2SK2596. Silicon N-Channel MOS FET UHF Power Amplifier. ADE (Z) 1st. Edition Mar Features. Outline

Transcription

1 Silicon N-Channel MOS FET UHF Power Amplifier ADE (Z) st. Edition Mar. 00 Features High power output, High gain, High efficiency PG =.db, Pout = 3dBm, ηd = 4 %min. (f = 836.MHz) Compact package capable of surface mounting Outline UPAK 3 G D 4. Gate. Source 3. Drain 4. Source S This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested.

2 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage V DSS 7 V Gate to source voltage V GSS ±0 V Drain current I D 0.4 A Drain peak current I D(pulse) * A Channel dissipation Pch* 3 W Channel temperature Tch 0 C Storage temperature Tstg 4 to +0 C Notes:. PW 0µs, duty cycle %. Value at Tc = C Electrical Characteristics (Ta = C) Item Symbol Min. Typ Max. Unit Test Conditions Zero gate voltage drain I DSS 0 µa V DS = V, V GS = 0 current Gate to source leak current I GSS ±.0 µa V GS = ±0V, V DS = 0 Gate to source cutoff voltage V GS(off) 0.4. V I D = ma, V DS = V Input capacitance Ciss pf V GS = V, V DS = 0 f = MHz Output capacitance Coss 0. pf V DS = V, V GS = 0 f = MHz Output Power Pout dbm V DS = V f = 836.MHz Pin = 8dBm Drain Rational ηd 4 % V DS = V Pout = 3dBm f = 836.MHz Pin = 8dBm

3 Main Characteristics Channel Power Dissipation Pch (W) 4 3 Maximum Channel Power Dissipation Curve Case Temperature Tc ( C) Typical Output Characteristics Pulse test 0 V 8 V 6 V V 4 V 3 V V GS = V Drain to Source Voltage V DS (V) Typical Transfer Characteristics Tc = C C 7 C V DS = V 0.0 Pulse Test V DS = V Pulse Test Gate to Source Voltage V (V) GS Forward Transfer Admittance y fs (S) Forward Transfer Admittance vs. Drain Current Tc = C C 7 C 3

4 Drain to Source Saturation Voltage V DS(sat) (V) Drain to Source Saturation Voltage vs. Drain Current Tc = C C 7 C V DS = V Pulse Test Gate to Source Cutoff Voltage V GS(off) (V) Gate to Source Cutoff Voltage vs. Ambient Temperature V DS = V 0 ma ma I = 0. ma D Ambient Temperature Ta ( C) 4 Input Capacitance vs. Gate to Source Voltage 00 Output Capacitance vs. Drain to Source Voltage Input Capacitance Ciss (pf) V DS = 0 4 f = MHz Gate to Source Voltage V GS (V) Output Capacitance Coss (pf) V GS = 0 f = MHz Drain to Source V DS (V) 4

5 Reverse Transfer Capacitance Crss (pf) Reverse Transfer Capacitance vs. Gate to Source Votage V GS = 0 f = MHz Gate to Source Voltege V GS (V) Output Power Po (W) Output Power, Drain Rational vs. Input Power V DS = V I DO= 00 ma f = 836.MHz Po η D Input power Pin (W) Drain Rational η D (%)

6 Package Dimensions As of January, 00 Unit: mm 4. ± 0..8 Max 0.4. ± Max (.) 0.3 Max 0.48 Max φ ± Max 0.8 Min 0.44 Max (.) (0.4) () Hitachi Code JEDEC EIAJ Mass (reference value) UPAK Conforms 0.00 g 6

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