Quad Matched 741-Type Operational Amplifiers OP11

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1 a FEATURES Guaranteed V OS : 5 V Max Guaranteed Matched CMRR: 94 db Min Guaranteed Matched V OS : 75 V Max LM148/LM348 Direct Replacement Low Noise Silicon-Nitride Passivation Internal Frequency Compensation Low Crossover Distortion Continuous Short-Circuit Protection Low Input Bias Current GENERAL DESCRIPTION The OP11 provides four matched 741-type operational amplifiers in a single 14-lead DIP package. The OP11 is pin compatible with the LM148, LM348, RM4156, RM4158, and HA4741 amplifiers. The amplifier is matched for common-mode rejection ratio and offset voltage which is very important in designing instrumentation amplifiers. In addition, the amplifier is designed to have equal positive-going and negative-going slew rates. This is an important consideration for good audio system performance. The OP11 is ideal for use in designs requiring minimum space and cost while maintaining performance. Quad Matched 741-Type Operational Amplifiers OP11 PIN CONFIGURATIONS OUT A 1 IN A 2 +IN A 3 V+ 4 +IN B 5 IN B 6 OUT B 7 14-Lead Epoxy DIP (P Suffix) 14 OUT D 13 IN D 12 +IN D 11 V 1 +IN C 9 IN C 8 OUT C 14-Lead Hermetic DIP (Y Suffix) OUT A 1 IN A 2 +IN A 3 V+ 4 +IN B 5 IN B 6 OUT B 7 14 OUT D 13 IN D 12 +IN D 11 V 1 +IN C 9 IN C 8 OUT C V+ IN +IN OUTPUT V Figure 1. Simplified Schematic Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 916, Norwood, MA , U.S.A. Tel: 781/ Fax: 781/ Analog Devices, Inc., 22

2 OP11 SPECIFICATIONS ELECTRICAL CHARACTERISTICS V S = 15 V,, unless otherwise noted) OP11A/OP11E OP11F OP11G Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit Input Offset Voltage V OS R S = 1 kw mv Input Offset Current I OS na Input Bias Current I B na Input Resistance Differential Mode 1 R IN MW Input Voltage Range IVR ± 12 ± 13 ± 12 ± 13 ± 12 ± 13 V Common-Mode CMRR Rejection Ratio V CM = ± 12 V, R S = 1 kw db Power Supply V S = ± 5 V to ± 15 V, Rejection Ratio PSRR R S 1 kw mv/v Output Voltage Swing V O R L = 2 kw ±11 ± 13 ± 11 ± 13 ± 11 ± 13 V Large-Signal Voltage Gain A VO R L 2 kw, V O = ± 1 V V/mV Power Consumption 2 P d V O = V mw Input Noise Voltage e n p-p.1 Hz to 1 Hz mv p-p Input Noise Voltage e n f O = 1 Hz nv/ Hz Density f O = 1 Hz nv/ Hz f O = 1 MHz nv/ Hz Input Noise Current I n p-p.1 Hz to 1 Hz pa p-p Input Noise Current I n f O = 1 Hz pa/ Hz Density f O = 1 Hz pa/ Hz f O = 1 MHz pa/ Hz Channel Separation CS db Slew Rate 2 SR V/ms Large Signal Bandwidth 3 V O = 2 V p-p khz Closed-Loop Bandwidth 4 BW A VCL = MHz Rise Time 3 t f A V = 1, V IN = 5 mv ns Overshoot 3 OS % NOTES 1 Guaranteed by input bias current. 2 Total dissipation for all four amplifiers in package. 3 Sample tested. 4 Guaranteed by rise time. 2

