Ultralow Offset Voltage Operational Amplifier OP07
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1 FEATURES Low VOS: 5 μv maximum Low VOS drift:. μv/ C maximum Ultrastable vs. time:.5 μv per month maximum Low noise:. μv p-p maximum Wide input voltage range: ± V typical Wide supply voltage range: ± V to ±8 V 5 C temperature-tested dice APPLICATIONS Wireless base station control circuits Optical network control circuits Instrumentation Sensors and controls Thermocouples Resistor thermal detectors (RTDs) Strain bridges Shunt current measurements Precision filters GENERAL DESCRIPTION The has very low input offset voltage (5 μv maximum for E) that is obtained by trimming at the wafer stage. These low offset voltages generally eliminate any need for external nulling. The also features low input bias current (± na for the E) and high open-loop gain ( V/mV for the E). The low offset and high open-loop gain make the particularly useful for high gain instrumentation applications. Ultralow Offset Voltage Operational Amplifier PIN CONFIGURATION V OS TRIM 8 V OS TRIM IN V IN OUT V 5 NC NC = NO CONNECT Figure. The wide input voltage range of ± V minimum combined with a high CMRR of db (E) and high input impedance provide high accuracy in the noninverting circuit configuration. Excellent linearity and gain accuracy can be maintained even at high closed-loop gains. Stability of offsets and gain with time or variations in temperature is excellent. The accuracy and stability of the, even at high gain, combined with the freedom from external nulling have made the an industry standard for instrumentation applications. The is available in two standard performance grades. The E is specified for operation over the C to C range, and the C is specified over the C to 85 C temperature range. The is available in epoxy 8-lead PDIP and 8-lead narrow SOIC packages. For CERDIP and TO-99 packages and standard microcircuit drawing (SMD) versions, see the OP. - V RA RA (OPTIONAL NULL) 8 RB RB C R Q9 NONINVERTING INPUT INVERTING INPUT R R Q5 Q Q Q Q Q Q Q Q Q8 Q Q Q Q Q5 Q9 C R5 Q Q C Q Q Q Q Q5 Q8 R9 OUT R Q Q V RA AND RB ARE ELECTRONICALLY ADJUSTED ON CHIP AT FACTORY FOR MINIMUM INPUT OFFSET VOLTAGE. R R8 - Figure. Simplified Schematic Rev. G Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9, Norwood, MA -9, U.S.A. Tel: Fax: Analog Devices, Inc. All rights reserved.
2 * PRODUCT PAGE QUICK LINKS Last Content Update: // COMPARABLE PARTS View a parametric search of comparable parts. EVALUATION KITS EVAL-OPAMP- Evaluation Board DOCUMENTATION Application Notes AN-5: Is Still Evolving AN-9: Using the Analog Devices Active Filter Design Tool : Ultralow Offset Voltage Operational Amplifier Data Sheet Product Highlight Amplifier pricing where you want it, SOFTWARE AND SYSTEMS REQUIREMENTS JAN to Generic Cross Reference TOOLS AND SIMULATIONS Analog Filter Wizard Analog Photodiode Wizard DESIGN RESOURCES Material Declaration PCN-PDN Information Quality And Reliability Symbols and Footprints DISCUSSIONS View all EngineerZone Discussions. SAMPLE AND BUY Visit the product page to see pricing options. TECHNICAL SUPPORT Submit a technical question or find your regional support number. DOCUMENT FEEDBACK Submit feedback for this data sheet. This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not trigger a change to either the revision number or the content of the product data sheet. This dynamic page may be frequently modified.
