2SA1083, 2SA1084, 2SA1085

Transcription

1 2SA8, 2SA84, 2SA85 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline TO-92 (1) Emitter 2. Collector. Base

2 2SA8, 2SA84, 2SA85 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA8 2SA84 2SA85 Unit Collector to base voltage V CBO V Collector to emitter voltage V CEO V Emitter to base voltage V EBO V Collector current I C ma Emitter current I E ma Collector power dissipation P C mw Junction temperature Tj C Storage temperature Tstg 55 to to to +150 C 2

3 2SA8, 2SA84, 2SA85 Electrical Characteristics (Ta = 25 C) 2SA8 2SA84 2SA85 Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage V (BR)CBO V I C = µa, I E = 0 V (BR)CEO V I C = 1 ma, R BE = V (BR)EBO V I E = µa, I C = 0 Collector cutoff current I CBO µa V CB = 50 V, I E = 0 Emitter cutoff current I EBO µa V EB = 2 V, I C = 0 DC current transfer ratio h FE * V CE = 12 V, I C = 2 ma Collector to emitter saturation voltage V CE(sat) V I C = ma, I B = 1 ma Base to emitter voltage V BE V V CE = 12 V, I C = 2 ma Gain bandwidth product f T MHz V CE = 12 V, I C = 2 ma Collector output capacitance Cob pf V CB = V, I E = 0, f = 1 MHz Noise voltage reffered to input e n nv/ Hz Note: 1. The 2SA8, 2SA84 and 2SA85 are grouped by h FE as follows. D E 250 to to 800 V CE = 6V, I C = ma, f = 1 khz, R g = 0, f = 1Hz

4 2SA8, 2SA84, 2SA85 Collector power dissipation P C (mw) Maximum Collector Dissipation Curve Collector current I C (ma) Typical Output Characteristics (1) µa I B = 0 P C = 0.4 W Ambient Temperature Ta ( C) Collector to Emitter Voltage V CE (V) Collector current I C (ma) Typical Output Characteristics (2) µa I B = Collector to Emitter Voltage V CE (V) Typicaol Transfer Characteristics V CE = 12 V Base to Emitter Voltage V BE (V) 4

5 2SA8, 2SA84, 2SA85 DC current teransfer ratio h FE 5,000 2,000 1, DC Current Transfer Ratio vs. Collector Current V CE = 12 V Pulse Collector to emitter saturation voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current I C = I B Base to emitter saturation voltage V BE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current I C = I B Gain bandwidth product f T (MHz) 2,000 1, Gain Bandwidth Product vs. Collector Current V CE = 12 V

6 2SA8, 2SA84, 2SA85 Collector output capacitance C ob (pf) Collector Output Capacitance vs. Collector to Base Voltage I E = 0 f = 1 MHz Collector to Base Voltage V CB (V) Singnal source resistance R g (kω) 0 0 Contours of Constant Noise Figure (1) NF = 0.5 db V CE = 6 V f = 1 khz Singnal source resistance R g (kω) Contours of Constant Noise Figure (2) NF = 0.5 db V CE = 6 V f = 120 Hz Singnal source resistance R g (kω) Contours of Constant Noise Figure () NF = 0.5 db V CE = 6 V f = Hz

7 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Unit: mm 4.8 ± 0..8 ± ± Max 0.5 ± Max 12.7 Min

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