CA3045, CA3046. General Purpose NPN Transistor Arrays. Features. Description. Ordering Information. Applications. Pinout.

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1 SEMICONDUCTOR CA4, CA46 November 996 General Purpose NPN Transistor Arrays Features Description Two Matched Transistors - V BE Match ±mv - I IO Match µa (Max) Low Noise Figure dB (Typ) at khz General Purpose Monolithic Transistors Operation From DC to MHz Wide Operating Current Range Full Military Temperature Range Applications Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range Custom Designed Differential Amplifiers Temperature Compensated Amplifiers See Application Note, AN96 Application of the CA8 Integrated-Circuit Transistor Array for Suggested Applications The CA4 and CA46 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA4 and CA46 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. Ordering Information PART NUMBER (BRAND) TEMP. RANGE ( o C) PACKAGE PKG. NO. CA4 - to 4 Ld SBDIP D4. CA4F - to 4 Ld CERDIP F4. CA46 - to 4 Ld PDIP E4. CA46M (46) - to 4 Ld SOIC M4. CA46M96 (46) - to 4 Ld SOIC Tape and Reel M4. Pinout CA4, (CERDIP, SBDIP) CA46 (PDIP, SOIC) TOP VIEW DIFFERENTIAL PAIR Q Q Q Q 4 9 SUBSTRATE 7 Q 8 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright Harris Corporation File Number 4.

2 CA4, CA46 Absolute Maximum Ratings Collector-to-Emitter Voltage (V CEO ) V Collector-to-Base Voltage (V CBO ) V Collector-to-Substrate Voltage (V CIO, Note ) V Emitter-to-Base Voltage (V EBO ) V Collector Current (I C ) ma Operating Conditions Temperature Range o C to o C Thermal Information Thermal Resistance (Typical, Note ) θ JA ( o C/W) θ JC ( o C/W) PDIP Package N/A CERDIP Package SBDIP Package SOIC Package N/A Maximum Power Dissipation (Any One Transistor) mw Maximum Junction Temperature (Hermetic Packages) o C Maximum Junction Temperature (Plastic Package) o C Maximum Storage Temperature Range o C to o C Maximum Lead Temperature (Soldering s) o C (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES:. The collector of each transistor of the CA4 and CA46 is isolated from the substrate by an integral diode. The substrate (Terminal ) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.. θ JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications, characteristics apply for each transistor in CA4 and CA46 as specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS Collector-to-Base Breakdown Voltage V (BR)CBO I C = µa, I E = 6 - V Collector-to-Emitter Breakdown Voltage V (BR)CEO I C = ma, I B = 4 - V Collector-to-Substrate Breakdown Voltage V (BR)CIO I C = µa, I CI = 6 - V Emitter-to-Base Breakdown Voltage V (BR)EBO I E = µa, I C = 7 - V Collector Cutoff Current (Figure ) I CBO V CB = V, I E = -. 4 na Collector Cutoff Current (Figure ) I CEO V CE = V, I B = - See Fig.. µa Forward Current Transfer Ratio (Static Beta) (Note ) (Figure ) h FE I C = ma I C = ma I C = µa Input Offset Current for Matched Pair Q and Q. I IO - I IO (Note ) (Figure 4), I C = ma -. µa Base-to-Emitter Voltage (Note ) (Figure ) V BE I E = ma V I E = ma V Magnitude of Input Offet Voltage for Differential Pair V BE - V BE (Note ) (Figures, 7) Magnitude of Input Offset Voltage for Isolated Transistors V BE - V BE4, V BE4 - V BE, V BE - V BE (Note ) (Figures, 7) Temperature Coefficient of Base-to-Emitter Voltage (Figure 6) V BE T, I C = ma -.4 mv, I C = ma -.4 mv, I C = ma mv/ o C Collector-to-Emitter Saturation Voltage V CES I B = ma, I C = ma -. - V Temperature Coefficient: Magnitude of Input Offset Voltage (Figure 7) V IO T, I C = ma -. - µv/ o C 7-

