CoolMOS 1) Power MOSFET ISOPLUS - electrically isolated surface to heatsink Surface Mount Power Device

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Griffin Holt
5 years ago
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CoolMOS 1) Power MOSFET ISOPLUS - elecrically isolaed surface o heasink Surface Moun Power Device S = V 25 = R DS(on) max = 45 mw Preliminary daa G KS D T D K Isolaed surface o heasink D K 3x S G KS

1 CoolMOS 1) Power MOSFET ISOPLUS - elecrically isolaed surface o heasink Surface Moun Power Device S = V 25 = R DS(on) max = 45 mw Preliminary daa G KS D T D K Isolaed surface o heasink D K 3x S G KS nc S E72873 MOSFET T S = 25 C o 1 C V ±2 V 25 T C = 25 C T C = C E S E R single pulse repeiive = 11 ; T C = 25 C dv/d MOSFET dv/d ruggedness =...4 V V/ ( = 25 C, unless oherwise specified) R DSon = 44 ; = 1 V 45 mω (h) = 3 m; = V SS = S ; = V; = 25 C 1 µ µ I GSS = V ; = ± 2 V 1 n d(on) r d(off) f C iss C oss Q g Q gs Q gd Inducive swiching boos mode wih diode D = 3 V; = 3 = 1 V; = 33 Ω = V; = 1 V; f = 1 MHz = V; = 44 = 1 V; = 3.3 Ω R hjc R hjh wih heasink compound (IXYS es seup) bd pf pf 19 nc nc nc.4 bd K/W K/W Feaures Fas CoolMOS 1) power MOSFET 4 h generaion - high blocking capabiliy - lowes resisance - avalanche raed for unclamped inducive swiching (UIS) - low hermal resisance due o reduced chip hickness Package - isolaed surface o heasink - low coupling capaciy beween pi and heasink - PCB space saving - enlarged creepage owards heasink - applicaion friendly pinou - low inducive curren pah - high reliabiliy pplicaio Buck / boos chopper Opimized for boos configuraion PFC sage 1) CoolMOS is a rademark of Infineon Technologies G. 211 IXYS ll righs reserved 1-6

2 Source-Drain Diode of MOSFET T I S25 I S T C = 25 C T C = C ( = 25 C, unless oherwise specified) V SD I F = 44 ; = V.9 1. V rr Q RM I RM I F = 44 ; -di F /d = 1 /µs; V R = V µc Equivalen Circuis for Simulaion Conducion I V R Boos Diode (yp. a T J ) V = bd V; R = bd mw Diode D I F25 I F Componen T sg V ISOL I ISOL < 1 m; / Hz 2 V~ F C mouning force N C P coupling capaciy beween shored pi and backside meal 9 pf d S, d d S, d T C = 25 C; DC T C = C; DC ( = 25 C, unless oherwise specified) V RRM = 25 C V V F I F = 25 = 25 C I R V R = V RRM = 25 C I RM I F = 3 ; V R = 3 V = 1 C -di/d = 2 /µs rr I F = 1 ; V R = 3 V = 1 C -di/d = 1 /µs R hjc R hjh per diode wih heasink compound (IXYS es seup) pin - pin pin - backside meal C C mm mm CTI Weigh 8 g V 1 µ bd m 1 35 bd.7 K/W k/w Ordering Par Number Marking on Produc Delivering Mode 211 IXYS ll righs reserved 2-6 Base Qy Ordering Code Sandard MKE38RKDFELB-TRR MKE38RKDFELB Tape & Reel MKE38RKDFELB MKE38RKDFELB Bliser

3 (6x) 1,5 2) 5,5,1,3,1 2,1 1) 25,2 (8 : 1),5,1 18,1 seaing plane 9,1 (3x) 2,5 2) 4,5,55,1 23,2 32,7,5 2,2 4,85,2 2,75,1 5,5,1 13,5,1 16,25,1 19,1 ~ ~ ~ 3),5 Noes: 1) porusion may add.2 mm max. on each side 2) addiional max..5 mm per side by punching misalignemen or overlap of dam bar or bending compression 3) DCB area 1 o µm convex; posiion of DCB area in relaion o plasic rim: ±25 µm (measured 2 mm from Cu rim) 4) erminal plaing:.2-1 µm Ni µm Sn (galv.) cuing edges may be parially free of plaing Backside DCB UL Logo Par number Dae code Daa Marix Code Pin 1 idenifier XXXXXXXXXX yyww The Daa Marix Code conai he following informaion in 36 digis: Digis 1 hrough 2: par number 21 o 25: dae code (YYWW) 26 o 31: assembly lo code 32: reserved for special informaion 33 o 36: may be used for subsequen module numbering wihin he assembly lo 211 IXYS ll righs reserved 3-6

