Diode RapidSwitchingEmitterControlledDiode. IDP08E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl

Save this PDF as:
Size: px
Start display at page:

Download "Diode RapidSwitchingEmitterControlledDiode. IDP08E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl"

Transcription

1 Diode RapidSwichingEmierConrolledDiode EmierConrolledDiodeRapid1Series Daashee IndusrialPowerConrol

2 EmierConrolledDiodeRapid1Series RapidSwichingEmierConrolledDiode Feaures: 65VEmierConrolledechnology Temperauresablebehaviourofkeyparameers Lowforwardvolage(VF) Ulrafasrecovery Lowreverserecoverycharge(Qrr) Lowreverserecoverycurren(Irrm) Sofnessfacor>1 175 Cjuncionoperaingemperaure Pbfreeleadplaing;RoHScomplian A C Applicaions: C AC/DCconverers BoosdiodeinPFCsages Freewheelingdiodesininverersandmoordrives Generalpurposeinverers Swichmodepowersupplies C A KeyPerformanceandPackageParameers Type Vrrm If Vf,Tvj=25 C Tvjmax Marking Package 65V 8A 1.35V 175 C E8ED1 PGTO Rev.2.2,

3 EmierConrolledDiodeRapid1Series TableofConens Descripion Table of Conens Maximum Raings Thermal Resisance Elecrical Characerisics Elecrical Characerisics Diagrams Package Drawing Tesing Condiions Revision Hisory Disclaimer Rev.2.2,

4 EmierConrolledDiodeRapid1Series MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed8%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Repeiive peak reverse volage VRRM 65 V Diodeforwardcurren,limiedbyTvjmax TC=25 C TC=1 C IF Diodepulsedcurren,plimiedbyTvjmax IFpuls 24. A Diode surge non repeiive forward curren TC=25 C,p=1.ms,sinehalfwave PowerdissipaionTC=25 C Po 56. W Operaing juncion emperaure Tvj C Sorage emperaure Tsg C Soldering emperaure, wave soldering 1.6 mm (.63 in.) from case for 1s 26 Mouning orque, M3 screw Maximum of mouning processes: 3 IFSM 64. A A C M.6 Nm ThermalResisance Parameer Symbol Condiions Max.Value Uni Characerisic Diode hermal resisance, 1) juncion case Thermal resisance juncion ambien Rh(jc) 2.69 K/W Rh(ja) 62 K/W ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Diode forward volage Reverse leakage curren VF IR IF=8.A Tvj=25 C Tvj=125 C Tvj=175 C VR=65V Tvj=25 C Tvj=175 C V µa ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inernal emier inducance measured 5mm (.197 in.) from case LE 7. nh 1) Please be aware ha in non sandard load condiions, due o high Rh(jc), Tvj close o Tvjmax can be reached. 4 Rev.2.2,

5 EmierConrolledDiodeRapid1Series SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=25 C Diode reverse recovery ime rr Tvj=25 C, 51 ns Diode reverse recovery charge VR=4V, Qrr.2 µc IF=8.A, Diode peak reverse recovery curren Irrm dif/d=1a/µs 7.9 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 42 A/µs Diode reverse recovery ime rr Tvj=25 C, 8 ns Diode reverse recovery charge VR=4V, Qrr.17 µc IF=8.A, Diode peak reverse recovery curren Irrm dif/d=2a/µs 2.8 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 31 A/µs SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=175 C/125 C Diode reverse recovery ime rr Tvj=175 C, 81 ns Diode reverse recovery charge VR=4V, Qrr.49 µc IF=8.A, Diode peak reverse recovery curren Irrm dif/d=1a/µs 1.5 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 3 A/µs Diode reverse recovery ime rr Tvj=125 C, 11 ns Diode reverse recovery charge VR=4V, Qrr.32 µc IF=8.A, Diode peak reverse recovery curren Irrm dif/d=2a/µs 4.7 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 21 A/µs 5 Rev.2.2,

