DATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03

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1 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes daa of April 1996 File under Discree Semiconducors, SC Sep 03

2 FEATURES Hermeically sealed leaded glass SOD27 (DO-35) package High swiching speed: max. 4 ns Coninuous reverse volage: max. 75 V Repeiive peak reverse volage: max. 100 V Repeiive peak forward curren: max. 225 ma. APPLICATIONS High-speed swiching. DESCRIPTION The are high-speed swiching diodes fabricaed in planar ecshnology, and encapsulaed in hermeically sealed leaded glass SOD27 (DO-35) packages. s handbook, halfpage k The diodes are ype branded. MAM246 Fig.1 Simplified ouline (SOD27; DO-35) and symbol. a LIMITING VALUES In accordance wih he Absolue Maximum Raing Sysem (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM repeiive peak reverse volage 100 V V R coninuous reverse volage 75 V coninuous forward curren see Fig.2; noe 1 75 ma RM repeiive peak forward curren 225 ma SM non-repeiive peak forward curren square wave; T j = 25 C prior o surge; see Fig.4 Noe 1. Device mouned on an FR4 prined circui-board; lead lengh 10 mm. = 1 µs 4 A = 1 ms 1 A = 1 s 0.5 A P o oal power dissipaion T amb = 25 C; noe mw T sg sorage emperaure C T j juncion emperaure 175 C 1996 Sep 03 2

3 ELECTRICAL CHARACTERISTICS T j = 25 C; unless oherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V F forward volage = 10 ma; see Fig mv I R reverse curren see Fig.5 C d diode capaciance f = 1 MHz; V R = 0; see Fig.6 V R = 20 V 25 na V R = 75 V 5 µa V R = 20 V; T j = 150 C 50 µa 1N914 4 pf 1N916 2 pf rr reverse recovery ime when swiched from = 10 ma o 1N914 I R = 10 ma; R L = 100 Ω; 8 ns measured a I R = 1 ma; see Fig.7 reverse recovery ime when swiched from = 10 ma o I R = 60 ma; R L = 100 Ω; measured a I R = 1 ma; see Fig.7 V fr forward recovery volage when swiched from = 50 ma; r = 20 ns; see Fig.8 4 ns 2.5 V THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R h j-p hermal resisance from juncion o ie-poin lead lengh 10 mm 240 K/W R h j-a hermal resisance from juncion o ambien lead lengh 10 mm; noe K/W Noe 1. Device mouned on a prined circui-board wihou meallizaion pad Sep 03 3

4 GRAPHICAL DATA 100 MGD handbook, halfpage MBG464 (ma) (ma) (1) (2) (3) T amb ( o C) V 2 F (V) Device mouned on an FR4 prined-circui board; lead lengh 10 mm. Fig.2 Maximum permissible coninuous forward curren as a funcion of ambien emperaure. (1) T j = 175 C; ypical values. (2) T j = 25 C; ypical values. (3) T j = 25 C; maximum values. Fig.3 Forward curren as a funcion of forward volage handbook, full pagewidh MBG704 SM (A) p (µs) 10 4 Based on square wave currens. T j = 25 C prior o surge. Fig.4 Maximum permissible non-repeiive peak forward curren as a funcion of pulse duraion Sep 03 4

5 10 3 handbook, halfpage I R (µa) 10 2 MGD handbook, halfpage C d (pf) 1.0 MGD (1) (2) (3) T j ( o C) V R (V) (1) V R = 75 V; maximum values. (2) V R = 75 V; ypical values. (3) V R = 20 V; ypical values. f = 1 MHz; T j = 25 C. Fig.5 Reverse curren as a funcion of juncion emperaure. Fig.6 Diode capaciance as a funcion of reverse volage; ypical values Sep 03 5

6 handbook, full pagewidh R = 50 Ω S D.U.T. SAMPLING OSCILLOSCOPE r 10% p rr V = V R I F x R S R = 50 Ω i MGA881 V R 90% (1) inpu signal oupu signal (1) I R = 1 ma. Fig.7 Reverse recovery volage es circui and waveforms. I 1 k Ω 450 Ω I 90% V R = 50 S Ω D.U.T. OSCILLOSCOPE R i = 50 Ω Vfr 10% MGA882 r p inpu signal oupu signal Fig.8 Forward recovery volage es circui and waveforms Sep 03 6

7 PACKAGE OUTLINE handbook, full pagewidh 0.56 max 1.85 max 25.4 min 4.25 max 25.4 min MLA428-1 Dimensions in mm. Fig.9 SOD27 (DO-35). DEFINITIONS Daa Shee Saus Objecive specificaion Preliminary specificaion Limiing values This daa shee conains arge or goal specificaions for produc developmen. This daa shee conains preliminary daa; supplemenary daa may be published laer. This daa shee conains final produc specificaions. Limiing values given are in accordance wih he Absolue Maximum Raing Sysem (IEC 134). Sress above one or more of he limiing values may cause permanen damage o he device. These are sress raings only and operaion of he device a hese or a any oher condiions above hose given in he Characerisics secions of he specificaion is no implied. Exposure o limiing values for exended periods may affec device reliabiliy. Applicaion informaion Where applicaion informaion is given, i is advisory and does no form par of he specificaion. LIFE SUPPORT APPLICATIONS These producs are no designed for use in life suppor appliances, devices, or sysems where malfuncion of hese producs can reasonably be expeced o resul in personal injury. Philips cusomers using or selling hese producs for use in such applicaions do so a heir own risk and agree o fully indemnify Philips for any damages resuling from such improper use or sale Sep 03 7

DATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996

DATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D7 Supersedes data of April 996 996 Sep 7 FEATURES Small plastic SMD package Switching speed:. 5 ns General application Continuous reverse voltage:.