MBM200H45E2-H Silicon N-channel IGBT 4500V E2 version
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1 IGBT MODULE MBM2H45E2-H Silicon N-channel IGBT 45V E2 version Spec.No.IGBT-SP-2 R3 P FEATURES Low swiching loss IGBT module. Low noise due o ulra sof fas recovery diode. Isolaed hea sink (erminal o base). ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Iem Symbol Uni MBM2H45E2-H Collecor Emier Volage VCES V 4,5 Gae Emier Volage VGES V 2 Collecor Curren DC IC 2 (Tc=8 A C) ms ICp 4 Forward Curren DC IF 2 A ms IFM 4 Peak Forward Surge Curren IFSM Ap 5 (Tj=25, 5Hz, ms Half-sinewave) Toal Power Dissipaion Po W,96 (Tc=25 per IGBT) Juncion Temperaure Tj o C -4 ~ +25 Juncion Operaing Temperaure Tjop o C -4 ~ +25 Case Temperaure Tc o C -4 ~ +25 Sorage Temperaure Tsg o C -4 ~ +25 Isolaion Volage VISO VRMS 9, (AC minue) Screw Torque Terminals (M6) - 6 () N m Mouning (M6) - 6 () Noes: () Recommended Value 5.5.5N m ELECTRICAL CHARACTERISTICS (IGBT) Iem Symbol Uni Min. Typ. Max. Tes Condiions Collecor Emier Cu-Off Curren I CES ma Tj=25 o C Tj=25 o C VCE=4,5V, VGE=V Gae Emier Leakage Curren IGES na VGE= 2V, VCE=V, Tj=25 o C Collecor Emier Sauraion Volage VCE(sa) V Tj=25 o C Tj=25 o C IC=2A, VGE=5V Gae Emier Threshold Volage VGE(TO) V VCE=V, IC=2mA, Tj=25 o C Gae Charge Qg C VCC=28V, Ic=2A, VGE=+/-5V Inpu Capaciance Cies nf Oupu Capaciance Coes nf VCE=V,VGE=V, f=khz, Tj=25 o C Reverse ransfer capaciance Cres nf -. - Inernal Gae Resisance Rge VCE=V,VGE=V, f=khz, Tj=25 o C Rise Time r Tj=25 o C Tj=25 o C Swiching Times Tj=25 Turn On Time C VCC=2,8V, Ic=2A, on Tj=25 Ls=4nH, s C Tj=25 RG=2Ω (2), Fall Time C f Tj=25 o C VGE=+/-5V Turn Off Time off Tj=25 o C Tj=25 o C Eon(full) Tj=25 o C Turn On Loss Eon(%) J/p Tj=25 o C VCC=28V, Ic=2A, Eon(full) Tj=25 o C Ls=4nH Eoff(full) Tj=25 o C RG= 2Ω (2) Turn Off Loss Eoff(%) J/ p.65. Tj=25 o C VGE=+/-5V Eoff(full) Tj=25 o C Noes:(2) RG value is he es condiion s value for evaluaion of he swiching imes, no recommended value. Please, deermine he suiable RG value afer he measuremen of swiching waveforms (overshoo volage, ec.) wih appliance mouned. * Please conac our represenaives a order. * For improvemen, specificaions are subjec o change wihou noice. * For acual applicaion, please confirm his spec shee is he newes revision.
2 IGBT MODULE MBM2H45E2-H Spec.No.IGBT-SP-2 R3 P2 ELECTRICAL CHARACTERISTICS (DIODE) Iem Symbol Uni Min. Typ. Max. Tes Condiions Tj=25 Peak Forward Volage Drop VFM V o C IF=2A, VGE=V Tj=25 o C Tj=25 Reverse Recovery Time rr s o C Tj=25 o C Vcc=28V, Tj=25 Reverse Recovery Curren Irr A o C IF=2A, Ls=4nH Tj=25 o C RG= 2Ω - - Tj=25 Recovery charge Qrr C o C Tj=25 o C Err(full) Tj=25 o C VCC=28V,IF=2A, Reverse Recovery Loss Err(%) J/ p Tj=25 o C Ls=4nH, RG= 2Ω (3) Err(full) Tj=25 o C Noes:(3) RG value is he es condiion s value for evaluaion of he swiching imes, no recommended value. Please, deermine he suiable RG value afer he measuremen of swiching waveforms (overshoo volage, ec.) wih appliance mouned. THERMAL CHARACTERISTICS Iem Symbol Uni Min. Typ. Max. Tes Condiions Thermal Impedance IGBT Rh(j-c) K/W Juncion o case FWD Rh(j-c) Conac Thermal Impedance Rh(c-f) K/W Case o fin ( grease=w/(m K), hea-sink flaness 5um) MODULE MECHANICAL CHARACTERISTICS Iem Uni Characerisics Condiions Weigh g 84 Creepage Disance Beween erminal mm 54 Collecor-sense o Emier-main Terminal-Base mm 64 Clearance Disance Beween erminal mm 9 Collecor-sense o Emier-main Terminal-Base mm 35 Sray inducance in module LS(CM-EM) nh 4 Beween C- E2 Resisance, Terminal-chip RCC +EE m.5 Terminal o chip Comparaive Tracking Index (CTI) 6 Module base plae Maerial Cu Baseplae Thickness mm 5 Insulaion plae Maerial Al N Terminal Surface reamen Ni plaing Case Maerial Poly-Phenilene Sulfide
3 IGBT MODULE MBM2H45E2-H DEFINITION OF TEST CIRCUIT Ls Spec.No.IGBT-SP-2 R3 P3 LLOAD Vcc Rg G/D Fig. Swiching es circui Vce L VL Ic Ls= VL dic ( d ) =L Fig.2 Definiion of Ls Vce 9% % % r on 3 4 % 2 Ic Vge Ic Vge % 9% 5 9% % f off Vce -Ic.Vce Irm IF 9 rr Vce.5Irm.IF 2 4 Eon(%)= Ic Vce d 3 2 Eon(Full)= Ic Vce d 8 Eoff(%)= Ic Vce d 7 6 Eoff(Full)= Ic Vce d 5 2 Err(%)= IF Vce d Err(Full)= IF Vce d 9 Fig.3 Definiion of swiching loss
4 Forward Curen, IF (A) Collecor Curren, Ic (A) Collecor Curren, Ic (A) IGBT MODULE MBM2H45E2-H STATIC CHARACTERISTICS VGE=5V 3V 4 Typical 4 Tj=25 o C Spec.No.IGBT-SP-2 R3 P4 VGE=5V 3V Typical Tj=25 o C V 3 V V 9V 5 5 7V Collecor o Emier Volage, VCE(V) 7V Collecor o Emier Volage, VCE(V) Ic vs. VCE(Tj=25 o C) Ic vs. VCE(Tj=25 o C) 4 Typical VGE=V Tj=25 o C Tj=25 o C Forward Volage, VF(V) IF vs. VF
5 Reverse Recovery Loss, Err (J/pulse) Swiching ime, on,r,off,f,rr (us) Turn-off Loss, Eoff (J/pulse) IGBT MODULE MBM2H45E2-H DYNAMIC CHARACTERISTICS 3 Vcc=28V L=4nH RG=2Ω 3 Vcc=28V L=4nH RG=2Ω Spec.No.IGBT-SP-2 R3 P5 Eon(full) Turn-on Loss, Eon (J/pulse) 2 y = 9E-6x x y =.856E-9x E-7x E-3x E-2 Eoff(Full) Eon(%) Eoff(%) Collecor Curren, Ic (A) Turn-on loss vs. Collecor curren Collecor Curren, Ic (A) Turn-off loss vs. Collecor curren.8 Vcc=28V L=4nH RG=2Ω Vcc=28V L=4nH RG=2Ω.6 off 5 y = -2E-6x 2 +.7x on Err(Full) f r.2 Err(%) Collecor Curren, IF (-Ic) (A) Recovery loss vs. Forward curren rr Collecor Curren, IC,IF(A) Swiching ime vs. Collecor curren
6 Reverse Recovery Loss, Err (J/pulse) Swiching ime, on,r,off,f,rr (us) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) IGBT MODULE MBM2H45E2-H DYNAMIC CHARACTERISTICS 3 2 Vcc=28V Vcc=28V Ic=2A Ic=2A L=4nH L=4nH Spec.No.IGBT-SP-2 R3 P6 2 Eon(full) Eoff(Full) Eoff(%) Eon(%) Gae Resisance, RG (Ω) Turn-on loss vs. Gae Resisance Gae Resisance, RG (Ω) Turn-off loss vs. Gae Resisance.5.4 Vcc=28V Ic=2A L=4nH Condiions Vcc=28V Ic=2A L=4nH on.3 Err(%) 5 off.2 Err(Full) r. f Gae Resisance, RG (Ω) rr Gae Resisance, RG (Ω) Recovery loss vs. Gae Resisance Swiching ime vs. Gae Resisance
7 IC(A) IR(A) Cies, Coes, Cres (nf) VGE (V) IGBT MODULE. MBM2H45E2-H 5 Spec.No.IGBT-SP-2 R3 P7 Condiions: Ls=4nH,VCC=28V,VGE=+/-5V, RG(on/off)=22 /22,Tj=25 o C, Cies. 5. Coes -5 Cres -. Collecor o Emier Volage, VCE (V) Capaciance Cies, vs. Collecor Coes, Cres o Emier VCE Volage QG (uc) QG-VGE Curve Vcc 34V,IF 4A di/d,a/us Tj=25 o C Ls 4nH 3 3 Pmax=.5MW 2 2 Vcc 34V Tj=25 RG 2Ω,VGE=+-5V Ls 4nH Pulse widh μs VCE( spike Volage ) IC( o be urned off ) Ic Vce Definiion of RBSOA waveform VCE (V) *Defined a auxiliary erminals RBSOA VR(V) *Defined a auxiliary erminals RecSOA