6 EmierConrolledDiodeRapid1Series 6 Po,POWERDISSIPATION[W] IF,FORWARDCURRENT[A] TC,CASETEMPERATURE[ C] Figure 1. Powerdissipaionasafuncionofcase emperaure (Tvj 175 C) TC,CASETEMPERATURE[ C] Figure 2. Diodeforwardcurrenasafuncionofcase emperaure (Tvj 175 C) Zh(jc),TRANSIENTTHERMALRESISTANCE[K/W] D= single pulse i: ri[k/w]: E3 τi[s]: 1.3E5 1.3E4 6.5E4 4.7E E6 1E5 1E p,pulsewidth[s] Figure 3. Dioderansienhermalimpedanceasa funcionofpulsewidh (D=p/T) rr,reverserecoverytime[ns] Tj=25 C, IF = 8A Tj=125 C, IF = 8A Tj=175 C, IF = 8A dif/d,diodecurrentslope[a/µs] Figure 4. Typicalreverserecoveryimeasafuncionof diodecurrenslope (VR=4V) 6 Rev.2.2,

7 Emier Conrolled Diode Rapid 1 Series.6 2 Tj=25 C, IF = 8A Tj=125 C, IF = 8A Tj=175 C, IF = 8A 18 Irrm, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc] Tj=25 C, IF = 8A Tj=125 C, IF = 8A Tj=175 C, IF = 8A dif/d, DIODE CURRENT SLOPE [A/µs] dif/d, DIODE CURRENT SLOPE [A/µs] Figure 5. Typical reverse recovery charge as a funcion Figure 6. Typical peak reverse recovery curren as a of diode curren slope funcion of diode curren slope (VR=4V) (VR=4V) 16 Tj=25 C, IF = 8A Tj=125 C, IF = 8A Tj=175 C, IF = 8A Tj=25 C Tj=175 C 14 4 IF, FORWARD CURRENT [A] dirr/d, diode peak rae of fall of Irr [A/µs] dif/d, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] Figure 7. Typical diode peak rae of fall of reverse recovery curren as a funcion of diode curren slope (VR=4V) Figure 8. Typical diode forward curren as a funcion of forward volage 7 Rev. 2.2,

8 Emier Conrolled Diode Rapid 1 Series 2. IF=2A IF=4A IF=8A IF=12A IF=16A VF, FORWARD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] Figure 9. Typical diode forward volage as a funcion of juncion emperaure 8 Rev. 2.2,

9 Emier Conrolled Diode Rapid 1 Series PGTO Rev. 2.2,

10 Emier Conrolled Diode Rapid 1 Series vge() 9% VGE a a 1% VGE b b ic() 9% IC 9% IC 1% IC 1% IC vce() d(off) f d(on) r vge() 9% VGE 1% VGE ic() CC 2% IC vce() 2 E = off V CE 4 x IC x d E 1 1 on = V CE x IC x d 2% VCE Rev. 2.2,

11 Emier Conrolled Diode Rapid 1 Series Revision Hisory Revision: , Rev. 2.2 Previous Revision Revision Dae Subjecs (major changes since las revision) Preliminary daa shee Final daa shee New Marking Paern We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: Published by Infineon Technologies AG Munich, Germany München, Germany 214 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office ( Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 11 Rev. 2.2,

Diode RapidSwitchingEmitterControlledDiode. IDP30E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDP30E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode EmierConrolledDiodeRapid1Series Daashee IndusrialPowerConrol EmierConrolledDiodeRapid1Series RapidSwichingEmierConrolledDiode Feaures: 650VEmierConrolledechnology

More information

Diode RapidSwitchingEmitterControlledDiode. IDW40E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDW40E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode IDW40E65D2 EmierConrolledDiode Daashee IndusrialPowerConrol EmierConrolledDiode RapidSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions

More information

Diode FastSwitchingEmitterControlledDiode. IDW50E60 EmitterControlledDiodeseries. Datasheet. IndustrialPowerControl

Diode FastSwitchingEmitterControlledDiode. IDW50E60 EmitterControlledDiodeseries. Datasheet. IndustrialPowerControl Diode FasSwichingEmierConrolledDiode IDW5E6 EmierConrolledDiodeseries Daashee IndusrialPowerConrol IDW5E6 EmierConrolledDiodeseries FasSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions

More information

Diode RapidSwitchingEmitterControlledDiode. IDP20E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDP20E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode IDP20E65D2 EmierConrolledDiode Daashee IndusrialPowerConrol EmierConrolledDiode RapidSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions

More information

Diode RapidSwitchingEmitterControlledDiode. IDV30E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDV30E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode EmierConrolledDiode Daashee IndusrialPowerConrol EmierConrolledDiode RapidSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions 6VEmierConrolledechnology

