< IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

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1 CIB (Converter+Inverter+Chopper Brake) Collector current I C A Collector-emitter voltage CES... 2 Maximum junction temperature T jmax C Flat base Type APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Copper base plate (non-plating) Tin plating pin terminals RoHS Directive compliant Recognized under UL557, File E Dimension in mm TERMINAL t=.8 SECTION A P(54~56) N(59~6) R(~2) S(5~6) T(9~) P(48~49) ClampDi GB(4) N(44~45) B(52~53) INTERNAL CONNECTION GUP(3) GUN(4) GP(8) U(4~5) GN(33) GWP(23) (9~2) GWN(3) Es'(39) Caution: Each (two or three) pin terminal of P/N/P/N/U//W/B/R/S/T is connected in the module, but should use all each three pins for the external wiring. W(24~25) TH(29) NTC TH2(28) Es(32) Tolerance otherwise specified Division of Dimension.5 to 3 ±.2 over 3 to 6 ±.3 over 6 to 3 ±.5 over 3 to 2 ±.8 over 2 to 4 ±.2 Tolerance The tolerance of size between terminals is assumed to be ±.4. Publication Date : June.2

2 ABSOLUTE MAXIMUM RATINGS (T j =25 C, unless otherwise specified) INERTER PART IGBT/FWDi Rating CES Collector-emitter voltage G-E short-circuited 2 GES Gate-emitter voltage C-E short-circuited ±2 (Note.2, 4) I C DC, T C =22 C 75 Collector current (Note.3) Pulse, Repetitive 5 A I CRM P tot Total power dissipation T C =25 C RM (Note.) (Note.) Emitter current T C =25 C (Note.2, 4) (Note.2, 4) Pulse, Repetitive (Note.3) 6 W T jmax Maximum junction temperature - 75 C BRAKE PART IGBT/CLAMPDi Rating CES Collector-emitter voltage G-E short-circuited 2 GES Gate-emitter voltage C-E short-circuited ±2 I C DC, T C =25 C Collector current Pulse, Repetitive I CRM P tot Total power dissipation T C =25 C (Note.2, 4) (Note.2, 4) (Note.3) A A 425 W RRM Repetitive peak reverse voltage G-E short-circuited 2 I F T C =25 C Forward current Pulse, Repetitive I FRM (Note.2, 4) T jmax Maximum junction temperature - 75 C CONERTER PART Di Rating RRM Repetitive peak reverse voltage - 6 E a Recommended AC input voltage RMS 44 (Note.3) I O DC output current 3-phase full wave rectifying, T C =25 C I FSM Surge forward current The sine half wave cycle peak value, f=6 Hz, non-repetitive (Note.2) 5 A 75 A 75 A I 2 t Current square time alue for one cycle of surge current 234 A 2 s T jmax Maximum junction temperature - 5 C MODULE Rating T Cmax Maximum case temperature (Note.2) T jop Operating junction temperature - -4 ~ +5 T stg Storage temperature - -4 ~ C isol Isolation voltage Terminals to base plate, RMS, f=6 Hz, AC min 25 MECHANICAL CHARACTERISTICS M s Mounting torque Mounting to heat sink M 5 screw N m d s d a Creepage distance Clearance Terminal to terminal Terminal to base plate Terminal to terminal Terminal to base plate m Weight g e c Flatness of base plate On the centerline X, Y (Note.5) C mm mm ± - + μm Publication Date : June.2 2

