CA3096, CA3096A, CA3096C
|
|
- Meagan Lester
- 5 years ago
- Views:
Transcription
1 December 99 Applications Five-Independent Transistors - Three NPN and - Two PNP Differential Amplifiers DC Amplifiers Sense Amplifiers Level Shifters Timers Lamp and Relay Drivers Thyristor Firing Circuits Temperature Compensated Amplifiers Operational Amplifiers Ordering Information PART NUMBER (BRAND) TEMP. RANGE ( o C) PACKAGE PKG. NO. CA9AE - to Ld PDIP E. CA9AM (9A) - to Ld SOIC M. CA9AM9 (9A) Pinout - to Ld SOIC Tape and Reel (PDIP, SOIC) TOP VIEW M. CA9CE - to Ld PDIP E. CA9E - to Ld PDIP E. CA9M (9) - to Ld SOIC M. CA9M9 (9) - to Ld SOIC Tape and Reel Q Q Q Q Q 9 SUBSTRATE M. CA9, CA9A, CA9C Description NPN/PNP Transistor Arrays The CA9C, CA9, and CA9A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a separate connection. Independent connections for each transistor permit maximum flexibility in circuit design. Types CA9A, CA9, and CA9C are identical, except that the CA9A specifications include parameter matching and greater stringency in I CBO, I CEO, and V CE (SAT). The CA9C is a relaxed version of the CA9. Essential Differences CHARACTERISTIC CA9A CA9 CA9C V (BR)CEO (V) (Min) NPN PNP V (BR)CBO (V) (Min) NPN PNP h FE at ma NPN PNP h FE at µa PNP I CBO (na) (Max) NPN PNP I CEO (na) (Max) NPN PNP V CE SAT (V) (Max) NPN... V IO (mv) (Max) NPN - - PNP - - I IO (µa) (Max) NPN. - - PNP. - - CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. --INTERSIL or -- Copyright Intersil Corporation 999 File Number 9.
2 Absolute Maximum Ratings NPN PNP Collector-to-Emitter Voltage, V CEO CA9, CA9A V -V CA9C V -V Collector-to-Base Voltage, V CBO CA9, CA9A V -V CA9C V -V Collector-to-Substrate Voltage, V CIO (Note ) CA9, CA9A V - CA9C V - Emitter-to-Substrate Voltage, V EIO CA9, CA9A V CA9C V Emitter-to-Base Voltage, V EBO CA9, CA9A V -V CA9C V -V Collector Current, I C (All Types) ma -ma Operating Conditions Temperature Range o C to o C Thermal Information Thermal Resistance (Typical, Note ) θ JA ( o C/W) PDIP Package SOIC Package Maximum Power Dissipation (Each Transistor, Note )..... mw Maximum Junction Temperature (Plastic Package) o C Maximum Storage Temperature Range o C to o C Maximum Lead Temperature (Soldering s) o C (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES:. The collector of each transistor of the CA9 is isolated from the substrate by an integral diode. The substrate (Terminal ) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.. θ JA is measured with the component mounted on an evaluation PC board in free air.. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal resistances to calculate the junction temperature. Electrical Specifications For Equipment Design, At T A = o C TEST CA9 CA9A CA9C PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS DC CHARACTERISTICS FOR EACH NPN TRANSISTOR I CBO V CB = V, I E = na I CEO V CE = V, I B = na V (BR)CEO I C = ma, I B = V V (BR)CBO I C = µa, V I E = V (BR)CIO V (BR)EBO I CI = µa, I B = I E = I E = µa, I C = V V V Z I Z = µa V V CE SAT l C = ma, V I B = ma V BE (Note ) I C = ma, V h FE (Note ) V CE = V V BE / T (Note ) I C = ma, V CE = V mv/ o C DC CHARACTERISTICS FOR EACH PNP TRANSISTOR I CBO V CB = -V, I E = na
3 Electrical Specifications For Equipment Design, At T A = o C (Continued) I CEO PARAMETER V (BR)CEO V (BR)CBO V (BR)EBO V (BR)ElO V CE SAT V BE (Note ) h FE (Note ) V BE / T (Note ) TEST CONDITIONS V CE = -V, I B = I C = -µa, I B = I C = -µa, I E = I E = -µa, I C = I EI = µa, I B = I C = I C = -ma, I B = -µa I C = -µa, V CE = -V I C = -µa, V CE = -V I C = -ma, V CE = -V I C = -µa, V CE = -V na V V V V V V mv/ o C I CBO Collector-Cutoff Current V Z Emitter-to-Base Zener Voltage I CEO Collector-Cutoff Current V CE SAT Collector-to-Emitter Saturation Voltage V (BR)CEO Collector-to-Emitter Breakdown Voltage V BE Base-to-Emitter Voltage V (BR)CBO Collector-to-Base Breakdown Voltage h FE DC Forward-Current Transfer Ratio