More information

Diode RapidSwitchingEmitterControlledDiode. IDW15E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDW15E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode IDW15E65D2 EmierConrolledDiode Daashee IndusrialPowerConrol EmierConrolledDiode RapidSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions

More information

Diode RapidSwitchingEmitterControlledDiode. IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode IDP20C65D2 EmierConrolledDiodeRapid2CommonCahodeSeries Daashee IndusrialPowerConrol EmierConrolledDiodeRapid2CommonCahodeSeries RapidSwichingEmierConrolledDiode Feaures:

More information

IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode

IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKP4N65F5,IKW4N65F5 65VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl

More information

<Diode Modules> RM200CY-24S HIGH POWER SWITCHING USE INSULATED TYPE

<Diode Modules> RM200CY-24S HIGH POWER SWITCHING USE INSULATED TYPE dual swich (Cahode Common) Forward curren...... 2 0 0 A Repeiive peak reverse volage V RRM... 1 2 0 0 V Maximum juncion emperaure T jmax... 1 5 0 C Fla base Type Copper base plae RoHS Direcive

More information

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MTI2WX75GD Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 75 V 25 = 255 R DSon yp. = 1.1 mw Par number MTI2WX75GD G1 L1+ L2+ T1 T3 T5 G3 G5 L3+ Surface Moun Device S1

More information

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package MTI145WX1GD Three phase full Bridge wih Trench MOSFETs in DCB-isolaed high-curren package S = 1 V 5 = 19 R DSon yp. = 1.7 mw Par number MTI145WX1GD L1+ L+ L3+ G1 G3 G5 Surface Moun Device S1 S3 S5 L1 L

More information

HRF32. Silicon Schottky Barrier Diode for Rectifying. ADE D(Z) Rev 4 Jul Features. Ordering Information. Outline

HRF32. Silicon Schottky Barrier Diode for Rectifying. ADE D(Z) Rev 4 Jul Features. Ordering Information. Outline Silicon Schoky Barrier Diode for Recifying ADE-28-164D(Z) Rev 4 Jul. 1997 Feaures Good for high-frequency recify. LRP srucure ensures higher reliabiliy. Ordering Informaion Type No. Laser Mark Package

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM rr (yp) VF (max) FEATURES AND BENEFITS 3 A 1200 V 65 ns 1.7 V SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING,

More information

BAV70WT1G SBAV70WT1G Dual Switching Diode Common Cathode

BAV70WT1G SBAV70WT1G Dual Switching Diode Common Cathode BA70WT1G, SBA70WT1G Dual Swiching Diode Common Cahode Feaures AECQ101 Qualified and PPAP Capable S Prefix for Auomoive and Oher Applicaions Requiring Unique Sie and Conrol Change Requiremens These Devices

More information

PROFET BTS 736 L2. Smart High-Side Power Switch Two Channels: 2 x 40mΩ Status Feedback

PROFET BTS 736 L2. Smart High-Side Power Switch Two Channels: 2 x 40mΩ Status Feedback PROFET BTS 736 2 Smar igh-side Power Swich Two Channels: 2 x 40mΩ Saus Feedback Produc Summary Package Operaing olage bb(on) 4.75...41 Acive channels one wo parallel On-sae Resisance R ON 40mΩ 20mΩ Nominal

More information

DATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03

DATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes daa of April 1996 File under Discree Semiconducors, SC01 1996 Sep 03 FEATURES Hermeically sealed leaded glass SOD27 (DO-35) package High swiching speed:

More information

Step Down Voltage Regulator with Reset TLE 6365

Step Down Voltage Regulator with Reset TLE 6365 Sep Down Volage Regulaor wih Rese TLE 6365 Feaures Sep down converer Supply Over- and Under-Volage-Lockou Low Oupu volage olerance Oupu Overvolage Lockou Oupu Under-Volage-Rese wih delay Overemperaure

More information

<IGBT Modules> CM900DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM900DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE dual swich (Half-Bridge) Collecor curren I C...... 9 A Collecor-emier volage CES... 1 2 Maximum juncion emperaure T j m a x... 1 7 5 C Fla base Type Copper base plae (non-plaing) RoHS Direcive complian

More information

< IGBT MODULES > CM100DY-34A HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

< IGBT MODULES > CM100DY-34A HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION CMDY-34A Dual (Half-Bridge) Collecor curren I C...... A Collecor-emier volage CES... 7 Maximum juncion emperaure T jmax... 5 C Fla base Type Copper base plae RoHS Direcive complian UL Recognized under

