RC4741 General Purpose Operation Amplifier

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1 General Purpose Operation Amplifier Features Unity gain bandwidth 3. MHz High slew rate 1.6 V/mS Low noise voltage 9 nv/öhz Input offset voltage. mv Input bias current 6 na Indefinite short circuit protection No crossover distortion Internal compensation Wide power supply range ±2V to ±2V Applications Universal active filters Audio amplifiers Battery powered equipment Package 14 pin DIP Description The is a monolithic integrated circuit, consisting of four independent operational amplifiers constructed with the planar epitaxial process. A wide range of supply voltages (±2V to ±2V) can be used to power the, making it compatible with almost any system including battery powered equipment. These amplifiers feature AC and DC performance which exceed that of the 741 type amplifiers. Its superior bandwidth, slew rate and noise characteristics make it an excellent choice for active filter or audio amplifier applications. Block Diagram Output (A) Output (D) Input (A) A D Input (D) +Input (A) +Input (D) +Input (B) +Input (C) Input (B) B C Input (C) Output (B) Output (C) Rev..9.1

2 Absolute Maximum Ratings (beyond which the device may be damaged) 1 Parameter Min Typ Max Units Supply Voltage ±2 V Input Voltage 2 ±1 V Differential Input Voltage 3 V PDTA < C PDIP 468 mw CerDIP 142 SOIC 3 Output Short Circuit Duration 3 Indefinite Junction Temperature PDIP, SOIC 12 C CerDIP 17 Storage Temperature -6 1 C Operating Temperature RM C 7 Lead Soldering Temperature 6 sec, DIP 3 C 1 sec, SOIC 26 Notes: 1. Functional operation under any of these conditions is NOT implied. Performance and reliability are guaranteed only if Operating Conditions are not exceeded. 2. For supply voltages less than ±1V, the absolute maximum input voltage is equal to the supply voltage. 3. Short circuit to ground on one amplifier only. Operating Conditions Parameter Min Typ Max Units qjc Thermal resistance CerDIP 6 C/W qja Thermal resistance PDIP 16 C/W CerDIP 12 SOIC 2 For TA > C Derate at PDIP 6.2 mw/ C CerDIP 8.38 SOIC. 2

3 PRODUCT SPECIFICATION Electrical Characteristics (VS = ±1V and TA = 2 C unless otherwise specified) RM4741 Parameters Test Conditions Min Typ Max Min Typ Max Units Input Offset Voltage RS 1kW mv Input Offset Current na Input Bias Current na Input Resistance.. MW Large Signal Voltage Gain RL ³ 2kW, 1 2 V/mV VOUT ±1V Input Voltage Range ±12 ±12 V Output Resistance 3 3 W Output Current VOUT ±1V ± ±1 ± ±1 ma Common Mode RS 1kW 8 8 db Rejection Ratio DV = ± Supply Current (All Amplifiers) ma Transient Response Rise Time 7 7 ns Overshoot 2 2 % Slew Rate V/mS Unity Gain Bandwidth MHz Power Bandwidth VOUT = 2Vp-p, 2 2 khz RL = 2k Input Noise Voltage Density F = 1kHz nv/ ÖHz Channel Separation db Electrical Characteristics (VS = ±1V, RM = - C TA +12 C, RC = C TA + 7 C) RM4741 Parameters Test Conditions Min Typ Max Min Typ Max Units Input Offset Voltage RS 1kW mv Input Offset Current 7 1 na Input Bias Current 32 4 na Large Signal RL ³ 2kW 2 1 V/mV Voltage Gain VOUT ±1V Output Voltage Swing RL ³ 1kW ±12 ±13.7 ±12 ±13.7 RL ³ 2kW ±1 ±12. ±1 ±12. Supply Current (All Amplifiers) 1 1 ma Average Input Offset Voltage Drift.. mv/ C Common Mode Rejection Ratio RS 1kW, db DV ±.V Power Supply Rejection Ratio RS 1kW, DV ±.V 8 8 db 3

4 Typical Performance Characteristics A VOL (db) Open Loop Gain, Phase vs. Frequency F A VOL R L = 2K C L = pf M 1M F (Deg) PSRR (db) PSRR vs. Temperature +V S -V S Channel Separation vs. Frequency CS (db) A 4741B 1 7 V OUT1 CS = 2 log V OUT2 V OUT2 1 VOUT1 1.3 Transient Response vs. Temperature 3 Input Noise Voltage vs. Frequency 1.4 Transient Response (Normalized to +2 C) e n (nv/ Hz) e n I N I N (PA/ Hz)

5 PRODUCT SPECIFICATION Typical Performance Characteristics (continued) SR, BW (Normalized to +2 C) Slew Rate, Bandwidth vs. Temperature SR BW SR, BW (Normalized to ±1V) Slew Rate, Bandwidth vs. Supply Voltage BW SR & BW ±2 ± ±1 ±1 ± V S /-V S (V) FM (Deg) Small Signal Phase Margin, Unity Gain Bandwidth vs. Load Capacitance FM R L = 2K BW C L (pf) BW (MHz) V OUT P-P (V) Output Voltage Swing vs. Frequency V 3 OUT P-P = 28V V S = ±1V V 1 OUT P-P = 18V V S = ±1V V OUT P-P = 8V V S = ±V V OUT P-P = 2V V S = ±2V 1. (Voltage Follower) R L = Open C L = pf.1 1 1M I B, I OS (na) Input Bias, Offset Current vs. Temperature I B I OS CMRR (db) CMRR vs. Temperature

6 Typical Performance Characteristics (continued) 3 Output Voltage Swing vs. Frequency 2 V OUT P-P (V) R L ( ) W 6-79 Schematic Diagram (1/4 shown) +V (4) S R1 49 Q2 Q3 Q1 (2,6,9,13) - Input + Input (3,,1,12) Q4 Q D2 R9 3 Q13 R 3K Q12 Q16 Q1 R6 2 R8 To Next Amplifier F1 (1,7,8,14) Output Q7 Q1 C1 1 pf Q17 R7 2 Q6 Q8 R3 18K Q9 R4 22K Q11 Q14 R2 D1 -V S (11)

7 Ordering Information Product Number Temperature Range Screening Package Package Marking M C to +7 C Commercial 14 pin Small Outline IC N C to +7 C 14 pin Plastic DIP RM4741D - C to +12 C 14 pin Ceramic DIP RM 4741D/883B - C to +12 C Military 14 pin Ceramic DIP Note: /883B suffix denotes Mil-Std-883, Level B processing. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 7/24/98.m 2 Stock#DS34741 Ó 1998 Fairchild Semiconductor Corporation

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