3 ELECTRICAL CHARACTERISTICS V S = 15 V, 55 C T A 125 C for OP11A, C T A 7 C for OP11E, unless otherwise noted) OP11 OP11A OP11E Parameter Symbol Conditions Min Typ Max Min Typ Max Unit Input Offset Voltage V OS R S 1 kw mv Average Input Offset Voltage Drift 1 TCV OS R S 1 kw mv/ C Input Offset Current I OS na Average Input Offset Current Drift 1 TCI OS na/ C Input Bias Current I B na Input Voltage Range IVR ± 12 ± 13 ±12 ± 13 V Common-Mode Rejection Ratio CMRR V CM = ±12 V, R S 1 kw db Power Supply Rejection Ratio PSRR V S = ±5 V to ±15 V, R S 1 kw mv/v Large-Signal Voltage Gain A VO R L 2 kw, V O = ± 1 V V/mV Output Voltage Swing V O R L 2 kw ±11 ± 13 ±11 ± 13 V Power Consumption 2 P d V O = V mw NOTES 1 Guaranteed but not tested. 2 Total dissipation for all four amplifiers in package. ELECTRICAL CHARACTERISTICS (@ V S = 15 V, 4 C T A +85 C, R S 1, unless otherwise noted) OP11F OP11G Parameter Symbol Conditions Min Typ Max Min Typ Max Unit Input Offset Voltage V OS R S 1 kw mv Average Input Offset Voltage Drift TCV OS R S 1 kw mv/ C Input Offset Current I OS na Average Input Offset Current Drift 1 TCI OS na/ C Input Bias Current I B na Input Voltage Range IVR ± 12 ± 13 ±12 ± 13 V Common-Mode Rejection Ratio CMRR V CM = ±12 V, R S 1 kw db Power Supply Rejection Ratio PSRR V S = ±5 V to ±15 V, R S 1 kw mv/v Large-Signal Voltage Gain A VO R L 2 kw, V O = ± 1 V V/mV Output Voltage Swing V O R L 2 kw ±11 ± 13 ±11 ± 13 V Power Consumption 2 P d V O = V mw NOTES 1 Guaranteed but not tested. 2 Total dissipation for all four amplifiers in package. 3

4 OP11 ABSOLUTE MAXIMUM RATINGS* Supply Voltage (V S ) ±22 V Input Voltage* Supply Voltage Differential Input Voltage ±3 V Output Short-Circuit Duration Continuous (One Amp Only) Storage Temperature Range Y Package C to +15 C P Package C to +125 C Lead Temperature Range (Soldering, 6 sec) C Operating Temperature Range OP11A C to +125 C OP11E C to 7 C OP11F, OP11G C to +85 C *Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. Package Type JA * JC Unit 14-Lead Plastic DIP (P) C/W 14-Lead Hermetic DIP (Y) C/W *q JA is specified for worst-case conditions, i.e., q JA is specified for device in socket for CERDIP and P-DIP packages. ORDERING GUIDE Temperature Package Package Model Range Description Option OP11AY* 4 C to +125 C 14-Lead CERDIP Y-14 OP11EP 4 C to +125 C 14-Lead Epoxy DIP P-14 OP11EY* C to 85 C 14-Lead CERDIP Y-14 OP11FP* 4 C to 85 C 14-Lead Epoxy DIP P-14 OP11GP 4 C to 85 C 14-Lead Epoxy DIP P-14 *Not for new designs. Obsolete April 22. For Military processed devices, please refer to the Standard Microcircuit Drawing (SMD) available at SMD Part Number ADI Equivalent A OP11ARCMDA CA OP11AYMDA MATCHING CHARACTERISTICS (@ V S = 15 V,, R S 1, unless otherwise noted) OP11A, OP11E OP11F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit Input Offset Voltage Match DV OS mv Common-Mode Rejection Ratio Match DCMRR V CM = ±12 V mv/v V CM = ±12 V db MATCHING CHARACTERISTICS (@ V S = 15 V, 55 C T A +125 C for OP11A, C T A 7 C for OP11E, 4 C T A +85 C for OP11F, R S 1, unless otherwise noted) OP11A, OP11E OP11F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit Input Offset Voltage Match DV OS mv Common-Mode Rejection Ratio Match DCMRR V CM = ±12 V mv/v V CM = ±12 V db CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP11 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE 4