More information

<IGBT Modules> CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE dual swich (Half-Bridge) Collecor curren I C...... 4 1 A * Collecor-emier volage CES... 1 2 Maximum juncion emperaure T jmax... 1 7 5 C Fla base Type Copper base plae RoHS Direcive complian UL Recognized

More information

APPLICATION. CM150DUS-12F - 4 th generation Fast switching IGBT module - MITSUBISHI IGBT MODULES CM150DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE

APPLICATION. CM150DUS-12F - 4 th generation Fast switching IGBT module - MITSUBISHI IGBT MODULES CM150DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE CM5DUS-2F CM5DUS-2F - 4 h generaion Fas swiching IGBT module - Collecor curren I C...... 5A Collecor-emier volage CES... 6 Maximum juncion emperaure T jmax... 5 C Fla base Type Copper base plae RoHS Direcive

More information

<IGBT Modules> CM75DY-34T HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM75DY-34T HIGH POWER SWITCHING USE INSULATED TYPE dual swich (half-bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OPTION (Below opions are available.) PC-TIM (Phase Change Thermal Inerface Maerial) pre-apply OUTLINE DRAWING

More information

Not Recommend. for New Design < IGBT MODULES > CM1400DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

Not Recommend. for New Design < IGBT MODULES > CM1400DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION dual swich (Half-Bridge) Collecor curren I C...... 1 4 A Collecor-emier volage CES... 1 2 Maximum juncion emperaure T jmax... 1 5 C Fla base Type Copper base plae (non-plaing) RoHS Direcive complian Recognized

More information

- MPD series using 5 h Generaion IGBT and FWDi - I C.... 4 A CES....... 2 Fla base Type Copper (non-plaing) base plae RoHS Direcive complian Dual swich (Half-Bridge) UL Recognized under UL557, File E323585

More information

IGBT Highspeed5IGBTinTRENCHSTOP TM technologycopackedwithrapid1 fastandsoftantiparalleldiode

IGBT Highspeed5IGBTinTRENCHSTOP TM technologycopackedwithrapid1 fastandsoftantiparalleldiode IGBT HighspeedIGBTinTRENCHSTOP TM technologycopackedwithrapid fastandsoftantiparalleldiode 6VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl Highspeedswitchingseriesfifthgeneration

More information

IR Receiver Module for Light Barrier Systems

IR Receiver Module for Light Barrier Systems IR Receiver Module for Ligh Barrier Sysems DESIGN SUPPORT TOOLS 19026 click logo o ge sared FEATURES Up o 2 m for presence sensing Uses modulaed burss a 38 khz 940 nm peak wavelengh PIN diode and sensor

More information

IGBT LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode

IGBT LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IGBT LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKW3N65EL5 6VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl IKW3N65EL5

More information

Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense

Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense POFET Smar High-Side Power Swich Two Channels: 2 x 3mΩ Curren Sense Produc Summary Package Operaing olage (on) 5...34 Acive channels one wo parallel On-sae esisance ON 3mΩ 15mΩ Nominal load curren (NOM)

More information

< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Dual (Half-Bridge) Collecor curren I C...... 4A * Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax... 75 C Fla base Type Copper base plae RoHS Direcive compliance UL Recognized under UL557,

More information

MX6895BETR. -550V Full Bridge Gate Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications. Ordering Information

MX6895BETR. -550V Full Bridge Gate Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications. Ordering Information -550V Full Bridge Gae Driver INTEGRATED CIRCUITS DIVISION Feaures Full Bridge Gae Driver Inernal High Volage Level Shif Funcion Negaive 550V Lamp Supply Volage 3V o 12V CMOS Logic Compaible 8V o 12V Inpu

More information

InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl

InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHWNR Datasheet IndustrialPowerControl IHWNR Reverse conducting IGBT with monolithic body diode Features: C Powerful monolithic body

More information

IR Receiver Module for Light Barrier Systems

IR Receiver Module for Light Barrier Systems IR Receiver Module for Ligh Barrier Sysems TSSP4..SSXB Vishay Semiconducors DESIGN SUPPORT TOOLS Models Available 3 MECHANICAL DATA Pinning: = OUT, = GND, 3 = V S 7 click logo o ge sared DESCRIPTION The

