HA Quad, 3.5MHz, Operational Amplifier. Description. Features. Applications. Ordering Information. Pinouts. November 1996

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1 SEMICONDUCTOR HA4741 November 1996 Features Slew Rate V/µs Bandwidth MHz Input Voltage Noise nV/ Hz Input Offset Voltage mV Input Bias Current nA Supply Range ±V to ±V No Crossover Distortion Standard Quad Pinout Applications Universal Active Filters D Communications Filters Audio Amplifiers BatteryPowered Equipment Ordering Information PART NUMBER TEMP. RANGE ( o C) PACKAGE PKG. NO. HA14741 to 1 14 Ld CERDIP F14. Quad,.MHz, Operational Amplifier Description HA4741, which contains four amplifiers on a monolithic chip, provides a new measure of performance for general purpose operational amplifiers. Each amplifier in the HA4741 has operating specifications that equal or exceed those of the 741type amplifier in all categories of performance. HA4741 is well suited to applications requiring accurate signal processing by virtue of its low values of input offset voltage (.mv), input bias current (6nA) and input voltage noise (9nV/ Hz at 1kHz)..MHz bandwidth, coupled with high openloop gain, allow the HA4741 to be used in designs requiring amplification of wide band signals, such as audio amplifiers. Audio application is further enhanced by the HA4741 s negligible output crossover distortion. These excellent dynamic characteristics also make the HA 4741 ideal for a wide range of active filter designs. Performance integrity of multichannel designs is assured by a high level of amplifiertoamplifier isolation (69dB at 1kHz). A wide range of supply voltages (±V to ±V) can be used to power the HA4741, making it compatible with almost any system including batterypowered equipment. HA4741/88 product and data sheets available upon request. HA14741 to 7 14 Ld CERDIP F14. HA4741 to 7 14 Ld PDIP E14. HA9P to 8 16 Ld SOIC M16. Pinouts HA4741 (PDIP, CERDIP) TOP VIEW HA4741 (SOIC) TOP VIEW OUT1 IN1 IN1 V IN IN OUT OUT4 IN4 IN4 V IN IN OUT OUT1 IN1 IN1 V IN IN OUT NC OUT4 IN4 IN4 V IN IN OUT NC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright Harris Corporation File Number 9.

2 HA4741 Absolute Maximum Ratings T A = o C Unless Otherwise Stated Supply Voltage Between V and V Terminals V Differential Input Voltage V Input Voltage V SUPPLY Output Short Circuit Duration (Note ) Indefinite Operating Conditions Temperature Range: HA o C to 1 o C HA o C to 7 o C HA o C to 8 o C Thermal Information Thermal Resistance (Typical, Note ) θ JA ( o C/W) θ JC ( o C/W) CERDIP Package 9 PDIP Package 17 N/A SOIC Package 96 N/A Maximum Junction Temperature (Ceramic Package, Note 1) o C Maximum Junction Temperature (Plastic Packages, Note 1) o C Maximum Storage Temperature Range o C to 1 o C Maximum Lead Temperature (Soldering 1s) o C (SOIC Lead Tips Only) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Maximum power dissipation, including output load, must be designed to maintain junction temperature below 17 o C for the ceramic package, and below 1 o C for the plastic packages.. θ JA is measured with the component mounted on an evaluation PC board in free air.. One amplifier may be shorted to ground indefinitely. Electrical Specifications V SUPPLY = ±1V, Unless Otherwise Specified TEST TEMP. HA4741 HA4741 (NOTE 4) HA47419 PARAMETER CONDITIONS ( o C) MIN TYP MAX MIN TYP MAX MAX UNITS INPUT CHARACTERISTICS Offset Voltage. 1 mv Full mv Average Offset Voltage Drift Full µv/ o C Bias Current 6 6 na Full 4 4 na Offset Current 1 na Full na Common Mode Range Full ±1 ±1 V Differential Input Resistance.. MΩ Input Voltage Noise f = 1kHz 9 9 nv/ Hz TRANSFER CHARACTERISTICS Large Signal Voltage Gain V OUT = ±1V, 1 kv/v R L =kω Full 1 kv/v Common Mode Rejection Ratio db Full db Channel Separation (Note ) db Small Signal Bandwidth.... MHz OUTPUT CHARACTERISTICS Output Voltage Swing R L = 1kΩ Full ±1 ±1.7 ±1 ±1.7 V Output Voltage Swing R L = kω Full ±1 ±1. ±1 ±1. V Full Power Bandwidth (Notes 6, 7) khz Output Current V OUT = ±1V Full ± ±1 ± ±1 ma Output Resistance Ω TRANSIENT RESPONSE R L = kω, C L = pf Rise Time V OUT = ±mv ns Overshoot % 9

