2SK2937. Silicon N Channel MOS FET High Speed Power Switching. Features. Outline. REJ03G (Previous: ADE C) Rev.5.
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1 Silicon N Channel MOS FET High Speed Power Switching REJ3G51-5 (Previous: ADE-8-56C) Rev.5. Sep 7, 5 Features Low on-resistance R DS =.26 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS3AD-A (Package name: TO-2FM) D G 1. Gate 2. Drain 3. Source S Rev.4. Sep 7, 5 page 1 of 7
2 Absolute Maximum Ratings Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage V GSS ± V Drain current I D 25 A Drain peak current I D(pulse) Note1 A Body-drain diode reverse drain current I DR 25 A Avalanche current Avalanche energy I AP Note3 E AR Note3 A 34 mj Channel dissipation Pch Note2 25 W Channel temperature Tch 15 C Storage temperature Tstg 55 to +15 C Notes: 1. PW µs, duty cycle 1 % 2. Value at Tc = 25 C 3. Value at Tch = 25 C, Rg 5 Ω Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 6 V I D = ma, V GS = Gate to source breakdown voltage V (BR)GSS ± V I G = ± µa, V DS = Gate to source leak current I GSS ± µa V GS = ±16 V, V DS = Zero gate voltege drain current I DSS µa V DS = 6 V, V GS = Gate to source cutoff voltage V GS(off) V I D = 1 ma, V DS = Static drain to source on state R DS(on) Ω I D = 15 A, V GS = Note4 resistance R DS(on).45.7 Ω I D = 15 A, V GS = 4 V Note4 Forward transfer admittance y fs S I D = 15 A, V DS = Note4 Input capacitance Ciss 74 pf Output capacitance Coss 38 pf Reverse transfer capacitance Crss 14 pf Turn-on delay time t d(on) ns Rise time t r 16 ns Turn-off delay time t d(off) ns Fall time t f 15 ns V DS =, V GS =, f = 1 MHz I D = 15 A, V GS =, R L = 2 Ω Body drain diode forward voltage V DF.95 V I F = 25A, V GS = Body drain diode reverse recovery time Note: 4. Pulse test t rr 4 ns I F = 25A, V GS = di F / dt = 5 A/µs Rev.4. Sep 7, 5 page 2 of 7
3 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 4 Channel Dissipation Pch (W) ms µs PW = ms (1shot) DC Operation (Tc = 25 C) µs 2 Operation in 1 this area is limited by R DS(on).5 Ta = 25 C Case Temperature T C ( C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics V 5 V 4.5 V 4 V 3.5 V V GS = 3 V V DS = Tc = 75 C 25 C 25 C Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) Drain to Source Saturation Voltage V DS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage I D = 15 A A 5 A Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current V GS = 4 V Gate to Source Voltage V GS (V) Rev.4. Sep 7, 5 page 3 of 7
4 Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature V GS = 4 V A 2, 5 A 2, 5, A Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current Tc = 25 C 75 C 25 C 1 V DS = Case Temperature T C ( C) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 5 5 di / dt = 5 A / µs V GS =, Ta = 25 C Capacitance C (pf) Ciss Coss Crss V GS = f = 1 MHz Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics Drain to Source Voltage V DS (V) I D = 25 A V DS V DD = 5 V 25 V V GS V DD = 5 V 4 25 V Gate to Source Voltage V GS (V) Switching Time t (ns) 3 3 t r t d(off) t f t d(on) 3 V GS =, V DD = 3 V 1 PW = 5 µs, duty < 1 % Gate Charge Qg (nc) Rev.4. Sep 7, 5 page 4 of 7
5 Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current I DR (A) V V GS =, 5 V Repetitive Avalanche Energy E AR (mj) I AP = A V DD = 25 V duty <.1 % Rg > 5 Ω Source to Drain Voltage V SD (V) Channel Temperature Tch ( C) Normalized Transient Thermal Impedance γs (t) D = Normalized Transient Thermal Impedance vs. Pulse Width.1 1shot pulse.1 µ µ 1 m m m 1 Pulse Width PDM PW (S) PW T Tc = 25 C θ ch c(t) = γ s (t) θ ch c θch c = 5. C/W, Tc = 25 C D = PW T Avalanche Test Circuit Avalanche Waveform V DS Monitor L E AR = 1 2 L I AP 2 V DSS V DSS V DD I AP Monitor V (BR)DSS Rg D. U. T V DD I AP V DS Vin 15 V 5 Ω I D V DD Rev.4. Sep 7, 5 page 5 of 7
6 Switching Time Test Circuit Switching Time Waveforms Vin Monitor D.U.T. Vout Monitor 9% R L Vin % Vin 5 Ω V DD = 3 V Vout % % 9% 9% td(on) tr td(off) tf Rev.4. Sep 7, 5 page 6 of 7
7 Package Dimensions JEITA Package Code SC-67 RENESAS Code PRSS3AD-A Package Name TO-2FM / TO-2FMV MASS[Typ.] 1.8g Unit: mm. ±.3 7. ±.3 φ 3.2 ± ± ± ± ± ± ±.2 2. ±.3 5. ±.3.7 ± ± ± ± ±.5.5 ±.1 Ordering Information Part Name Quantity Shipping Container 2SK2937-E 5 pcs Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4. Sep 7, 5 page 7 of 7
8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo -4, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page ( 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to " for the latest and detailed information. Renesas Technology America, Inc. 45 Holger Way, San Jose, CA , U.S.A Tel: <1> (48) , Fax: <1> (48) Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-, Fax: <44> (1628) Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> , Fax: <852> Renesas Technology Taiwan Co., Ltd. th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) , Fax: <886> (2) Renesas Technology (Shanghai) Co., Ltd. Unit267 Ruijing Building, No.5 Maoming Road (S), Shanghai, China Tel: <86> (21) , Fax: <86> (21) Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #6-, Keppel Bay Tower, Singapore Tel: <65> 6213-, Fax: <65> Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 14-72, Korea Tel: <82> , Fax: <82> Renesas Technology Malaysia Sdn. Bhd. Unit 96, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 465 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <63> , Fax: <63> Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon.3.
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