More information

Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION

Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dual swich (Half-Bridge) Collecor curren I C...... 14A Collecor-emier volage CES... 12 Maximum juncion emperaure T jmax... 175 C Fla base Type Copper base plae (non-plaing) RoHS Direcive complian UL Recognized

More information

Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION

Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION CMDUC-34SA Dual swich (Half-Bridge) Collecor curren I C...... A Collecor-emier volage CES... 17 Maximum juncion emperaure T jmax... 175 C Fla base Type Copper base plae (non-plaing) RoHS Direcive compliance

More information

< IGBT MODULES > CM600DU-12NFH HIGH POWER HIGH FREQUENTLY SWITCHING USE INSULATED TYPE

< IGBT MODULES > CM600DU-12NFH HIGH POWER HIGH FREQUENTLY SWITCHING USE INSULATED TYPE Dual (Half-Bridge) Collecor curren I C...... 6A Collecor-emier volage CES... 6 Maximum juncion emperaure T jmax... 5 C Fla base Type Copper base plae RoHS Direcive complian UL Recognized under UL557, File

More information

<IGBT Modules> CM400DY-13T HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM400DY-13T HIGH POWER SWITCHING USE INSULATED TYPE dual swich (half-bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OPTION (Below opions are available.) PC-TIM (Phase Change Thermal Inerface Maerial) pre-apply VCEsa selecion for

More information

IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev

IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy

More information

<IGBT Modules> CM450C1Y-24T HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM450C1Y-24T HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION AC power swich dual swich (Collecor-common) OPTION (Below opions are available.) PC-TIM (Phase Change Thermal Inerface Maerial) pre-apply CEsa selecion for parallel connecion OUTLINE DRAWING

More information

IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode

IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode 5VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl Highspeedswitchingseriesfifthgeneration

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for New TSOP48.. 2 3 MECHANICAL DATA Pinning = OUT, 2 =, 3 = 6672 FEATURES Low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Improved shielding

More information

IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev

IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev Fast Switching Emitter Controlled Diode Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy paralleling

More information

<IGBT Modules> CM450DXL-34SA HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM450DXL-34SA HIGH POWER SWITCHING USE INSULATED TYPE dual swich (Half-Bridge) Collecor curren I C...... 4 5 A Collecor-emier volage CES... 1 7 Maximum juncion emperaure T jmax... 1 7 5 C Fla base Type Copper base plae (non-plaing) Tin plaing pin erminals

More information

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications IR Sensor Module for Reflecive Sensor, Ligh Barrier, and Fas Proximiy Applicaions 2 3 DESIGN SUPPORT TOOLS 6672 click logo o ge sared FEATURES Up o 2 m for presence and proximiy sensing Uses modulaed burss

More information

<IGBT Modules> CM500C2Y-24S HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM500C2Y-24S HIGH POWER SWITCHING USE INSULATED TYPE dual pack (Emier common) Collecor curren IC...... 5 0 0 A Collecor-emier volage CES... 1 2 0 0 Maximum juncion emperaure T vjmax... 1 7 5 C Fla base Type Copper base plae Tin plaing ab erminals RoHS Direcive

More information

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications IR Sensor Module for Reflecive Sensor, Ligh Barrier, and Fas Proximiy Applicaions 2 3 DESIGN SUPPORT TOOLS Models Available MECHANICAL DATA Pinning: = OUT, 2 = GND, 3 = V S click logo o ge sared 6672 APPLICATIONS

More information

< IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

< IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Dual swich (Half-Bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren I C...... 45A Collecor-emier volage CES... 2 Maximum juncion

More information

RoHS Directive compliant Recognized under UL1557, File E APPLICATION. dual switch (Half-Bridge) OUTLINE DRAWING & INTERNAL CONNECTION

RoHS Directive compliant Recognized under UL1557, File E APPLICATION. dual switch (Half-Bridge) OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren I C...... 6 A Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax... 7 C Fla base Type Copper base plae (non-plaing) Tin plaing pin erminals dual swich (Half-Bridge) RoHS Direcive

More information

IR Receiver Module for Light Barrier Systems

IR Receiver Module for Light Barrier Systems New Produc IR Receiver Module for Ligh Barrier Sysems TSSP5838 1926 FEATURES Low supply curren Phoo deecor and preamplifier in one package Inernal filer for 38 khz IR signals Shielding agains EMI Supply

More information

MBM200H45E2-H Silicon N-channel IGBT 4500V E2 version

MBM200H45E2-H Silicon N-channel IGBT 4500V E2 version IGBT MODULE MBM2H45E2-H Silicon N-channel IGBT 45V E2 version Spec.No.IGBT-SP-2 R3 P FEATURES Low swiching loss IGBT module. Low noise due o ulra sof fas recovery diode. Isolaed hea sink (erminal o base).

