HRF32. Silicon Schottky Barrier Diode for Rectifying. ADE D(Z) Rev 4 Jul Features. Ordering Information. Outline

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1 Silicon Schoky Barrier Diode for Recifying ADE D(Z) Rev 4 Jul Feaures Good for high-frequency recify. LRP srucure ensures higher reliabiliy. Ordering Informaion Type No. Laser Mark Package Code 32 LRP Ouline Cahode mark Mark Cahode 2. Anode

2 Absolue Maximum Raings (Ta = 25 C) Iem Symbol Value Uni Repeiive peak reverse volage V RRM *1 9 V Average recified curren I o *1 A Non-Repeiive peak forward surge curren I FSM *2 2 A Juncion emperaure Tj 125 C Sorage emperaure Tsg -4 o +125 C 1. See from Fig.4 o Fig.7 2. msec half sine wave 1 pulse Elecrical Characerisics (Ta = 25 C) Iem Symbol Min Typ Max Uni Tes Condiion Forward volage V F V I F = A Reverse curren I R ma V R = 9V ESD-Capabiliy 15 V C=2pF, R=Ω, Boh forward and reverse direcion 1 pulse. Thermal resisance Rh(j-a) 8 C/W Alumina board *1 157 Prin board *2 1. Alumina board (25mm ~25mm ~ mm 2. Prin board (25mm ~25mm ~ mm 2

3 Main Characerisic 4 1 Pulse es Pulse es Forward curren I (A) F Reverse curren I R (A) Forward volage V (V) F Reverse volage V R (V) Fig.1 Forward curren Vs. Forward volage Fig.2 Reverse curren Vs. Reverse volage 3 f=1mhz Pulse es Capaciance C (pf) 2 2 Reverse volage V (V) R Fig.3 Capaciance Vs. Reverse volage 3

4 Main Characerisic DC. V Forward power dissipaion Pd (W).6 A T D=1/6 D= \ T D=1/3 Reverse power dissipaion Pd (W) T D= \ T D=5/6 D=2/ Forward curren I F (A) Reverse volage V (V) Fig.4 Forward p ower dissipaion Vs. Forward curren Fig.5 Reverse power dissipaion Vs. Reverse volage DC V R =V RRM Tj=125 C Alumina Board V R =V RRM Tj=125 C Prin Board Average forward curren I O (A).6 D=1/3 D=1/6 Average forward curren I O (A).6 DC D=1/3 D=1/ Ambien emperaure Ta ( C) Fig.6 Average forward curren Vs. Ambien emperaure Ambien emperaure Ta ( C) Fig.7 Average forward curren Vs. Ambien emperaure 4

5 Package Dimensions Uni : mm Cahode Mark ± 2.5 ± ± 1 Cahode 5. ±.3 2 Anode ±.3 ±.3 2. ±.3 Hiachi Code JEDEC Code EIAJ Code Weigh (g) LRP.58 5

6 Cauions 1. Hiachi neiher warrans nor grans licenses of any righs of Hiachi s or any hird pary s paen, copyrigh, rademark, or oher inellecual propery righs for informaion conained in his documen. Hiachi bears no responsibiliy for problems ha may arise wih hird pary s righs, including inellecual propery righs, in connecion wih use of he informaion conained in his documen. 2. Producs and produc specificaions may be subjec o change wihou noice. Confirm ha you have received he laes produc sandards or specificaions before final design, purchase or use. 3. Hiachi makes every aemp o ensure ha is producs are of high qualiy and reliabiliy. However, conac Hiachi s sales office before using he produc in an applicaion ha demands especially high qualiy and reliabiliy or where is failure or malfuncion may direcly hreaen human life or cause risk of bodily injury, such as aerospace, aeronauics, nuclear power, combusion conrol, ransporaion, raffic, safey equipmen or medical equipmen for life suppor. 4. Design your applicaion so ha he produc is used wihin he ranges guaraneed by Hiachi paricularly for maximum raing, operaing supply volage range, hea radiaion characerisics, insallaion condiions and oher characerisics. Hiachi bears no responsibiliy for failure or damage when used beyond he guaraneed ranges. Even wihin he guaraneed ranges, consider normally foreseeable failure raes or failure modes in semiconducor devices and employ sysemic measures such as failsafes, so ha he equipmen incorporaing Hiachi produc does no cause bodily injury, fire or oher consequenial damage due o operaion of he Hiachi produc. 5. This produc is no designed o be radiaion resisan. 6. No one is permied o reproduce or duplicae, in any form, he whole or par of his documen wihou wrien approval from Hiachi. 7. Conac Hiachi s sales office for any quesions regarding his documen or Hiachi semiconducor producs. Hiachi, Ld. Semiconducor & Inegraed Circuis. Nippon Bldg., 2-6-2, Ohe-machi, Chiyoda-ku, Tokyo -4, Japan Tel: Tokyo (3) Fax: (3) URL NorhAmerica : hp:semiconducor.hiachi.com/ Europe : hp:// Asia (gapore) : hp:// Asia (Taiwan) : hp:// Asia (HongKong) : hp:// Japan : hp:// For furher informaion wrie o: Hiachi Semiconducor (America) Inc. 179 Eas Tasman Drive, San Jose,CA Tel: <1> (48) Fax: <1>(48) Hiachi Europe GmbH Elecronic componens Group Dornacher Sra e 3 D Feldkirchen, Munich Germany Tel: <49> (89) Fax: <49> (89) Hiachi Europe Ld. Elecronic Componens Group. Whiebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, Unied Kingdom Tel: <44> (1628) 585 Fax: <44> (1628) Hiachi Asia Pe. Ld. 16 Collyer Quay #2- Hiachi Tower gapore Tel: Fax: Hiachi Asia Ld. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa Norh Road, Taipei (5) Tel: <886> (2) Fax: <886> (2) Hiachi Asia (Hong Kong) Ld. Group III (Elecronic Componens) 7/F., Norh Tower, World Finance Cenre, Harbour Ciy, Canon Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) Fax: <852> (2) Telex: 4815 HITEC HX Copyrigh ' Hiachi, Ld., All righs reserved. Prined in Japan.

2SC1775, 2SC1775A. Silicon NPN Epitaxial. Application. Outline. Low frequency low noise amplifier Complementary pair with 2SA872/A TO-92 (1)

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