2SK1949(L), 2SK1949(S)
|
|
- Lee Johnston
- 5 years ago
- Views:
Transcription
1 Silicon N-Channel MOS FET November 996 Application High speed power switching Features Low on-resistance High speed switching Low drive current V gate drive device can be driven from V source Suitable for Switching regulator, DC - DC converter Avalanche ratings Outline DPAK- 3 3 D G. Gate. Drain 3. Source. Drain S
2 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage S ± V Drain current I D A Drain peak current I D(pulse) * A Body to drain diode reverse drain current I DR A Avalanche current I AP * 3 A Avalanche energy E AR * 3. mj Channel dissipation Pch* W Channel temperature Tch C Storage temperature Tstg to + C Notes. PW µs, duty cycle %. Value at Tc = C 3. Value at Tch = C, Rg Ω
3 Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS 6 V I D = ma, = voltage Gate to source breakdown voltage V (BR)GSS ± V I G = ± µa, V DS = Gate to source leak current I GSS ± µa = ±6 V, V DS = Zero gate voltage drain current I DSS µa V DS = V, = Gate to source cutoff voltage (off).. V I D = ma, V DS = V Static drain to source on state resistance R DS(on).. Ω I D = 3 A = V*.. Ω I D = 3 A = V* Forward transfer admittance y fs 3. S I D = 3 A V DS = V* Input capacitance Ciss 39 pf V DS = V = f = MHz Output capacitance Coss 9 pf Reverse transfer capacitance Crss pf Turn-on delay time t d(on) ns I D = 3 A = V R L = Ω Rise time t r ns Turn-off delay time t d(off) 9 ns Fall time t f ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note. V DF. V I F = A, = t rr 6 ns I F = A, =, dif / dt = A / µs 3
4 Channel Dissipation Pch (W) 3 Power vs. Temperature Derating Case Temperature Tc ( C). Maximum Safe Operation Area Operation in this area is limited by R DS(on) µs µs PW = ms (shot) ms DC Operation (Tc = C).. Ta = C.. Drain to Source Voltage V DS (V) 6 Typical Output Characteristics V V V 3. V 3 V. V = V 6 Typical Transfer Characteristics V DS = V 7 C C Tc = C 6 Drain to Source Voltage V (V) DS 3 Gate to Source Voltage V (V) GS
5 Drain to Source Sasuration Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage A A I D = A 6 Gate to Source Voltage V (V) GS Drain to Source On State Resistance R DS(on) ( Ω ) Static Drain to Source State Resistance vs. Drain Current..... V = V.. Static Drain to Source on State Resistance R DS(on) ( Ω ) Static Drain to Source on State Resistance vs. Temperature = V V I D = A A A A A A 6 Case Temperature Tc ( C) Forward Transfer Admittance yfs (S).. Forward Transfer Admittance vs. Drain Current V DS = V Tc = C C 7 C..
6 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) di/dt = A/µs, Ta = C =,... Reverse Drain Current I DR (A) Capacitance C (pf) Ciss Coss Crss = f = MHz 3 Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) 6 V DS Dynamic Input Characteristics V DD = V V V I D = A 6 V DD = V V V 6 Gate Charge Qg (nc) Gate to Source Voltage (V) Switching Time t (ns). Switching Characteristics = V, V DD = 3 V PW = µs, duty < % t d(off) t f t r t d(on).. 6
7 Reverse Drain Current I DR (A) 6 Reverse Drain Current vs. Source to Drain Voltage V V =, V Drain to Source Voltage V DS (V) Repetive Avalanche Energy E AR (mj)... Maximun Avalanche Energy vs. Channel Temperature Derating I AP = A V DD = V duty <. % Rg > Ω 7 Channel Temperature Tch ( C) Avalanche Test Circuit and Waveform VDS Monitor Rg L I AP Monitor D. U. T VDD E AR = L I AP I AP VDSS V DSS VDD V (BR)DSS V DS I D Vin V Ω VDD 7
8 3 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t).3..3 D = shot pulse. µ µ m m Pulse Width θ ch c(t) = γ s (t) θ ch c θch c = 6. C/W, Tc = C PDM PW T Tc = C D = PW T m PW (S) Switching Time Test Circuit Waveform Vin Monitor D.U.T. R L Vout Monitor Vin % 9% Vin V Ω VDD = 3 V Vout % % 9% 9% td(on) tr td(off) t f
9 Notice When using this document, keep the following in mind:. This document may, wholly or partially, be subject to change without notice.. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user s unit according to this document.. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein.. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo, Japan Tel: Tokyo (3) 37- Fax: (3) 37-9 For further information write to: Hitachi America, Ltd. Hitachi Europe GmbH Semiconductor & IC Div. Electronic Components Group Sierra Point Parkway Continental Europe Brisbane, CA. 9-3 Dornacher Straße 3 U S A D-6 Feldkirchen Tel: -9-3 München Fax: -3-7 Tel: Fax: Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 YA United Kingdom Tel: 6- Fax: Hitachi Asia Pte. Ltd. 6 Collyer Quay #- Hitachi Tower Singapore Tel: 3- Fax: 3-33 Hitachi Asia (Hong Kong) Ltd. Unit 76, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 739 Fax:
2SK2554. Silicon N-Channel MOS FET. November Application. Features. Outline. High speed power switching
Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance R DS(on) = 4.5 mω typ. High speed switching 4 V gate drive device can be driven from 5 V source
More information2SK1056, 2SK1057, 2SK1058
SK, SK7, SK8 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with SJ1, SJ11 and SJ1 Features Good frequency characteristic High speed switching Wide area of safe
More information2SJ534. Silicon P Channel MOS FET High Speed Power Switching. ADE C (Z) 4th. Edition Jul Features. Outline
Silicon P Channel MOS FET High Speed Power Switching ADE-28-589C (Z) 4th. Edition Jul. 1998 Features Low on-resistance R DS(on) =.5Ω typ. Low drive current. 4V gate drive devices. High speed switching.
More information2SJ553(L), 2SJ553(S)
1 2 3 2SJ553(L), 2SJ553(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-650B (Z) 3rd. Edition Jul. 1998 Features Low on-resistance R DS(on) = 0.028Ω typ. Low drive current. 4V gate drive
More information2SK3235. Silicon N Channel MOS FET High Speed Power Switching
Silicon N Channel MOS FET High Speed Power Switching ADE--37 (Z) st. Edition Mar. 0 Features Low on-resistance: R DS(on) = 0.3 Ω typ. Low leakage current: IDSS = µa max (at VDS = 500 V) High speed switching:
More information2SJ217. Silicon P-Channel MOS FET
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable
More information2SJ130(L), 2SJ130(S)
SJ13(L), SJ13(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator,
More information2SK2393. Silicon N-Channel MOS FET. Application. Features. Outline. High voltage / High speed power switching
SK9 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable
More information2SK1303. Silicon N-Channel MOS FET
Silicon N-Channel MOS FET ADE-8-161 (Z) 1st. Edition Mar. 1 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven
More information2SK1300. Silicon N-Channel MOS FET
Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor
More information2SJ517. Silicon P Channel MOS FET High Speed Power Switching. ADE B (Z) 3rd. Edition Jul Features. Outline
Silicon P Channel MOS FET High Speed Power Switching ADE-28-575B (Z) 3rd. Edition Jul. 1998 Features Low on-resistance R DS(on) =.18 Ω typ. (at V GS = 4V, I D = 1A) Low drive current High speed switching
More information2SK975. Silicon N-Channel MOS FET
SK97 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable for motor
More informationItem Symbol Ratings Unit Drain to Source voltage V DSS 300 V Gate to Source voltage V GSS ±30 V Drain current I D 88 A Drain peak current.
H5NP Silicon N Channel MOS FET High Speed Power Switching REJG85- Rev.. Aug.5.4 Features Low on-resistance Low leakage current High speed switching Outline TO-P D G. Gate. Drain (Flange). Source S Absolute
More information2SC4927. Silicon NPN Triple Diffused. Application. Features. Outline. TV/character display horizontal deflection output. High breakdown voltage V CES
SC497 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High breakdown voltage V CES = 00 V Built-in damper diode type Isolated package TO-3PFM Outline
More information2SB648, 2SB648A. Silicon PNP Epitaxial. Low frequency high voltage amplifier complementary pair with 2SD668/A
Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = C) Ratings
More information2SJ363. Silicon P-Channel MOS FET. Application. Features. Outline. Low frequency power switching
Silicon P-Channel MOS FET Application Low frequency power switching Features Low on-resistance Low drive current 4 V gate drive device can be driven from V source Outline UPAK 3 4 D G. Gate. Drain 3. Source
More information2SK2937. Silicon N Channel MOS FET High Speed Power Switching. Features. Outline. REJ03G (Previous: ADE C) Rev.5.
Silicon N Channel MOS FET High Speed Power Switching REJ3G51-5 (Previous: ADE-8-56C) Rev.5. Sep 7, 5 Features Low on-resistance R DS =.26 Ω typ. High speed switching 4 V gate drive device can be driven
More informationPF0030 Series. MOS FET Power Amplifier. ADE (Z) 1st. Edition July Features. Ordering Information. Pin Arrangement
PF Series MOS FET Power Amplifier ADE--6 (Z) 1st. Edition July 1996 Features High stability: Load VSWR = : 1 Low power control current: µa Thin package: 5 mmt Ordering Information Type No Operating Frequency
More information2SK2596. Silicon N-Channel MOS FET UHF Power Amplifier. ADE (Z) 1st. Edition Mar Features. Outline
Silicon N-Channel MOS FET UHF Power Amplifier ADE-08-367 (Z) st. Edition Mar. 00 Features High power output, High gain, High efficiency PG =.db, Pout = 3dBm, ηd = 4 %min. (f = 836.MHz) Compact package
More information2SK2568. Silicon N Channel MOS FET. Application. Features. Outline. REJ03G (Previous: ADE ) Rev.3.00 Sep 07, 2005
Silicon N Channel MOS FET REJ03G1017-0300 (Previous: ADE-208-1363) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Suitable
More information2SC2979. Silicon NPN Triple Diffused
Silicon NPN Triple Diffused Application High, high speed and high power switching Outline TO-220AB 1 2 1. Base 2. Collector (Flange). Emitter Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit
More informationRJK0393DPA. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings. REJ03G Rev.2.
Silicon N Channel Power MOS FET Power Switching REJ3G78- Rev.2. Apr 3, 9 Features High speed switching Capable of.5v gate drive Low drive current High density mounting Low on-resistance R DS(on) = 3.3
More informationOld Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April st,, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all
More informationOld Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 1, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over
More informationOld Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April st,, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all
More information2SK2141 MOS FIELD EFFECT TRANSISTOR DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS FEATURES
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching
More informationRJK60S4DPE. Preliminary Datasheet. 600V - 16A - SJ MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJK6SDPE 6V - 6A - SJ MOS FET High Speed Power Switching Datasheet R7DS733EJ2 Rev.2. Oct 2, 22 Features Superjunction MOSFET Low on-resistance R DS(on) =.23 typ. (at I D = 8 A, V GS = V, Ta = 25 C) High
More information2SK2483 MOS FIELD EFFECT TRANSISTOR DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION FEATURES
DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SK8 DESCRIPTION The SK8 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
More informationRJK03M5DNS. Preliminary Datasheet. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
RJK3M5DNS Silicon N Channel Power MOS FET Power Switching Datasheet R7DS769EJ11 Rev.1.1 May 29, Features High speed switching Capable of.5 V gate drive Low drive current High density mounting Low on-resistance
More informationRJK0653DPB. Preliminary Datasheet. 60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching. Features. Outline.
RJK653DPB 6V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Datasheet Low on-resistance
More information2SJ160, 2SJ161, 2SJ162
Silicon P Channel MOS FET REJ3G847-2 (Previous: ADE-28-1182) Rev.2. Sep 7, 25 Description Low frequency power amplifier Complementary pair with 2SK156, 2SK157 and 2SK158 Features Good frequency characteristic
More information2SD787, 2SD788. Silicon NPN Epitaxial. ADE (Z) 1st. Edition Mar Application. Outline
Silicon NPN Epitaxial ADE-208-119 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SB78 and 2SB79 Outline TO-92MOD 1. Emitter 2. Collector. Base 2 1 Absolute
More informationRJF0605DPD Description Features Outline Absolute Maximum Ratings Item Symbol Ratings Unit
RJF65DPD Silicon N Channel MOS FET Series Power Switching Description Datasheet This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over
More information2SC1775, 2SC1775A. Silicon NPN Epitaxial. Application. Outline. Low frequency low noise amplifier Complementary pair with 2SA872/A TO-92 (1)
SC1775, SC1775A Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with SA7/A Outline TO-9 (1) 1. Emitter. Collector. Base 1 SC1775, SC1775A Absolute Maximum Ratings
More information2SA1083, 2SA1084, 2SA1085
2SA8, 2SA84, 2SA85 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline TO-92 (1) 2 1 1. Emitter 2. Collector. Base 2SA8, 2SA84,
More informationRJK0328DPB-01. Preliminary Datasheet. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
RJK328DPB- Silicon N Channel Power MOS FET Power Switching Datasheet R7DS264EJ5 (Previous: REJ3G637-4) Rev.5. Mar, Features High speed switching Capable of 4.5 V gate drive Low drive current High density
More informationOld Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 1, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics,
More information2SJ181(L), 2SJ181(S) Preliminary Datasheet. Silicon P Channel MOS FET. Description. Features. Outline. Absolute Maximum Ratings
Silicon P Channel MOS FET Datasheet R7DS395EJ3 (Previous: REJ3G848-2) Rev.3. May 16, 211 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary
More information2SC5628. Silicon NPN Epitaxial High Frequency Amplifier / Oscillator. ADE A (Z) 2nd. Edition April Features. Outline
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-8-979A (Z) nd. Edition April Features Super compact package; (..8.9mm) High power gain and low noise figure; (PG = 9 db, NF =. db typ, at
More information2SC5702. Silicon NPN Epitaxial High Frequency Amplifier / Oscillator. ADE (Z) 1st. Edition Mar Features. Outline
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-28-11 (Z) 1st. Edition Mar. 21 Features High gain bandwidth product f T = 8 GHz typ. High power gain and low noise figure ; PG = 13 db typ.,
More information4V Drive Pch MOSFET. Data Sheet RP1H065SP. 1/ Rev.A. Dimensions (Unit : mm) Structure Silicon P-channel MOSFET
4V Drive Pch MOSFET RPH65SP Structure Silicon P-channel MOSFET Dimensions (Unit : mm) MPT6 (Single) Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
More informationRJK1054DPB. Preliminary Datasheet. 100V, 20A, 22m max. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
V, A, 22m max. Silicon N Channel Power MOS FET Power Switching Features High speed switching Low drive current Low on-resistance R DS(on) = 7 m typ. (at V GS = V) Pb-free Halogen-free High density mounting
More information2SK2369/2SK2370 MOS FIELD EFFECT TRANSISTORS DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 查询 K2370 供应商 DESCRIPTION FEATURES
查询 K237 供应商 DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK237 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK237 is N-Channel MOS Field Effect Transistor designed for
More information10V Drive Nch MOSFET. Data Sheet RSJ400N06. 1/ Rev.A. Dimensions (Unit : mm) Structure Silicon N-channel MOSFET
V Drive Nch MOSFET RSJ400N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS. 4.5.3 Features ) Low on-resistance. 2) High current 3) High power Package 3. 3.0 9.0.0.24 2.54 5.08 0.78 0.4
More informationMOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK25, 2SK25-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK25 is N-Channel MOS Field Effect Transistor designed for high voltage switching
More informationSWITCHING N-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK25,25-Z SWITCHING N-CHANNEL POWER MOS FET Description The 2SK25 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. Features
More informationRJK0351DPA. Preliminary Datasheet. 30V, 40A, 4.2m max. N Channel Power MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJK35DPA V, A,.2m max. N Channel Power MOS FET High Speed Power Switching Datasheet R7DS9EJ Rev.. Mar 9, 23 Features High speed switching Capable of.5 V gate drive Low drive current High density mounting
More information2SC460, 2SC461. Silicon NPN Epitaxial Planar. Application. Outline. 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixer TO-92 (2)
Silicon NPN Epitaxial Planar Application 2SC46 high frequency amplifier, mixer 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item
More information2SD667, 2SD667A. Silicon NPN Epitaxial. ADE (Z) 1st. Edition Mar Application. Outline
Silicon NPN Epitaxial ADE-8-1137 (Z) 1st. Edition Mar. 1 Application Low frequency power amplifier Complementary pair with SB647/A Outline TO-9MOD 1. Emitter. Collector 3. Base 3 1 Absolute Maximum Ratings
More informationMOS FIELD EFFECT POWER TRANSISTORS 2SJ495
DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching
More informationMOS FIELD EFFECT TRANSISTOR
DATA SHEET MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The is a switching device, which can be driven directly by a 2.5 V power source. This device features
More informationMOS FIELD EFFECT TRANSISTOR 2SK3304
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR 2SK3304 DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING
More informationNew Designs. Not Recommended for. 4V Drive Nch MOSFET. Data Sheet RSD080N06. 1/ Rev.A. Structure Silicon N-channel MOSFET
4V Drive Nch MOSFET RSD8N6 Structure Silicon N-channel MOSFET Features ) Low on-resistance. 2) 4V drive. 3) High power package(cpt3). Application Switching Packaging specifications Package Taping Type
More informationItem Symbol Value Unit Drain to source voltage V DSS 500 V Gate to source voltage V GSS 30 V Drain current I D 3 A Drain peak current. Note1.
RJK5DPD Silicon N Channel MOS FET High Speed Power Switching Datasheet R7DS7EJ Rev.. Features Low on-state resistance R DS(on) =. typ. (at I D =.5 A, V GS = V, Ta = 5 C) High speed switching Outline RENESAS
More informationNew Designs. Not Recommended for. 4V Drive Pch MOSFET. Data Sheet RSD140P06. 1/ Rev.A. Dimensions (Unit : mm)
4V Drive Pch MOSFET RSD4P6 Structure Silicon P-channel MOSFET Features ) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging
More informationMOS FIELD EFFECT POWER TRANSISTORS
DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µpa1712 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications
More informationHA17080 Series. J-FET Input Operational Amplifiers. Description. Features
HA Series J-FET Input Operational Amplifiers Description Since J-FET input operational amplifiers are formed from a pair of J-FET transistors, they provide superlative characteristics, including a high
More informationMOS FIELD EFFECT TRANSISTOR 2SK3377
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR 2SK3377 DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
More informationItem Symbol Value Unit Drain to source voltage V DSS 600 V Gate to source voltage V GSS 30 V Drain current. Note4. Note1. Note1. Note3.
RJK66DPP-E 6V - 5A - MOS FET High Speed Power Switching Datasheet R7DS6EJ Rev.. Mar 6, Features Low on-state resistance R DS(on) =. typ. (at I D =.5 A, V GS = V, Ta = 5 C) High speed switching Outline
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR 2SK3357 DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications.
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR 2SK34 DESCRIPTION The 2SK34 is N-channel DMOS FET device that features a low gate charge and excellent switching
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK38 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK38 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING
More informationRJK0305DPB-02. Preliminary Datasheet. 30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
RJK35DPB-2 3V, 3A, 8.mΩmax Silicon N Channel Power MOS FET Power Switching Datasheet R7DS25EJ9 (Previous: REJ3G353-9) Rev.9. Jan 7, 5 Features High speed switching Capable of.5 V gate drive Low drive current
More informationNew Designs. Not Recommended for. 4V Drive Nch MOSFET. Data Sheet RSD175N10. 1/ Rev.A. Dimensions (Unit : mm)
4V Drive Nch MOSFET RSD75N Structure Silicon N-channel MOSFET Features ) Low on-resistance. 4) 4V drive. 4) High power package. Application Switching Packaging specifications Package Taping Type Code TL
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK399 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK399 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR 2SK335 DESCRIPTION The 2SK335 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
More informationMOS FIELD EFFECT TRANSISTOR 2SK3058
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR 2SK358 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
More informationThe NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Part No. Lead Plating Packing Package
NP8N4TUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R7DS54EJ Rev.. Sep 3, Description The NP8N4TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
More informationDATA SHEET SWITCHING P-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION
More information2SK E. Data Sheet. 1500V - 2A - MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings. R07DS1275EJ0200 Rev.2.
SK5-8-E 5V - A - MOS FET High Speed Power Switching Data Sheet R7DS75EJ Rev.. Features High breakdown voltage (V DSS = 5 V) High speed switching Low drive current Outline RENESAS Package code: PRSSZD-A
More informationNew Designs. Not Recommended for. 4V Drive Nch MOSFET RSD050N06. Data Sheet. 1/ Rev.B. Dimensions (Unit : mm)
4V Drive Nch MOSFET RSD050N06 Structure Silicon N-channel MOSFET Features ) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications Switching
More informationDATA SHEET SWITCHING P-CHANNEL POWER MOS FET
DATA SHEET 参考資料 MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR SK33B DESCRIPTION The SK33B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics,
More informationTOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOS III) 2SJ669
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOS III) Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON-resistance: R DS (ON) =.2 Ω
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK36 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK36 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics,
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 2SK35 DESCRIPTION The 2SK35 is N-Channel DMOS FET device that features a low gate charge and excellent switching
More informationOld Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April st, 2, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over
More informationPF08103B. MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone. ADE D (Z) 5th Edition Jan Application.
