Item Symbol Ratings Unit Drain to Source voltage V DSS 300 V Gate to Source voltage V GSS ±30 V Drain current I D 88 A Drain peak current.

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1 H5NP Silicon N Channel MOS FET High Speed Power Switching REJG85- Rev.. Aug.5.4 Features Low on-resistance Low leakage current High speed switching Outline TO-P D G. Gate. Drain (Flange). Source S Absolute Maximum Ratings (Ta = 5 C) Item Symbol Ratings Unit Drain to Source voltage V DSS V Gate to Source voltage V GSS ± V Drain current I D 88 A Drain peak current Note I D (pulse) 76 A Body-Drain diode reverse Drain current I DR 88 A Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy I DR (pulse) Note I AP Note E AR Note 76 A A 54 mj Channel dissipation Pch Note 5 W Channel to case thermal impedance θch-c.8 C/W Channel temperature Tch 5 C Storage temperature Tstg 55 to +5 C Notes:. PW µs, duty cycle %. Value at Tc = 5 C. STch = 5 C, Tch 5 C Rev.., Aug.5.4, page of 6

2 H5NP Electrical Characteristics Item Symbol Min Typ Max Unit Test conditions Drain to Source breakdown voltage V (BR)DSS V I D = ma, V GS = Zero Gate voltage Drain current I DSS µa V DS = V, V GS = Gate to Source leak current I GSS ±. µa V GS = ± V, V DS = (Ta = 5 C) Gate to Source cutoff voltage V GS(off). 4.5 V V DS = V, I D = ma Forward transfer admittance yfs 56 S I D = 44 A, V DS = V Note4 Static Drain to Source on state resistance R DS(on).4.48 Ω I D = 44 A, V GS = V Note4 Input capacitance Ciss 5 pf Output capacitance Coss 64 pf Reverse transfer capacitance Crss 65 pf Turn-on delay time t d(on) 6 ns Rise time t r 7 ns Turn-off delay time t d(off) ns Fall time t f 8 ns V DS = 5 V V GS = f = MHz I D = 44 A V GS = V R L =.4 Ω Rg = Ω Total Gate charge Qg 95 nc V DD = 4 V Gate to Source charge Qgs 5 nc V GS = V Gate to Drain charge Qgd 4 nc I D = 88 A Body-Drain diode forward voltage V DF..5 V I F = 88 A, V GS = Note4 Body-Drain diode reverse recovery time trr 6 ns I F = 88 A, V GS = Body-Drain diode reverse recovery charge Qrr.5 µc dif/dt = A/µs Notes: 4. Pulse test Rev.., Aug.5.4, page of 6

3 H5NP Main Characteristics Channel Dissipation Pch (W) Power vs. Temperature Derating Case Temperature Tc ( C) Drain Current ID (A) Maximum Safe Operation Area Operation in this area is limited by R DS(on) ms µs µs PW = ms. (shot). DC Operation. Ta = 5 C (Tc = 5 C). Drain Current ID (A) Typical Output Characteristics V 8 V 6 V 5.5 V V GS = 5 V Drain Current ID (A) Typical Transfer Characteristics V DS = V Tc = 75 C 5 C 5 C Gate to Source Voltage V GS (V) Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage I D = 88 A 44 A Drain to Source on State Resistance R DS(on) (Ω) Static Drain to Source on State Resistance vs. Drain Current. V GS = V, 5 V.5 A Gate to Source Voltage V GS (V) Drain Current I D (A)...5 Rev.., Aug.5.4, page of 6

4 H5NP Static Drain to Source on State Resistance R DS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature. V GS = V A I D = 88 A A Case Temperature Tc ( C) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current Tc = 5 C 75 C 5 C. V DS = V... Drain Current I D (A) Reverse Recovery Time trr (ns) 5 5 Body-Drain Diode Reverse Recovery Time 5 di / dt = A / µs V GS =, Ta = 5 C.. Reverse Drain Current I DR (A) Capacitance C (pf) Typical Capacitance vs. Drain to Source Voltage V GS = f = MHz Ciss Coss Crss Dynamic Input Characteristics I D = 88 A 6 V DD = 5 V V 4 V V GS V DS 8 V DD = 4 V 4 V 5 V Gate Charge Qg (nc) Gate to Source Voltage VGS (V) Switching Time t (ns) tr Switching Characteristics V GS = V, V DD = 5 V PW = 5 µs, duty < % R G = Ω tf tf td(off) td(on).. Drain Current I D (A) tr Rev.., Aug.5.4, page 4 of 6

5 H5NP Reverse Drain Current I DR (A) Reverse Drain Current vs. Source to Drain Voltage V 5 V V GS = V Source to Drain Voltage V SD (V) Gate to Source Cutoff Voltage V GS(off) (V) 5 4 Gate to Source Cutoff Voltage vs. Case Temperature V DS = V I D = ma. ma ma Case Temperature Tc ( C) Normalized Transient Thermal Impedance γ s (t)... D = shot pulse Normalized Transient Thermal Impedance vs. Pulse Width. µ µ m m m Pulse Width PW (s) PDM PW T Tc = 5 C θ ch c(t) = γ s (t) θ ch c θch c =.8 C/W, Tc = 5 C D = PW T Switching Time Test Circuit Waveform Vin Monitor Vin V Ω D.U.T. R L Vout Monitor VDD = 5 V Vin Vout % % 9% % 9% 9% td(on) tr td(off) t f Rev.., Aug.5.4, page 5 of 6

6 H5NP Package Dimensions 5.6 ±. φ. ±.. 5. ±. 4.8 ±..5 As of January, Unit: mm Max ±. 8. ± ±...8. ±..6 ± ± ±.5 Package Code JEDEC JEITA Mass (reference value) TO-P Conforms 5. g Ordering Information Part Name Quantity Shipping Container H5NP-E pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.., Aug.5.4, page 6 of 6

7 Sales Strategic Planning Div. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo -4, Japan Keep safety first in your circuit designs!. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page ( 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 45 Holger Way, San Jose, CA , U.S.A Tel: <> (48) 8-75 Fax: <> (48) 8-75 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (68) 585, Fax: <44> (68) Renesas Technology Europe GmbH Dornacher Str., D-856 Feldkirchen, Germany Tel: <49> (89) 8 7, Fax: <49> (89) 99 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <85> , Fax: <85> Renesas Technology Taiwan Co., Ltd. FL, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> () , Fax: <886> () Renesas Technology (Shanghai) Co., Ltd. 6/F., Ruijin Building, No.5 Maoming Road (S), Shanghai, China Tel: <86> () 647-, Fax: <86> () Renesas Technology Singapore Pte. Ltd., Harbour Front Avenue, #6-, Keppel Bay Tower, Singapore 986 Tel: <65> 6-, Fax: <65> Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon..