<IGBT Modules> CM400DY-13T HIGH POWER SWITCHING USE INSULATED TYPE

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1 dual swich (half-bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OPTION (Below opions are available.) PC-TIM (Phase Change Thermal Inerface Maerial) pre-apply VCEsa selecion for parallel connecion OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren IC Collecor-emier volage VCES A V Maximum juncion emperaure T vjm a x C Fla base ype Copper base plae (Nickel-plaing) Nickel-plaing ab erminals RoHS Direcive complian UL Recognized under UL1557, File No.E Dimension in mm INTERNAL CONNECTION Di1 Tr2 Tr1 Di2 G1 E1 (Es1) (Es2) Tolerance oherwise specified Division of Dimension Tolerance 0.5 o 3 ±0.2 over 3 o 6 ±0.3 over 6 o 30 ±0.5 over 30 o 120 ±0.8 over 120 o 400 ±1.2 JIS B 0405 c Publicaion Dae : February

2 MAXIMUM RATINGS (Tvj=25 C, unless oherwise specified) Symbol Iem Condiions Raing Uni V CES Collecor-emier volage G-E shor-circuied 650 V V GES Gae-emier volage C-E shor-circuied ± 20 V I C DC, TC=125 C (Noe2, 4) 400 Collecor curren (Noe3) I CRM Pulse, Repeiive 800 P o Toal power dissipaion TC=25 C (Noe2, 4) 2830 W (Noe1) IE DC (Noe2) 400 Emier curren IERM (Noe1) Pulse, Repeiive (Noe3) 800 V i s o l Isolaion volage Terminals o base plae, RMS, f=60 Hz, AC 1 min 4000 V T vjm a x Maximum juncion emperaure Insananeous even (overload) 175 T C m a x Maximum case emperaure (Noe4) 125 T vjop Operaing juncion emperaure Coninuous operaion (under swiching) -40 ~ +150 T s g Sorage emperaure ~ +125 ELECTRICAL CHARACTERISTICS (T vj=25 C, unless oherwise specified) Symbol Iem Condiions Limis Min. Typ. Max. I CES Collecor-emier cu-off curren VCE=VCES, G-E shor-circuied ma I G ES Gae-emier leakage curren VGE=VGES, C-E shor-circuied μa V G E( h) Gae-emier hreshold volage IC=40 ma, VCE=10 V V V CEsa (Terminal) V CEsa (Chip) Collecor-emier sauraion volage IC=400 A, VGE=15 V, T vj=25 C Refer o he figure of es circui T vj=125 C V (Noe5) T vj=150 C IC=400 A, T vj=25 C VGE=15 V, T vj=125 C V (Noe5) T vj=150 C C ies Inpu capaciance C o e s Oupu capaciance V CE=10 V, G-E shor-circuied nf C r e s Reverse ransfer capaciance Q G Gae charge VCC=300 V, IC=400 A, VGE=15 V μc d ( o n ) Turn-on delay ime VCC=300 V, IC=400 A, VGE=±15 V, r Rise ime d ( o f f ) Turn-off delay ime RG=1.6 Ω, Inducive load f Fall ime V EC (Noe.1) (Terminal) V EC (Noe.1) (Chip) Emier-collecor volage IE=400 A, G-E shor-circuied, T vj=25 C Refer o he figure of es circui T vj=125 C V (Noe5) T vj=150 C IE=400 A, T vj=25 C G-E shor-circuied, T vj=125 C V (Noe5) T vj=150 C rr (Noe1) Reverse recovery ime VCC=300 V, IE=400 A, VGE=±15 V, ns Q rr (Noe1) Reverse recovery charge R G=1.6 Ω, Inducive load μc E on Turn-on swiching energy per pulse V CC=300 V, I C=I E=400 A, E off Turn-off swiching energy per pulse V GE=±15 V, R G=1.6 Ω, T vj=150 C, E rr (Noe1) Reverse recovery energy per pulse Inducive load mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, TC=25 C (Noe4) mω r g Inernal gae resisance Per swich Ω A A C C Uni ns mj Publicaion Dae : February

