2SK2393. Silicon N-Channel MOS FET. Application. Features. Outline. High voltage / High speed power switching

Transcription

1 SK9 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-PL D G S. Gate. Drain (Flange). Source

2 SK9 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage V DSS V Gate to source voltage V GSS ± V Drain current I D 8 A Drain peak current I D(pulse) * A Body to drain diode reverse drain current I DR 8 A Channel dissipation Pch* W Channel temperature Tch C Storage temperature Tstg to + C Notes. PW µs, duty cycle %. Value at Tc = C Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V (BR)DSS V I D = ma, V GS = * voltage Gate to source leak current I GSS ± µa V GS = ± V, V DS = Zero gate voltage drain current I DSS µa V DS = V, V GS = Gate to source cutoff voltage V GS(off).. V I D = ma, V DS = V Static drain to source on state resistance R DS(on).9.8 Ω I D = A V GS = V* Forward transfer admittance y fs.8. S I D = A V DS = V* Input capacitance Ciss 7 pf V DS = V Output capacitance Coss 6 pf V GS = Reverse transfer capacitance Crss pf f = MHz Turn-on delay time t d(on) 7 ns I D = A Rise time t r 8 ns V GS = V Turn-off delay time t d(off) 6 ns R L = 7. Ω Fall time t f ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note. V DF.9 V I F = 8 A, V GS = t rr 6. µs I F = 8 A, V GS =, di F / dt = A / µs

3 SK9 Power vs. Temperature Derating Maximum Safe Operation Area Channel Dissipation Pch (W) Case Temperature Tc ( C). Operation in this area is limited by R DS(on) ms µs µs PW = ms (shot) DC Operation (Tc = C). Ta = C Drain to Source Voltage V DS (V) 8 6 Typical Output Characteristics V V 8 V 7 V 6 V V GS = V Typical Transfer Characteristics V DS = V Tc = 7 C C C Drain to Source Voltage V DS (V) 6 8 Gate to Source Voltage V GS (V)

4 SK9 Drain to Source Voltage V DS(on) (V) 6 8 Drain to Source Saturation Voltage vs. Gate to Source Voltage I D = A A A 8 6 Gate to Source Voltage V GS (V) Drain to Source On State Resistance R DS(on) ( Ω ) Static Drain to Source on State Resistance vs. Drain Current. V GS = V V... Static Drain to Source on State Resistance R DS(on) ( Ω ) Static Drain to Source on State Resistance vs. Temperature I D = A A A V GS = V 8 6 Case Temperature Tc ( C) Forward Transfer Admittance yfs (S).... Forward Transfer Admittance vs. Drain Current Tc = C C 7 C V DS = V..

5 SK9 Reverse Recovery Time trr (µs). Body to Drain Diode Reverse Recovery Time di/dt = A/µs V =, Ta = C GS.. Reverse Drain Current I DR (A) Capacitance C (pf) Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss V GS = f = MHz Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) 8 6 V DS Dynamic Input Characteristics I D = 8 A V DD = V V 6 V V GS 6 V DD = V V 6 V 8 6 Gate Charge Qg (nc) 8 Gate to Source Voltage V GS (V) Switching Time t (ns). Switching Characteristics t f V GS = V, V DD = V PW = µs, duty < % t r t d(off) t d(on)..

6 SK9 Reverse Drain Current I DR (A) 8 6 Reverse Drain Current vs. Source to Drain Voltage V V V GS =, V Source to Drain Voltage V SD (V) Switching Time Test Circuit Waveform Vin Monitor D.U.T. R L Vout Monitor Vin % 9% Vin V Ω VDD = V Vout % % 9% 9% td(on) tr td(off) t f 6

7 Unit: mm 6. ±.. ±. φ. ±.. ±. 6. ±.. ±.6. ± ±.. ± ± Hitachi Code JEDEC EIAJ Weight (reference value) TO-PL 9.9 g

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