V (BR)CIO Collector-to-Substrate Breakdown Voltage V BE / T Magnitude of Temperature Coefficient: V (BR)EBO Emitter-to-Base Breakdown Voltage (for each transistor) NOTE:. Actual forcing current is via the emitter for this test. CA9 CA9A CA9C MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS Electrical Specifications For Equipment Design At T A = o C (CA9A Only) PARAMETER SYMBOL TEST CONDITIONS FOR TRANSISTORS Q AND Q (AS A DIFFERENTIAL AMPLIFIER) CA9A MIN TYP MAX UNITS Absolute Input Offset Voltage V IO V CE = V, I C = ma -. mv Absolute Input Offset Current I IO -.. µa Absolute Input Offset Voltage Temperature Coefficient V IO T -. - µv/ o C FOR TRANSISTORS Q AND Q (AS A DIFFERENTIAL AMPLIFIER) Absolute Input Offset Voltage V IO V CE = -V, I C = -µa -. mv R S = Absolute Input Offset Current I IO - na Absolute Input Offset Voltage Temperature Coefficient V IO T -. - µv/ o C
4 Electrical Specifications Typical Values Intended Only for Design Guidance At T A = o C PARAMETER SYMBOL TEST CONDITIONS DYNAMIC CHARACTERISTICS FOR EACH NPN TRANSISTOR TYPICAL VALUES UNITS Noise Figure (Low Frequency) NF f = khz, V CE = V, I C = ma, R S = kω. db Low-Frequency, Input Resistance R I f =.khz, V CE = V I C = ma kω Low-Frequency Output Resistance R O f =.khz, V CE = V I C = ma kω Admittance Characteristics Forward Transfer Admittance Input Admittance Output Admittance y g FE f = MHz, V CE = V, I C = ma. ms FE b FE f = MHz, V CE = V, I C = ma -j ms y g IE f = MHz, V CE = V, I C = ma. ms IE b IE f = MHz, V CE = V, I C = ma j. ms y g OE f = MHz, V CE = V, I C = ma. ms OE b OE f = MHz, V CE = V, I C = ma j. ms Gain-Bandwidth Product f T V CE = V, I C =.ma MHz V CE = V, I C = ma MHz Emitter-To-Base Capacitance C EB V EB = V. pf Collector-To-Base Capacitance C CB V CB = V. pf Collector-To-Substrate Capacitance C CI V CI = V. pf DYNAMIC CHARACTERISTICS FOR EACH PNP TRANSISTOR Noise Figure (Low Frequency) NF f = khz, I C = µa, R S = kω db Low-Frequency Input Resistance R I f = khz, V CE = V, I C = µa kω Low-Frequency Output Resistance R O f = khz, V CE = V, I C = µa kω Gain-Bandwidth Product f T V CE = V, I C = µa. MHz Emitter-To-Base Capacitance C EB V EB = -V. pf Collector-To-Base Capacitance C CB V CB = -V. pf Base-To-Substrate Capacitance C BI V BI = V. pf Typical Applications (SUBSTRATE) f Ω kω µf.µf Q kω Q V+ = V kω kω.µf 9 OUTPUT f Ω Q NOTE: F OR F < khz FIGURE. FREQUENCY COMPARATOR USING CA9 OUTPUT VOLTAGE (V) 9 CENTER FREQUENCY: khz - - f - f > f = f f - f > FREQUENCY DEVIATION (khz) FIGURE. FREQUENCY COMPARATOR CHARACTERISTICS
5 Typical Applications (Continued) V AC Q µf V + - NTC SENSOR Q Q kω kω.kω kω G MT TB MT.kΩ W Q 9 R P.kΩ kω Q LOAD FIGURE. LINE-OPERATED LEVEL SWITCH USING CA9A OR CA9 +V MOSFET Q kω kω kω Q kω Q Q kω 9 Q OUTPUT MΩ µf kω.9kω kω TIME DELAY CHANGES ±% FOR SUPPLY VOLTAGE CHANGE OF ±% FIGURE. ONE-MINUTE TIMER USING CA9A AND A MOSFET V+ V T = ± I O R L IF I O = ma AND R L = kω V T = ± mv V IN Ω kω Q Q R L kω Q Q kω Ω EO +V T V IN -V T E O t kω 9 I O Q kω V- t FIGURE. CA9A SMALL-SIGNAL ZERO VOLTAGE DETECTOR HAVING NOISE IMMUNITY
6 Typical Applications (Continued).V LAMP GE D OR EQUIVALENT Q Q kω kω 9 Q.MΩ Q Q kω µf kω kω (SUBSTRATE) FIGURE. TEN-SECOND TIMER OPERATED FROM.V SUPPLY USING CA9 +V kω %.kω %.kω % OUTPUT INPUT kω % Q Q Q Q kω % Q 9 NOTES:. Can be operated with either dual supply or single supply.. Wide-input common mode range +V to -V.. Low bias current: <µa. kω % kω % kω % Ω % kω % -V FIGURE. CASCADE OF DIFFERENTIAL AMPLIFIERS USING CA9A VOLTAGE GAIN (db) FIGURE. FREQUENCY RESPONSE
7 Typical Performance Curves ZENER CURRENT (ma) V Z ZENER VOLTAGE (V) FIGURE 9. BASE-TO-EMITTER ZENER CHARACTERISTIC (NPN) COLLECTOR CUT-OFF CURRENT (pa) V CE = V TEMPERATURE ( o C) V CE = V FIGURE. COLLECTOR CUT-OFF CURRENT (I CEO ) vs TEMPERATURE (NPN) COLLECTOR CUT-OFF CURRENT (pa) V CB = V V CB = V V CB = V TEMPERATURE ( o C) DC FORWARD CURRENT TRANSFER RATIO T A = o C T A = o C T A = - o C.. FIGURE. COLLECTOR CUT-OFF CURRENT (I CBO ) vs TEMPERATURE (NPN) FIGURE. TRANSISTOR (NPN) h FE vs COLLECTOR CURRENT.9 V CE = V BASE TO EMITTER VOLTAGE (V).... BASE TO EMITTER VOLTAGE (V) I C = ma,.mv/ o C I C = ma,.mv/ o C I C = ma,.9mv/ o C I C = µa,.mv/ o C TEMPERATURE ( o C) FIGURE. V BE (NPN) vs COLLECTOR CURRENT FIGURE. V BE (NPN) vs TEMPERATURE