3 TABLE OF CONTENTS Features... Applications... General Description... Pin Configuration... Revision History... Specifications... E Electrical Characteristics... C Electrical Characteristics... Absolute Maximum Ratings... Thermal Resistance... ESD Caution... Typical Performance Characteristics... Typical Applications... Applications Information... Outline Dimensions... Ordering Guide... REVISION HISTORY / Rev. F. to Rev G Changes to Features Section... 8/ Rev. E. to Rev F Changes to Ordering Guide... /9 Rev. D. to Rev E Changes to Figure 9 Caption... Changes to Ordering Guide... / Rev. C. to Rev D Changes to Features... Changes to General Description... Changes to Specifications Section... Changes to Table... Changes to Figure and Figure 8... Changes to Figure and Figure... 8 Changes to Figure... 9 Changes to Figure to Figure 5... Changes to Figure and Figure... Replaced Figure 8... Changes to Applications Information Section... Updated Outline Dimensions... Changes to Ordering Guide... 8/ Rev. B to Rev. C Changes to E Electrical Specifications... Changes to C Electrical Specifications... Edits to Ordering Guide... 5 Edits to Figure... 9 Updated Outline Dimensions... / Rev. A to Rev. B Updated Package Titles... Universal Updated Outline Dimensions... / Rev. to Rev. A Edits to Features... Edits to Ordering Guide... Edits to Pin Connection Drawings... Edits to Absolute Maximum Ratings... Deleted Electrical Characteristics... Deleted D Column from Electrical Characteristics... 5 Edits to TPCs... 9 Edits to High-Speed, Low VOS Composite Amplifier... 9 Rev. G Page of
4 SPECIFICATIONS E ELECTRICAL CHARACTERISTICS VS = ±5 V, unless otherwise noted. Table. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS TA = 5 C Input Offset Voltage VOS 5 μv Long-Term VOS Stability VOS/Time..5 μv/month Input Offset Current IOS.5.8 na Input Bias Current IB ±. ±. na Input Noise Voltage en p-p. Hz to Hz.5. μv p-p Input Noise Voltage Density en fo = Hz. 8. nv/ Hz fo = Hz.. nv/ Hz fo = khz 9.. nv/ Hz Input Noise Current In p-p pa p-p Input Noise Current Density In fo = Hz..8 pa/ Hz fo = Hz.. pa/ Hz fo = khz.. pa/ Hz Input Resistance, Differential Mode RIN 5 5 MΩ Input Resistance, Common Mode RINCM GΩ Input Voltage Range IVR ± ± V Common-Mode Rejection Ratio CMRR VCM = ± V db Power Supply Rejection Ratio PSRR VS = ± V to ±8 V 5 μv/v Large Signal Voltage Gain AVO RL kω, VO = ± V 5 V/mV RL 5 Ω, VO = ±.5 V, VS = ± V 5 V/mV C TA C Input Offset Voltage VOS 5 μv Voltage Drift Without External Trim TCVOS.. μv/ C Voltage Drift with External Trim TCVOSN RP = kω.. μv/ C Input Offset Current IOS.9 5. na Input Offset Current Drift TCIOS 8 5 pa/ C Input Bias Current IB ±.5 ±5.5 na Input Bias Current Drift TCIB 5 pa/ C Input Voltage Range IVR ± ±.5 V Common-Mode Rejection Ratio CMRR VCM = ± V db Power Supply Rejection Ratio PSRR VS = ± V to ±8 V μv/v Large Signal Voltage Gain AVO RL kω, VO = ± V 8 5 V/mV OUTPUT CHARACTERISTICS TA = 5 C Output Voltage Swing VO RL kω ±.5 ±. V RL kω ±. ±.8 V RL kω ±.5 ±. V C TA C Output Voltage Swing VO RL kω ± ±. V Rev. G Page of
5 Parameter Symbol Conditions Min Typ Max Unit DYNAMIC PERFORMANCE TA = 5 C Slew Rate SR RL kω.. V/μs Closed-Loop Bandwidth BW AVOL = 5.. MHz Open-Loop Output Resistance RO VO =, IO = Ω Power Consumption Pd VS = ±5 V, No load 5 mw VS = ± V, No load mw Offset Adjustment Range RP = kω ± mv Input offset voltage measurements are performed by automated test equipment approximately.5 seconds after application of power. Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first days of operation. Excluding the initial hour of operation, changes in VOS during the first operating days are typically.5 μv. Refer to the Typical Performance Characteristics section. Parameter is sample tested. Sample tested. Guaranteed by design. 5 Guaranteed but not tested. C ELECTRICAL CHARACTERISTICS VS = ±5 V, unless otherwise noted. Table. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS TA = 5 C Input Offset Voltage VOS 5 μv Long-Term VOS Stability VOS/Time.. μv/month Input Offset Current IOS.8. na Input Bias Current IB ±.8 ±. na Input Noise Voltage en p-p. Hz to Hz.8.5 μv p-p Input Noise Voltage Density en fo = Hz.5. nv/ Hz fo = Hz..5 nv/ Hz fo = khz nv/ Hz Input Noise Current In p-p 5 5 pa p-p Input Noise Current Density In fo = Hz.5.9 pa/ Hz fo = Hz.5. pa/ Hz fo = khz..8 pa/ Hz Input Resistance, Differential Mode RIN 8 MΩ Input Resistance, Common Mode RINCM GΩ Input Voltage Range IVR ± ± V Common-Mode Rejection Ratio CMRR VCM = ± V db Power Supply Rejection Ratio PSRR VS = ± V to ±8 V μv/v Large Signal Voltage Gain AVO RL kω, VO = ± V V/mV RL 5 Ω, VO = ±.5 V, VS = ± V V/mV C TA 85 C Input Offset Voltage VOS 85 5 μv Voltage Drift Without External Trim TCVOS.5.8 μv/ C Voltage Drift with External Trim TCVOSN RP = kω.. μv/ C Input Offset Current IOS. 8. na Input Offset Current Drift TCIOS 5 pa/ C Input Bias Current IB ±. ±9. na Input Bias Current Drift TCIB 8 5 pa/ C Input Voltage Range IVR ± ±.5 V Common-Mode Rejection Ratio CMRR VCM = ± V 9 db Power Supply Rejection Ratio PSRR VS = ± V to ±8 V 5 μv/v Large Signal Voltage Gain AVO RL kω, VO = ± V V/mV Rev. G Page of
6 Parameter Symbol Conditions Min Typ Max Unit OUTPUT CHARACTERISTICS TA = 5 C Output Voltage Swing VO RL kω ±. ±. V RL kω ±.5 ±.8 V RL kω ±. V C TA 85 C Output Voltage Swing VO RL kω ± ±. V DYNAMIC PERFORMANCE TA = 5 C Slew Rate SR RL kω.. V/μs Closed-Loop Bandwidth BW AVOL = 5.. MHz Open-Loop Output Resistance RO VO =, IO = Ω Power Consumption Pd VS = ±5 V, No load 8 5 mw VS = ± V, No load 8 mw Offset Adjustment Range RP = kω ± mv Input offset voltage measurements are performed by automated test equipment approximately.5 seconds after application of power. Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first days of operation. Excluding the initial hour of operation, changes in VOS during the first operating days are typically.5 μv. Refer to the Typical Performance Characteristics section. Parameter is sample tested. Sample tested. Guaranteed by design. 5 Guaranteed but not tested. Rev. G Page 5 of
7 ABSOLUTE MAXIMUM RATINGS Table. Parameter Ratings Supply Voltage (VS) ± V Input Voltage ± V Differential Input Voltage ± V Output Short-Circuit Duration Indefinite Storage Temperature Range S and P Packages 5 C to 5 C Operating Temperature Range E C to C C C to 85 C Junction Temperature 5 C Lead Temperature, Soldering ( sec) C For supply voltages less than ± V, the absolute maximum input voltage is equal to the supply voltage. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θja is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table. Thermal Resistance Package Type θja θjc Unit 8-Lead PDIP (P-Suffix) C/W 8-Lead SOIC_N (S-Suffix) 58 C/W ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. G Page of
