HD74HC4060FPEL. 14-stage Binary Counter. Description. Features. Function Table. REJ03D (Previous ADE ) Rev.2.

Size: px

Start display at page:

Download "HD74HC4060FPEL. 14-stage Binary Counter. Description. Features. Function Table. REJ03D (Previous ADE ) Rev.2."

Felicity Cunningham
5 years ago
Views:

1 4-stage Binary ounter J03D (Previous D ) ev.2.00 Mar 30, 2006 Description The is a 4 stage counter, this device increments on the falling edge (negative traition) of the input clock, and all their outputs are reset to a low level by applying a logical high on their reset input. The also has two additional inputs to enable easy connection of either an or crystal oscillator. Features High Speed Operation: t pd (lock to ) = 4.5 typ ( L = 50 pf) High Output urrent: Fanout of 0 LSTTL Loads Wide Operating oltage: = 2 to 6 Low Input urrent: µ max Low uiescent Supply urrent: I (static) = 4 µ max (Ta = 25 ) Ordering Information Part Name P FPL Package Type DILP-6 pin SOP-6 pin (JIT) Package ode (Previous ode) PDP006-B (DP-6F) PSP006DH-B (FP-6D) Note: Please coult the sales office for the above package availability. Package bbreviation P FP Taping bbreviation (uantity) L (2,000 pcs/reel) Function Table X: Irrelevant Outputs State L No change L dvance to next stage X H ll outputs are low ev.2.00 Mar 30, 2006 page of 6

2 Pin rrangement GND 7 8 lock out lock out lock out lock out 2 (Top view) Block Diagram lock out 2 lock out Timing Diagram ,024 2,048 4,096 8,92 6, ev.2.00 Mar 30, 2006 page 2 of 6

3 bsolute Maximum atings Item Symbol atings Unit Supply voltage range 0.5 to 7.0 Input / Output voltage IN, OUT 0.5 to +0.5 Input / Output diode current I IK, I OK ±20 m Output current I OUT ±25 m, GND current I or I GND ±50 m Power dissipation P T 500 mw Storage temperature Tstg 65 to +50 Note: The absolute maximum ratings are values, which must not individually be exceeded, and furthermore, no two of which may be realized at the same time. ecommended Operating onditio Item Symbol atings Unit onditio Supply voltage 2 to 6 Input / Output voltage IN, OUT 0 to Operating temperature Ta 40 to 85 0 to 000 = 2.0 Input rise / fall time * t r, t f 0 to 500 = to 400 = 6.0 Note:. This item guarantees maximum limit when one input switches. Waveform: efer to test circuit of switching characteristics. lectrical haracteristics Input voltage Ta = 25 Ta = 40 to+85 Item Symbol () Min Typ Max Min Max Unit Test onditio Output voltage IH IL OH OL I OH = 20 µ I OH = 4 m in = IH or IL I OH = 5.2 m I OL = 20 µ I OH = 4 m in = IH or IL Input current Iin 6.0 ±0. ±.0 µ in = or GND uiescent supply current I OH = 5.2 m I µ in = or GND, Iout = 0 µ ev.2.00 Mar 30, 2006 page 3 of 6

4 Switching haracteristics ( L = 50 pf, Input t r = t f = 6 ) Ta = 25 Ta = 40 to +85 Item Symbol () Min Typ Max Min Max Unit Test onditio Maximum clock frequency Propagation delay time emoval time Pulse width Output rise/fall time f max t PLH t PHL t PHL t rem t w t TLH t THL Input capacitance in pf MHz lock to lock to to output Test ircuit Input Pulse Generator out = 50 Ω Input Pulse Generator out = 50 Ω See Function Table lock out lock out2 Output Output L = 50 pf L = 50 pf Note :. L includes probe and jig capacitance. ev.2.00 Mar 30, 2006 page 4 of 6

5 Waveforms Waveform ny tr tf GND lock 0% tw 0% 0 tplh tphl 0% 0% OH OL ttlh tthl Note :. Input waveform : P MHz, o = 50 Ω, t r 6, t f 6 Wavwform 2 tr tf 0% tw trem 0% 0 lock 0% 0 tphl ny 0% OH OL tthl Note :. Input waveform : P MHz, o = 50 Ω, t r 6, t f 6 ev.2.00 Mar 30, 2006 page 5 of 6