8 Typical Performance Curves (Continued) COLLECTOR TO EMITTER SATURATION VOLTAGE (V)..... T A = o C T A = o C β = T A = - o C... COLLECTOR CUT-OFF CURRENT (pa) V CE = -V V CE = -V V CE = -V - - TEMPERATURE ( o C) FIGURE. V CE SAT (NPN) vs COLLECTOR CURRENT FIGURE. COLLECTOR CUT-OFF CURRENT (I CEO ) vs TEMPERATURE (PNP) COLLECTOR CUT-OFF CURRENT (pa) V CB = -V V CB = -V V CB = -V - - TEMPERATURE ( o C) DC FORWARD CURRENT TRANSFER RATIO V CE = V 9 V CE = V V CE = V... FIGURE. COLLECTOR CUT-OFF CURRENT (I CBO ) vs TEMPERATURE (PNP) FIGURE. TRANSISTOR (PNP) h FE vs COLLECTOR CURRENT DC FORWARD CURRENT TRANSFER RATIO V CE = V I C = µa I C = µa I C = ma I C = ma - - TEMPERATURE ( o C) BASE TO EMITTER VOLTAGE (V) V CE = V... FIGURE 9. TRANSISTOR (PNP) h FE vs TEMPERATURE FIGURE. V BE (PNP) vs COLLECTOR CURRENT
9 Typical Performance Curves (Continued) BASE TO EMITTER VOLTAGE (V).9 I C = ma, V BE / T -.9mV/ o C.. I C = ma, -.mv/ o C. I C = µa, -.mv/ o C TEMPERATURE ( o C) MAGNITUDE OF INPUT OFFSET VOLTAGE (mv) FIGURE. V BE (PNP) vs TEMPERATURE FIGURE. MAGNITUDE OF INPUT OFFSET VOLTAGE V IO vs COLLECTOR CURRENT FOR NPN TRANSISTOR Q - Q MAGNITUDE OF INPUT OFFSET VOLTAGE (mv) NOISE FIGURE (db) R SOURCE = Ω I C = ma ma µa µa... FIGURE. MAGNITUDE OF INPUT OFFSET VOLTAGE V IO vs COLLECTOR CURRENT FOR PNP TRANSISTOR Q - Q FIGURE. NOISE FIGURE vs FREQUENCY FOR NPN TRANSISTORS NOISE FIGURE (db) I C = ma ma µa R SOURCE = kω NOISE FIGURE (db) R SOURCE = kω I C = ma µa ma µa µa.. FIGURE. NOISE FIGURE vs FREQUENCY FOR NPN TRANSISTORS... FIGURE. NOISE FIGURE vs FREQUENCY FOR NPN TRANSISTORS 9
10 Typical Performance Curves (Continued) NOISE FIGURE (db) µa µa I C = ma R SOURCE = kω R SOURCE = MΩ µa GAIN-BANDWIDTH PRODUCT (MHz) V CE = V µa.... FIGURE. NOISE FIGURE vs FREQUENCY FOR NPN TRANSISTORS FIGURE. GAIN-BANDWIDTH PRODUCT vs COLLECTOR CURRENT (NPN).. f = khz CAPACITANCE (pf)..... C EB C CI INPUT RESISTANCE (kω) PNP NPN. C CB 9 BIAS VOLTAGE (V) FIGURE 9. CAPACITANCE vs BIAS VOLTAGE (NPN).. FIGURE. INPUT RESISTANCE vs COLLECTOR CURRENT OUTPUT RESISTANCE (kω) f = khz NPN PNP... FORWARD TRANSFER CONDUCTANCE (g FE ) OR FORWARD TRANSFER SUSCEPTANCE (b FE ) (ms) - - g FE b FE I C = ma ma g FE µa b FE µa FREQUENCY (MHz) FIGURE. OUTPUT RESISTANCE vs COLLECTOR CURRENT FIGURE. FORWARD TRANSCONDUCTANCE vs FREQUENCY
11 Typical Performance Curves (Continued) g IE INPUT CONDUCTANCE (g IE ) OR INPUT SUSCEPTANCE (b IE ) (ms) b IE µa µa ma I C = ma ma ma µa µa FREQUENCY (MHz) OUTPUT CONDUCTANCE (g OE ) OR OUTPUT SUSCEPTANCE (b OE ) (ms)..... µa b OE I C = ma b OE µa g OE ma g OE FREQUENCY (MHz) FIGURE. INPUT ADMITTANCE vs FREQUENCY FIGURE. OUTPUT ADMITTANCE vs FREQUENCY RSOURCE = Ω R SOURCE = kω NOISE FIGURE (db) µa µa I C = ma NOISE FIGURE (db) µa µa I C = ma... FIGURE. NOISE FIGURE vs FREQUENCY (PNP).. FIGURE. NOISE FIGURE vs FREQUENCY (PNP) R SOURCE = kω V CE = V NOISE FIGURE (db) µa µa I C = ma GAIN-BANDWIDTH PRODUCT (MHz)... FIGURE. NOISE FIGURE vs FREQUENCY (PNP).. FIGURE. GAIN-BANDWIDTH PRODUCT vs COLLECTOR CURRENT (PNP)
12 Typical Performance Curves (Continued) CAPACITANCE (pf) C BC C BI C BE 9 BIAS VOLTAGE (V) Metallization Mask Layout FIGURE 9. CAPACITANCE vs BIAS VOLTAGE (PNP) CA9H - (.9-.) - (.-.) - (.9-.) Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils ( - inch). The photographs and dimensions represent a chip when it is part of the wafer. When the wafer is cut into chips, the cleavage angles are degrees instead of 9 degrees with respect to the face of the chip. Therefore, the isolated chip is actually mils (.mm) larger in both dimensions.
13 Dual-In-Line Plastic Packages (PDIP) BASE PLANE SEATING PLANE D B B D e D -C- A. (.) M C A NOTES:. Controlling Dimensions: INCH. In case of conflict between English and Metric dimensions, the inch dimensions control.. Dimensioning and tolerancing per ANSI Y.M-9.. Symbols are defined in the MO Series Symbol List in Section. of Publication No. 9.. Dimensions A, A and L are measured with the package seated in JE- DEC seating plane gauge GS-.. D, D, and E dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed. inch (.mm).. E and e A are measured with the leads constrained to be perpendicular to datum -C-.. e B and e C are measured at the lead tips with the leads unconstrained. e C must be zero or greater.. B maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed. inch (.mm). 9. N is the maximum number of terminal positions.. Corner leads (, N, N/ and N/ + ) for E., E., E., E., E. will have a B dimension of. -. inch (. -.mm). A L B S A e C E C L e A e B C E. (JEDEC MS--BB ISSUE D) LEAD DUAL-IN-LINE PLASTIC PACKAGE INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A A A B B...., C D D E.... E.... e. BSC. BSC - e A. BSC. BSC e B L...9. N 9 Rev. /9
14 Small Outline Plastic Packages (SOIC) N INDEX AREA e D B.(.) M C A M E -B- -A- -C- SEATING PLANE A B S H.(.) M B A α.(.) L M h x o NOTES:. Symbols are defined in the MO Series Symbol List in Section. of Publication Number 9.. Dimensioning and tolerancing per ANSI Y.M-9.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed.mm (. inch) per side.. Dimension E does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed.mm (. inch) per side.. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.. L is the length of terminal for soldering to a substrate.. N is the number of terminal positions.. Terminal numbers are shown for reference only. 9. The lead width B, as measured.mm (. inch) or greater above the seating plane, shall not exceed a maximum value of.mm (. inch).. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. C M. (JEDEC MS--AC ISSUE C) LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A A B C D E.9... e. BSC. BSC - H h L.... N α o o o o - Rev. /9 All Intersil semiconductor products are manufactured, assembled and tested under ISO9 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box, Mail Stop - Melbourne, FL 9 TEL: () - FAX: () - EUROPE Intersil SA Mercure Center, Rue de la Fusee Brussels, Belgium TEL: ().. FAX: ()... ASIA Intersil (Taiwan) Ltd. Taiwan Limited F-, No. Fu Hsing North Road Taipei, Taiwan Republic of China TEL: () 9 FAX: () 9
CA3096, CA3096A, CA3096C
January OBSOLETE PRODUCT POSSIBLE SUBSTITUTE PRODUCT HFA39 CA39, CA39A, CA39C NPN/PNP Transistor Arrays Applications Five-Independent Transistors - Three NPN and - Two PNP Differential Amplifiers DC Amplifiers
More informationDATASHEET CA3096, CA3096A, CA3096C. Description. Applications. CA3096, CA3096A, CA3096C Essential Differences. Part Number Information.
DATASHEET CA39, CA39A, CA39C NPN/PNP Transistor Arrays Applications Five-Independent Transistors - Three NPN and - Two PNP Differential Amplifiers DC Amplifiers Sense Amplifiers Level Shifters Timers Lamp
More informationCA3102. Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz. Features. Applications. Ordering Information.
CA Data Sheet November 999 File Number 6.6 Dual High Frequency Differential Amplifier For Low Power Applications Up to MHz The CA consists of two independent differential amplifiers with associated constant
More informationDATASHEET CA Applications. Pinout. Ordering Information. General Purpose NPN Transistor Array. FN483 Rev.6.00 Page 1 of 7.
DATASHEET CA-386 General Purpose NPN Transistor Array The CA386 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected
More informationCA3045, CA3046. General Purpose NPN Transistor Arrays. Features. Description. Ordering Information. Applications. Pinout.
SEMICONDUCTOR CA4, CA46 November 996 General Purpose NPN Transistor Arrays Features Description Two Matched Transistors - V BE Match.............................. ±mv - I IO Match...........................
More informationCA3046. General Purpose NPN Transistor Array. Features. Applications. Ordering Information. Pinout. Data Sheet May 2001 File Number 341.
CA Data Sheet May File Number. General Purpose NPN Transistor Array The CA consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally
More informationOBSOLETE PRODUCT RECOMMENDED REPLACEMENT PART
CA-46 General Purpose NPN Transistor Array OBSOLETE PRODUCT RECOMMENDED REPLACEMENT PART HFA46 DATASHEET FN4 Rev 6. December, The CA46 consists of five general purpose silicon NPN transistors on a common
More informationCA124, CA224, CA324, LM324, LM2902
OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT CA, CA, CA, LM, LM9 Data Sheet May File Number 796.5 itle 9 b- ad, Hz, raal plis i- - -, usl, lis) tho y- ds er- Quad, MHz, Operational Amplifiers for Commercial,
More informationDATASHEET CA3127. Features. Applications. Ordering Information. Pinout. High Frequency NPN Transistor Array. FN662 Rev.5.00 Page 1 of 9.
DATASHEET CA1 High Frequency NPN Transistor Array The CA1 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits
More informationCA3018, CA3018A. General Purpose Transistor Arrays. Features. Applications. Part Number Information. Pinout. [ /Title () /Autho.
[ /Title /Subject /Autho /Keyords ) /Cretor /DOCI FO dfark /Pageode /Useutines /DOC- IEW dfark Semiconductor General Purpose Transistor Arrays The CA8 and CA8A consist of four general purpose silicon NPN
More informationFeatures TEMP. RANGE ( C)
DATASHEET HFA0, HFA09, HFA27, HFA28 Ultra High Frequency Transistor Arrays The HFA0, HFA09, HFA27 and the HFA28 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation
More informationCA5260, CA5260A. 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output. Features. Description.
, A November 1996 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output Features Description MOSFET Input Stage provides - Very High Z I = 1.5TΩ (1.5 x 10 12 Ω) (Typ) - Very Low
More informationHA Features. 12MHz, High Input Impedance, Operational Amplifier. Applications. Pinout. Part Number Information. Data Sheet May 2003 FN2893.
