Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Size: px

Start display at page:

Download "Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package"

Daisy Chapman
5 years ago
Views:

1 MTI145WX1GD Three phase full Bridge wih Trench MOSFETs in DCB-isolaed high-curren package S = 1 V 5 = 19 R DSon yp. = 1.7 mw Par number MTI145WX1GD L1+ L+ L3+ G1 G3 G5 Surface Moun Device S1 S3 S5 L1 L L3 G G4 G6 S S4 S6 L1- L- L3- Feaures / dvanages: MOSFETs in rench echnology: low R DSon opimized inriic reverse diode Package: high level of inegraion high curren capabiliy aux. erminals for MOSFET conrol erminals for soldering or welding connecio isolaed DCB ceramic base plae wih opimized hea rafer Space and weigh savings pplicaio: C drives in auomobiles elecric power seering sarer generaor in indusrial vehicles propulsion drives fork lif drives in baery supplied equipmen Package: ISOPLUS-DIL High level of inegraion RoHS complian High curren capabiliy ux. Terminals for MOSFET conrol Terminals for soldering or welding connecio Space and weigh savings Terms & Condiio of usage The daa conained in his produc daa shee is exclusively inended for echnically rained saff. The user will have o evaluae he suiabiliy of he produc for he inended applicaion and he compleeness of he produc daa wih respec o his applicaion. The specificaio of our compone may no be coidered as an assurance of componen characerisics. The informaion in he valid applicaion- and assembly noes mus be coidered. Should you require produc informaion in excess of he daa given in his produc daa shee or which concer he specific applicaion of your produc, please conac your local sales office. Due o echnical requireme our produc may conain dangerous subsances. For informaion on he ypes in quesion please conac your local sales office. Should you inend o use he produc in aviaion, in healh or life endangering or life suppor applicaio, please noify. For any such applicaion we urgenly recommend - o perform join risk and qualiy assessme; - he conclusion of qualiy agreeme; - o esablish join measures of an ongoing produc survey, and ha we may make delivery dependen on he realizaion of any such measures f 17 IXYS ll righs reserved 1-7

2 MTI145WX1GD MOSFETs Raings Symbol Definiio Condiio min. yp. max. Uni S drain source breakdown volage = 5 C o 15 C 1 V M gae source volage max. raien gae source volage 5 coninuous drain curren T C = 5 C 9 T C = 9 C 1) saic drain source on resisance on chip level a = 5 C = 1 ; = 1 V ±15 ± V V. mw mw (h) gae hreshold volage = 75 µ; = = 5 C V SS drain source leakage curren = S ; = V = 5 C 1 I GSS gae source leakage curren = ± V; = V 5 n gae resisance on chip level 1.9 W C iss C oss C rss Q g Q gs Q gd d(on) r d(off) f E rec(off) inpu capaciance oupu capaciance reverse rafer capaciance oal gae charge gae source charge gae drain (Miller) charge urn-on delay ime curren rise ime urn-off delay ime curren fall ime urn-on energy per pulse urn-off energy per pulse urn-off reverse recovery losses = V; = 5 V; f = 1 Mhz = 1 V; = 5 V; = 1 inducive load = 1 V; = 5 V = 1 ; = 7 W R hjc hermal resisance juncion o case.85 K/W R hjh hermal resisance juncion o heasink wih hea rafer pase (IXYS es seup) K/W 1) = ( + R Pin o Chip ) µ µ nf nf pf nc nc nc µj µj µj Source-Drain Diode I F5 forward curren T C = 5 C I F9 T C = 9 C V SD source drain volage I F = 1 ; = V = 5 C.9 V Q RM I RM rr reverse recovery charge max. reverse recovery curren reverse recovery ime V R = 5 V; I F = 1 = 7 W (di/d = 17 /µs) µc 17614f 17 IXYS ll righs reserved - 7

