Diode RapidSwitchingEmitterControlledDiode. IDP20E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl

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1 Diode RapidSwichingEmierConrolledDiode IDP20E65D2 EmierConrolledDiode Daashee IndusrialPowerConrol

2 EmierConrolledDiode RapidSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions 650VEmierConrolledechnology Fasrecovery Sofswiching Lowreverserecoverycharge Lowforwardvolageandsableoveremperaure 175 Cjuncionoperaingemperaure Easyparalleling Pbfreeleadplaing;RoHScomplian Applicaions: C A C BoosdiodeinCCMPFC C A KeyPerformanceandPackageParameers Type Vrrm If Vf,Tvj=25 C Tvjmax Marking Package IDP20E65D2 650V 20A 1.6V 175 C E20ED2 PGTO Rev.2.1,

3 EmierConrolledDiode TableofConens Descripion Table of Conens Maximum Raings Thermal Resisance Elecrical Characerisics Elecrical Characerisics Diagrams Package Drawing Tesing Condiions Revision Hisory Disclaimer Rev.2.1,

4 EmierConrolledDiode MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed80%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Repeiivepeakreversevolage,Tvj 25 C VRRM 650 V Diodeforwardcurren,limiedbyTvjmax TC=25 C TC=100 C IF Diodepulsedcurren,plimiedbyTvjmax IFpuls 60.0 A Diode surge non repeiive forward curren TC=25 C,p=8.3ms,sinehalfwave IFSM PowerdissipaionTC=25 C Po W Operaing juncion emperaure Tvj C Sorage emperaure Tsg C Soldering emperaure, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 Mouning orque, M3 screw Maximum of mouning processes: 3 A A C M 0.6 Nm ThermalResisance Parameer Symbol Condiions Max.Value Uni Characerisic Diode hermal resisance, 1) juncion case Thermal resisance juncion ambien Rh(jc) 1.25 K/W Rh(ja) 62 K/W ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Diode forward volage Reverse leakage curren VF IR IF=20.0A Tvj=25 C Tvj=175 C VR=650V Tvj=25 C Tvj=175 C V µa ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inernal emier inducance measured 5mm (0.197 in.) from case LE 7.0 nh 1) Please be aware ha in non sandard load condiions, due o high Rh(jc), Tvj close o Tvjmax can be reached. 4 Rev.2.1,

5 EmierConrolledDiode SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=25 C Diode reverse recovery ime rr Tvj=25 C, 32 ns Diode reverse recovery charge VR=400V, Qrr 0.25 µc IF=20.0A, Diode peak reverse recovery curren Irrm dif/d=1000a/µs, 12.2 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 900 A/µs recoverycurrenduringb swich IKW50N65H5 Diode reverse recovery ime rr Tvj=25 C, 43 ns Diode reverse recovery charge VR=400V, Qrr 0.19 µc IF=20.0A, Diode peak reverse recovery curren Irrm dif/d=400a/µs, 6.3 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 420 A/µs recoverycurrenduringb swich IKW50N65H5 SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=175 C/125 C Diode reverse recovery ime rr Tvj=175 C, 55 ns Diode reverse recovery charge VR=400V, Qrr 0.58 µc IF=20.0A, Diode peak reverse recovery curren Irrm dif/d=1000a/µs, 18.0 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 650 A/µs recoverycurrenduringb swich IKW50N65H5 Diode reverse recovery ime rr Tvj=125 C, 61 ns Diode reverse recovery charge VR=400V, Qrr 0.38 µc IF=20.0A, Diode peak reverse recovery curren Irrm dif/d=400a/µs, 9.3 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 500 A/µs recoverycurrenduringb swich IKW50N65H5 5 Rev.2.1,

6 EmierConrolledDiode 120 Po,POWERDISSIPATION[W] TC,CASETEMPERATURE[ C] Figure 1. Powerdissipaionasafuncionofcase emperaure (Tvj 175 C) Zh(jc),TRANSIENTTHERMALRESISTANCE[K/W] D= E6 1E5 1E p,pulsewidth[s] single pulse i: ri[k/w]: E3 τi[s]: 2.3E5 1.4E4 9.5E4 5.2E Figure 2. Dioderansienhermalimpedanceasa funcionofpulsewidh (D=p/T) Tj=25 C, IF = 20A Tj=175 C, IF = 20A Tj=25 C, IF = 20A Tj=175 C, IF = 20A rr,reverserecoverytime[ns] Qrr,REVERSERECOVERYCHARGE[µC] dif/d,diodecurrentslope[a/µs] Figure 3. Typicalreverserecoveryimeasafuncionof diodecurrenslope (VR=400V) dif/d,diodecurrentslope[a/µs] Figure 4. Typicalreverserecoverychargeasafuncion ofdiodecurrenslope (VR=400V) Rev.2.1,

7 EmierConrolledDiode 30 Tj=25 C, IF = 20A Tj=175 C, IF = 20A 0 Tj=25 C, IF = 20A Tj=175 C, IF = 20A Irrm,REVERSERECOVERYCURRENT[A] dirr/d,diodepeakraeoffallofirr[a/µs] dif/d,diodecurrentslope[a/µs] Figure 5. Typicalpeakreverserecoverycurrenasa funcionofdiodecurrenslope (VR=400V) dif/d,diodecurrentslope[a/µs] Figure 6. Typicaldiodepeakraeoffallofreverse recoverycurrenasafuncionofdiode currenslope (VR=400V) Tj=25 C Tj=175 C IF=10A IF=20A IF=40A IF,FORWARDCURRENT[A] VF,FORWARDVOLTAGE[V] VF,FORWARDVOLTAGE[V] Figure 7. Typicaldiodeforwardcurrenasafuncionof forwardvolage Tvj,JUNCTIONTEMPERATURE[ C] Figure 8. Typicaldiodeforwardvolageasafuncionof juncionemperaure 7 Rev.2.1,

8 IDP20E65D2 Emier Conrolled Diode PGTO Rev. 2.1,

9 IDP20E65D2 Emier Conrolled Diode vge() 90% VGE a a 10% VGE b b ic() 90% IC 90% IC 10% IC 10% IC vce() d(off) f d(on) r vge() 90% VGE 10% VGE ic() CC 2% IC vce() 2 E = off V CE 4 x IC x d E 1 1 on = V CE x IC x d 2% VCE Rev. 2.1,

10 IDP20E65D2 Emier Conrolled Diode Revision Hisory IDP20E65D2 Revision: , Rev. 2.1 Previous Revision Revision Dae Subjecs (major changes since las revision) Final daa shee We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: Published by Infineon Technologies AG Munich, Germany München, Germany 2014 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office ( Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 10 Rev. 2.1,

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