HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS

Transcription

1 A M A A January 1997 SEMICONDUCTOR HGTP7N6C3D, HGT1S7N6C3D, HGT1S7N6C3DS 14A, 6V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features 14A, 6V at T C = 2 o C 6V Switching SOA Capability Typical Fall Time ns at T J = 1 o C Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTP7N6C3D, HGT1S7N6C3D and HGT1S7N6C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 2 o C and 1 o C. The IGBT used is developmental type TA4911. The diode used in anti-parallel with the IGBT is developmental type TA497. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTP7N6C3D TO-22AB G7N6C3D HGT1S7N6C3D TO-262AA G7N6C3D HGT1S7N6C3DS TO-263AB G7N6C3D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N6C3DS9A. Formerly Developmental Type TA Packaging (FLANGE) (FLANGE) GATE EMITTER Terminal Diagram JEDEC TO-22AB JEDEC TO-262AA JEDEC TO-263AB N-CHANNEL ENHANCEMENT MODE C G E EMITTER GATE EMITTER GATE (FLANGE) Absolute Maximum Ratings T C = 2 o C, Unless Otherwise Specified HGTP7N6C3D, HGT1S7N6C3D HGT1S7N6C3DS UNITS Collector-Emitter Voltage BV CES 6 V Collector Current Continuous At T C = 2 o C I C2 14 A At T C = 11 o C I C11 7 A Average Diode Forward Current at 11 o C I (AVG) 8 A Collector Current Pulsed (Note 1) I CM 6 A Gate-Emitter Voltage Continuous V GES ±2 V Gate-Emitter Voltage Pulsed V GEM ±3 V Switching Safe Operating Area at T J = 1 o C, Figure SSOA 4A at 48V Power Dissipation Total at T C = 2 o C P D 6 W Power Dissipation Derating T C > 2 o C W/ o C Operating and Storage Junction Temperature Range T J, T STG -4 to 1 o C Maximum Lead Temperature for Soldering T L 26 o C Short Circuit Withstand Time (Note 2) at V GE = 1V t SC 1 µs Short Circuit Withstand Time (Note 2) at V GE = 1V t SC 8 µs NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. V CE(PK) = 36V, T J = 12 o C, R GE = Ω. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright Harris Corporation File Number 41.1

2 HGTP7N6C3D, HGT1S7N6C3D, HGT1S7N6C3DS Electrical Specifications T C = 2 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage BV CES I C = 2µA, V GE = V V Collector-Emitter Leakage Current I CES V CE = BV CES T C = 2 o C µa V CE = BV CES T C = 1 o C ma Collector-Emitter Saturation Voltage V CE(SAT) I C = I C11, V GE = 1V T C = 2 o C V T C = 1 o C V Gate-Emitter Threshold Voltage V GE(TH) I C = 2µA, V CE = V GE T C = 2 o C V Gate-Emitter Leakage Current I GES V GE = ±2V - - ±2 na Switching SOA SSOA T J = 1 o C R G = Ω V GE = 1V L = 1mH V CE(PK) = 48V A V CE(PK) = 6V A Gate-Emitter Plateau Voltage V GEP I C = I C11, V CE =. BV CES V V GE = 1V nc On-State Gate Charge Q G(ON) I C = I C11, V CE =. BV CES V GE = 2V nc Current Turn-On Delay Time t D(ON)I T J = 1 o C ns Current Rise Time t RI I CE = I C11 V CE(PK) =.8 BV CES ns Current Turn-Off Delay Time t D(OFF)I V GE = 1V R G = Ω ns Current Fall Time t FI L = 1mH ns Turn-On Energy E ON µj Turn-Off Energy (Note 3) E OFF µj Diode Forward Voltage V EC I EC = 7A V Diode Reverse Recovery Time t rr I EC = 7A, di EC /dt = 2A/µs ns I EC = 1A, di EC /dt = 2A/µs ns Thermal Resistance R θjc IGBT o C/W Diode o C/W NOTE: 3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = A). The HGTP7N6C3D, HGT1S7N6C3D, and HGT1S7N6C3DS were tested per JEDEC standard No Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,73 4,417,38 4,43,792 4,443,931 4,466,176 4,16,143 4,32,34 4,67,641 4,87,713 4,98,461 4,6,948 4,618,872 4,62,211 4,631,64 4,639,74 4,639,762 4,641,162 4,644,637 4,682,19 4,684,413 4,694,313 4,717,679 4,743,92 4,783,69 4,794,432 4,81,986 4,83,33 4,89,4 4,89,47 4,81,66 4,823,176 4,837,66 4,86,8 4,883,767 4,888,627 4,89,143 4,91,127 4,94,69 4,933,74 4,963,

3 Typical Performance Curves HGTP7N6C3D, HGT1S7N6C3D, HGT1S7N6C3DS DUTY CYCLE <.%, V CE = 1V PULSE DURATION = 2µs T C = 1 o C T C = 2 o C T C = -4 o C V GE, GATE-TO-EMITTER VOLTAGE (V) 14 4 PULSE DURATION = 2µs, DUTY CYCLE <.%, 3 T C = 2 o C V GE = 1.V 12.V 7.V V 9.V 8.V 8.V 7.V FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS PULSE DURATION = 2µs DUTY CYCLE <.%, V GE = 1V T C = -4 o C T C = 1 o C T C = 2 o C PULSE DURATION = 2µs DUTY CYCLE <.%, V GE = 1V T C = -4 o C T C = 2 o C T C = 1 o C FIGURE 3. -EMITTER ON - STATE VOLTAGE FIGURE 4. -EMITTER ON - STATE VOLTAGE I CE, DC CURRENT (A) T C, CASE TEMPERATURE ( o C) V GE = 1V t SC, SHORT CIRCUIT WITHSTAND TIME (µs) 12 VCE = 36V, R GE = Ω, T J = 12 o C I SC t SC V GE, GATE-TO-EMITTER VOLTAGE (V) 14 I SC, PEAK SHORT CIRCUIT CURRENT (A) FIGURE. MAXIMUM DC CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3-24