OBSOLETE PRODUCT POSSIBLE SUBSTITUTE PRODUCT HA-2525 HA-2515 Data Sheet May 23 FN2893.5 12MHz, High Input Impedance, Operational Amplifier HA-2515 is a high performance operational amplifier which sets
More informationHA MHz Video Buffer. Features. Applications. Ordering Information. Pinouts. Data Sheet February 6, 2006 FN2924.8
HA-533 Data Sheet February 6, 26 FN2924.8 25MHz Video Buffer The HA-533 is a unity gain monolithic IC designed for any application requiring a fast, wideband buffer. Featuring a bandwidth of 25MHz and
More informationDATASHEET CA3054. Features. Applications. Ordering Information. Pinout. Dual Independent Differential Amp for Low Power Applications from DC to 120MHz
DATASHEET CA5 Dual Independent Differential Amp for Low Power Applications from DC to MHz FN88 Rev.. Jan, 7 The CA5 consists of two independent differential amplifiers with associated constant current
More informationHA Features. Quad, 3.5MHz, Operational Amplifier. Applications. Pinout. Ordering Information. Data Sheet July 2004 FN2922.5
HA-4741 Data Sheet July 24 FN2922. Quad, 3.MHz, Operational Amplifier HA-4741, which contains four amplifiers on a monolithic chip, provides a new measure of performance for general purpose operational
More informationLM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
More informationLM3046 Transistor Array
LM3046 Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form
More informationCA741, CA741C, CA1458, CA1558, LM741, LM741C, LM1458
OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT CA, CAC, CA, CA, LM, LMC, LM Data Sheet May File Number. tle M le l, h s raal pli li.9mhz Single and Dual, High Gain Operational Amplifiers for Military, Industrial
More informationDATASHEET HA Features. Applications. Pinout. Part Number Information. 12MHz, High Input Impedance, Operational Amplifier
12MHz, High Input Impedance, Operational Amplifier OBSOLETE PRODUCT POSSIBLE SUBSTITUTE PRODUCT HA-2525 DATASHEET FN289 Rev 6. HA-255 is an operational amplifier whose design is optimized to deliver excellent
More informationHA MHz Video Buffer. Description. Features. Applications. Ordering Information. Pinouts. April 1997
SEMICONDUCTOR HA-533 April 997 25MHz Video Buffer Features Differential Phase Error...............2 Degrees Differential Gain Error......................3% High Slew Rate......................... /µs Wide
More informationHA4600. Features. 480MHz, SOT-23, Video Buffer with Output Disable. Applications. Pinouts. Ordering Information. Truth Table
TM Data Sheet June 2000 File Number 3990.6 480MHz, SOT-23, Video Buffer with Output Disable The is a very wide bandwidth, unity gain buffer ideal for professional video switching, HDTV, computer monitor
More informationCA3262A, CA3262. Quad-Gated, Inverting Power Drivers. Features. Description. Ordering Information. Pinouts. August 1997
Semiconductor CA6A, CA6 August 997 Quad-Gated, Inverting Power Drivers Features Independent Over-Current Limiting On Each Output Independent Over-Temperature Limiting On Each Output Output Drivers Capable
More informationLM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
More informationDATASHEET HA Features. Applications. Ordering Information. Pinouts. 250MHz Video Buffer. FN2924 Rev 8.00 Page 1 of 12.
25MHz Video Buffer NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLACEMENT contact our Technical Support Center at -888-INTERSIL or www.intersil.com/tsc DATASHEET FN2924 Rev 8. The HA-533 is a unity
More informationCA3290, CA3290A. BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output. Features. Applications. Pinout. Ordering Information
Data Sheet September 99 File Number 09.3 BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output The CA390A and CA390 types consist of a dual voltage comparator on a single monolithic chip. The
More informationDATASHEET HA Features. Applications. Pinout. Ordering Information. Quad, 3.5MHz, Operational Amplifier. FN2922 Rev 5.00 Page 1 of 8.
DATASHEET HA-4741 Quad, 3.5MHz, Operational Amplifier HA-4741, which contains four amplifiers on a monolithic chip, provides a new measure of performance for general purpose operational amplifiers. Each
More informationDATASHEET HFA3102. Features. Ordering Information. Applications. Pinout/Functional Diagram. Dual Long-Tailed Pair Transistor Array
DATASHEET HFA312 Dual Long-Tailed Pair Transistor Array The HFA312 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1
More informationDATASHEET ICL8069. Features. Pinouts. Ordering Information. Low Voltage Reference. FN3172 Rev.3.00 Page 1 of 6. Jan FN3172 Rev.3.00.
DATASHEET Low Voltage Reference The is a 1.2V temperature-compensated voltage reference. It uses the band-gap principle to achieve excellent stability and low noise at reverse currents down to 50 A. Applications
More informationHA-2520, HA-2522, HA-2525
HA-, HA-, HA- Data Sheet November, 6 FN894.8 MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers HA-, HA-, HA- comprise a series of operational amplifiers delivering an unsurpassed
More informationCA3080, CA3080A. 2MHz, Operational Transconductance Amplifier (OTA) Features. Applications. Pinouts. Ordering Information
CA, CAA Data Sheet September 99 File Number. MHz, Operational Transconductance Amplifier (OTA) The CA and CAA types are GatableGain Blocks which utilize the unique operationaltransconductanceamplifier
More informationSP720. Electronic Protection Array for ESD and Over-Voltage Protection. Features. [ /Title (SP720 ) /Subject. (Electronic.
SP70 Data Sheet January 99 File Number 79.0 [ /Title (SP70 ) /Subject (Electronic Protection Array for ESD and Over Voltage Protection) /Autho r () /Keywords (TVS, Transient Suppression, Protection, ESD,
More informationLM3146 High Voltage Transistor Array
LM3146 High Voltage Transistor Array General Description The LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally
More informationHA Features. 400MHz, Fast Settling Operational Amplifier. Applications. Ordering Information. Pinout. Data Sheet August 2002 FN2897.
HA-5 Data Sheet August FN97. MHz, Fast Settling Operational Amplifier The Intersil HA-5 is a wideband, very high slew rate, monolithic operational amplifier featuring superior speed and bandwidth characteristics.
