Diode RapidSwitchingEmitterControlledDiode. IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries. Datasheet. IndustrialPowerControl
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1 Diode RapidSwichingEmierConrolledDiode IDP20C65D2 EmierConrolledDiodeRapid2CommonCahodeSeries Daashee IndusrialPowerConrol
2 EmierConrolledDiodeRapid2CommonCahodeSeries RapidSwichingEmierConrolledDiode Feaures: A1 A1 C1 C2 A2 A2 QualifiedaccordingoJEDECforargeapplicaions 650VEmierConrolledechnology Fasrecovery Sofswiching Lowreverserecoverycharge Lowforwardvolageandsableoveremperaure 175 Cjuncionoperaingemperaure Easyparalleling Pbfreeleadplaing;RoHScomplian C Applicaions: BoosdiodeinCCMPFC Packagepindefiniion: Pin1anode(A1) Pin2andbacksidecahode(C) Pin3anode(A2) Key Performance and Package Parameers Type Vrrm If Vf, Tvj=25 C Tvjmax Marking Package IDP20C65D2 650V 2x 10A 1.6V 175 C C20ED2 PGTO2203 2
3 EmierConrolledDiodeRapid2CommonCahodeSeries Table of Conens Descripion Table of Conens Maximum Raings (elecrical parameers per diode) Thermal Resisances (per diode) Elecrical Characerisics Elecrical Characerisics Diagrams Package Drawing Tesing Condiions Revision Hisory Disclaimer
4 EmierConrolledDiodeRapid2CommonCahodeSeries Maximum Raings (elecrical parameers per diode) For opimum lifeime and reliabiliy, Infineon recommends operaing condiions ha do no exceed 80% of he maximum raings saed in his daashee. Parameer Symbol Value Uni Repeiivepeakreversevolage,Tvj 25 C VRRM 650 V Diodeforwardcurren,limiedbyTvjmax TC=25 C TC=100 C IF Diodepulsedcurren,plimiedbyTvjmax IFpuls 30.0 A Diode surge non repeiive forward curren TC=25 C,p=8.3ms,sinehalfwave PowerdissipaionTC=25 C Po 68.0 W Operaing juncion emperaure Tvj C Sorage emperaure Tsg C Soldering emperaure, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 Mouning orque, M3 screw Maximum of mouning processes: 3 IFSM 60.0 A A C M 0.6 Nm Thermal Resisances (per diode) Parameer Symbol Condiions Max. Value Uni Characerisic Diode hermal resisance, 1) juncion case Thermal resisance juncion ambien Rh(jc) 2.20 K/W Rh(ja) 62 K/W Elecrical Characerisics (per diode), a Tvj = 25 C, unless oherwise specified Parameer Symbol Condiions Value min. yp. max. Uni Saic Characerisic Diode forward volage Reverse leakage curren 2) VF IR IF=10.0A Tvj=25 C Tvj=175 C VR=650V Tvj=25 C Tvj=175 C V µa Elecrical Characerisic, a Tvj = 25 C, unless oherwise specified Parameer Symbol Condiions Value min. yp. max. Uni Dynamic Characerisic Inernal emier inducance measured 5mm (0.197 in.) from case LE 7.0 nh 1) Please be aware ha in non sandard load condiions, due o high Rh(jc), Tvj close o Tvjmax can be reached. 2) Reverse leakage curren per diode specified for operaing condiions wih zero volage applied o he oher diode. 4
5 EmierConrolledDiodeRapid2CommonCahodeSeries Swiching Characerisics (per diode), Inducive Load Value Parameer Symbol Condiions Uni min. yp. max. Diode Characerisic, a Tvj = 25 C Diode reverse recovery ime rr Tvj=25 C, 28 ns Diode reverse recovery charge VR=400V, Qrr 0.16 µc IF=10.0A, Diode peak reverse recovery curren Irrm dif/d=1000a/µs, 8.6 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 740 A/µs recoverycurrenduringb swich IKW50N65H5 Diode reverse recovery ime rr Tvj=25 C, 50 ns Diode reverse