3 ELECTRICAL CHARACTERISTICS (T j =25 C, unless otherwise specified) INERTER PART IGBT/FWDi I CES Collector-emitter cut-off current CE = CES, G-E short-circuited - -. ma I GES Gate-emitter leakage current GE = GES, C-E short-circuited μa GE(th) Gate-emitter threshold voltage I C =7.5 ma, CE = CEsat Collector-emitter saturation voltage I C =75 A (Note.6), T j =25 C GE =5, T j =25 C (Terminal) T j =5 C I C =75 A (Note.6), T j =25 C GE =5, T j =25 C (Chip) T j =5 C C ies Input capacitance C oes Output capacitance CE =, G-E short-circuited Reverse transfer capacitance C res Q G Gate charge CC =6, I C =75 A, GE = nc t d(on) Turn-on delay time CC =6, I C =75 A, GE =±5, Rise time t r t d(off) Turn-off delay time R G =8.2 Ω, Inductive load Fall time t f EC (Note.) t rr (Note.) Emitter-collector voltage =75 A (Note.6), T j =25 C G-E short-circuited, T j =25 C (Terminal) T j =5 C =75 A (Note.6), T j =25 C G-E short-circuited, T j =25 C (Chip) T j =5 C Reverse recovery time CC =6, =75 A, GE =±5, ns Q rr (Note.) Reverse recovery charge R G =8.2 Ω, Inductive load μc E on Turn-on switching energy per pulse CC =6, I C = =75 A, E off Turn-off switching energy per pulse GE =±5, R G =8.2 Ω, T j =5 C, E rr (Note.) Reverse recovery energy per pulse Inductive load mj R CC'+EE' Internal lead resistance Main terminals-chip, per switch, mω (Note.2) T C =25 C r g Internal gate resistance Per switch - - Ω BRAKE PART IGBT/CLAMPDi I CES Collector-emitter cut-off current CE = CES, G-E short-circuited - -. ma I GES Gate-emitter leakage current GE = GES, C-E short-circuited μa GE(th) Gate-emitter threshold voltage I C =5 ma, CE = CEsat Collector-emitter saturation voltage I C =5 A (Note.6), T j =25 C GE =5, T j =25 C (Terminal) T j =5 C I C =5 A (Note.6), T j =25 C GE =5, T j =25 C (Chip) T j =5 C C ies Input capacitance C oes Output capacitance CE =, G-E short-circuited - -. Reverse transfer capacitance C res Q G Gate charge CC =6, I C =5 A, GE =5-7 - nc nf ns mj nf Publication Date : June.2 3

4 ELECTRICAL CHARACTERISTICS (cont.; T j =25 C, unless otherwise specified) BRAKE PART IGBT/CLAMPDi t d(on) Turn-on delay time CC =6, I C =5 A, GE =±5, Rise time t r t d(off) Turn-off delay time R G =3 Ω, Inductive load Fall time t f F Forward voltage I F =5 A (Note.6), T j =25 C G-E short-circuited, T j =25 C (Terminal) T j =5 C I F =5 A (Note.6), T j =25 C G-E short-circuited, T j =25 C (Chip) T j =5 C t rr Reverse recovery time CC =6, I F =5 A, GE =±5, ns Q rr Reverse recovery charge R G =3 Ω, Inductive load μc E on Turn-on switching energy per pulse CC =6, I C =I F =5 A, E off Turn-off switching energy per pulse GE =±5, R G =3 Ω, T j =5 C, E rr Reverse recovery energy per pulse Inductive load mj r g Internal gate resistance Ω CONERTER PART CONDi I RRM Repetitive peak reverse current R = RRM, T j =5 C ma F (Note.6) Forward voltage I (Terminal) F =75 A NTC THERMISTOR PART R 25 Zero-power resistance T C =25 C (Note.2) ns mj kω ΔR/R Deviation of resistance T C = C, R =493 Ω % B (25/5) B-constant Approximate by equation P 25 Power dissipation T C =25 C THERMAL RESISTANCE CHARACTERISTICS (Note.2) (Note.7) K - - mw R th(j-c)q Junction to case, per Inverter IGBT R th(j-c)d Junction to case, per Inverter FWDi R th(j-c)q Thermal resistance Junction to case, per Brake IGBT R th(j-c)d Junction to case, per Brake ClampDi R th(j-c)d R th(c-s) (Note.2) Contact thermal resistance (Note.2) Junction to case, per Converter ConvDi K/W Case to heat sink, per module, K/kW (Note.8) Thermal grease applied K/W K/W Publication Date : June.2 4