More informationCA3140, CA3140A. 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output. Description. Features. Applications. Ordering Information
November 99 SEMICONDUCTOR CA, CAA.MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Features MOSFET Input Stage - Very High Input Impedance (Z IN ) -.TΩ (Typ) - Very Low Input Current (I
More informationCA3012. FM IF Wideband Amplifier. Description. Features. Applications. Ordering Information. Schematic Diagram. Pinout.
SEMICONDUCTOR CA30 November 99 FM IF Wideband Amplifier Features Exceptionally High Amplifier Gain - Power Gain at.mhz.....................7db Excellent Input Limiting Characteristics - Limiting Voltage
More informationHIP V, 300mA Three Phase High Side Driver. Features. Applications. Ordering Information. Pinout. July 2004
HIP0 Data Sheet July 00 FN. 0V, 00mA Three Phase High Side Driver The HIP0 is a three phase high side N-channel MOSFET driver, specifically targeted for PWM motor control. Two HIP0 may be used together
More informationElectronics II (02 SE048) Lab Experiment 1 (option A): BJT Differential Amplifiers
Departamento de Electrónica, Sistemas e Informática Ingeniería Electrónica Electronics II (02 SE048) Lab Experiment 1 (option A): BJT Differential Amplifiers Objectives The general objective of this experiment
More informationNOT RECOMMENDED FOR NEW DESIGNS
NOT RECOMMENDED FOR NEW DESIGNS POSSIBLE SUBSTITUTE PRODUCTS (ISL6614, ISL6614A, and ISL6614B) Dual Channel Synchronous-Rectified Buck MOSFET Driver DATASHEET FN4838 Rev.1. The HIP662 is a high frequency,
More informationSP723 Lead-Free/Green
TVS Diode Arrays The SP73 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection of sensitive input circuits. The SP73 has protection SCR/Diode device structures per input. There
More informationHA, HA Absolute Maximum Ratings Supply Voltage Between V+ and V Terminals V Differential Input Voltage V
HA, HA Data Sheet October 6, FN9.9 Dual and Quad, 8MHz, Low Noise Operational Amplifiers Low noise and high performance are key words describing HA and HA. These general purpose amplifiers offer an array
More informationCA3028A, CA3028B, CA3053 Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz
November 99 SEMICONDUCTOR CAA, CAB, CA Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to MHz Features Controlled for Input Offset Voltage, Input Offset Current and Input
More informationDATASHEET HA-2520, HA-2522, HA Features. Applications. Ordering Information
DATASHEET 2MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers FN2894 Rev 1. comprise a series of operational amplifiers delivering an unsurpassed combination of specifications
More informationHP4410DY. Features. 10A, 30V, Ohm, Single N-Channel, Logic Level Power MOSFET. Symbol. Ordering Information. Packaging
HP441DY Data Sheet August 1999 File Number 4468.4 1A, 3V,.135 Ohm, Single N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology
More informationLM3045 LM3046 LM3086 Transistor Arrays
LM3045 LM3046 LM3086 Transistor Arrays General Description The LM3045 LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors
More informationDATASHEET ISL6208. Features. Applications. Related Literature. Ordering Information. Pinout. High Voltage Synchronous Rectified Buck MOSFET Driver
NOT RECOMMENDED FOR NEW DESIGNS POSSIBLE SUBSTITUTE PRODUCT ISL6208 High Voltage Synchronous Rectified Buck MOSFET Driver DATASHEET FN9047 Rev 0.00 The ISL6205 is a high-voltage, high-frequency, dual MOSFET
More informationHA-2640, HA Features. 4MHz, High Supply Voltage Operational Amplifiers. Applications. Ordering Information. Pinouts
HA-264, HA-2645 Data Sheet January 3, 26 FN294.5 4MHz, High Supply Voltage Operational Amplifiers HA-264 and HA-2645 are monolithic operational amplifiers which are designed to deliver unprecedented dynamic
More informationDATASHEET HFA1112. Features. Applications. Related Literature. Pin Descriptions. Ordering Information
DATASHEET HFA1112 85MHz, Low Distortion Programmable Gain Buffer Amplifiers FN2992 Rev 8. July 27, 25 The HFA1112 is a closed loop Buffer featuring user programmable gain and ultra high speed performance.
More informationHA-2520, HA-2522, HA-2525
HA-, HA-, HA- Data Sheet September 99 File Number 9. MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers HA-// comprise a series of operational amplifiers delivering an unsurpassed
More informationAD7520, AD Bit, 12-Bit, Multiplying D/A Converters. Features. Ordering Information. Pinouts. Data Sheet August 2002 FN3104.
AD720, AD72 Data Sheet August 2002 FN304.4 0Bit, 2Bit, Multiplying D/A Converters The AD720 and AD72 are monolithic, high accuracy, low cost 0bit and 2bit resolution, multiplying digitaltoanalog converters
More informationDatasheetArchive.com. Request For Quotation
DatasheetArchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative
More informationHA5023. Dual 125MHz Video Current Feedback Amplifier. Features. Applications. Ordering Information. Pinout. Data Sheet September 30, 2015 FN3393.
HA523 Data Sheet September 3, 215 FN3393.9 Dual 125MHz Video Current Feedback Amplifier The HA523 is a wide bandwidth high slew rate dual amplifier optimized for video applications and gains between 1
More informationDATASHEET CD22M3494. Features. Applications. Block Diagram. 16 x 8 x 1 BiMOS-E Crosspoint Switch. FN2793 Rev 8.00 Page 1 of 10.
DATASHEET CD22M3494 16 x 8 x 1 BiMOS-E Crosspoint Switch The Intersil CD22M3494 is an array of 128 analog switches capable of handling signals from DC to video. Because of the switch structure, input signals
More informationHA-2600, HA Features. 12MHz, High Input Impedance Operational Amplifiers. Applications. Pinouts. Ordering Information
HA26, HA26 September 998 File Number 292.3 2MHz, High Input Impedance Operational Amplifiers HA26/26 are internally compensated bipolar operational amplifiers that feature very high input impedance (MΩ,
More informationTEMP. PKG. -IN 1 16 S/H CONTROL PART NUMBER RANGE
DATASHEET 7ns, Low Distortion, Precision Sample and Hold Amplifier FN59 Rev 5. The combines the advantages of two sample/ hold architectures to create a new generation of monolithic sample/hold. High amplitude,
More informationDATASHEET HA4314B. Features. Ordering Information. Applications. Truth Table. 400MHz, 4x1 Video Crosspoint Switch. FN3679 Rev 12.