8 Transien hermal impedance : Zh(j-c) (K/W) IGBT MODULE MBM2H45E2-H TRANSIENT THERMAL IMPEDANCE Spec.No.IGBT-SP-2 R3 P8 Maximum. FWD IGBT..... Time : (s) Curve approximaion model (Σrh[n]*(-exp(-/τh[n]))) Transien Thermal Impedance Curve n Uni τ h[n].85e- 4.E-2 2.8E-3.54E-3 sec rh[n,igbt] 2.83E-2.64E E E- K/W rh[n,diode] 5.55E-2 3.4E-2.4E-2.E-4 K/W Maerial Declaraion Please noe he following maerial is conained in he produc in order o keep produc characerisic and reliabiliy level. Maerial Lead (Pb) and is compounds Conained par Solder
9 IGBT MODULE MBM2H45E2-H Module Ouline Drawing Spec.No.IGBT-SP-2 R3 P9 Uni: mm CIRCUIT DIAGRAM C C G E E/C2 G2 E2 E2
10 IGBT MODULE MBM2H45E2-H Spec.No.IGBT-SP-2 R3 P HITACHI POWER SEMICONDUCTORS Noices. The informaion given herein, including he specificaions and dimensions, is subjec o change wihou prior noice o improve produc characerisics. Before ordering, purchasers are advised o conac Hiachi sales deparmen for he laes version of his daa shees. 2. Please be sure o read "Precauions for Safe Use and Noices" in he individual brochure before use. 3. In cases where exremely high reliabiliy is required (such as use in nuclear power conrol, aerospace and aviaion, raffic equipmen, life-suppor-relaed medical equipmen, fuel conrol equipmen and various kinds of safey equipmen), safey should be ensured by using semiconducor devices ha feaure assured safey or by means of users fail-safe precauions or oher arrangemen. Or consul Hiachi s sales deparmen saff. 4. In no even shall Hiachi be liable for any damages ha may resul from an acciden or any oher cause during operaion of he user s unis according o his daa shees. Hiachi assumes no responsibiliy for any inellecual propery claims or any oher problems ha may resul from applicaions of informaion, producs or circuis described in his daa shees. 5. In no even shall Hiachi be liable for any failure in a semiconducor device or any secondary damage resuling from use a a value exceeding he absolue maximum raing. 6. No license is graned by his daa shees under any paens or oher righs of any hird pary or Hiachi Power Semiconducor Device, Ld. 7. This daa shees may no be reproduced or duplicaed, in any form, in whole or in par, wihou he expressed wrien permission of Hiachi Power Semiconducor Device, Ld. 8. The producs (echnologies) described in his daa shees are no o be provided o any pary whose purpose in heir applicaion will hinder mainenance of inernaional peace and safey no are hey o be applied o ha purpose by heir direc purchasers or any hird pary. When exporing hese producs (echnologies), he necessary procedures are o be aken in accordance wih relaed laws and regulaions. For inquiries relaing o he producs, please conac neares overseas represenaives ha is locaed Inquiry porion on he op page of a home page. Hiachi power semiconducor home page address hp://
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<IGBT Modules> CM150TX-24S HIGH POWER SWITCHING USE INSULATED TYPE
sixpack (3φ Inverer) Collecor curren...... 5 A Collecor-emier volage CES... Maximum juncion emperaure T jmax... 7 5 C Fla base Type APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE
RoHS Directive compliant UL Recognized under UL1557, File E APPLICATION
CM5DX-24A CM5DX-24A - 5 h Generaion NX series - I C.... 5 A CES....... 2 Fla base Type Copper base plae (non-plaing) Dual (Half-Bridge) RoHS Direcive complian UL Recognized under UL557, File E323585 APPLICATION
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package
MTI2WX75GD Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 75 V 25 = 255 R DSon yp. = 1.1 mw Par number MTI2WX75GD G1 L1+ L2+ T1 T3 T5 G3 G5 L3+ Surface Moun Device S1
C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI75VA-12-5 IGBT MODULE (V series) 12V / 75A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Tc=100 C 300 Tc=25 C 360 Collector current
