Silicon Junction Field-Effect Transistors

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1 0/99 D- Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors SK SK5 SK6 SJ44 Japanese IFN IFN5 IFN6 IFP44 InterFET NJ NJL NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V Min na ( 0 V) ( 0 V) ( 0 V) (0 V) Max 0./ 0 0.5/.0 0./. 0./.5 V (0 V) ( 0 V) (0 V) ( 0 V) Min/Max 5.0/50 5.0/0 5.0/0.0/8 ma (0 V) (0 V) (0 V) ( 0 V) Min/Max ms (0 V) (0 V) (0 V) ( 0 V) Typ pf (Ø) (0 V) (Ø) (0 V) (Ø) (0 V) (Ø) ( 0 V) Typ pf (Ø) (5 V) (Ø) (0 V) (Ø) (0 V) (Ø) ( 0 V) Typ BV GSS I GSS V GS(off) TO-8 TO-8 TO-8 TO-8 Package Configuration I DSS SDG SDG DGS DGS Pin Configuration g fs C iss C rss (97) FAX (97) 76-75

2 0/99 D-5 IFN46 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Japanese SK46 Absolute maximum ratings at T A = 5 C Reverse Gate Source & Reverse Gate Drain Voltage 40 V Continuous Forward Gate Current 0 ma Continuous Device Power Dissipation 75 mw Power Derating mw/ C Storage Temperature Range 65 C to 00 C At 5 C free air temperature: IFN46 Process NJ450 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS 40 V I G = µa, V DS = ØV na V GS = 0V, V DS = ØV Gate Reverse Current I GSS µa V GS = 0V, V DS = ØV T A = 50 C Gate Source Cutoff Voltage V GS(OFF) 0.. V V DS = 0V, I D = µa Drain Saturation Current (Pulsed) I DSS 0 ma V DS = 0V, V GS = ØV Dynamic Electrical Characteristics Common Source Forward Transconductance g fs 0 40 ms V DS = 0V, V GS = ØV I DSS = 5 ma Common Source Input Capacitance C iss 75 pf V DS = 0V, V GS = ØV Common Source Reverse Transfer Capacitance C rss 5 pf V DS = 0V, I D = ØA Noise Figure NF db V DS = 0V, I D = 5 ma R G = 00Ω Differential Gate Source Voltage V GS V GS 0 mv V DS = 0V, I D = 5 ma TOÐ7 Package Pin Configuration Source, Gate, Drain, 5 Source, 6 Gate, 7 Drain (97) FAX (97) 76-75

3 D-6 0/99 IFN47 N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Japanese SK47 Absolute maximum ratings at T A = 5 C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 40 V 0 ma 00 mw.4 mw/ C At 5 C free air temperature: IFN47 Process NJ450 Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS 40 V I G = µa, V DS = ØV na V GS = 0V, V DS = ØV Gate Reverse Current I GSS µa V GS = 0V, V DS = ØV T A = 50 C Gate Source Cutoff Voltage V GS(OFF) 0.. V V DS = 0V, I D = µa Drain Saturation Current (Pulsed) I DSS 5 0 ma V DS = 0V, V GS = ØV Dynamic Electrical Characteristics Common Source Forward Transconductance g fs 0 40 ms V DS = 0V, V GS = ØV I DSS = 5 ma Common Source Input Capacitance C iss 75 pf V DS = 0V, V GS = ØV Common Source Reverse Transfer Capacitance C rss 5 pf V DS = 0V, I D = Ø f = Hz Noise Figure NF db V DS = 0V, I D = 5 ma 0 db R G = 00Ω f = 00 Hz TOÐ8 Package Pin Configuration Source, Gate & Case, Drain

4 G- 0/99 TO-8 Package 0.0 (5.) 0.95 (4.95) 0.78 (4.5) Leads (.54) - Typ (.) 0.08 (0.7) 0.00 (0.76) Max (9.05) Max (.70) Min (.7) 0.06 (0.9) TO-9 Package Alternate (Preferred) version cap height = Max 0.85 (4.70), Min 0.65 (4.9) 0.70 (9.40) 0.50 (8.89) 0.5 (8.5) 0.5 (8.00) 0.60 (6.60) 0.40 (6.0) 0.5 (.8) Max (0.) Min (9.05) Max (.70) Min Leads (5.4) 0.90 (4.8) (.4) 0.09 (0.74) 0.04 (0.86) 0.08 (0.7)

5 G-4 0/99 TO-7 Package 0.0 (5.4) 0.95 (4.96) 0.75 (4.44) 0.00 (0.76) Max (9.05) Max (.70) Min 6 Leads (0.48) 0.06 (0.406) 0.00 (.54) - Typ (.) 0.08 (0.7) (.7) 0.06 (0.9) TO-7 Package 0.0 (5.) 0.95 (4.95) 0.78 (4.5) 4 Leads (.54) - Typ (.) 0.08 (0.7) 0.00 (0.76) Max (9.05) Max (.70) Min (.7) 0.06 (0.9)

Silicon Junction Field-Effect Transistors

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