DATASHEET B 4MHz, 4x1 Video Crosspoint Switch FN3679 Rev 12. The B is a very wide bandwidth 4x1 crosspoint switch ideal for professional video switching, HDTV, computer monitor routing, and other high
More informationC 2 B 1 E 1 E 2 B 2 C 1. Top View
MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification
More informationISL6536A. Four Channel Supervisory IC. Features. Applications. Typical Application Schematic. Ordering Information. Data Sheet May 2004 FN9136.
ISL6536A Data Sheet May 2004 FN9136.1 Four Channel Supervisory IC The ISL6536A is a four channel supervisory IC designed to monitor voltages >, = 0.7V. This IC bias range is from 2.7V to 5V but can supervise
More informationData Sheet June Features. Pinout
NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 888INTERSIL or www.intersil.com/tsc 0Bit Multiplying D/A Converter The AD7533 is a monolithic, low cost,
More informationHA-2520, HA MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers. Features. Applications. Ordering Information
HA-22, HA-22 Data Sheet August, 2 FN2894. 2MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers HA-22/22 comprise a series of operational amplifiers delivering an unsurpassed
More informationDual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
More informationDATASHEET ISL6700. Features. Ordering Information. Applications. Pinouts. 80V/1.25A Peak, Medium Frequency, Low Cost, Half-Bridge Driver
DATASHEET ISL6700 80V/1.25A Peak, Medium Frequency, Low Cost, Half-Bridge Driver FN9077 Rev.6.00 The ISL6700 is an 80V/1.25A peak, medium frequency, low cost, half-bridge driver IC available in 8-lead
More informationHI-201HS. Features. High Speed, Quad SPST, CMOS Analog Switch. Applications. Ordering Information. Pinout (Switches Shown For Logic 1 Input) FN3123.
HI-HS Data Sheet September 4 FN.4 High Speed, Quad SPST, CMOS Analog Switch The HI-HS is a monolithic CMOS Analog Switch featuring very fast switching speeds and low ON resistance. The integrated circuit
More informationCD Features. 5V Low Power Subscriber DTMF Receiver. Pinouts. Ordering Information. Functional Diagram
Data Sheet February 1 File Number 1.4 5V Low Power Subscriber DTMF Receiver The complete dual tone multiple frequency (DTMF) receiver detects a selectable group of 1 or 1 standard digits. No front-end
More informationDATASHEET X Features. Pinout. Ordering Information. Dual Digitally Controlled Potentiometers (XDCPs ) FN8187 Rev 1.
DATASHEET X93255 Dual Digitally Controlled Potentiometers (XDCPs ) The Intersil X93255 is a dual digitally controlled potentiometer (XDCP). The device consists of two resistor arrays, wiper switches, a
More informationHA Features. 650ns Precision Sample and Hold Amplifier. Applications. Functional Diagram. Ordering Information. Pinout
HA-50 Data Sheet June 200 FN2858.5 650ns Precision Sample and Hold Amplifier The HA-50 is a very fast sample and hold amplifier designed primarily for use with high speed A/D converters. It utilizes the
More informationDATASHEET HA-5102, HA Pinouts. Ordering Information. Features. Applications. Dual and Quad, 8MHz, Low Noise Operational Amplifiers
DATASHEET HA-512, HA-514 Dual and Quad, 8Hz, Low Noise Operational Amplifiers FN2925 Rev 9. October 26, 24 Low noise and high performance are key words describing HA-512 and HA-514. These general purpose
More informationHA MHz, PRAM Four Channel Programmable Amplifiers. Features. Applications. Pinout. Ordering Information
HA0 Data Sheet August 00 FN89. 0MHz, PRAM Four Channel Programmable Amplifiers The HA0 comprise a series of fourchannel programmable amplifiers providing a level of versatility unsurpassed by any other
More informationMARKING RANGE ( C) PACKAGE DWG. # HA-2600 (METAL CAN)
DATASHEET 2MHz, High Input Impedance Operational Amplifier is an internally compensated bipolar operational amplifier that features very high input impedance (5M coupled with wideband AC performance. The
More informationNPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
More informationCD4585BMS. CMOS 4-Bit Magnitude Comparator. Features. Pinout. Functional Diagram. Applications. Description. December 1992
CD55BMS December 199 Features High Voltage Type (V Rating) Expansion to, 1, 1...N Bits by Cascading Units Medium Speed Operation - Compares Two -Bit Words in 1ns (Typ.) at 1% Tested for Quiescent Current
More informationHGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
A M A A January 1997 SEMICONDUCTOR HGTP7N6C3D, HGT1S7N6C3D, HGT1S7N6C3DS 14A, 6V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features 14A, 6V at T C = 2 o C 6V Switching SOA Capability
More informationDATASHEET HA Features. Applications. Ordering Information. 110MHz, High Slew Rate, High Output Current Buffer. FN2921 Rev 12.
DATASHEET HA-52 MHz, High Slew Rate, High Output Current Buffer The HA-52 is a monolithic, wideband, high slew rate, high output current, buffer amplifier. Utilizing the advantages of the Intersil D.I.