More information

IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode

IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryantiparalleldiode IKWN6H3 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration

More information

ORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF

ORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF www.addmek.com DESCRIPTI is a PWM power ED driver IC. The driving curren from few milliamps up o 1.5A. I allows high brighness power ED operaing a high efficiency from 4Vdc o 40Vdc. Up o 200KHz exernal

More information

RoHS Directive compliant UL Recognized under UL1557, File E APPLICATION

RoHS Directive compliant UL Recognized under UL1557, File E APPLICATION CM5DX-24A CM5DX-24A - 5 h Generaion NX series - I C.... 5 A CES....... 2 Fla base Type Copper base plae (non-plaing) Dual (Half-Bridge) RoHS Direcive complian UL Recognized under UL557, File E323585 APPLICATION

More information

Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION

Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren I C...... 18A Collecor-emier volage CES... 17 Maximum juncion emperaure T jmax... 175 C Fla base Type Aluminum base plae RoHS Direcive compliance Dual swich (Half-Bridge) Recognized under

More information

IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode

IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode IKQ1N6TA 6Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems 2 3 MECHANICAL DATA Pinning: = OUT, 2 =, 3 = V S 6672 FEATURES Very low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Improved shielding agains EMI Supply volage:

More information

IXBN42N170A V CES = 1700V. = 21A V CE(sat) 6.0V t fi. = 20ns. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor

IXBN42N170A V CES = 1700V. = 21A V CE(sat) 6.0V t fi. = 20ns. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Informaion High Volage, High Gain BIMOSFET TM Monolihic Bipolar MOS Transisor IXBNN7A S = 7V 9 = A (sa).v fi = ns E SOT-7B, minibloc E33 Symbol Tes Condiions Maximum Raings S = C

More information

AK8779B Hall Effect IC for Pulse Encoders

AK8779B Hall Effect IC for Pulse Encoders AK8779B Hall Effec IC for Pulse Encoders 1. General Descripion The AK8779B is a Hall effec lach which deecs boh verical and horizonal (perpendicular and parallel o he marked side of he package) magneic

More information

AK8777B. Overview. Features

AK8777B. Overview. Features AK8777B Hall Effec IC for Pulse Encoders Overview The AK8777B is a Hall effec lach which deecs boh verical and horizonal (perpendicular and parallel o he marking side of he package) magneic field a he

More information

AK8779A Hall Effect IC for Pulse Encoders

AK8779A Hall Effect IC for Pulse Encoders AK8779A Hall Effec IC for Pulse Encoders 1. General Descripion The AK8779A is a Hall effec lach which deecs boh verical magneic field and horizonal magneic field (perpendicular and parallel o he marked

More information

RoHS Directive compliant UL Recognized under UL1557, File E APPLICATION

RoHS Directive compliant UL Recognized under UL1557, File E APPLICATION - 5 h Generaion NX series - Collecor curren I C...... 3A Collecor-emier volage CES... 6 Maximum juncion emperaure T jmax... 5 C Fla base Type Copper base plae (non-plaing) Dual (Half-Bridge) RoHS Direcive

More information

Special Features. Mechanical Data. Transmitte r with TSHFxxxx 1 OUT

Special Features. Mechanical Data. Transmitte r with TSHFxxxx 1 OUT IR Receiver for High Daa Rae PCM a 455 khz Descripion The TSOP7000 is a miniaurized receiver for infrared remoe conrol and IR daa ransmission. PIN diode and preamplifier are assembled on lead frame, he

More information

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. H037N06L Feaures Low On-Resisance Fas Swiching 100% Avalanche Tesed Repeiive Avalanche Allowed up o Tjmax Lead-Free, RoHS omplian Descripion H037N06L designed by he rench processing echniques o achieve

More information

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W D44VH (NPN), D45VH (PNP) Complemenary Silicon Power Transisors These complemenary silicon power ransisors are designed for highspeed swiching applicaions, such as swiching regulaors and high frequency

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems MECHANICAL DATA Pinning for : 1 = OUT, 2 = GND, 3 = V S 1926 FEATURES Very low supply curren Phoo deecor and preamplifier in one package Opimized for Sony and