2MBI3VH-12-5 IGBT MODULE (V series) 12V / 3A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI6VD-6-5 IGBT MODULE (V series) 6V / 6A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View
HEXFET Power MOSFET dvanced Process Technology Ulra Low On-Resisance ual N and P Channel Mosfe Surface Moun vailable in Tape & Reel ynamic dv/d Raing Fas Swiching escripion PRELIMINRY N-CHNNEL MOSFET 8
Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package
MTI145WX1GD Three phase full Bridge wih Trench MOSFETs in DCB-isolaed high-curren package S = 1 V 5 = 19 R DSon yp. = 1.7 mw Par number MTI145WX1GD L1+ L+ L3+ G1 G3 G5 Surface Moun Device S1 S3 S5 L1 L
Obsolete Product(s) - Obsolete Product(s)
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM rr (yp) VF (max) FEATURES AND BENEFITS 3 A 1200 V 65 ns 1.7 V SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING,
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VR-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200
1MBI36VD-12P IGBT MODULE (V series) 36V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Tc=25 C 1800 Tc=100 C 1400 Collector current
2MBI4VXB-2P-5 IGBT MODULE (V series) 2V / 4A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor
<IGBT Modules> CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE
dual swich (Half-Bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren IC...... A Collecor-emier volage VCES... 2 V Maximum juncion
IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
MBI3VG-R-5 IGBT MODULE (V series) V / 3A / IGBT, V/3A/RB-IGBT, in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module sucture Featuring Reverse Blocking IGBT
Viso AC : 1min VAC
MBIVA5 IGBT MODULE (V series) V / A / in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VC-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package
MBIVN--5 IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100
7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Ic Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W
7MBR35VP15 IGBT MODULE (V series) 1V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VB1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400
1MBI12VC-12P IGBT MODULE (V series) 12V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Tc=25 C 1800 Tc=100 C 1400 Collector current
2MBI14VXB-17E-5 IGBT MODULE (V series) 17V / 14A / 2 in one package Inverter Inverter Thermistor 1 Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for
Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VA5 IGBT MODULE (V series) V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
7MBR35VKB125 IGBT MODULE (V series) 12V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50
IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100
6MBIVB125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V
IGBT MODULE (V series) V / 9A / 1 in one package Features High speed switching Voltage drive Low Inductance module sucture Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR1VB65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous
1MBI2U4H-12L-5 IGBT MODULE (U series) 12V / 2A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive
MBM900FS17F Silicon N-channel IGBT 1700V F version
Silicon N-channel IGBT 1700V F version Spec.No.IGBT-SP-15013 R0 P1 C1 FEATURES High current rate package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable large
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450
IGBT MODULE (V series) V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
<IGBT Modules> CM600DX-24T/CM600DXP-24T HIGH POWER SWITCHING USE INSULATED TYPE
DX DXP dual swich (half-bridge) Collecor curren IC...... 6 0 0 A Collecor-emier volage VCES... 1 2 0 0 V Maximum juncion emperaure T vjmax... 1 7 5 C Fla base ype Copper base plae (Nickel-plaing) RoHS
Continuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5
6MBI45V25 IGBT MODULE (V series) 2V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) RoHS Compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier
<IGBT Modules> CM600DX-13T/CM600DXP-13T HIGH POWER SWITCHING USE INSULATED TYPE