More informationHA Quad, 3.5MHz, Operational Amplifier. Description. Features. Applications. Ordering Information. Pinouts. November 1996
SEMICONDUCTOR HA4741 November 1996 Features Slew Rate...............................1.6V/µs Bandwidth................................MHz Input Voltage Noise...................... 9nV/ Hz Input Offset Voltage.........................mV
More informationDATASHEET HC5503T. Features. Applications. Ordering Information. Block Diagram. Balanced PBX/Key System SLIC, Subscriber Line Interface Circuit
NOT RECOMMENDED FOR NEW DESIGNS RECOMMENDED REPLACEMENT PART HC5503PRC Balanced PBX/Key System SLIC, Subscriber Line Interface Circuit DATASHEET FN4506 Rev 2.00 The Intersil HC5503T is a low cost Subscriber
More informationMMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
More informationISL21009MEP. Features. High Voltage Input Precision, Low Noise FGA Voltage References. Device Information. Available Options. Applications.
ISL219MEP Data Sheet December 15, 28 FN6744. High Voltage Input Precision, Low Noise FGA Voltage References The ISL219MEP FGA voltage references are extremely low power, high precision, and low noise voltage
More informationHI-200, HI-201. Dual/Quad SPST, CMOS Analog Switches. Features. Applications. Ordering Information. Functional Diagram FN3121.8
HI-200, HI-201 Data Sheet FN3121.8 Dual/Quad SPST, CMOS Analog Switches HI-200/HI-201 (dual/quad) are monolithic devices comprising independently selectable SPST switches which feature fast switching speeds
More informationFeatures. NOTE: Non-designated pins are no connects and are not electrically connected internally.
OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc Data Sheet December 1995, Rev. G EL2001 FN7020 Low Power, 70MHz Buffer Amplifier
More informationDATASHEET X Features. Pinout. Ordering Information. Dual Digitally Controlled Potentiometers (XDCPs ) FN8186 Rev 1.
DATASHEET X93254 Dual Digitally Controlled Potentiometers (XDCPs ) The Intersil X93254 is a dual digitally controlled potentiometer (XDCP). The device consists of two resistor arrays, wiper switches, a
More informationAudio, Dual-Matched NPN Transistor MAT12
Data Sheet FEATURES Very low voltage noise: nv/ Hz maximum at 00 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μv maximum Outstanding offset voltage drift: 0.03 μv/ C typical
More informationDATASHEET ICL7611, ICL7612. Features. Applications. Pinouts. 1.4MHz, Low Power CMOS Operational Amplifiers. FN2919 Rev 9.
DATASHEET ICL711, ICL71 1.MHz, Low Power CMOS Operational Amplifiers The ICL71X series is a family of CMOS operational amplifiers. These devices provide the designer with high performance operation at
More informationHA MHz, Fast Settling Operational Amplifier. Features. Applications. Pinout. Part Number Information. Data Sheet November 19, 2004 FN2914.
OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 888TERSIL or www.intersil.com/tsc HA595 Data Sheet November 9, 2 FN29.6 5MHz, Fast Settling Operational Amplifier The
More informationBC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
More informationMMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
More informationCA3338, CA3338A. CMOS Video Speed, 8-Bit, 50 MSPS, R2R D/A Converters. Features. Applications. Ordering Information. Pinout FN1850.
CA3338, CA3338A Data Sheet May 2003 FN1850.3 CMOS Video Speed, 8-Bit, 50 MSPS, 2 D/A Converters The CA3338 family are CMOS/SOS high speed 2 voltage output digital-to-analog converters. They can operate
More informationEMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
More informationDATASHEET HA Features. Applications. Ordering Information. Pinout. 400MHz, Fast Settling Operational Amplifier. FN2897 Rev.5.
DATASHEET MHz, Fast Settling Operational Amplifier The Intersil is a wideband, very high slew rate, monolithic operational amplifier featuring superior speed and bandwidth characteristics. Bipolar construction
More informationSingle-Supply, Rail-to-Rail, Low Power, FET Input Op Amp AD820
Single-Supply, Rail-to-Rail, Low Power, FET Input Op Amp AD820 FEATURES True single-supply operation Output swings rail-to-rail Input voltage range extends below ground Single-supply capability from 5
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More informationNSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
More informationDATASHEET CA3080, CA3080A. Features. Applications. Pinouts. Part Number Information. 2MHz, Operational Transconductance Amplifier (OTA)
CA8, CA8A MHz, Operational Transconductance Amplifier (OTA) OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 888INTERSIL or www.intersil.com/tsc DATASHEET FN Rev.. Jan,
More informationBASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.
More informationMMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon
L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications
More informationMatched Monolithic Quad Transistor MAT04
a FEATURES Low Offset Voltage: 200 V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 ma: 2.5 nv/ Hz max Excellent Log Conformance: rbe = 0.6 max Matching
More informationTVS Diode Arrays (SPA Diodes) SP723 Series 5pF 8kV Diode Array. General Purpose ESD Protection - SP723 Series. RoHS Pb GREEN.
SP723 Series 5pF 8kV Diode Array RoHS Pb GREEN Description The SP723 is an array of SR/Diode bipolar structures for ESD and over-voltage protection of sensitive input circuits. The SP723 has 2 protection
More informationNSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationImproved Second Source to the EL2020 ADEL2020
Improved Second Source to the EL ADEL FEATURES Ideal for Video Applications.% Differential Gain. Differential Phase. db Bandwidth to 5 MHz (G = +) High Speed 9 MHz Bandwidth ( db) 5 V/ s Slew Rate ns Settling
More informationHA7210. Features. 10kHz to 10MHz, Low Power Crystal Oscillator. Applications. Ordering Information. Typical Application Circuit.
Data Sheet February 999 File Number 9. khz to MHz, Low Power Crystal Oscillator The HA is a very low power crystal-controlled oscillators that can be externally programmed to operate between khz and MHz.
More informationDATASHEET HA-5137A. Features. Applications. Ordering Information. Pinout. 63MHz, Ultra-Low Noise Precision Operational Amplifier
DATASHEET HA-5137A 3MHz, Ultra-Low Noise Precision Operational Amplifier The HA-5137 operational amplifier features an unparalleled combination of precision DC and wideband high speed characteristics.
More information