More information

NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor March 996 NS352P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems 2 MECHNICAL DATA Pinning for TSOP44.., TSOP48..: = OUT, 2 = GND, 3 = V S Pinning for TSOP22.., TSOP24..: = OUT, 2 = V S, 3 = GND 3 6672 FEATURES Improved immuniy

More information

<IGBT Modules> CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE dual swich (Half-Bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren IC...... A Collecor-emier volage VCES... 2 V Maximum juncion

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems TSOP.., TSOP4.., TSOP6.., TSOP4.., TSOP44.., TSOP46.. IR Receiver Modules for Remoe Conrol Sysems MECHANICAL DATA Pinning for TSOP4...: = OUT, = GND, = V S Pinning for TSOP...: = OUT, = V S, = GND 667

More information

<IGBT Modules> CM150TX-24S HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM150TX-24S HIGH POWER SWITCHING USE INSULATED TYPE sixpack (3φ Inverer) Collecor curren...... 5 A Collecor-emier volage CES... Maximum juncion emperaure T jmax... 7 5 C Fla base Type APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems 1926 FEATURES Very low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Supply volage: 2.5 V o 5.5 V Improved immuniy

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems FEATURES Improved immuniy agains HF and RF noise Low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Supply volage:

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems FEATURES Very low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Supply volage: 2.5 V o 5.5 V Improved immuniy agains

More information

TLE 8088 EM. Data Sheet. Automotive Power. Engine management IC for Small Engines. Rev 1.0,

TLE 8088 EM. Data Sheet. Automotive Power. Engine management IC for Small Engines. Rev 1.0, Engine managemen IC for Small Engines Daa Shee Rev 1.0, 2012-10-01 Auomoive Power Table of Conens Table of Conens 1 Overview....................................................................... 3 2 Block

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems Descripion The HS38B3VM is a miniaurized receiver for infrared remoe conrol sysems. A PIN diode and a preamplifier are assembled on a lead frame, he epoxy package

More information

TSOP322.. IR Receiver Modules for Remote Control Systems VISHAY. Vishay Semiconductors

TSOP322.. IR Receiver Modules for Remote Control Systems VISHAY. Vishay Semiconductors TSOP3.. IR Receiver Modules for Remoe Conrol Sysems Descripion The TSOP3.. - series are miniaurized receivers for infrared remoe conrol sysems. PIN diode and preamplifier are assembled on lead frame, he

More information

Photo Modules for PCM Remote Control Systems

Photo Modules for PCM Remote Control Systems Phoo Modules for PCM Remoe Conrol Sysems TFMS 5..0 Available ypes for differen carrier frequencies Type f 0 Type f 0 TFMS 5300 30 khz TFMS 5330 33 khz TFMS 5360 36 khz TFMS 5370 36.7 khz TFMS 5380 38 khz

More information

IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : IGBT in and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Best in class TO247 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted

More information

<IGBT Modules> CM600DX-24T/CM600DXP-24T HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM600DX-24T/CM600DXP-24T HIGH POWER SWITCHING USE INSULATED TYPE DX DXP dual swich (half-bridge) Collecor curren IC...... 6 0 0 A Collecor-emier volage VCES... 1 2 0 0 V Maximum juncion emperaure T vjmax... 1 7 5 C Fla base ype Copper base plae (Nickel-plaing) RoHS

More information

<IGBT Modules> CM600DX-13T/CM600DXP-13T HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM600DX-13T/CM600DXP-13T HIGH POWER SWITCHING USE INSULATED TYPE DX DXP dual swich (half-bridge) Collecor curren IC...... Collecor-emier volage VCES... 6 0 0 A 6 5 0 V Maximum juncion emperaure T vjmax... 1 7 5 C Fla base ype Copper base plae (Nickel-plaing) RoHS Direcive

More information

HS0038B5. IR Receiver Modules for Remote Control Systems. Vishay Semiconductors

HS0038B5. IR Receiver Modules for Remote Control Systems. Vishay Semiconductors IR Receiver Modules for Remoe Conrol Sysems Descripion The - series are miniaurized receivers for infrared remoe conrol sysems. PIN diode and preamplifier are assembled on lead frame, he epoxy package