3 MTI145WX1GD Package ISOPLUS-DIL Raings Symbol Definiio Condiio min. yp. max. Uni I RMS RMS curren per pin in main curren pahs (L1+...L3+, L1-...L3-, L1...L3) may be addiionally limied by exernal connecio (PCB racks) pi for oupu L1, L, L3 75 T sg sorage emperaure C T op operaion emperaure C virual juncion emperaure C Weigh 13 g F C mouning force wih clip 5 5 N V ISOL isolaion volage = 1 second 1 V 5/6 Hz, RMS, I ISOL < 1 m = 1 minue 1 V R pin-chip resisance erminal o chip = ( + R pin o chip ).5 mw C P coupling capaciy beween shored pi and back side meallizaion 16 pf XXXXXXXXXXXX YYYYYY yywwc DCB backside ssembly Line Dae Code Type Number ssembly Code Par number M = MOSFET T = Trench I = Infineon Trench 145 = Curren Raing WX = 6-Pack wih separaed Phase Legs 1 = Reverse Volage [V] GD = ISOPLUS-DIL Ordering Par Name Marking on Produc Delivering Mode Base Qy Ordering Code Sandard MTI145WX1GD-SMD MTI145WX1GD Tube f 17 IXYS ll righs reserved 3-7

4 MTI145WX1GD Oulines ISOPLUS-DIL L1+ L+ L3+ G1 G3 G5 S1 S3 S5 L1 L L3 G G4 G6 S S4 S6 L1- L- L f 17 IXYS ll righs reserved 4-7

5 MTI145WX1GD SS = 1 m 3 = 5 V 1.1 S normalized 1. [V].9 1 = 5 C T J [ C] Fig.1 Drain source breakdown volage S vs. juncion emperaure [V] Fig. Typ. rafer characerisics 3 I D 1 V = G S V 15 V 1 V 7 V 6.5 V = 5 C 6 V 5.5 V 5 V 3 1 V = GS V 15 V 1 V 7 V 6.5 V 6 V 5.5 V 5 V [V] Fig. 3 Typ. oupu characerisics on die level [V] Fig. 4 Typ. oupu characerisics on die level.5. = 1 V = V norm..5 normalized 3 [mω] 1 norm. 1 T J 5.5 V 15 V V 6 V 6.5 V 7 V 1 V T J [ C] Fig.5 Drain source on-sae resisance vs. juncion emperaure, on die level Fig. 6 Drain source on-sae resisance versus, on die level 17614f 17 IXYS ll righs reserved 5-7

6 MTI145WX1GD 1 8 = 1 = 5 C = V = 4 V 5 = 175 C 6 15 [V] Q G [nc] Fig.7 Typical urn on gae charge T C [ C] Fig. 8 Drain curren vs. case emperaure T C (Chip capabiliy) [µj] = 5 V = /1 V = 7 Ω T d(on) VJ V 16 DS = 5 V V E GS = 1/ V off 1.8 = 7 Ω r T E [] [mj] VJ on d(off) [] E rec(off) f Fig. 9 Typ. urn-on energy and swiching imes versus drain curren, inducive swiching Fig. 1 Typ. urn-off energy and swiching imes versus drain-curren, inducive swiching [mj].4 = 5 V = /1 V = 1 d(on) []. 1.6 [mj].8 = 5 V = /1 V = 1 d(off) 16 1 [] 8 r E rec(off) x [Ω] [Ω] f Fig. 11 Typ. urn-on energy and swiching imes versus gae resisor, inducive swiching Fig. 1 Typ. urn-off energy and swiching imes versus gae resisor, inducive swiching 17614f 17 IXYS ll righs reserved 6-7

7 MTI145WX1GD I RM Ω I RM 7 Ω I F = 1 = 5 V 8 Ω 8 Ω rr di/d [/µs] 7 Ω 7 Ω rr Fig. 13 Typ. reverse recovery characerisics [] Q rr [nc].8 I F = 1 V R = 5 V 7 Ω 8 Ω 7 Ω di/d [/µs] Fig. 14 Typ. reverse recovery characerisics 3 I S 1 = -5 C 5 C 15 C 15 C 1..8 Z hjh.6 [K/W] V SD [V] Fig.15 Source curren I S vs. source drain volage V SD (body diode) on die level [s] Fig. 16 Typ. hermal impedance juncion o heasink Z hjh wih hea rafer pase (IXYS es seup) 17614f 17 IXYS ll righs reserved 7-7

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MTI2WX75GD Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 75 V 25 = 255 R DSon yp. = 1.1 mw Par number MTI2WX75GD G1 L1+ L2+ T1 T3 T5 G3 G5 L3+ Surface Moun Device S1