Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and

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1 80/110A N-hannel Advanced Power MOSFET Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion S80110AT designed by he rench processing echniques o achieve exremely low on-resisance. Addiional feaures of his design are fas swiching speed and improved repeiive avalanche raing. These feaures combine o make his design an exremely efficien and reliable device for use in Auomoive applicaions. Absolue Maximum aings Sresses beyond hose lised under Absolue Maximum aings may cause permanen damage o he device. These are sress raings only;and funcional operaion of he device a hese or any oher condiion beyond hose indicaed in he specificaions is no implied. Exposure o absolue-maximum-raed condiions for exended periods may affec device reliabiliy. The hermal resisance and power dissipaion raings are measured under board mouned and sill air condiions. Ambien emperaure (TA) is 25, unless oherwise specified. Symbol Parameer aing Uni ommon aings (T=25 Unless Oherwise Noed) GS Gae-Source olage ±20 T J Maximum Juncion Temperaure 150 T STG Sorage Temperaure ange -55 o 150 S Diode oninuous Forward urren Mouned on Large Hea Sink T =25 80 A DM Pulse Drain urren Tesed D P D oninuous Drain urren (GS=10) Maximum Power Dissipaion T = A T = T = T = W T = W J Thermal esisance-juncion o ase 0.50 /W JA Thermal esisance Juncion-Ambien 62.5 /W Drain-Source Avalanche aings EAS Avalanche Energy, Single Pulsed 900 mj A opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 Page 1, Toal 5

2 80/110A N-hannel Advanced Power MOSFET Elecrical TJ = 25 (unless oherwise saed) Symbol Parameer ondiion Min Typ Max Uni Saic Elecrical TJ = 25 (unless oherwise saed) (B)DSS DSS Drain-Source Breakdown olage GS=0, D=250μA Zero Gae olage Drain urren(tc=25 ) DS=75,GS= na Zero Gae olage Drain urren(tc=125 ) DS=75,GS= μa GSS GS(TH) DS(ON) gfs Gae-Body Leakage urren GS=±20,DS= ±100 na Gae Threshold olage DS=GS,D=250μA Drain-Source On-Sae esisance GS=10, D=40A mω Forward Transconducance DS= 10, D=15A S Dynamic Elecrical TJ = 25 (unless oherwise saed) iss oss rss g gs gd npu apaciance pf DS=40,GS=0, Oupu apaciance pf f=1mhz everse Transfer apaciance pf Toal Gae harge n DS=40,D=50A, Gae-Source harge n GS=10 Gae-Drain harge n Swiching haracerisics d(on) r d(off) f Turn-on Delay Time ns Turn-on ise Time DD=40, D=50A, ns Turn-Off Delay Time G=5Ω, ns GS=10 Turn-Off Fall Time ns Source- Drain Diode haracerisics SD SDM SD rr Source-drain oninuous urren A Tc=25 Pulsed Source-drain urren (Body Diode) A Forward on volage, Tj=25, SD=55A,GS= everse ecovery Time, Tj=25 F=40A,DD=25 di/d=100a/μs ns Noes: 1. epeiive aing: Pulse widh limied by maximum juncion emperaure 2. Saring TJ=25, G=25Ω,D=40A,GS=10 opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 Page 2, Toal 5

3 Elecrical characerisics (curves) S80110AT 80/110A N-hannel Advanced Power MOSFET DS, Drain -Source olage () Fig1. Typical Oupu haracerisics Tc - ase Temperaure ( ) Fig2. Maximum Drain urren s.ase Temperaure GS, Gae -Source olage () Fig3. Typical Transfer haracerisics Tj - Juncion Temperaure ( ) Fig4. Normalized On-esisance s. Temperaure don,on esisance (mω) D - Drain urren (A) D, Drain-Source urren (A) Normalized On esisance D, Drain-Source urren (A) D, Drain-Source urren (A) GS, Gae -Source olage () Fig5. Typical On-esisance s. Gae -Source olage opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 DS, Drain -Source olage () Fig6. Maximum Safe Operaing Area Page 3, Toal 5

4 80/110A N-hannel Advanced Power MOSFET SD, Source-Drain olage () Fig7. Typical Source-Drain Diode Forward olage g -Toal Gae harge (n) Fig8. Typical Gae harge s.gae-source olage GS(TH), Gae -Source olage (), apaciance (pf) SD, everse Drain urren (A) GS, Gae-Source olage () Tj - Juncion Temperaure ( ) Fig9. Threshold olage s. Temperaure DS, Drain-Source olage () Fig10. Typical apaciance s.drain-source olage Fig11. Unclamped nducive Tes ircui and waveforms Fig12. Swiching Time Tes ircui and waveforms opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 Page 4, Toal 5

5 80/110A N-hannel Advanced Power MOSFET TO-220AB Package Ouline Daa Dimensions (uni: mm) Symbol Min Typ Max A A A b b c D D DEP E E E ΦP e 2.54 BS e BS H L L L ΦP θ θ Noes: 1. efer o JEDE TO-220 variaion AB 2. Dimension "D" and "E" do NOT include mold flash. Mold flash shall no exceed 0.127mm per side. usomer Service Sales and Service: sales@vgsemi.com anguard Semiconducor O., LTD TEL: (86-755) FAX: (86-755) WEB: opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 Page 5, Toal 5

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion H037N06L0650P designed by he rench processing echniques o achieve exremely

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