Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and
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1 80/110A N-hannel Advanced Power MOSFET Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion S80110AT designed by he rench processing echniques o achieve exremely low on-resisance. Addiional feaures of his design are fas swiching speed and improved repeiive avalanche raing. These feaures combine o make his design an exremely efficien and reliable device for use in Auomoive applicaions. Absolue Maximum aings Sresses beyond hose lised under Absolue Maximum aings may cause permanen damage o he device. These are sress raings only;and funcional operaion of he device a hese or any oher condiion beyond hose indicaed in he specificaions is no implied. Exposure o absolue-maximum-raed condiions for exended periods may affec device reliabiliy. The hermal resisance and power dissipaion raings are measured under board mouned and sill air condiions. Ambien emperaure (TA) is 25, unless oherwise specified. Symbol Parameer aing Uni ommon aings (T=25 Unless Oherwise Noed) GS Gae-Source olage ±20 T J Maximum Juncion Temperaure 150 T STG Sorage Temperaure ange -55 o 150 S Diode oninuous Forward urren Mouned on Large Hea Sink T =25 80 A DM Pulse Drain urren Tesed D P D oninuous Drain urren (GS=10) Maximum Power Dissipaion T = A T = T = T = W T = W J Thermal esisance-juncion o ase 0.50 /W JA Thermal esisance Juncion-Ambien 62.5 /W Drain-Source Avalanche aings EAS Avalanche Energy, Single Pulsed 900 mj A opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 Page 1, Toal 5
2 80/110A N-hannel Advanced Power MOSFET Elecrical TJ = 25 (unless oherwise saed) Symbol Parameer ondiion Min Typ Max Uni Saic Elecrical TJ = 25 (unless oherwise saed) (B)DSS DSS Drain-Source Breakdown olage GS=0, D=250μA Zero Gae olage Drain urren(tc=25 ) DS=75,GS= na Zero Gae olage Drain urren(tc=125 ) DS=75,GS= μa GSS GS(TH) DS(ON) gfs Gae-Body Leakage urren GS=±20,DS= ±100 na Gae Threshold olage DS=GS,D=250μA Drain-Source On-Sae esisance GS=10, D=40A mω Forward Transconducance DS= 10, D=15A S Dynamic Elecrical TJ = 25 (unless oherwise saed) iss oss rss g gs gd npu apaciance pf DS=40,GS=0, Oupu apaciance pf f=1mhz everse Transfer apaciance pf Toal Gae harge n DS=40,D=50A, Gae-Source harge n GS=10 Gae-Drain harge n Swiching haracerisics d(on) r d(off) f Turn-on Delay Time ns Turn-on ise Time DD=40, D=50A, ns Turn-Off Delay Time G=5Ω, ns GS=10 Turn-Off Fall Time ns Source- Drain Diode haracerisics SD SDM SD rr Source-drain oninuous urren A Tc=25 Pulsed Source-drain urren (Body Diode) A Forward on volage, Tj=25, SD=55A,GS= everse ecovery Time, Tj=25 F=40A,DD=25 di/d=100a/μs ns Noes: 1. epeiive aing: Pulse widh limied by maximum juncion emperaure 2. Saring TJ=25, G=25Ω,D=40A,GS=10 opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 Page 2, Toal 5
3 Elecrical characerisics (curves) S80110AT 80/110A N-hannel Advanced Power MOSFET DS, Drain -Source olage () Fig1. Typical Oupu haracerisics Tc - ase Temperaure ( ) Fig2. Maximum Drain urren s.ase Temperaure GS, Gae -Source olage () Fig3. Typical Transfer haracerisics Tj - Juncion Temperaure ( ) Fig4. Normalized On-esisance s. Temperaure don,on esisance (mω) D - Drain urren (A) D, Drain-Source urren (A) Normalized On esisance D, Drain-Source urren (A) D, Drain-Source urren (A) GS, Gae -Source olage () Fig5. Typical On-esisance s. Gae -Source olage opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 DS, Drain -Source olage () Fig6. Maximum Safe Operaing Area Page 3, Toal 5
4 80/110A N-hannel Advanced Power MOSFET SD, Source-Drain olage () Fig7. Typical Source-Drain Diode Forward olage g -Toal Gae harge (n) Fig8. Typical Gae harge s.gae-source olage GS(TH), Gae -Source olage (), apaciance (pf) SD, everse Drain urren (A) GS, Gae-Source olage () Tj - Juncion Temperaure ( ) Fig9. Threshold olage s. Temperaure DS, Drain-Source olage () Fig10. Typical apaciance s.drain-source olage Fig11. Unclamped nducive Tes ircui and waveforms Fig12. Swiching Time Tes ircui and waveforms opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 Page 4, Toal 5
5 80/110A N-hannel Advanced Power MOSFET TO-220AB Package Ouline Daa Dimensions (uni: mm) Symbol Min Typ Max A A A b b c D D DEP E E E ΦP e 2.54 BS e BS H L L L ΦP θ θ Noes: 1. efer o JEDE TO-220 variaion AB 2. Dimension "D" and "E" do NOT include mold flash. Mold flash shall no exceed 0.127mm per side. usomer Service Sales and Service: sales@vgsemi.com anguard Semiconducor O., LTD TEL: (86-755) FAX: (86-755) WEB: opyrigh anguard Semiconducor o., Ld ev. B OT, 2017 Page 5, Toal 5
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and
Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion H037N06L0650P designed by he rench processing echniques o achieve exremely
More informationfunctional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
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UNISONIC TECHNOLOGIES CO., LTD 13NM60 13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
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UNISONIC TECHNOLOGIES CO., LTD UT50N03 50A, 30V N-CHANNEL POWER MOSFET FEATURES * R DS(ON) < 14 mω @ V GS = 10 V, I D = 30 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche
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UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationTO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm
More informationFeatures. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM
Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche
More informationTO-220 TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE
N-channel Enhanced mode TO-220F/TO-220 MOSFET Features High ruggedness Low R DS(ON) (Typ 1.2Ω)@V GS =10V Low Gate Charge (Typ32 nc) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC
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UNISONIC TECHNOLOGIES CO., LTD 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state
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12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,
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MTI2WX75GD Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 75 V 25 = 255 R DSon yp. = 1.1 mw Par number MTI2WX75GD G1 L1+ L2+ T1 T3 T5 G3 G5 L3+ Surface Moun Device S1
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Silicon N-Channel Power MOSFET HPU600R380PC General Description: HPU600R380PC, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve
More informationDisribued by: www.jameco.com 1-800-831-4242 The conen and copyrighs of he aached maerial are he propery of is owner. 16K-Bi CMOS PARALLEL E 2 PROM FEATURES Fas Read Access Times: 200 ns Low Power CMOS
More informationUNISONIC TECHNOLOGIES CO., LTD UT4413
UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
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UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
More informationDevice Marking Device Device Package Reel Size Tape width Quantity EZ TO
N-Channel Trench Power MOSFET General Description The EZ8590 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R DS(ON) is suitable
More informationUNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers
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UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
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UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
More informationMDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ
General Description The MDP193 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP193 is suitable
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UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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