2SC460, 2SC461. Silicon NPN Epitaxial Planar. Application. Outline. 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixer TO-92 (2)

Transcription

1 Silicon NPN Epitaxial Planar Application 2SC46 high frequency amplifier, mixer 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1

2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC46 2SC461 Unit Collector to base voltage V CBO 3 3 V Collector to emitter voltage V CEO 3 3 V Emitter to base voltage V EBO 5 5 V Collector current I C ma Collector power dissipation P C mw Junction temperature Tj 1 1 C Storage temperature Tstg 55 to to +1 C 2

3 Electrical Characteristics (Ta = 25 C) 2SC46 2SC461 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 3 3 V I C = µa, I E = Collector to emitter breakdown voltage Emitter to base breakdown voltage V (BR)CEO 3 3 V, R BE = V (BR)EBO 5 5 V I E = µa, I C = Collector cutoff current I CBO.5.5 µa V CB = 18 V, I E = Emitter cutoff current I EBO.5.5 µa V EB = 2 V, I C = Base to emitter voltage V BE V V CE = 12 V, I C = 2 ma DC current transfer ratio h FE * V CE = 12 V, I C = 2 ma Collector to emitter saturation voltage V CE(sat) V I C = ma, I B = 1 ma Gain bandwidth product f T MHz V CE = 12 V, I C = 2 ma Collector output capacitance C ob pf V CB = V, I E =, f = 1 MHz.7 MHz power gain PG db, I E = 1 ma f =.7 MHz MHz power gain PG db, I E = 1 ma f = MHz Noise figure NF 2. db, I E = 1 ma f = 1MHz R g = Ω Note: 1. The 2SC46 and 2SC461 are grouped by h FE as follows. A B C 35 to 7 6 to 1 to 3

4 Small Signal y Parameters (V CE = 6 V, I C = 1 ma, Emitter Common) Item Symbol f 2SC46A, 2S461A 2SC46B, 2SC461B 2SC46C, 2SC461C Unit Input admittance yie 455 khz.58 + j j j.51 ms 4.5 MHz.65 + j j j.57.7 MHz.91 + j j j1.3 MHz j j j6. Reverse transfer admittance yre 455 khz j.3 j.3 j.3 ms 4.5 MHz j.4 j.4 j.4.7 MHz j3 j3 j3 MHz j1. j1. j1. Forward transfer admittance yfe 455 khz 38 j 37 j 37 j.2 ms 4.5 MHz 35 j1. 35 j j1.8.7 MHz 34 j j j4.5 MHz 28 j 28 j19 j19 Output admittance yoe 455 khz.98 + j j j.12 ms 4.5 MHz.2 + j j j..7 MHz 1 + j j j.4 MHz.4 + j j j2. 4

5 Collector Power Dissipation P C (mw) 2 1 Maximum Collector Dissipation Curve Typical Output Characteristics µa I B = 1 Ambient Temperature Ta ( C) Typical Transfer Characteristics DC Current Transfer Ratio vs DC Current Transfer Ratio h FE Base to Emitter Voltage V BE (V)

6 Noise Figure NF (db) Noise Figure vs. R g = Ω f = 1. MHz Noise Figure NF (db) Noise Figure vs. R g = Ω f = MHz Noise Figure NF (db) Noise Figure vs. Signal Source Resistance 12 I C = 1 ma f = MHz Gain Bandwidth Product f T (MHz) 4 3 Gain Bandwidth Product vs. Signal Source Resistance R g (Ω)

7 Gain Bandwidth Product f T (MHz) 4 3 Gain Bandwidth Product vs Collector to Emitter Volgage V CE (V) Percentage of Relative to (%) f = 455 khz Percentage of Relative to I E = 1 ma (%) f = 455 khz Percentage of Relative to (%) f = 455 khz

8 Percentage of Relative to (%) f = 455 khz Percentage of Relative to (%) f = 4.5 MHz Percentage of Relative to (%) f = 4.5 MHz Percentage of Relative to (%) f = 4.5 MHz

9 Percentage of Relative to (%) f = 4.5 MHz Percentage of Relative to (%) gie f =.7 MHz Percentage of Relative to (%) f =.7 MHz Percentage of Relative to (%) f =.7 MHz

10 Percentage of Relative to (%) f =.7 MHz Percentage of Relative to (%) f = MHz Percentage of Relative to (%) f = MHz g ie boe Percentage of Relative to (%) f = MHz 1 2 5

11 Percentage of Relative to (%) f = MHz 11

12 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms.25 g Unit: mm 4.8 ± ±.3 5. ±.2.6 Max.45 ± Max 12.7 Min

13 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo -4, Japan Tel: Tokyo (3) Fax: (3) URL NorthAmerica : Europe : Asia (Singapore) : Asia (Taiwan) : Asia (HongKong) : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA Tel: <1> (48) Fax: <1>(48) Hitachi Europe GmbH Electronic components Group Dornacher Stra e 3 D Feldkirchen, Munich Germany Tel: <49> (89) Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 58 Fax: <44> (1628) Hitachi Asia Pte. Ltd. 16 Collyer Quay #- Hitachi Tower Singapore Tel: 535- Fax: Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (5) Tel: <886> (2) Fax: <886> (2) Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) Fax: <852> (2) Telex: 4815 HITEC HX Copyright ' Hitachi, Ltd., All rights reserved. Printed in Japan.

14 This datasheet has been download from: Datasheets for electronics components.