PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View
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1 HEXFET Power MOSFET dvanced Process Technology Ulra Low On-Resisance ual N and P Channel Mosfe Surface Moun vailable in Tape & Reel ynamic dv/d Raing Fas Swiching escripion PRELIMINRY N-CHNNEL MOSFET 8 P-CHNNEL MOSFET Fourh Generaion HEXFETs from Inernaional Recifier uilize advanced processing echniques o achieve he lowes possible on-resisance per silicon area. This benefi, combined wih he fas swiching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides he designer wih an exremely efficien device for use in a wide variey of applicaions. The SO-8 has been modified hrough a cusomized leadframe for enhanced hermal characerisics and muliple-die capabiliy making i ideal in a variey of power applicaions. Wih hese improvemens, muliple devices can be used in an applicaion wih dramaically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering echniques. Power dissipaion of greaer han.8w is possible in a ypical PCB moun applicaion. S G S2 G2 2 3 Top iew P B IRF76 N-Ch P-Ch SS 2-2 R S(on).25Ω.2Ω I SO-8 bsolue Maximum Raings Parameer Max. Unis T C = 25 C Coninuous rain Curren, T C = 7 C Coninuous rain Curren, I M Pulsed rain Curren - C = 25 C Power issipaion 2. W Linear eraing Facor.6 W/ C GS Gae-o-Source olage ± 2 dv/d Peak iode Recovery dv/d /ns T J, T STG Juncion and Sorage Temperaure Range -55 o + 5 C Thermal Resisance Parameer Min. Typ. Max. Unis R θj Juncion-o-mbien (PCB Moun)** 62.5 C/W ** When mouned on " square PCB (FR-4 or G- Maerial). For recommended fooprin and soldering echniques refer o applicaion noe #N-994. Revision 3 69
2 IRF76 Elecrical (unless oherwise specified) Parameer Min. Typ. Max. Unis Condiions N-Ch 2 GS =, I = 25µ (BR)SS rain-o-source Breakdown olage P-Ch -2 GS =, I = -25µ N-Ch.37 Reference o 25 C, I = m (BR)SS / T J Breakdown olage Temp. Coefficien / C P-Ch -.22 Reference o 25 C, I = -m R S(ON) Saic rain-o-source On-Resisance.25 GS =, I =. N-Ch.25 GS = 4.5, I =.5 Ω.2 GS = -, I = -. P-Ch.35 GS = -4.5, I = -.5 N-Ch. S = GS, I = 25µ GS(h) Gae Threshold olage P-Ch -. S = GS, I = -25µ g N-Ch 4.4 S = 5, I = 3. fs Forward Transconducance S P-Ch 3. S = -5, I = -3. N-Ch 2. S = 6, GS = I P-Ch -2. S = -6, GS = SS rain-o-source Leakage Curren µ N-Ch 25 S = 6, GS =, P-Ch -25 S = -6, GS =, I GSS Gae-o-Source Forward Leakage N-P ± n GS = ± 2 Q N-Ch g Toal Gae Charge P-Ch 25 I N-Ch.2 = 2.3, S =, GS = Q gs Gae-o-Source Charge nc P-Ch.6 Q N-Ch 2.5 gd Gae-o-rain ("Miller") Charge I P-Ch 3.5 = -2.3, S = -, GS = - N-Ch 5. 5 d(on) Turn-On elay Time P-Ch 4 N-Ch 2 = 2, I =., R G = 6.Ω, r Rise Time R P-Ch 5 4 = 2Ω ns N-Ch 29 5 d(off) Turn-Off elay Time P-Ch 4 9 N-Ch 22 5 = -2, I = -., R G = 6.Ω, f Fall Time R P-Ch 39 6 = 2Ω L Inernal rain Inducace N-P 4. Beween lead ip nh L S Inernal Source Inducance N-P 6. and cener of die conac C iss C rss Impu Capaciance C oss Oupu Capaciance Reverse Transfer Capaciance Source-rain Raings and Characerisics N-Ch 3 P-Ch 28 N-Ch 26 P-Ch 25 N-Ch 62 P-Ch 86 Parameer Min. Typ. Max. Unis Condiions I S Coninuous Source Curren (Body iode) N-Ch.7 P-Ch -.6 I SM Pulsed Source Curren (Body iode) N-Ch P-Ch - S rr Q rr iode Forward olage Reverse Recovery Time Reverse Recovery Charge N-Ch.9.2, I S =.6, GS = P-Ch , I S = -.3, GS = N-Ch 69 ns P-Ch 69, I F =.25, di/d = /µs N-Ch 58 2 nc P-Ch 9 8, I F = -.25, di/d = /µs on Forward Turn-On Time N-P Inrinsic urn-on ime is neglegible (urn-on is dominaed by L S +L ) Noes: Repeiive raing; pulse widh limied by max. juncion emperaure. ( See fig. 23 ) pf GS =, S = 5, ƒ =.MHz GS =, S = -5, ƒ =.MHz I S 2.3, di/d /µs, (BR)SS, T J 5 C I S -2.3, di/d 5/µs, (BR)SS, T J 5 C Pulse widh 3µs; duy cycle 2%. 7