8 TYPICAL PERFORMANCE CHARACTERISTICS OPEN-LOOP GAIN (V/mV) TEMPERATURE ( C) Figure. Open-Loop Gain vs. Temperature - MAXIMUM ERROR REFERRED TO INPUT (mv) T A = 5 C C E k k k MATCHED OR UNMATCHED SOURCE RESISTANCE (Ω) Figure. Maximum Error vs. Source Resistance - ABSOLUTE CHANGE IN INPUT OFFSET VOLTAGE (µv) T A = 5 C, T A = C THERMAL SHOCK RESPONSE BAND DEVICE IMMERSED IN C OIL BATH 8 TIME (Seconds) - MAXIMUM ERROR REFERRED TO INPUT (mv) C T A C C E k k k MATCHED OR UNMATCHED SOURCE RESISTANCE (Ω) - Figure. Offset Voltage Change due to Thermal Shock Figure. Maximum Error vs. Source Resistance ABSOLUTE CHANGE IN INPUT OFFSET VOLTAGE (µv) T A = 5 C C E NONINVERTING INPUT BIAS CURRENT (na) AT V DIFF.V, I B na (C) T A = 5 C 5 TIME AFTER SUPPLY TURN-ON (Minutes) Figure 5. Warm-Up Drift -5 DIFFERENTIAL INPUT VALUE (V) Figure 8. Input Bias Current vs. Differential Input Voltage -8 Rev. G Page of
9 INPUT BIAS CURRENT (na) C E INPUT NOISE VOLTAGE (nv/ Hz) R S = R S = kω THERMAL NOISE SOURCE RESISTORS INCLUDED EXCLUDED R S = TEMPERATURE ( C) Figure 9. Input Bias Current vs. Temperature -9 T A = 5 C FREQUENCY (Hz) Figure. Total Input Noise Voltage vs. Frequency -.5 T A = 5 C INPUT OFFSET CURRENT (na) C RMS NOISE (µv) E TEMPERATURE ( C) Figure. Input Offset Current vs. Temperature REFERRED TO INPUT 5mV/CM AT OUTPUT -. k k k BANDWIDTH (Hz) Figure. Input Wideband Noise vs. Bandwidth,. Hz to Frequency Indicated - VOLTAGE (nv/div) CMRR (db) 9 8 C TIME (s/div) Figure. Low Frequency Noise - k k k FREQUENCY (Hz) Figure. CMRR vs. Frequency - Rev. G Page 8 of
10 C T A = 5 C 8 T A = 5 C PSRR (db) 9 8 CLOSED-LOOP GAIN (db) 5. k k FREQUENCY (Hz) Figure 5. PSRR vs. Frequency -5 k k k M M FREQUENCY (Hz) Figure 8. Closed-Loop Frequency Response for Various Gain Configurations -8 OPEN-LOOP GAIN (V/mV) 8 T A = 5 C PEAK-TO-PEAK AMPLITUDE (V) 8 8 T A = 5 C ±5 ± ±5 ± POWER SUPPLY VOLTAGE (V) Figure. Open-Loop Gain vs. Power Supply Voltage - k k k M FREQUENCY (Hz) Figure 9. Maximum Output Swing vs. Frequency -9 T A = 5 C V IN = ±mv T A = 5 C OPEN-LOOP GAIN (db) 8 MAXIMUM OUTPUT (V) 5 5 POSITIVE SWING NEGATIVE SWING. k k k M M FREQUENCY (Hz) Figure. Open-Loop Frequency Response - k k LOAD RESISTANCE TO GROUND (Ω) Figure. Maximum Output Voltage vs. Load Resistance - Rev. G Page 9 of
11 POWER CONSUMPTION (mw) T A = 5 C 5 TOTAL SUPPLY VOLTAGE, V TO V (V) Figure. Power Consumption vs. Power Supply - ABSOLUTE VALUE OF OFFSET VOLTAGE (µv) V OS TRIMMED TO < 5µV AT 5 C NULLING POT = kω C E TEMPERATURE ( C) C E Figure. Trimmed Offset Voltage vs. Temperature - OUTPUT SHORT-CIRCUIT CURRENT (ma) 5 5 T A = 5 C V IN (PIN ) = mv, V O = 5V V IN (PIN ) = mv, V O = 5V TOTAL DRIFT WITH TIME (µv) 8 8.µV/MONTH TREND LINE.µV/MONTH TREND LINE.µV/MONTH TREND LINE.µV/MONTH TREND LINE.µV/MONTH TREND LINE.µV/MONTH TREND LINE 5 TIME FROM OUTPUT BEING SHORTED (Minutes) Figure. Output Short-Circuit Current vs. Time TIME (Months) Figure 5. Offset Voltage Drift vs. Time -5 ABSOLUTE VALUE OF OFFSET VOLTAGE (µv) R S = Ω TEMPERATURE ( C) C E Figure. Untrimmed Offset Voltage vs. Temperature - Rev. G Page of
12 TYPICAL APPLICATIONS RF R E IN SUM MODE BIAS V R R R5 V C A V R kω R5 R kω AD5 OR AD85 V E O = E RF IN I B RF R Figure. Typical Offset Voltage Test Circuit E O - E IN ±V R V V FD D FD D R V V Figure 9. Absolute Value Circuit R R = R R E O V TO V -9 RF R E IN SUM MODE BIAS V E E E R R R R5.5kΩ R 5V C 5V E O - V C A R kω R R kω V E O = E RF IN I B RF R NOTES. PINOUT SHOWN FOR P PACKAGE C A V E O - Figure. Typical Low Frequency Noise Circuit Figure. High Speed, Low VOS Composite Amplifier R INPUT 8 V kω V OUT Figure 8. Optional Offset Nulling Circuit -8 E E E R R R R5.5kΩ NOTES. PINOUT SHOWN FOR P PACKAGE 5V 5V Figure. Adjustment-Free Precision Summing Amplifier E O - Rev. G Page of
13 SENDING JUNCTION REFERENCE JUNCTION R R R NOTES. PINOUT SHOWN FOR P PACKAGE R V V R R = R R Figure. High Stability Thermocouple Amplifier E O - APPLICATIONS INFORMATION The provides stable operation with load capacitance of up to 5 pf and ± V swings; larger capacitances should be decoupled with a 5 Ω decoupling resistor. Stray thermoelectric voltages generated by dissimilar metals at the contacts to the input terminals can degrade drift performance. Therefore, best operation is obtained when both input contacts are maintained at the same temperature, preferably close to the package temperature. R R R5 E IN ±V R V A V FD D FD D R V A V A V E O V TO V NOTES. PINOUT SHOWN FOR P PACKAGE Figure. Precision Absolute-Value Circuit - Rev. G Page of
14 OUTLINE DIMENSIONS 5. (.98).8 (.89). (.5).8 (.9) 8 5. (.) 5.8 (.8).5 (.98). (.) COPLANARITY. SEATING PLANE. (.5) BSC.5 (.88).5 (.5).5 (.). (.) 8.5 (.98). (.).5 (.9).5 (.99). (.5). (.5) 5 COMPLIANT TO JEDEC STANDARDS MS--AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body S-Suffix (R-8) Dimensions shown in millimeters and (inches) -A. (.).5 (9.).55 (9.). (5.) MAX.5 (.8). (.).5 (.9). (.5).8 (.). (.) 8. (.5) BSC 5.8 (.).5 (.5). (.).5 (.8) MIN SEATING PLANE.5 (.) MIN. (.5) MAX.5 (.8) GAUGE PLANE.5 (8.). (.8). (.). (.9) MAX.95 (.95). (.).5 (.9). (.). (.5).8 (.). (.8). (.5).5 (.) COMPLIANT TO JEDEC STANDARDS MS- CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS. Figure 5. 8-Lead Plastic Dual-in-Line Package [PDIP] P-Suffix (N-8) Dimensions shown in inches and (millimeters) -A Rev. G Page of
15 ORDERING GUIDE Model Temperature Range Package Description Package Option EPZ C to C 8-Lead PDIP N-8 (P-Suffix) CPZ C to 85 C 8-Lead PDIP N-8 (P-Suffix) CSZ C to 85 C 8-Lead SOIC_N R-8 (S-Suffix) CSZ-REEL C to 85 C 8-Lead SOIC_N R-8 (S-Suffix) CSZ-REEL C to 85 C 8-Lead SOIC_N R-8 (S-Suffix) Z = RoHS Compliant Part. Rev. G Page of
16 NOTES Rev. G Page 5 of
17 NOTES - Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D--/(G) Rev. G Page of
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a FEATURES High Common-Mode Rejection DC: 9 db typ Hz: 9 db typ khz: 8 db typ Ultralow THD:.% typ @ khz Fast Slew Rate: V/ s typ Wide Bandwidth: 7 MHz typ (G = /) Two Gain Levels Available: G = / or Low
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Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP282/OP482 FEATURES High slew rate: 9 V/μs Wide bandwidth: 4 MHz Low supply current: 2 μa/amplifier maximum Low offset voltage: 3 mv maximum
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Data Sheet Precision, Very Low Noise, Low Input Bias Current Operational Amplifiers AD8671/AD8672/AD8674 FEATURES Very low noise: 2.8 nv/ Hz, 77 nv p-p Wide bandwidth: 1 MHz Low input bias current: 12
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Improved Second Source to the EL ADEL FEATURES Ideal for Video Applications.% Differential Gain. Differential Phase. db Bandwidth to 5 MHz (G = +) High Speed 9 MHz Bandwidth ( db) 5 V/ s Slew Rate ns Settling
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Low Cost Micropower, Low Noise CMOS Rail-to-Rail, Input/Output Operational Amplifiers FEATURES Offset voltage: 2.2 mv maximum Low input bias current: pa maximum Single-supply operation:.8 V to 5 V Low
More informationVery Low Distortion, Precision Difference Amplifier AD8274