3 HA4741 Electrical Specifications V SUPPLY = ±1V, Unless Otherwise Specified (Continued) PARAMETER TEST CONDITIONS TEMP. ( o C) HA4741 HA4741 (NOTE 4) HA47419 MIN TYP MAX MIN TYP MAX MAX Slew Rate V OUT = ±V ±1.6 ±1.6 V/µs POWER SUPPLY CHARACTERISTICS Supply Current ma Power Supply Rejection Ratio V S = ±V Full db NOTES: 4. Typical and Minimum specifications for the 9 version are the same as those for the version.. Referred to input; f = 1kHz, R S = 1kΩ, V IN = 1mV PEAK. 6. V OUT = ±1V, R L = kω. 7. Full power bandwidth guaranteed based upon slew rate measurement: FPBW = S.R./π V PEAK. UNITS Test Circuit and Waveforms V INPUT V V OUT V IN pf kω V OUTPUT V Volts = V/Div., Time = µs/div. FIGURE 1. SMALL AND LARGE SIGNAL TEST CIRCUIT FIGURE. LARGE SIGNAL RESPONSE mv Volts = 4mV/Div., Time = 1ns/Div. FIGURE. SMALL SIGNAL RESPONSE 9

4 HA4741 Schematic Diagram V R 1 K Q 1 Q Q V IN Q 1 Q 1 R 6 8 R 8 V IN Q4 Q Q 1 1 R 7 8 V OUT R K T 1 Q 7 C 1 Q1 Q 14 Q 6 D 1 Q 8 R 1.6K R 18K Q 9 R 4 K Q 11 V Typical Performance Curves V SUPPLY = ±1V, T A = o C, Unless Otherwise Specified OPENLOOP VOLTAGE GAIN (db) GAIN PHASE R L = K C L = pf K 1K 1K 1M 1M FREQUENCY (Hz) FIGURE 4. OPEN LOOP FREQUENCY RESPONSE PHASE (DEGREES) OUTPUT VOLTAGE SWING (V PP ) V O = 8V V O = 18V V O = 8V V O = V V S = ±1V V S = ±1V V S = ±V V S = ±V (VOLTAGE FOLLOWER) R L = C L = pf 1 1K 1K 1K 1M FREQUENCY (Hz) FIGURE. OUTPUT VOLTAGE SWING vs FREQUENCY NORMALIZED AC PARAMETERS REFERRED TO VALUE AT ±1V SLEW RATE BANDWIDTH BANDWIDTH ± ±1 ±1 ± SUPPLY VOLTAGE (V) NORMALIZED VALUE REFERRED TO o C SLEW RATE TEMPERATURE ( o C) BANDWIDTH FIGURE 6. NORMALIZED AC PARAMETERS vs SUPPLY VOLTAGE FIGURE 7. NORMALIZED AC PARAMETERS vs TEMPERATURE 94

5 HA4741 Typical Performance Curves V SUPPLY = ±1V, T A = o C, Unless Otherwise Specified (Continued) INPUT NOISE VOLTAGE (nv/ Hz) 1 1 VOLTAGE NOISE CURRENT NOISE INPUT NOISE CURRENT (pa/ Hz) PHASE MARGIN (DEGREES) R L = K UNITY GAIN BANDWIDTH (MHz) 1 1 1K 1K 1K FREQUENCY (Hz) FIGURE 8. INPUT NOISE vs FREQUENCY , 1, LOAD CAPACITANCE (pf) FIGURE 9. SMALL SIGNAL BANDWIDTH AND PHASE MARGIN vs LOAD CAPACITANCE 1 OUTPUT VOLTAGE (V PP ) 1 1 CURRENT (na) OFFSET CURRENT BIAS CURRENT 1 1K 1K 1K LOAD RESISTANCE (Ω) TEMPERATURE ( o C) FIGURE 1. MAXIMUM OUTPUT VOLTAGE SWING vs LOAD RESISTANCE FIGURE 11. INPUT BIAS AND OFFSET CURRENT vs TEMPERATURE POWER CONSUMPTION (mw) V S = ±1 V S = ±1 V S = ± TEMPERATURE ( o C) FIGURE 1. POWER CONSUMPTION vs TEMPERATURE 9

6 HA4741 Die Characteristics DIE DIMENSIONS: 87 mils x 7 mils x 19 mils 1µm x 191µm x 48µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ±kå PASSIVATION: SUBSTRATE POTENTIAL (Powered Up): V TRANSISTOR COUNT: 7 PROCESS: Junction Isolated Bipolar/JFET Type: Nitride Thickness: 7kÅ ±.7kÅ Metallization Mask Layout HA4741 IN4 IN4 V IN IN OUT4 OUT OUT1 OUT IN1 IN1 V IN IN 96