ultrafast, low switching loss

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1 BYC6C FEAURES SYMBOL QUICK REFERENCE DAA Dual diode Extremely fast switching Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFE a1 a2 1 3 k 2 V R = 6 V V F 1.75 V I O(AV) = A t rr = 19 ns (typ) APPLICAIONS PINNING SO78 (O22AB) Active power factor correction PIN DESCRIPION Halfbridge lighting ballasts Halfbridge/ fullbridge switched 1 anode 1 mode power supplies. he BYC6C is supplied in 2 cathode the SO78 (O22AB) 3 anode 2 conventional leaded package. tab cathode tab 123 LIMIING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMEER CONDIIONS MIN. MAX. UNI V RRM Peak repetitive reverse voltage 6 V V RWM Crest working reverse voltage 6 V V R Continuous reverse voltage mb 1 C 5 V I O(AV) Average ouut current (both δ =.5; with reapplied V RRM() ; A I FRM diodes conducting) mb 5 C 1 Repetitive peak forward current δ =.5; with reapplied V RRM() ; per diode mb 5 C 1 A I FSM Nonrepetitive peak forward current per diode t = ms t = 8.3 ms 4 44 A A sinusoidal; j = 15 C prior to surge with reapplied V RWM() stg Storage temperature 4 15 C j Operating junction temperature 15 C HERMAL RESISANCES SYMBOL PARAMEER CONDIIONS MIN. YP. MAX. UNI R th jmb hermal resistance junction to per diode 2.5 K/W R th ja mounting base hermal resistance junction to both diodes in free air K/W K/W ambient 1 mb() limited by thermal runaway March 21 1 Rev 1.2

2 BYC6C ELECRICAL CHARACERISICS j = 25 C, per diode unless otherwise stated SYMBOL PARAMEER CONDIIONS MIN. YP. MAX. UNI V F Forward voltage I F = 5 A; j = 15 C V I F = A; j = 15 C V I F = 5 A; V I R Reverse current V R = 6 V V R = 5 V; j = C µa ma t rr Reverse recovery I F = 1 A; V R = 3 V; di F /dt = 5 A/µs 3 5 ns t rr Reverse recovery I F = 5 A; V R = 4 V; 19 ns di F /dt = 5 A/µs t rr Reverse recovery I F = 5 A; V R = 4 V; 25 3 ns di F /dt = 5 A/µs; j = C I rrm Peak reverse recovery current I F = 5 A; V R = 4 V;.7 3 A di F /dt = 5 A/µs; j = 125 C I rrm Peak reverse recovery current I F = 5 A; V R = 4 V; 8 11 A di F /dt = 5 A/µs; j = 125 C V fr Forward recovery voltage I F = A; di F /dt = A/µs 9 11 V Vin IL 15 uh typ ID Vo = 4 V d.c. OUPU DIODE Vin Vin = 4 V d.c. IR IF inductive load IL 5 V MOSFE Fig.1. ypical application, ouut rectifier in boost converter power factor correction circuit. Continuous conduction mode, where the transistor turns on whilst forward current is still flowing in the diode. Fig.2. ypical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. March 21 2 Rev 1.2

3 BYC6C Forward dissipation, PF (W) 15 Vo = 1.3 V Rs =.9 Ohms mb() C D = ID dif/dt Irrm ID = IL losses due to diode reverse recovery 5 I D = VD t Average forward current, IF(AV) (A) Fig.3. Maximum forward dissipation per diode as a function of average forward current; rectangular current waveform where I F(AV) =I F(RMS) x D. Fig.6. Origin of switching losses in transistor due to diode reverse recovery Diode reverse recovery switching losses, Pdsw (W) f = 2 khz VR = 4 V Reverse recovery, trr (ns).1 A 7.5 A A 7.5 A.5 Fig.4. ypical reverse recovery switching losses per diode, as a function of rate of change of current di F /dt. VR = 4 V Fig.7. ypical reverse recovery t rr, per diode as a function of rate of change of current di F /dt. 5 4 ransistor losses due to diode reverse recovery, Ptsw (W) f = 2 khz VR = 4 V A Peak reverse recovery current, Irrm (A) A 1 Fig.5. ypical switching losses in transistor due to reverse recovery of diode, as a function of of change of current di F /dt. A VR = 4 V 1 Fig.8. ypical peak reverse recovery current per diode, I rrm as a function of rate of change of current di F /dt. March 21 3 Rev 1.2

4 BYC6C I F di F dt 8 Forward current, IF (A) j = 25 C j = 15 C t rr 6 typ 4 Q s % % 2 I R I rrm Fig.9. Definition of reverse recovery parameters t rr, I rrm Forward voltage, VF (V) Fig.12. ypical and imum forward characteristic per diode, I F = f(v F ); j = 25 C and 15 C Peak forward recovery voltage, Vfr (V) j = 25 C IF = A typ ma ma 1mA Reverse leakage current (A) C ua 75 C 5 ua 5 C 25 C Rate of change of current, dif/dt (A/ s) Fig.. ypical forward recovery voltage per diode, V fr as a function of rate of change of current di F /dt. 1uA Reverse voltage (V) Fig.13. ypical reverse leakage current per diode as a function of reverse voltage. I R = f(v R ); parameter j I F ransient thermal impedance, Zth jmb (K/W) 1.1 V F V fr V F Fig.11. Definition of forward recovery voltage V fr.1 D = t.1 1us us us 1ms ms ms 1s s pulse width, (s) BYV29 Fig.14. Maximum thermal impedance per diode, Z th jmb as a function of pulse width. P D March 21 4 Rev 1.2

5 BYC6C MECHANICAL DAA Dimensions in mm Net Mass: 2 g 4,5,3 3,7 1,3 2,8 5,9 min 15,8 3, not tinned 1,3 (2x) ,54 2,54 3, 13,5 min,9 (3x),6 2,4 Notes 1. Refer to mounting instructions for SO78 (O22) envelopes. 2. Epoxy meets UL94 V at 1/8". Fig.15. SO78 (O22AB); pin 2 connected to mounting base. March 21 5 Rev 1.2

6 BYC6C DEFINIIONS Data sheet status Objective specification his data sheet contains target or goal specifications for product development. Preliminary specification his data sheet contains preliminary data; supplementary data may be published later. his data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. hese are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 21 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. he information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPOR APPLICAIONS hese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 21 6 Rev 1.2

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