5 Typical Performance Characteristics OP OFFSET VOLTAGE mv OPEN-LOOP GAIN V/mV TPC 1. Input Offset Voltage vs. Temperature TPC 4. Open-Loop Gain vs. Temperature 2 12 INPUT OFFSET CURRENT na OPEN-LOOP GAIN db GAIN PHASE C L = 1pF PHASE LAG Degrees TPC 2. Offset Current vs. Temperature k 1k 1k 1M 1M TPC 5. Open-Loop Gain and Phase vs. Frequency INPUT BIAS CURRENT na NORMALIZED VALUE REFERRED TO 25 C SLEW RATE BANDWIDTH TPC 3. Bias Current vs. Temperature TPC 6. Normalized Slew Rate and Bandwidth vs. Temperature 5

6 OP11 OPEN-LOOP GAIN V/mV CHANNEL SEPARATION db POWER SUPPLY VOLTAGE V TPC 7. Open-Loop Gain vs. Supply Voltage 1 1 1k 1k 1k TPC 1. Channel Separation vs. Frequency CMRR db VOLTAGE NOISE DENSITY nv/ Hz 1k k 1k 1k TPC 8. CMRR vs. Frequency k 1k TPC 11. Voltage Noise Density vs. Frequency PSRR db CURRENT NOISE DENSITY pa/ Hz k 1k 1k TPC 9. PSRR vs. Frequency k 1k TPC 12. Noise Current Density vs. Frequency 6

7 OP11 16 OUTPUT VOLTAGE mv 2 2 C L = 1pF OUTPUT VOLTAGE SWING V POSITIVE SWING NEGATIVE SWING TIME ns TPC 13. Transient Response LOAD RESISTANCE TO GROUND k TPC 16. Output Voltage vs. Load Resistance OUTPUT VOLTAGE V C L = 1pF QUIESCENT CURRENT ma TIME s TPC 14. Voltage Follower Pulse Response TOTAL SUPPLY VOLTAGE V TPC 17. Quiescent Current vs. Supply Voltage OUTPUT VOLTAGE PEAK-TO-PEAK V 28 (27) POWER CONSUMPTION mw k 1k 1k 1M TPC 15. Maximum Output Swing vs. Frequency TPC 18. Power Consumption vs. Temperature 7

8 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 14-Lead Epoxy DIP (P Suffix) PIN 1.21 (5.33) MAX.16 (4.6).115 (2.93).795 (2.19).725 (18.42) (2.54) BSC.22 (.558).14 (.356).7 (1.77).45 (1.15).28 (7.11).24 (6.1).6 (1.52).15 (.38).13 (3.3) MIN SEATING PLANE.325 (8.25).3 (7.62).15 (.381).8 (.24).195 (4.95).115 (2.93) C /2(A) 14-Lead Hermetic DIP (Y Suffix).5 (.13) MIN.98 (2.49) MAX PIN (5.8) MAX.2 (5.8).125 (3.18).23 (.58).14 (.36) (2.54) BSC.785 (19.94) MAX.7 (1.78).3 (.76).31 (7.87).22 (5.59).6 (1.52).15 (.38).15 (3.81) MIN SEATING PLANE.32 (8.13).29 (7.37) (.38).8 (.2) Revision History Location Page Data Sheet changed from REV. to. Change OP-9/OP-11 to OP Global Edits to PIN CONNECTIONS Edits to Figure Edits to ABSOLUTE MAXIMUM RATINGS Edits to ORDERING GUIDE Edits to SPEC TABLES Deletion of DICE CHARACTERISTICS Deletion of WAFER TEST LIMITS Table Deletion of TYPICAL ELECTRICAL CHARACTERISTICS Table PRINTED IN U.S.A. 8