4 HGTP7N6C3D, HGT1S7N6C3D, HGT1S7N6C3DS Typical Performance Curves (Continued) t D(ON)I, TURN-ON DELAY TIME (ns) T J = 1 o C, R G = Ω, L = 1mH, V CE(PK) = 48V V GE = 1V V GE = 1V t D(OFF)I, TURN-OFF DELAY TIME (ns) T J = 1 o C, R G = Ω, L = 1mH, V CE(PK) = 48V V GE = 1V or 1V FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF 2 T J = 1 o C, R G = Ω, L = 1mH, V CE(PK) = 48V 3 T J = 1 o C, R G = Ω, L = 1mH, V CE(PK) = 48V t RI, TURN-ON RISE TIME (ns) 1 1 V GE = 1V V GE = 1V t FI, FALL TIME (ns) V GE = 1V or 1V FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF FIGURE 1. TURN-OFF FALL TIME AS A FUNCTION OF E ON, TURN-ON ENERGY LOSS (µj) T J = 1 o C, R G = Ω, L = 1mH, V CE(PK) = 48V V GE = 1V V GE = 1V E OFF, TURN-OFF ENERGY LOSS (µj) 3 1 T J = 1 o C, R G = Ω, L = 1mH, V CE(PK) = 48V V GE = 1V or 1V FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF 3-2

5 HGTP7N6C3D, HGT1S7N6C3D, HGT1S7N6C3DS Typical Performance Curves (Continued) f MAX, OPERATING FREQUENCY (khz) 2 1 V GE = 1V 1 f MAX1 =./(t D(OFF)I + t D(ON)I ) f MAX2 = (P D - P C )/(E ON + E OFF ) P D = ALLOWABLE DISSIPATION P C = CONDUCTION DISSIPATION (DUTY FACTOR = %) R θjc = 2.1o C/W T J = 1 o C, T C = 7 o C R G = Ω, L = 1mH V GE = 1V FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF T J = 1 o C, V GE = 1V, R G = Ω, L = 1mH V CE(PK), -TO-EMITTER VOLTAGE (V) FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA C, CAPACITANCE (pf) C IES FREQUENCY = 1MHz 2 C C OES RES FIGURE 1. CAPACITANCE AS A FUNCTION OF - EMITTER VOLTAGE V CE, - EMITTER VOLTAGE (V) I G REF = 1.44mA, R L = Ω, T C = 2 o C Q G, GATE CHARGE (nc) V CE = 2V V CE = 4V V CE = 6V FIGURE 16. GATE CHARGE WAVEFORMS V GE, GATE-EMITTER VOLTAGE (V) Z θjc, NORMALIZED THERMAL RESPONSE SINGLE PULSE t 1, RECTANGULAR PULSE DURATION (s) P D t 1 t 2 DUTY FACTOR, D = t 1 / t 2 PEAK T J = (P D X Z θjc X R θjc ) + T C FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 3-26

6 HGTP7N6C3D, HGT1S7N6C3D, HGT1S7N6C3DS Typical Performance Curves (Continued) 3 3 T C = 2 o C, di EC /dt = 2A/µs I EC, FORWARD CURRENT (A) o C 1 o C 2 o C t R, RECOVERY TIMES (ns) t rr t A t B V EC, FORWARD VOLTAGE (V) FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP I EC, FORWARD CURRENT (A) FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT Test Circuit and Waveform L = 1mH 9% RHRD66 V GE 1% R G = Ω V CE E OFF EON + - V DD = 48V I CE 9% 1% t D(OFF)I t FI t RI t D(ON)I FIGURE 2. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS 3-27

7 HGTP7N6C3D, HGT1S7N6C3D, HGT1S7N6C3DS Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE ) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows f MAX1 or f MAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f MAX1 is defined by f MAX1 =./(t D(OFF)I + t D(ON)I ). Deadtime (the denominator) has been arbitrarily held to 1% of the on- state time for a % duty factor. Other definitions are possible. t D(OFF)I and t D(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JMAX. t D(OFF)I is important when controlling output ripple under a lightly loaded condition. f MAX2 is defined by f MAX2 = (P D - P C )/(E OFF + E ON ). The allowable dissipation (P D ) is defined by P D = (T JMAX - T C )/R θjc. The sum of device switching and conduction losses must not exceed P D. A % duty factor was used (Figure 13) and the conduction losses (P C ) are approximated by P C =(V CE x I CE )/2. E ON and E OFF are defined in the switching waveforms shown in Figure 21. E ON is the integral of the instantaneous power loss (I CE x V CE ) during turn-on and E OFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for E OFF ; i.e. the collector current equals zero (I CE = ). Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. ECCOSORBD LD26 is a Trademark of Emerson and Cumming, Inc. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on.. Gate Voltage Rating - Never exceed the gate-voltage rating of V GEM. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. All Harris Semiconductor products are manufactured, assembled and tested under ISO9 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 3-21 Melbourne, FL 3292 TEL: (47) FAX: (47) For general information regarding Harris Semiconductor and its products, call HARRIS EUROPE Harris Semiconductor Mercure Center 1, Rue de la Fusee 113 Brussels, Belgium TEL: (32) FAX: (32) ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #9-1 Singapore 1334 TEL: (6) FAX: (6) SEMICONDUCTOR 3-28