5 Note.: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2: Case temperature (T C ) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T jmax rating. 4: Junction temperature (T j ) should not increase beyond T jmax rating. 5: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. +:Convex -:Concave X Y mounting side mounting side -:Concave mounting side +:Convex 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. R 7: B ln( 25 ( 25 / 5) )/( ), R5 T25 T5 R 25 : resistance at absolute temperature T 25 [K]; T 25 =25 [ C]+273.5=298.5 [K] R 5 : resistance at absolute temperature T 5 [K]; T 5 =5 [ C]+273.5=323.5 [K] 8: Typical value is measured by using thermally conductive grease of λ=.9 W/(m K). 9: Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "M2.6 or M2.6 2 self tapping screw" The length of the screw depends on the thickness of the PCB. RECOMMENDED OPERATING CONDITIONS (T a =25 C) CC (DC) Supply voltage Applied across P-N/P-N terminals GEon Gate (-emitter drive) voltage Applied across GB-Es/ G*P-*/G*N-Es(*=U,, W) terminals R G External gate resistance Per switch Inverter IGBT Brake IGBT 3-3 Ω Publication Date : June.2 5

6 CHIP LOCATION (Top view) Dimension in mm, tolerance: ± mm Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi (*=U//W), DiBr: ClampDi, CR*P/CR*N: ConvDi (*=R/S/T), Th: NTC thermistor TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % - GE Load t i E Q rr =.5 I rr t rr t rr + CC i C ~ 9 % A t + GE R G CE I rr.5 I rr - GE GE i C A t d(on) t r t d(off) t f % t Switching characteristics test circuit and waveforms t rr, Q rr test waveform I CM i C i C I CM i E M v EC CC v CE CC CC v CE A t. I CM. CC t. CC.2 I CM t t t i t i t i IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : June.2 6

7 TEST CIRCUIT 48/49 48/49 48/49 P GE=5 3 I C GE=5 8 I C GE=5 23 I C 4/5 9/2 24/25 B GE=5 GB I C 32 44/ / /45 Es N GUP P GP P GWP P 48/49 I F U W 52/53 GE=5 GUN I C GE=5 GN I C GE=5 GWN I C 4 Es N Es N Es N 32 44/45 G-E short-circuited GP-, GN-Es, GWP-W, GWN-Es, GB-Es G-E short-circuited GUP-U, GUN-Es, GWP-W, GWN-Es, GB-Es G-E short-circuited GUP-U, GUN-Es, GP-, GN-Es, GB-Es G-E short-circuited GUP-U, GUN-Es, GP-, GN-Es, GWP-W, GWN-Es UP / UN IGBT P / N IGBT WP / WN IGBT Brake IGBT / ClampDi CEsat / ClampDi F test circuit 3 48/ / /49 54/55/56 I F 4/5 9/2 24/25 / / / /45 59/6/6 GUP P GP P GWP P P GUN U GN GWN W R I F Es N Es N Es N N G-E short-circuited GP-, GN-Es, GWP-W, GWN-Es, GB-Es G-E short-circuited GUP-U, GUN-Es, GWP-W, GWN-Es, GB-Es G-E short-circuited GUP-U, GUN-Es, GP-, GN-Es, GB-Es UP / UN FWDi P / N FWDi WP / WN FWDi ConvDi (ex. phase-r) EC / ConvDi F test circuit * In the above test circuit, should use all three main pin terminals (P/N/P/N/U//W) for connection with the terminals and the current source. Publication Date : June.2 7

8 PERFORMANCE CURES INERTER PART OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS 5 T j =25 C (Chip) GE =5 (Chip) 3.5 GE = T j =5 C COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION OLTAGE CE () T j =25 C T j =25 C COLLECTOR-EMITTER OLTAGE CE () 5 5 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS T j =25 C (Chip) G-E short-circuited (Chip) 8 I C =5 A COLLECTOR-EMITTER SATURATION OLTAGE CE () I C =75 A I C =3 A EMITTER CURRENT IE (A) T j =5 C T j =25 C T j =25 C GATE-EMITTER OLTAGE GE () EMITTER-COLLECTOR OLTAGE EC () Publication Date : June.2 8