3 IRF76 I, rain-o-source Curren () GS TOP BOTTOM I, rain-o-source Curren () GS TOP BOTTOM µs PULSE WITH... S, rain-o-source olage () Fig. Typical Oupu Characerisics, T J = 25 o C I, rain-o-source Curren () T J = 5 C S = 5 2µs PULSE WITH GS, Gae-o-Source olage () Fig 3. Typical Transfer Characerisics 2µs PULSE WITH. T J = 5 C.. S, rain-o-source olage () Fig 2. Typical Oupu Characerisics, T J = 5 o C R S(on), rain-o-source On Resisance (Normalized) I = 3. GS = T J, Juncion Temperaure ( C) Fig 4. Normalized On-Resisance s. Temperaure C, Capaciance (pf) GS =, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + C gd C oss C iss C rss, Gae-o-Source olage () GS I = 2.3 S = S, rain-o-source olage () Fig 5. Typical Capaciance s. rain-o-source olage 7 FOR TEST CIRCUIT SEE FIGURE Q, Toal Gae Charge (nc) G Fig 6. Typical Gae Charge s. Gae-o-Source olage
4 IRF76 I S, Reverse rain Curren () T J = 5 C I, rain Curren () OPERTION IN THIS RE LIMITE BY RS(on) ms ms ms T = 25 C T J = 5 C GS =. Single Pulse S, Source-o-rain olage () S, rain-o-source olage () Fig 7. Typical Source-rain iode Forward olage 3. Fig 8. Maximum Safe Operaing rea 2.5 I, rain Curren (mps) Fig a. Swiching Time Tes Circui T, mbien Temperaure ( C) Fig 9. Maximum rain Curren s. mbien Temperaure Fig b. Swiching Time Waveforms Fig a. Gae Charge Tes Circui Fig b. Basic Gae Charge Waveform 72
5 IRF76 -I, rain-o-source Curren () GS TOP BOTTOM µs PULSE WITH 2µs PULSE WITH.. T J = 5 C.. - S, rain-o-source olage () - S, rain-o-source olage () Fig 2. Typical Oupu Characerisics, T J = 25 o C -I, rain-o-source Curren () GS TOP BOTTOM Fig 3. Typical Oupu Characerisics, T J = 5 o C -I, rain-o-source Curren () T J = 5 C S = -5 2µs PULSE WITH GS, Gae-o-Source olage () Fig 4. Typical Transfer Characerisics C, Capaciance (pf) C oss C iss C rss GS =, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd - S, rain-o-source olage () Fig 6. Typical Capaciance s. rain-o-source olage 73 R S(on), rain-o-source On Resisance (Normalized) I = -2.5 GS = T J, Juncion Temperaure ( C) Fig 5. Normalized On-Resisance s. Temperaure - GS, Gae-o-Source olage () I = -2.3 S = - FOR TEST CIRCUIT SEE FIGURE Q G, Toal Gae Charge (nc) Fig 7. Typical Gae Charge s. Gae-o-Source olage
6 IRF76 -I S, Reverse rain Curren () T J = 5 C GS = S, Source-o-rain olage () Fig 8. Typical Source-rain iode Forward olage -I, rain Curren () OPERTION IN THIS RE LIMITE BY RS(on) ms ms ms T = 25 C T J = 5 C Single Pulse.. - S, rain-o-source olage () Fig 9. Maximum Safe Operaing rea 2.5 -I, rain Curren (mps) Fig 2a. Swiching Time Tes Circui T, mbien Temperaure ( C) Fig 2. Maximum rain Curren s. mbien Temperaure Fig 2b. Swiching Time Waveforms Fig 22a. Gae Charge Tes Circui Fig 22b. Basic Gae Charge Waveform 74
7 N-P Channel IRF76 Thermal Response (Z hj ) = SINGLE PULSE (THERML RESPONSE) 2. P ea k T J = P M x Z h J + T......, Recangular Pulse uraion (sec) N oes:. uy fac or = / 2 Fig 23. Maximum Effecive Transien Thermal Impedance, Juncion-o-mbien P M 2 Refer o he ppendix Secion for he following: ppendix : Figure 24, Peak iode Recovery dv/d Tes Circui See page 329. ppendix B: Package Ouline Mechanical rawing See page 332. ppendix C: Par Marking Informaion See page 332. ppendix : Tape and Reel Informaion See page
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
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Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationIRFZ34N PD C. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.040Ω I D = 29A. Thermal Resistance
l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 95039 IRF733PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω
More informationIRFP450LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.40Ω I D = 14A
HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More informationIRLI620G PD HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.80Ω I D = 4.0A
HEXFET Power MOSFET PD - 9.235 IRLI620G Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive R DS(ON) Specified at V GS = 4V & 5V Fast Switching Ease
More informationG S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie ( mm) vaiabe in Tape and Ree Fast Switching S escription Fifth Generation HEXFETs from Internationa Rectifier utiize
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationIRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationV DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET
HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
More informationIRF6215PbF HEXFET Power MOSFET
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
More informationIRLMS1503. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationG S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs
More informationIRF7328PbF. HEXFET Power MOSFET V DSS R DS(on) max I D
lÿÿtrench Technology lÿÿultra Low On-Resistance lÿ Dual P-Channel MOSFET lÿavailable in Tape & Reel lÿ Lead-Free PD - 9596A IRF7328PbF HEXFET Power MOSFET V DSS R DS(on) max I D -30V 2mΩ@V GS = -V -8.0A
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOSFET P - 9576 IRF730PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching Lead-Free escription Fifth
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
More informationG S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRF6633 DirectFET Power MOSFET
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 2.2 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features dvanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS Compliant
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth
More informationIRL3102. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013Ω I D = 61A PRELIMINARY
l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
More informationIRLIZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 30A. Description. Thermal Resistance PD A TO-220 FULLPAK
l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF
www.addmek.com DESCRIPTI is a PWM power ED driver IC. The driving curren from few milliamps up o 1.5A. I allows high brighness power ED operaing a high efficiency from 4Vdc o 40Vdc. Up o 200KHz exernal
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationFETKY MOSFET & Schottky Diode
l Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator pplications l P-Channel HEXFET l Low V F Schottky Rectifier l SO-8 Footprint l Lead-Free Description The FETKY TM family
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
More informationAdvanced Power Electronics Corp.
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power
More informationAUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE dvanced Process Technology Optimized for utomotive Motor rive, C-C and other Heavy Load pplications Exceptionally Small Footprint and Low Profile High Power ensity Low Parasitic Parameters
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1.
AP236AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate rive Lower On-resistance Surface-Mount evice R S(ON) 35mΩ RoHS-compliant, Halogen-free G S I 5A BV SS 3V escription Advanced Power
More informationIRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View
l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
More informationIRF6612PbF IRF661TRPbF
Typical R S(on) (mω) RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) pplication Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (
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