Very Low Distortion, Precision Difference Amplifier AD8274 FEATURES Very low distortion.2% THD + N (2 khz).% THD + N ( khz) Drives Ω loads Excellent gain accuracy.3% maximum gain error 2 ppm/ C maximum
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Ultralow Offset Voltage Dual Op Amp AD7 FEATURES Very high dc precision 3 μv maximum offset voltage.3 μv/ C maximum offset voltage drift.35 μv p-p maximum voltage noise (.1 Hz to 1 Hz) 5 million V/V minimum
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Very Low Distortion, Dual-Channel, High Precision Difference Amplifier AD8273 FEATURES ±4 V HBM ESD Very low distortion.25% THD + N (2 khz).15% THD + N (1 khz) Drives 6 Ω loads Two gain settings Gain of
More informationPrecision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608
Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES Low offset voltage: 65 μv maximum Low input bias currents: pa maximum Low noise: 8 nv/ Hz Wide
More information4 MHz, 7 nv/ Hz, Low Offset and Drift, High Precision Amplifier ADA EP
Enhanced Product FEATURES Low offset voltage and low offset voltage drift Maximum offset voltage: 9 µv at TA = 2 C Maximum offset voltage drift:.2 µv/ C Moisture sensitivity level (MSL) rated Low input
More informationPrecision Micropower Single Supply Operational Amplifier OP777
a FEATURES Low Offset Voltage: 1 V Max Low Input Bias Current: 1 na Max Single-Supply Operation: 2.7 V to 3 V Dual-Supply Operation: 1.35 V to 15 V Low Supply Current: 27 A/Amp Unity Gain Stable No Phase
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Single and Dual, Ultralow Distortion, Ultralow Noise Op Amps FEATURES Low noise:. nv/ Hz at khz Low distortion: db THD @ khz Input noise,. Hz to Hz:
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Rail-to-Rail, High Output Current Amplifier FEATURES Dual operational amplifier Voltage feedback Wide supply range from 3 V to 24 V Rail-to-rail output Output swing to within.5 V of supply rails High linear
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Low Voltage, Micropower, Quad Operational Amplifier FEATURES Single/dual-supply operation.6 V to 36 V ±0.8 V to ±8 V Single-supply operation; input and output voltage ranges include ground Low supply current:
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a FEATURES High DC Precision 75 V Max Offset Voltage V/ C Max Offset Voltage Drift 5 pa Max Input Bias Current.2 pa/ C Typical I B Drift Low Noise.5 V p-p Typical Noise,. Hz to Hz Low Power 6 A Max Supply
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More informationTABLE OF CONTENTS Features... Applications... Pin Configurations... General Description... Revision History... 2 Specifications... 3 Absolute Maximum
FEATURES Offset voltage: 2.5 mv maximum Single-supply operation: 2.7 V to 5.5 V Low noise: 8 nv/ Hz Wide bandwidth: 24 MHz Slew rate: V/μs Short-circuit output current: 2 ma No phase reversal Low input
More informationOP SPECIFICATIONS ELECTRICAL CHARACTERISTICS (V S = ± V, T A = C, unless otherwise noted.) OPA/E OPF OPG Parameter Symbol Conditions Min Typ Max Min T
a FEATURES Excellent Speed:. V/ms Typ Fast Settling (.%): ms Typ Unity-Gain Stable High-Gain Bandwidth: MHz Typ Low Input Offset Voltage: mv Max Low Offset Voltage Drift: mv/ C Max High Gain: V/mV Min
More informationOBSOLETE. High-Speed, Dual Operational Amplifier OP271 REV. A. Figure 1. Simplified Schematic (One of the two amplifiers is shown.