9 PERFORMANCE CURES INERTER PART CC =6, GE =±5, R G =8.2 Ω, INDUCTIE LOAD : T j =5 C, : T j =25 C CC =6, GE =±5, I C =75 A, INDUCTIE LOAD : T j =5 C, : T j =25 C t d(off) t f t f SWITCHING TIME (ns) t d(on) t r SWITCHING TIME (ns) t d(off) t d(on) t r COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω) CC =6, GE =±5, R G =8.2 Ω, INDUCTIE LOAD, PER PULSE : T j =5 C, : T j =25 C CC =6, GE =±5, I C =75 A, INDUCTIE LOAD, PER PULSE : T j =5 C, : T j =25 C SWITCHING ENERGY (mj) E off E on REERSE RECOERY ENERGY (mj) SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E off E rr E rr. COLLECTOR CURRENT I C (A) EMITTER CURRENT (A) EXTERNAL GATE RESISTANCE R G (Ω) Publication Date : June.2 9

10 PERFORMANCE CURES INERTER PART CAPACITANCE CHARACTERISTICS G-E short-circuited, T j =25 C FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC =6, GE =±5, R G =8.2 Ω, INDUCTIE LOAD : T j =5 C, : T j =25 C C ies CAPACITANCE (nf) C oes t rr (ns), I rr (A) I rr t rr. C res.. COLLECTOR-EMITTER OLTAGE CE () EMITTER CURRENT (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) CC =6, I C =75 A, T j =25 C Single pulse, T C =25 C R th(j-c)q =.25 K/W, R th(j-c)d =.4 K/W 2 GATE-EMITTER OLTAGE GE () NORMALIZED TRANSIENT THERMAL RESISTANCE Z th(j-c) GATE CHARGE Q G (nc) TIME (S) Publication Date : June.2

11 PERFORMANCE CURES BRAKE PART COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS CLAMP DIODE FORWARD CHARACTERISTICS 3.5 GE =5 (Chip) G-E short-circuited (Chip) 3 T j =5 C COLLECTOR-EMITTER SATURATION OLTAGE CEsat () T j =25 C T j =25 C FORWARD OLTAGE F () T j =5 C T j =25 C T j =25 C COLLECTOR CURRENT I C (A) FORWARD CURRENT I F (A) CC =6, GE =±5, R G =3 Ω, INDUCTIE LOAD : T j =5 C, : T j =25 C CC =6, I C =5 A, GE =±5, INDUCTIE LOAD : T j =5 C, : T j =25 C t d(off) t f t f SWITCHING TIME (ns) t d(on) t r SWITCHING TIME (ns) t d(off) t d(on) t r COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω) Publication Date : June.2

12 PERFORMANCE CURES BRAKE PART CC =6, GE =±5, R G =3 Ω, INDUCTIE LOAD, PER PULSE : T j =5 C, : T j =25 C CC =6, I C /I F =5 A, GE =±5, INDUCTIE LOAD, PER PULSE : T j =5 C, : T j =25 C E rr SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E off E on SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E off E rr. COLLECTOR CURRENT I C (A) FORWARD CURRENT I F (A) CLAMP DIODE REERSE RECOERY CHARACTERISTICS EXTERNAL GATE RESISTANCE R G (Ω) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) CC =6, GE =±5, R G =3 Ω, INDUCTIE LOAD : T j =5 C, : T j =25 C Single pulse, T C =25 C R th(j-c)q =.35 K/W, R th(j-c)d =.63 K/W t rr (ns), I rr (A) t rr I rr NORMALIZED TRANSIENT THERMAL RESISTANCE Z th(j-c) FORWARD CURRENT I F (A) TIME (S) Publication Date : June.2 2

13 PERFORMANCE CURES CONERTER PART CONERTER DIODE FORWARD CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single pulse, T C =25 C R th(j-c)d =.24 K/W FORWARD CURRENT IF (A) T j =25 C T j =25 C NORMALIZED TRANSIENT THERMAL RESISTANCE Z th(j-c) FORWARD OLTAGE F () TIME (S) Publication Date : June.2 3

14 Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page ( When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information containedherein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 2 MITSUBISHLECTRIC CORPORATION. ALL RIGHTS RESERED. Publication Date : June.2 4

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