D N-CH BV DSS V S Low On-resistance D R DS(ON) 7mΩ Surface Mount Package I D.A
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationUNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology
More informationUNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET -80A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the
More informationTSM2307CX 30V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationUNISONIC TECHNOLOGIES CO., LTD UT4435
UNISONIC TECHNOLOGIES CO., LTD UT4435-8.8A, -30V P-CHANNEL POWER MOSFET DESCRIPTION The UT4435 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate
More informationMDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω
General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power
More informationTSM4936D 30V N-Channel MOSFET
SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 36 @ V GS = 10V 5.9 30 53 @ V GS = 4.5V 4.9
More informationHFI50N06A / HFW50N06A 60V N-Channel MOSFET
HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
More informationUNISONIC TECHNOLOGIES CO., LTD TF219 Preliminary JFET
UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF219 is an N-Channel Junction FET, it uses UTC s advanced technology to provide the customers with high voltage
More information50 A 27 A ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Unit
IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFZ40 IRFZ40FI TYPE V DSS R DS(on) I D 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY
More informationUNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D PN PN PN TO-92 This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance
More informationMDS9652E Complementary N-P Channel Trench MOSFET
MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More informationHRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET
HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More informationAdvanced Power Electronics Corp.
Advanced Power Electronics Corp AP65SL99AWL Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET % R g & UIS Test D V DS @ T j,max 7V Fast Switching Characteristic R DS(ON) 99mΩ 3 Simple Drive
More informationSMK0460IS Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω
More informationMDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance
More informationHGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS
, HGI29NSL P- Feature High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness % UIS Tested, % Rg Tested Lead Free, Halogen Free V N-Ch Power MOSFET V
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process
More informationProduct Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A
SIAI N-Channel Enhancement Mode Power MOSFET General Description The S75NF75 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationYJG80G06A. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT Top View N-Channel Enhancement Mode Field Effect Transistor PDFN 5X6 8L Bottom View Product Summary V DS I D (at V GS =10V) R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =4.5V) 100% UIS Tested
More informationSupertex inc. TN2510. N-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
TN51 N-Channel Enhancement-Mode Vertical DMOS FET Features Low threshold (.V max.) High input impedance Low input capacitance (15pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown
More informationAO3408 N-Channel Enhancement Mode Field Effect Transistor
August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationFeatures. Symbol JEDEC TO-204AA GATE (PIN 1)
Semiconductor BUZB Data Sheet October 998 File Number 9. [ /Title (BUZ B) /Subject A, V,. hm, N- hannel ower OS- ET) /Author ) /Keyords Harris emionducor, N- hannel ower OS- ET, O- AA) /Creator ) /DOCIN
More informationAO3401 P-Channel Enhancement Mode Field Effect Transistor
July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
More informationSupertex inc. TN0106. N-Channel Enhancement-Mode Vertical DMOS FET
TN16 N-Channel Enhancement-Mode Vertical DMOS FET Features Low threshold - 2.V max. High input impedance Low input capacitance - 5pF typical Fast switching speeds Low on-resistance Free from secondary
More information