a FEATURES Excellent Speed:. V/ms Typ Fast Settling (.%): ms Typ Unity-Gain Stable High-Gain Bandwidth: MHz Typ Low Input Offset Voltage: mv Max Low Offset Voltage Drift: mv/ C Max High Gain: V/mV Min
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FEATURES ±4 V human body model (HBM) ESD High common-mode voltage range V to +6 V operating 3 V to +68 V survival Buffered output voltage Wide operating temperature range 8-Lead SOIC: 4 C to + C Excellent
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Data Sheet FEATURES Single-supply operation: 1.8 V to 5 V Offset voltage: 6 mv maximum Space-saving SOT-23 and SC7 packages Slew rate: 2.7 V/μs Bandwidth: 5 MHz Rail-to-rail input and output swing Low
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a FEATURES Low Offset Voltage: 100 V max Low Drift: 2 V/ C max Wide Gain Range 1 to 10,000 High Common-Mode Rejection: 115 db min High Bandwidth (G = 1000): 200 khz typ Gain Equation Accuracy: 0.5% max
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Precision Micropower, Low Noise CMOS Rail-to-Rail Input/Output Operational Amplifiers FEATURES Low offset voltage: μv max Low input bias current: 1 pa max Single-supply operation: 1.8 V to 5 V Low noise:
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a FEATURES Replaces Hybrid Amplifiers in Many Applications AC PERFORMANCE: Settles to 0.01% in 350 ns 100 V/ s Slew Rate 12.8 MHz Min Unity Gain Bandwidth 1.75 MHz Full Power Bandwidth at 20 V p-p DC PERFORMANCE:
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24 MHz Rail-to-Rail Amplifiers with Shutdown Option AD8646/AD8647/AD8648 FEATURES Offset voltage: 2.5 mv maximum Single-supply operation: 2.7 V to 5.5 V Low noise: 8 nv/ Hz Wide bandwidth: 24 MHz Slew
More informationLow Power, Wide Supply Range, Low Cost Unity-Gain Difference Amplifier AD8276
Low Power, Wide Supply Range, Low Cost Unity-Gain Difference Amplifier AD87 FEATURES Wide input range Rugged input overvoltage protection Low supply current: μa maximum Low power dissipation:. mw at VS
More informationZero Drift, Unidirectional Current Shunt Monitor AD8219
Zero Drift, Unidirectional Current Shunt Monitor FEATURES High common-mode voltage range 4 V to 8 V operating.3 V to +85 V survival Buffered output voltage Gain = 6 V/V Wide operating temperature range:
More informationGeneral-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544
General-Purpose CMOS Rail-to-Rail Amplifiers FEATURES Single-supply operation: 2.7 V to 5.5 V Low supply current: 45 μa/amplifier Wide bandwidth: MHz No phase reversal Low input currents: 4 pa Unity gain
More informationGeneral-Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544
General-Purpose CMOS Rail-to-Rail Amplifiers AD854/AD8542/AD8544 FEATURES Single-supply operation: 2.7 V to 5.5 V Low supply current: 45 μa/amplifier Wide bandwidth: MHz No phase reversal Low input currents:
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Preliminary Technical Data 0 MHz, 20 V/μs, G =, 0, 00, 000 i CMOS Programmable Gain Instrumentation Amplifier FEATURES Small package: 0-lead MSOP Programmable gains:, 0, 00, 000 Digital or pin-programmable
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1-Channel Gamma Buffer with VCOM Driver ADD871 FEATURES Single-supply operation: 4.5 V to 18 V Upper/lower buffers swing to VS/GND Gamma continuous output current: >1 ma VCOM peak output current: 25 ma
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a FEATURES True Single Supply Operation Output Swings Rail-to-Rail Input Voltage Range Extends Below Ground Single Supply Capability from V to V Dual Supply Capability from. V to 8 V Excellent Load Drive
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Single-Supply 42 V System Difference Amplifier FEATURES Ideal for current shunt applications High common-mode voltage range 2 V to +65 V operating 5 V to +68 V survival Gain = 50 Wide operating temperature
