PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View

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1 HEXFET Power MOSFET dvanced Process Technology Ulra Low On-Resisance ual N and P Channel Mosfe Surface Moun vailable in Tape & Reel ynamic dv/d Raing Fas Swiching escripion PRELIMINRY N-CHNNEL MOSFET 8 P-CHNNEL MOSFET Fourh Generaion HEXFETs from Inernaional Recifier uilize advanced processing echniques o achieve he lowes possible on-resisance per silicon area. This benefi, combined wih he fas swiching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides he designer wih an exremely efficien device for use in a wide variey of applicaions. The SO-8 has been modified hrough a cusomized leadframe for enhanced hermal characerisics and muliple-die capabiliy making i ideal in a variey of power applicaions. Wih hese improvemens, muliple devices can be used in an applicaion wih dramaically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering echniques. Power dissipaion of greaer han.8w is possible in a ypical PCB moun applicaion. S G S2 G2 2 3 Top iew P B IRF76 N-Ch P-Ch SS 2-2 R S(on).25Ω.2Ω I SO-8 bsolue Maximum Raings Parameer Max. Unis T C = 25 C Coninuous rain Curren, T C = 7 C Coninuous rain Curren, I M Pulsed rain Curren - C = 25 C Power issipaion 2. W Linear eraing Facor.6 W/ C GS Gae-o-Source olage ± 2 dv/d Peak iode Recovery dv/d /ns T J, T STG Juncion and Sorage Temperaure Range -55 o + 5 C Thermal Resisance Parameer Min. Typ. Max. Unis R θj Juncion-o-mbien (PCB Moun)** 62.5 C/W ** When mouned on " square PCB (FR-4 or G- Maerial). For recommended fooprin and soldering echniques refer o applicaion noe #N-994. Revision 3 69

2 IRF76 Elecrical (unless oherwise specified) Parameer Min. Typ. Max. Unis Condiions N-Ch 2 GS =, I = 25µ (BR)SS rain-o-source Breakdown olage P-Ch -2 GS =, I = -25µ N-Ch.37 Reference o 25 C, I = m (BR)SS / T J Breakdown olage Temp. Coefficien / C P-Ch -.22 Reference o 25 C, I = -m R S(ON) Saic rain-o-source On-Resisance.25 GS =, I =. N-Ch.25 GS = 4.5, I =.5 Ω.2 GS = -, I = -. P-Ch.35 GS = -4.5, I = -.5 N-Ch. S = GS, I = 25µ GS(h) Gae Threshold olage P-Ch -. S = GS, I = -25µ g N-Ch 4.4 S = 5, I = 3. fs Forward Transconducance S P-Ch 3. S = -5, I = -3. N-Ch 2. S = 6, GS = I P-Ch -2. S = -6, GS = SS rain-o-source Leakage Curren µ N-Ch 25 S = 6, GS =, P-Ch -25 S = -6, GS =, I GSS Gae-o-Source Forward Leakage N-P ± n GS = ± 2 Q N-Ch g Toal Gae Charge P-Ch 25 I N-Ch.2 = 2.3, S =, GS = Q gs Gae-o-Source Charge nc P-Ch.6 Q N-Ch 2.5 gd Gae-o-rain ("Miller") Charge I P-Ch 3.5 = -2.3, S = -, GS = - N-Ch 5. 5 d(on) Turn-On elay Time P-Ch 4 N-Ch 2 = 2, I =., R G = 6.Ω, r Rise Time R P-Ch 5 4 = 2Ω ns N-Ch 29 5 d(off) Turn-Off elay Time P-Ch 4 9 N-Ch 22 5 = -2, I = -., R G = 6.Ω, f Fall Time R P-Ch 39 6 = 2Ω L Inernal rain Inducace N-P 4. Beween lead ip nh L S Inernal Source Inducance N-P 6. and cener of die conac C iss C rss Impu Capaciance C oss Oupu Capaciance Reverse Transfer Capaciance Source-rain Raings and Characerisics N-Ch 3 P-Ch 28 N-Ch 26 P-Ch 25 N-Ch 62 P-Ch 86 Parameer Min. Typ. Max. Unis Condiions I S Coninuous Source Curren (Body iode) N-Ch.7 P-Ch -.6 I SM Pulsed Source Curren (Body iode) N-Ch P-Ch - S rr Q rr iode Forward olage Reverse Recovery Time Reverse Recovery Charge N-Ch.9.2, I S =.6, GS = P-Ch , I S = -.3, GS = N-Ch 69 ns P-Ch 69, I F =.25, di/d = /µs N-Ch 58 2 nc P-Ch 9 8, I F = -.25, di/d = /µs on Forward Turn-On Time N-P Inrinsic urn-on ime is neglegible (urn-on is dominaed by L S +L ) Noes: Repeiive raing; pulse widh limied by max. juncion emperaure. ( See fig. 23 ) pf GS =, S = 5, ƒ =.MHz GS =, S = -5, ƒ =.MHz I S 2.3, di/d /µs, (BR)SS, T J 5 C I S -2.3, di/d 5/µs, (BR)SS, T J 5 C Pulse widh 3µs; duy cycle 2%. 7