3 THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. R h ( j - c ) Q Juncion o case, per Inverer IGBT (Noe4) Thermal resisance R h ( j - c)d Juncion o case, per Inverer FWD (Noe4) R h ( c - s ) Conac hermal resisance MECHANICAL CHARACTERISTICS Case o hea sink, per 1 module Symbol Iem Condiions Uni K/kW Thermal grease applied (Noe4, 6) K/kW Limis Min. Typ. Max. M Mouning orque Main erminals M 5 screw N m M s Mouning orque Mouning o hea sink M 6 screw N m d s d a Creepage disance Clearance Terminal o erminal Terminal o base plae Terminal o erminal Terminal o base plae e c Flaness of base plae On he cenerline (Noe7) ± μm m mass g *: This produc is complian wih he Resricion of he Use of Cerain Hazardous Subsances in Elecrical and Elecronic Equipmen (RoHS) direcive 2011/65/EU. Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free-wheeling diode (FWD). 2. Juncion emperaure (T vj) should no increase beyond T vjm a x raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T vj) dose no exceed T vjm a x raing. 4. Case emperaure (TC) and hea sink emperaure (T S ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. Refer o he figure of es circui. 6. Typical value is measured by using hermally conducive grease of λ=3.0 W/(m K)/D(C-S)=50 μm. 7. The base plae (mouning side) flaness measuremen poins (X) are shown in he following figure. Uni mm mm Mouning side 18.3 mm +: Convex X Mouning side 5 mm 5 mm 18.3 mm Publicaion Dae : February

4 RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. V CC (DC) Supply volage Applied across - erminals V V GEon Gae (-emier drive) volage Applied across G1-Es1/-Es2 erminals V RG Exernal gae resisance Per swich Ω Uni CHIP LOCATION (Top view) Dimension in mm, olerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWD Opion: PC-TIM applied baseplae ouline Publicaion Dae : February

5 TEST CIRCUIT AND WAVEFORMS -V GE G1 Es1 i E Load + V CC 0 V v GE i C ~ ~ 90 % 0 90 % i E 0 A I E Q rr =0.5 I rr rr rr 0 V +V GE -V GE R G vge Es2 vce i C 0 A d ( o n ) Swiching characerisics es circui and waveforms r d ( o ff ) f 10% I rr 0.5 I rr rr, Qrr characerisics es waveform IEM vce ICM VCC ic ic ic VCC VCC ICM ICM vce vce ie vec VCC 0 A ICM i 0.1 VCC VCC 0.1 VCC 0 i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy FWD Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) 0.02 ICM 0.02 ICM 0 V i TEST CIRCUIT V GE=15 V V G-E shorcircuied G1 Es1 IC G-E shorcircuied V GE=15 V G1 Es1 V IC G-E shorcircuied V G-E shorcircuied G1 Es1 IE G-E shorcircuied G-E shorcircuied G1 Es1 V IE Es2 Es2 Es2 Es2 Tr1 Tr2 Di1 Di2 VCEsa characerisics es circui VEC characerisics es circui Publicaion Dae : February

6 PERFORMANCE CURVES OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS T vj=25 C (Chip) V GE=15 V (Chip) COLLECTOR CURRENT IC (A) VGE=20 V 15 V 13.5 V 12 V 11 V 10 V 9 V 8 V COLLECTOR-EMITTER SATURATION VOLTAGE VCEsa (V) T vj=125 C T vj=150 C T vj=25 C COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS T vj=25 C (Chip) G-E shor-circuied (Chip) T vj=125 C COLLECTOR-EMITTER VOLTAGE VCE (V) I C=800 A I C=400 A I C=200 A EMITTER CURRENT IE (A) T vj=150 C T vj=25 C GATE-EMITTER VOLTAGE V GE (V) EMITTER-COLLECTOR VOLTAGE V EC (V) Publicaion Dae : February