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-8-785D (Z) 5th Edition Jan. 01 Application Dual band amplifier for E-GSM900 (880 MHz to 915 MHz) and DCS1800 (17 MHz to
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR NPNPUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NPNPUG is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for high
More informationHA17903, HA17393 Series
Dual Comparator Description HA1793 and HA17393 are comparators designed for car use and control system use. They provide wide voltage range with single power source, and the change of supply current is
More information2.5V Drive Nch+Pch MOSFET
.V Drive Nch+Pch MOSFET EM6M EM6M Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) EMT6 Features ) Nch MOSFET and Pch MOSFET are put in EMT6 package. ) High-speed switching.
More informationNew Designs. Not Recommended for. 4V Drive Nch MOSFET. Data Sheet RSJ300N10. 1/ Rev.A. Dimensions (Unit : mm)
4V Drive Nch MOSFET RSJ3N Structure Silicon N-channel MOSFET Features ) Low on-resistance. 2) Built-in G-S Protection Diode. Application Switching Packaging specifications Package Taping Type Code TL Basic
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK22 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK22 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
More informationMOS FIELD EFFECT TRANSISTOR
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP8N3CLE,NP8N3DLE,NP8N3ELE NP8N3KLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current
More information4V Drive Nch + Pch MOSFET
4V Drive Nch + Pch MOSFET SH8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features ) Low on-resistance. 2) High power package(sop8). 3) Low voltage drive(4v drive). Dimensions (Unit
More information2SK3815 2SK3815. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN8 SK81 SK81 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR 2SK38 DESCRIPTION The 2SK38 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
More information4V Drive Pch MOSFET RRR040P03
4V Drive Pch MOSFET Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSMT3 Features ) Low On-resistance. 2) Space saving small surface mount package (TSMT3). 3) 4V drive. (3) () (2) Abbreviated
More informationMOS FIELD EFFECT TRANSISTOR NP110N04PDG
DATA SHEET MOS FIELD EFFECT TRANSISTOR NPN4PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NPN4PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING
More informationDATA SHEET SWITCHING N-CHANNEL POWER MOS FET. The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK5 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK5 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low
More information4V Drive Nch MOSFET. Data Sheet RSJ300N10. 1/ Rev.A. Structure Silicon N-channel MOSFET. Dimensions (Unit : mm)
4V Drive Nch MOSFET RSJ3N Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS. 4.5.3 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3. 3. 9...24 2.54.78.4.2 5.8 2.7 () (2) (3)
More information2SK4124. SANYO Semiconductors DATA SHEET 2SK4124. Features. Specifications. N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Ordering number : ENA46 SK414 SANYO Semiconductors DATA SHEET SK414 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed
More informationDATA SHEET SWITCHING N- AND P-CHANNEL POWER MOS FET. Gate. Protection Diode
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA279GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The μ PA279GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application.
More informationMOS FIELD EFFECT TRANSISTOR µ PA2700GR
DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR µ PA7GR DESCRIPTION The µpa7gr is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications
More informationRJK6024DPD. Preliminary Datasheet. 600V - 0.4A - MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
Datasheet RJK624DPD 6V -.4A - MOS FET High Speed Power Switching R7DS688EJ2 (Previous: REJ3G936-) Rev.2. Features Low on-resistance R DS(on) = 28 typ. (at I D =.2 A, V GS = V, Ta = 25 C) Low drive current
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
More information2SJ616. unit : mm 2062A
Ordering number : ENNA SJ616 P-Channel Silicon MOSFET SJ616 Preliminary Ultrahigh-Speed Switching Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Package Dimensions unit :
More informationHA17555 Series. Precision Timer
Precision Timer ADE-204-064 (Z) Rev. 0 Dec. 2000 Description HA17555 Series are ICs designed for accurate time delays or oscillations. It provides both of trigger terminal and reset terminal in order to
More information