3 CA4, CA46 Electrical Specifications, characteristics apply for each transistor in CA4 and CA46 as specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figure 9) NF f = khz,, I C = µa, Source Resistance = kω -. - db Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure ) h FE f = khz,, I C = ma Short Circuit Input Impedance (Figure ) h IE f = khz,, I C = ma -. - kω Open Circuit Output Impedance (Figure ) h OE f = khz,, I C = ma µs Open Circuit Reverse Voltage Transfer Ratio (Figure ) h RE f = khz,, I C = ma -.8 x Admittance Characteristics Forward Transfer Admittance (Figure ) Y FE f = khz,, I C = ma - - j. - - Input Admittance (Figure ) Y IE f = khz,, I C = ma -. + j Output Admittance (Figure 4) Y OE f = khz,, I C = ma -. + j. - - Reverse Transfer Admittance (Figure ) Y RE f = khz,, I C = ma - See Fig Gain Bandwidth Product (Figure 6) f T, I C = ma - MHz Emitter-to-Base Capacitance C EB V EB = V, I E = pf Collector-to-Base Capacitance C CB V CB = V, I C = pf Collector-to-Substrate Capacitance C CI V CS = V, I C = pf NOTE:. Actual forcing current is via the emitter for this test. Typical Performance Curves COLLECTOR CUTOFF CURRENT (na) I E = V CB = V V CB = V V CB = V -4 7 COLLECTOR CUTOFF CURRENT (na) I B = V CE = V V CE = V 7 FIGURE. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR FIGURE. TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR 7-4

4 CA4, CA46 Typical Performance Curves (Continued) STATIC FORWARD CURRENT TRANSFER RATIO (h FE ) h FE h FE OR h FE h h FE FE BETA RATIO INPUT OFFSET CURRENT (µa)..... EMITTER CURRENT (ma) FIGURE. TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO AND BETA RATIO FOR Q AND Q vs EMITTER CURRENT.... FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR MATCHED TRANSISTOR PAIR Q Q vs COLLECTOR CURRENT BASE-TO-EMITTER VOLTAGE (V) V BE INPUT OFFSET VOLTAGE.4... EMITTER CURRENT (ma) INPUT OFFSET VOLTAGE (mv) BASE-TO-EMITTER VOLTAGE (V) I E = ma I E = ma I E =.ma FIGURE. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTICS AND INPUT OFFSET VOLTAGE FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs EMITTER CURRENT FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC vs TEMPERATURE FOR EACH TRANSISTOR INPUT OFFSET VOLTAGE (mv) I E = ma I E = ma I E =.ma NOISE FIGURE (db) R S = Ω f =.khz f = khz f = khz FIGURE 7. TYPICAL INPUT OFFSET VOLTAGE CHARACTERISTICS FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs TEMPERATURE... FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT 7-

5 CA4, CA46 Typical Performance Curves (Continued) R S = Ω R S = Ω NOISE FIGURE (db) f = khz f = khz f =.khz NOISE FIGURE (db) f = khz f = khz f =.khz.. FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT.. FIGURE. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT NORMALIZED h PARAMETERS. f = khz h RE h IE h FE = h IE =.kω h RE =.88 x -4 h OE =.6µS AT ma h RE h OE h FE h IE.... FORWARD TRANSFER CONDUCTANCE (g FE ) OR SUSCEPTANCE (b FE ) (ms) 4,, I C = ma g FE - b FE -. FIGURE. TYPICAL NORMALIZED FORWARD CURRENT TRANSFER RATIO, SHORT CIRCUIT INPUT IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO vs COLLECTOR CURRENT FIGURE. TYPICAL FORWARD TRANSFER ADMITTANCE vs FREQUENCY INPUT CONDUCTANCE (g IE ) OR SUSCEPTANCE (b IE ) (ms) 6,, I C = ma 4 b IE g IE. OUTPUT CONDUCTANCE (g OE ) OR SUSCEPTANCE (b OE ) (ms) 6 4,, I C = ma b OE g OE. FIGURE. TYPICAL INPUT ADMITTANCE vs FREQUENCY FIGURE 4. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY 7-6

6 CA4, CA46 Typical Performance Curves (Continued) REVERSE TRANSFER CONDUCTANCE (g RE ) OR SUSCEPTANCE (b RE ) (ms) ,, I C = ma g RE IS SMALL AT FREQUENCIES LESS THAN MHz b RE -. GAIN BANDWIDTH PRODUCT (MHz) FIGURE. TYPICAL REVERSE TRANSFER ADMITTANCE vs FREQUENCY FIGURE 6. TYPICAL GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT All Harris Semiconductor products are manufactured, assembled and tested under ISO9 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters NORTH AMERICA Harris Semiconductor P. O. Box 88, Mail Stop - Melbourne, FL 9 TEL: (47) FAX: (47) 79- For general information regarding Harris Semiconductor and its products, call -8-4-HARRIS EUROPE Harris Semiconductor Mercure Center, Rue de la Fusee Brussels, Belgium TEL: ().74. FAX: ().74.. ASIA Harris Semiconductor PTE Ltd. No. Tannery Road Cencon, #9- Singapore 4 TEL: (6) FAX: (6) SEMICONDUCTOR 7-7