3 IRF76 I, rain-o-source Curren () GS TOP BOTTOM I, rain-o-source Curren () GS TOP BOTTOM µs PULSE WITH... S, rain-o-source olage () Fig. Typical Oupu Characerisics, T J = 25 o C I, rain-o-source Curren () T J = 5 C S = 5 2µs PULSE WITH GS, Gae-o-Source olage () Fig 3. Typical Transfer Characerisics 2µs PULSE WITH. T J = 5 C.. S, rain-o-source olage () Fig 2. Typical Oupu Characerisics, T J = 5 o C R S(on), rain-o-source On Resisance (Normalized) I = 3. GS = T J, Juncion Temperaure ( C) Fig 4. Normalized On-Resisance s. Temperaure C, Capaciance (pf) GS =, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + C gd C oss C iss C rss, Gae-o-Source olage () GS I = 2.3 S = S, rain-o-source olage () Fig 5. Typical Capaciance s. rain-o-source olage 7 FOR TEST CIRCUIT SEE FIGURE Q, Toal Gae Charge (nc) G Fig 6. Typical Gae Charge s. Gae-o-Source olage

4 IRF76 I S, Reverse rain Curren () T J = 5 C I, rain Curren () OPERTION IN THIS RE LIMITE BY RS(on) ms ms ms T = 25 C T J = 5 C GS =. Single Pulse S, Source-o-rain olage () S, rain-o-source olage () Fig 7. Typical Source-rain iode Forward olage 3. Fig 8. Maximum Safe Operaing rea 2.5 I, rain Curren (mps) Fig a. Swiching Time Tes Circui T, mbien Temperaure ( C) Fig 9. Maximum rain Curren s. mbien Temperaure Fig b. Swiching Time Waveforms Fig a. Gae Charge Tes Circui Fig b. Basic Gae Charge Waveform 72

5 IRF76 -I, rain-o-source Curren () GS TOP BOTTOM µs PULSE WITH 2µs PULSE WITH.. T J = 5 C.. - S, rain-o-source olage () - S, rain-o-source olage () Fig 2. Typical Oupu Characerisics, T J = 25 o C -I, rain-o-source Curren () GS TOP BOTTOM Fig 3. Typical Oupu Characerisics, T J = 5 o C -I, rain-o-source Curren () T J = 5 C S = -5 2µs PULSE WITH GS, Gae-o-Source olage () Fig 4. Typical Transfer Characerisics C, Capaciance (pf) C oss C iss C rss GS =, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd - S, rain-o-source olage () Fig 6. Typical Capaciance s. rain-o-source olage 73 R S(on), rain-o-source On Resisance (Normalized) I = -2.5 GS = T J, Juncion Temperaure ( C) Fig 5. Normalized On-Resisance s. Temperaure - GS, Gae-o-Source olage () I = -2.3 S = - FOR TEST CIRCUIT SEE FIGURE Q G, Toal Gae Charge (nc) Fig 7. Typical Gae Charge s. Gae-o-Source olage

6 IRF76 -I S, Reverse rain Curren () T J = 5 C GS = S, Source-o-rain olage () Fig 8. Typical Source-rain iode Forward olage -I, rain Curren () OPERTION IN THIS RE LIMITE BY RS(on) ms ms ms T = 25 C T J = 5 C Single Pulse.. - S, rain-o-source olage () Fig 9. Maximum Safe Operaing rea 2.5 -I, rain Curren (mps) Fig 2a. Swiching Time Tes Circui T, mbien Temperaure ( C) Fig 2. Maximum rain Curren s. mbien Temperaure Fig 2b. Swiching Time Waveforms Fig 22a. Gae Charge Tes Circui Fig 22b. Basic Gae Charge Waveform 74

7 N-P Channel IRF76 Thermal Response (Z hj ) = SINGLE PULSE (THERML RESPONSE) 2. P ea k T J = P M x Z h J + T......, Recangular Pulse uraion (sec) N oes:. uy fac or = / 2 Fig 23. Maximum Effecive Transien Thermal Impedance, Juncion-o-mbien P M 2 Refer o he ppendix Secion for he following: ppendix : Figure 24, Peak iode Recovery dv/d Tes Circui See page 329. ppendix B: Package Ouline Mechanical rawing See page 332. ppendix C: Par Marking Informaion See page 332. ppendix : Tape and Reel Informaion See page

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