6 Package Dimeio JIT Package ode NSS ode Previous ode MSS[Typ.] P-DIP6-6.3x PDP006-B DP-6F.05g D b 3 e b p L θ c e ( Ni/Pd/u plating ) eference Dimeion in Millimeters Symbol Min Nom Max e 7.62 D b p b 3.30 c θ 0 5 e L 2.54 * D *2 6 9 F H c JIT Package ode NSS ode Previous ode MSS[Typ.] P-SOP6-5.5x PSP006DH-B FP-6D 0.24g NOT). DIMNSIONS"* (Nom)"ND"*2" DO NOT INLUD MOLD FLSH. 2. DIMNSION"*3"DOS NOT INLUD TIM OFFST. b p Index mark e 8 *3 b p x M y Terminal cross section ( Ni/Pd/u plating ) Detail F L L θ Dimeion in Millimeters Min Nom Max D b p b c c θ 0 8 H e.27 x 0.2 y L L.5 eference Symbol ev.2.00 Mar 30, 2006 page 6 of 6

7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, hiyoda-ku, Tokyo , Japan Keep safety first in your circuit desig!. enesas Technology orp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. emember to give due coideration to safety when making your circuit desig, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention agait any malfunction or mishap. Notes regarding these materials. These materials are intended as a reference to assist our customers in the selection of the enesas Technology orp. product best suited to the customer's application; they do not convey any licee under any intellectual property rights, or any other rights, belonging to enesas Technology orp. or a third party. 2. enesas Technology orp. assumes no respoibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. ll information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by enesas Technology orp. without notice due to product improvements or other reaso. It is therefore recommended that customers contact enesas Technology orp. or an authorized enesas Technology orp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. enesas Technology orp. assumes no respoibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by enesas Technology orp. by various mea, including the enesas Technology orp. Semiconductor home page ( 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. enesas Technology orp. assumes no respoibility for any damage, liability or other loss resulting from the information contained herein. 5. enesas Technology orp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact enesas Technology orp. or an authorized enesas Technology orp. product distributor when coidering the use of a product contained herein for any specific purposes, such as apparatus or systems for traportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of enesas Technology orp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictio, they must be exported under a licee from the Japanese government and cannot be imported into a country other than the approved destination. ny diversion or reexport contrary to the export control laws and regulatio of Japan and/or the country of destination is prohibited. 8. Please contact enesas Technology orp. for further details on these materials or the products contained therein. NSS SLS OFFIS efer to " for the latest and detailed information. enesas Technology merica, Inc. 450 Holger Way, San Jose, , U.S. Tel: <> (408) , Fax: <> (408) enesas Technology urope Limited Dukes Meadow, Millboard oad, Bourne nd, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (628) , Fax: <44> (628) enesas Technology (Shanghai) o., Ltd. Unit 204, 205, Ienter, No.233 Lujiazui ing d, Pudong District, Shanghai, hina Tel: <86> (2) , Fax: <86> (2) enesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance entre, Harbour ity, anton oad, Tsimshatsui, Kowloon, Hong Kong Tel: <852> , Fax: <852> enesas Technology Taiwan o., Ltd. 0th Floor, No.99, Fushing North oad, Taipei, Taiwan Tel: <886> (2) , Fax: <886> (2) enesas Technology Singapore Pte. Ltd. Harbour Front venue, #06-0, Keppel Bay Tower, Singapore Tel: <65> , Fax: <65> enesas Technology Korea o., Ltd. Kukje enter Bldg. 8th Fl., 9, 2-ka, Hangang-ro, Yongsan-ku, Seoul , Korea Tel: <82> (2) , Fax: <82> (2) enesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara mcorp, mcorp Trade entre, No.8, Jalan Persiaran Barat, Petaling Jaya, Selangor Darul hsan, Malaysia Tel: <603> , Fax: <603> enesas Technology orp., ll rights reserved. Printed in Japan. olophon.6.0

HD74LS191FPEL. Synchronous Up / Down 4-bit Binary Counter (single clock line) Features. REJ03D Rev.2.00 Feb

HD74LS191FPEL. Synchronous Up / Down 4-bit Binary Counter (single clock line) Features. REJ03D Rev.2.00 Feb Synchronous Up / own 4-bit Binary Counter (single clock line) REJ030453 0200 Rev.2.00 Feb.18.2005 Synchronous operation is provided by having all flip-flops clocked simultaneously so that the steering