More information

PROFET BTS 840 S2. Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense

PROFET BTS 840 S2. Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense nfineon echnologies 1 of 15 23-Oc-1 查询 BTS84S2 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 POFET Smar High-Side Power Swich Two Channels: 2 x 3mΩ Curren Sense Produc Summary Package Operaing olage (on) 5...34 Acive

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems FEATURES Very low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Improved shielding agains EMI Supply volage: 2.5

More information

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems MECHANICAL DATA 2 Pinning for TSOP348.., TSOP344..: = OUT, 2 = GND, 3 = V S Pinning for TSOP322.., TSOP324..: = OUT, 2 = V S, 3 = GND 3 6672 FEATURES Very low supply curren Phoo deecor and preamplifier

More information

1N Amp SCHOTTKY RECTIFIER. Bulletin PD rev. C 11/02. Description/ Features. Major Ratings and Characteristics

1N Amp SCHOTTKY RECTIFIER. Bulletin PD rev. C 11/02. Description/ Features. Major Ratings and Characteristics SCHOTTKY ECTIFIE 60 Amp Major aings and Characerisics Descripion/ Feaures TO-203AB (DO-5) Characerisics Unis I F(AV) ecangular 60* A waveform V WM 45* V I FSM @ 60Hz 000* A V F @ 60 Apk, T = 25 C 0.68*

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems 2 MECHNICAL DATA Pinning for TSOP348.., TSOP344..: = OUT, 2 = GND, 3 = V S Pinning for TSOP322.., TSOP324..: = OUT, 2 = V S, 3 = GND 3 6672 FEATURES Very low

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems TSOP32.., TSOP34.. IR Receiver Modules for Remoe 2 3 MECHANICAL DATA Pinning: = GND, 2 = V S, 3 = OUT 94 869 FEATURES Very low supply curren Phoo deecor and preamplifier in one package Inernal filer for

More information

Primary Side Control SMPS with Integrated MOSFET

Primary Side Control SMPS with Integrated MOSFET General Descripion GG64 is a primary side conrol SMPS wih an inegraed MOSFET. I feaures programmable cable drop compensaion and a peak curren compensaion funcion, PFM echnology, and a CV/CC conrol loop

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems 2 MECHNICAL DATA Pinning for TSOP44.., TSOP48..: = OUT, 2 = GND, 3 = V S Pinning for TSOP22.., TSOP24..: = OUT, 2 = V S, 3 = GND 3 6672 FEATURES Low supply curren

More information

HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode

HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C 2VTRENCHSTOP

More information

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and 80/110A N-hannel Advanced Power MOSFET Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion S80110AT designed by he rench processing

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems MECHANICAL DATA Pinning for : 1 = OUT, 2 = GND, 3 = V S 1926 FEATURES Improved immuniy agains HF and RF noise Low supply curren Phoo deecor and preamplifier

More information

Photo Modules for PCM Remote Control Systems

Photo Modules for PCM Remote Control Systems Phoo Modules for PCM Remoe Conrol Sysems Descripion The HS38B series are miniaurized receivers for infrared remoe conrol sysems. PIN diode and preamplifier are assembled on lead frame, he epoxy package

More information

TSOP12.. IR Receiver Modules for Remote Control Systems VISHAY. Vishay Semiconductors

TSOP12.. IR Receiver Modules for Remote Control Systems VISHAY. Vishay Semiconductors TSOP1.. IR Receiver Modules for Remoe Conrol Sysems Descripion The TSOP1.. - series are miniaurized receivers for infrared remoe conrol sysems. PIN diode and preamplifier are assembled on lead frame, he

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BYV34 series Dual rectifier diodes ultrafast

DISCRETE SEMICONDUCTORS DATA SHEET. BYV34 series Dual rectifier diodes ultrafast DISCREE SEMICONDUCORS DAA SHEE Product specification October 998 FEAURES SYMBOL QUICK REFERENCE DAA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Low

More information

HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode

HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C VTRENCHSTOP TM

More information

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion H037N06L0650P designed by he rench processing echniques o achieve exremely

More information

PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View

PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View HEXFET Power MOSFET dvanced Process Technology Ulra Low On-Resisance ual N and P Channel Mosfe Surface Moun vailable in Tape & Reel ynamic dv/d Raing Fas Swiching escripion PRELIMINRY N-CHNNEL MOSFET 8

More information

HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode

HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode IKYNCS Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBTinTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: VTRENCHSTOP TM IGBTtechnologyoffering:

More information