DX DXP dual swich (half-bridge) Collecor curren IC...... Collecor-emier volage VCES... 6 0 0 A 6 5 0 V Maximum juncion emperaure T vjmax... 1 7 5 C Fla base ype Copper base plae (Nickel-plaing) RoHS Direcive
IXFN64N50PD2 IXFN64N50PD3
PolarHV TM HiPerFET Power MOSFETs Boos & Buck Configuraions (Ulra-fas FRED Diode) IXFN6N5PD IXFN6N5PD S I D5 R DS(on) = = 5A 85m ns N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic Diode D D minibloc
IGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package
MBIVN-- IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
1N Amp SCHOTTKY RECTIFIER. Bulletin PD rev. C 11/02. Description/ Features. Major Ratings and Characteristics
SCHOTTKY ECTIFIE 60 Amp Major aings and Characerisics Descripion/ Feaures TO-203AB (DO-5) Characerisics Unis I F(AV) ecangular 60* A waveform V WM 45* V I FSM @ 60Hz 000* A V F @ 60 Apk, T = 25 C 0.68*
Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR3VKA65 IGBT MODULE (V series) 6V / 3A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Item Symbol Unit MSM600FS33ALT Drain Source Voltage VDSS V 3,300 Gate Source Voltage VGSS V +20/-15 Drain Current. 600 A 1ms IDM 1,200 Source Current
SiC MODULE SiC MOSFET 3300V Spec.No.IGBT-SP-18021R0 P 1 FEATURES Ultra low switching loss with SiC MOSFET High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature
Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20
7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W
FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
IGBT MODULE (V series) V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
TC=25 C, Tj=150 C Note *1
FGW75N6HD (High-Speed V series) 6V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
H037N06L Feaures Low On-Resisance Fas Swiching 100% Avalanche Tesed Repeiive Avalanche Allowed up o Tjmax Lead-Free, RoHS omplian Descripion H037N06L designed by he rench processing echniques o achieve
AK8777B. Overview. Features
AK8777B Hall Effec IC for Pulse Encoders Overview The AK8777B is a Hall effec lach which deecs boh verical and horizonal (perpendicular and parallel o he marking side of he package) magneic field a he
VCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W
FGWNHD (High-Speed V series) V / A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner
MX6895BETR. -550V Full Bridge Gate Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications. Ordering Information
-550V Full Bridge Gae Driver INTEGRATED CIRCUITS DIVISION Feaures Full Bridge Gae Driver Inernal High Volage Level Shif Funcion Negaive 550V Lamp Supply Volage 3V o 12V CMOS Logic Compaible 8V o 12V Inpu
90SQ... SERIES. 9 Amp SCHOTTKY RECTIFIER. Bulletin PD rev. E 06/05. Description/ Features. Major Ratings and Characteristics
90SQ... SEIES SCHOTTKY ECTIFIE 9 Amp Major aings and Characerisics Characerisics 90SQ... Unis I F(A) ecangular 9 A waveform M range 30 / 4 I FSM @ p = µs sine 20 A F @ 9 Apk, T = 2 C 0.42 range - o 0 C
Impacts of the dv/dt Rate on MOSFETs Outline:
Ouline: A high dv/d beween he drain and source of he MOSFET may cause problems. This documen describes he cause of his phenomenon and is counermeasures. Table of Conens Ouline:... 1 Table of Conens...
2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules
Power Module (V series) 1V / 15A / 2-in-1 package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines,such as Welding
ORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF
www.addmek.com DESCRIPTI is a PWM power ED driver IC. The driving curren from few milliamps up o 1.5A. I allows high brighness power ED operaing a high efficiency from 4Vdc o 40Vdc. Up o 200KHz exernal
BAV70WT1G SBAV70WT1G Dual Switching Diode Common Cathode
BA70WT1G, SBA70WT1G Dual Swiching Diode Common Cahode Feaures AECQ101 Qualified and PPAP Capable S Prefix for Auomoive and Oher Applicaions Requiring Unique Sie and Conrol Change Requiremens These Devices
Chapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and
80/110A N-hannel Advanced Power MOSFET Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion S80110AT designed by he rench processing