7 PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS V CC=300 V, V GE=±15 V, R G=1.6 Ω, INDUCTIVE LOAD V CC=300 V, V GE=±15 V, I C=400 A, INDUCTIVE LOAD : T vj=150 C, : T vj=125 C : T vj=150 C, : T vj=125 C d ( o ff) SWITCHING TIME (ns) d ( o n ) r f SWITCHING TIME (ns) d ( o ff) d ( o n ) r f COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS V CC=300 V, V GE=±15 V, R G=1.6 Ω, V CC=300 V, V GE=±15 V, I C/I E=400 A, INDUCTIVE LOAD, PER PULSE INDUCTIVE LOAD, PER PULSE : T vj=150 C, : T vj=125 C : T vj=150 C, : T vj=125 C E o f f SWITCHING ENERGY (mj) REVERSE RECOVERY ENERGY (mj) E rr E on SWITCHING ENERGY (mj) REVERSE RECOVERY ENERGY (mj) E on E o f f E rr COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) EXTERNAL GATE RESISTANCE R G (Ω) Publicaion Dae : February

8 PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS V CC=300 V, V GE=±15 V, R G=1.6 Ω, INDUCTIVE LOAD G-E shor-circuied, T vj=25 C : T vj=150 C, : T vj=125 C C i e s I r r CAPACITANCE (nf) C o e s rr (ns), I rr (A) r r C r e s COLLECTOR-EMITTER VOLTAGE V CE (V) EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS V CC=300 V, I C=400 A, T vj=25 C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single pulse, T C=25 C R h ( j - c ) Q=53 K/kW, R h ( j - c)d=84 K/kW GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL RESISTANCE Z h ( j - c) GATE CHARGE Q G (nc) TIME (S) Publicaion Dae : February

9 PERFORMANCE CURVES TURN-OFF SWITCHING SAFE OPERATING AREA (REVERSE BIAS SAFE OPERATING AREA) (MAXIMUM) SHORT-CIRCUIT SAFE OPERATING AREA (MAXIMUM) V CC 450 V, V GE=±15 V, R G=1.6~16 Ω, : T vj=25~150 C (Normal load operaions (Coninuous) V CC 400 V, V GE=±15 V, R G=1.6~16 Ω, : T vj=175 C (Unusual load operaions (Limied period) T vj= 25 ~ 150 C, W 8 μs, Non-Repeiive NORMALIZED COLLECTOR CURRENT IC NORMALIZED COLLECTOR CURRENT IC COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) Noe: The characerisics curves are presened for reference only and no guaraneed by producion es, unless oherwise noed. Publicaion Dae : February

10 Keep safey firs in your circui designs! This produc is designed for indusrial applicaion purpose. The performance, he qualiy and suppor level of he produc is guaraneed by Cusomer's Sd. Spec.. Misubishi Elecric Corporaion pus is reasonable effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem by he reliabiliy lifeime such as Power Cycle, Thermal Cycle or ohers, or o be used under special circumsances(e.g. high humidiy, dusy, saly, highlands, environmen wih los of organic maer / corrosive gas / explosive gas, or siuaion which erminal of semiconducor producs is received srong mechanical sress). In he cusomer's research and developmen, please evaluae i no only wih a single semiconducor produc bu also in he enire sysem, and judge wheher i's applicable. Furhermore, rouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis (e.g. appropriae fuse or circui breaker beween a power supply and semiconducor producs), (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publicaion Dae : February Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams and chars represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, and chars, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Therefore, his produc should no be used in such applicaions. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. In he case of new requiremen is available, his maerial will be revised upon consulaion. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or re-expor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. Generally he lised company name and he brand name are he rademarks or regisered rademarks of he respecive companies.

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