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Single-Supply, Rail-to-Rail, Low Power FET-Input Op Amp AD82 FEATURES True single-supply operation Output swings rail-to-rail Input voltage range extends below ground Single-supply capability from 5 V
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Low Cost Low Power Instrumentation Amplifier AD60 FEATURES Easy to use Gain set with one external resistor (Gain range to 0,000) Wide power supply range (±.3 V to ±8 V) Higher performance than 3 op amp
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High Common-Mode Voltage, Programmable Gain Difference Amplifier FEATURES High common-mode input voltage range ±2 V at VS = ± V Gain range. to Operating temperature range: 4 C to ±8 C Supply voltage range
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High Common-Mode Voltage Programmable Gain Difference Amplifier FEATURES High common-mode input voltage range ±12 V at VS = ±15 V Gain range.1 to 1 Operating temperature range: 4 C to ±85 C Supply voltage
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a FEATURES High Common-Mode Rejection DC: 100 db typ 60 Hz: 100 db typ 20 khz: 70 db typ 40 khz: 62 db typ Low Distortion: 0.001% typ Fast Slew Rate: 9.5 V/ s typ Wide Bandwidth: 3 MHz typ Low Cost Complements
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Single-Supply, Rail-to-Rail, Low Power, FET Input Op Amp AD82 FEATURES True single-supply operation Output swings rail-to-rail Input voltage range extends below ground Single-supply capability from 5 V
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Zero Drift, Digitally Programmable Instrumentation Amplifier AD8231-EP FEATURES Digitally/pin-programmable gain G = 1, 2, 4, 8, 16, 32, 64, or 128 Specified from 55 C to +125 C 5 nv/ C maximum input offset
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Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp AD822 FEATURES True single-supply operation Output swings rail-to-rail Input voltage range extends below ground Single-supply capability from 3 V
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FEATURES Ultralow noise.9 nv/ Hz.4 pa/ Hz. nv/ Hz at Hz Ultralow distortion: 93 dbc at 5 khz Wide supply voltage range: ±5 V to ±6 V High speed 3 db bandwidth: 65 MHz (G = +) Slew rate: 55 V/µs Unity gain
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a FEATURES Low Offset Voltage: 200 V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 ma: 2.5 nv/ Hz max Excellent Log Conformance: rbe = 0.6 max Matching
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Zero Drift, Bidirectional Current Shunt Monitor FEATURES High common-mode voltage range 4 V to 8 V operating.3 V to 85 V survival Buffered output voltage Gain = 2 V/V Wide operating temperature range:
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a FEATURES High Speed 41 MHz, 3 db Bandwidth 125 V/ s Slew Rate 8 ns Settling Time Input Bias Current of 2 pa and Noise Current of 1 fa/ Hz Input Voltage Noise of 12 nv/ Hz Fully Specified Power Supplies:
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High Voltage Current Shunt Monitor AD8211 FEATURES Qualified for automotive applications ±4 V HBM ESD High common-mode voltage range 2 V to +65 V operating 3 V to +68 V survival Buffered output voltage
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Dual, High Voltage Current Shunt Monitor AD823 FEATURES ±4 V HBM ESD High common-mode voltage range 2 V to +6 V operating 3 V to +68 V survival Buffered output voltage Wide operating temperature range
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FEATURES Ideal for current shunt applications High common-mode voltage range 2 V to +65 V operating 25 V to +75 V survival Gain = 50 V/V Wide operating temperature range: 40 C to +125 C for Y and W grade
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