recovery charge VR=400V, Qrr 0.13 µc IF=10.0A, Diode peak reverse recovery curren Irrm dif/d=350a/µs, 4.3 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 130 A/µs recoverycurrenduringb swich IKW50N65H5 Swiching Characerisics (per diode), Inducive Load Value Parameer Symbol Condiions Uni min. yp. max. Diode Characerisic, a Tvj = 175 C/125 C Diode reverse recovery ime rr Tvj=175 C, 35 ns Diode reverse recovery charge VR=400V, Qrr 0.23 µc IF=10.0A, Diode peak reverse recovery curren Irrm dif/d=1000a/µs, 11.3 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 730 A/µs recoverycurrenduringb swich IKW50N65H5 Diode reverse recovery ime rr Tvj=125 C, 54 ns Diode reverse recovery charge VR=400V, Qrr 0.18 µc IF=10.0A, Diode peak reverse recovery curren Irrm dif/d=350a/µs, 5.0 A Diode peak rae of fall of reverse Lσ=30nH, dirr/d Cσ=40pF, 190 A/µs recoverycurrenduringb swich IKW50N65H5 5
6 EmierConrolledDiodeRapid2CommonCahodeSeries 70 Po,POWERDISSIPATION[W] TC,CASETEMPERATURE[ C] Figure 1. Power dissipaion per diode as a funcion of case emperaure (Tvj 175 C) Zh(jc),TRANSIENTTHERMALRESISTANCE[K/W] D= E6 1E5 1E p,pulsewidth[s] Figure 2. Diode ransien hermal impedance per diode as a funcion of pulse widh (D=p/T) single pulse i: ri[k/w]: E3 τi[s]: 8.0E6 1.2E4 6.7E4 4.5E Tj=25 C, IF = 10A Tj=175 C, IF = 10A 0.30 Tj=25 C, IF = 10A Tj=175 C, IF = 10A rr,reverserecoverytime[ns] Qrr,REVERSERECOVERYCHARGE[µC] dif/d,diodecurrentslope[a/µs] Figure 3. Typical reverse recovery ime as a funcion of diode curren slope (VR=400V) dif/d,diodecurrentslope[a/µs] Figure 4. Typical reverse recovery charge per diode as a funcion of diode curren slope (VR=400V)
7 EmierConrolledDiodeRapid2CommonCahodeSeries 25 Tj=25 C, IF = 10A Tj=175 C, IF = 10A 0 Tj=25 C, IF = 10A Tj=175 C, IF = 10A Irr,REVERSERECOVERYCURRENT[A] dirr/d,diodepeakraeoffallofirr[a/µs] dif/d,diodecurrentslope[a/µs] Figure 5. Typical reverse recovery curren per diode as a funcion of diode curren slope (VR=400V) dif/d,diodecurrentslope[a/µs] Figure 6. Typical diode peak rae of fall of rev. rec. curren per diode as a funcion of diode curren slope (VR=400V) Tj=25 C Tj=175 C IF=5A IF=10A IF=20A IF,FORWARDCURRENT[A] VF,FORWARDVOLTAGE[V] VF,FORWARDVOLTAGE[V] Figure 7. Typical diode forward curren per diode as a funcion of forward volage Tvj,JUNCTIONTEMPERATURE[ C] Figure 8. Typical diode forward volage as a funcion of juncion emperaure 7
8 IDP20C65D2 Emier Conrolled Diode Rapid 2 Common Cahode Series PGTO Rev. 2.1,
9 IDP20C65D2 Emier Conrolled Diode Rapid 2 Common Cahode Series vge() 90% VGE a a 10% VGE b b ic() 90% IC 90% IC 10% IC 10% IC vce() d(off) f d(on) r vge() 90% VGE 10% VGE ic() CC 2% IC vce() 2 E = off V CE 4 x IC x d E 1 1 on = V CE x IC x d 2% VCE Rev. 2.1,
10 IDP20C65D2 Emier Conrolled Diode Rapid 2 Common Cahode Series Revision Hisory IDP20C65D2 Revision: , Rev. 2.1 Previous Revision Revision Dae Subjecs (major changes since las revision) Final daa shee We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: erraum@infineon.com Published by Infineon Technologies AG Munich, Germany München, Germany 2014 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office ( Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 10 Rev. 2.1,
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