1.1 SS =.25 m 32 2 2 S 1. [] 1.9.8 - - -2 2 1 1 1 T J [ C] 1 2 3 4 5 6 7 8 9 1 Fig.1 Drain source breakdown volage versus emperaure Fig. 2 Typ. rafer characerisics [] = 2/1/8/7 V 1 T J = 25 C 6 V 5.

4 1.1 SS =.25 m S 1. [] T J [ C] Fig.1 Drain source breakdown volage versus emperaure Fig. 2 Typ. rafer characerisics [] = 2/1/8/7 V 1 T J = 25 C 6 V 5.5 V 5 V 4.5 V Fig. 3 Typical oupu characerisics [] T J = 1 C = 2/1/8/7 V 6 V 5 V 4.5V Fig. 4 Typical oupu characerisics 1 = 1 V = = 4.5 V 5 V 5.5 V R DSon [mω] 2 98% yp. R DSon normalized V 7 V 8 V 1 V 2 V [ C] Fig.5 Drain source on-sae resisance R DS(on) vs. juncion emperaure [] Fig. 6 Drain source on-sae resisance, R DS(on) versus 211 IXYS ll righs reserved 4-6

1 8 6 4 2 = 44 pulsed = V 1 1 Q G [nc] Fig. 7 Typ. urn-on gae charge V C [pf] 1 9 7 3 2 1 2 1 1 1 Fig. 8 Typ. capaciies, MOSFET only [] 3. 2.5 2. 1.5 1. = 33 Ω = 3 V = 1 V d(on) r 1 [] [] 1.5.9.6 = 33 Ω = 3 V = 1 V d (off) 1 9 7 3 [].

5 = 44 pulsed = V 1 1 Q G [nc] Fig. 7 Typ. urn-on gae charge V C [pf] Fig. 8 Typ. capaciies, MOSFET only [] = 33 Ω = 3 V = 1 V d(on) r 1 [] [] = 33 Ω = 3 V = 1 V d (off) [] [].3 1 f [] Fig. 9 Typ. urn-on energy and swiching imes vs. collecor curren, indukive swiching Fig. 1 Typ. urn-off energy and swiching imes vs. collecor-curren, indukive swiching, [] 2. = 3 = 3 V V 1.6 GS = 1 V.8.4 d(on) [Ω] 1 [] r Fig. 11 Typ. urn-on energy and swiching imes vs. gae resisor, indukive swiching [].4 = 3 = 3 V = 1 V d(off) f. 3 7 [Ω] 1 1 Fig. 12 Typ. urn-off energy and swiching imes vs. gae resisor, indukive swiching [] 211 IXYS ll righs reserved 5-6

6 I F [] C [] = 68 Ω 68 Ω 56 Ω 56 Ω 47 Ω 47Ω I F = 3 V R = 3 V rr 33 Ω rr [] V F 1 1 di F /d [/µs] Fig. 13 Typ. forward characerisics of diode D Fig. 14 Typ. reverse recovery characerisics of diode D = 33 Ω V R = 3 V 8 6 Q rr 4 Q rr [] [µc] I F [] Fig. 15 Typ. reverse recovery characerisics of diode D 211 IXYS ll righs reserved 6-6

7 Disclaimer Noice - Informaion furnished is believed o be accurae and reliable. However, users should independenly evaluae he suiabiliy of and es each produc seleced for heir own applicaio. Lielfuse producs are no designed for, and may no be used in, all applicaio.read complee Disclaimer Noice a

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package MTI145WX1GD Three phase full Bridge wih Trench MOSFETs in DCB-isolaed high-curren package S = 1 V 5 = 19 R DSon yp. = 1.7 mw Par number MTI145WX1GD L1+ L+ L3+ G1 G3 G5 Surface Moun Device S1 S3 S5 L1 L