<Diode Modules> RM200CY-24S HIGH POWER SWITCHING USE INSULATED TYPE

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Cameron Flynn
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<Diode Modules> dual swich (Cahode Common) Forward curren...... 2 0 0 A Repeiive peak reverse volage V RRM.

.. 1 5 0 C Fla base Type Copper base plae RoHS Direcive complian Recognized under UL1557, File E323585 APPLICATION AC Moor Conrol, Moion/Servo

1 <Diode Modules> dual swich (Cahode Common) Forward curren A Repeiive peak reverse volage V RRM V Maximum juncion emperaure T jmax C Fla base Type Copper base plae RoHS Direcive complian Recognized under UL1557, File E APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION G2 Tolerance oherwise specified Division of Dimension Tolerance Di2 Di1 0.5 o 3 ±0.2 over 3 o 6 ±0.3 over 6 o 30 ±0.5 E1 over 30 o 120 ±0.8 G1 over 120 o 400 ±1.2 Publicaion Dae : April

2 MAXIMUM RATINGS (T j=25 C, unless oherwise specified) Symbol Iem Condiions Raing V RRM Repeiive peak reverse volage V V RSM Non-repeiive peak reverse volage V V R(DC) Reverse DC blocking volage V I DC Forward curren DC (Noe1) 200 SM Surge non-repeiive forward curren 1 cycle of half wave a 60Hz, peak value, T j =25 C sar, V RM =0 V I 2 Curren square ime for fusing w =8.3 ms, T j =25 C sar, Value for one cycle of surge curren A 2 s V isol Isolaion volage Terminals o base plae, RMS, f=60 Hz, AC 1 min 2500 V T j Juncion emperaure ~ +150 T sg Sorage emperaure ~ +125 ELECTRICAL CHARACTERISTICS Symbol Iem Condiions Limis 1000 I RRM Reverse curren V R =V RRM, T j =25 C ma V F Forward volage =200 A, T j =25 C (Noe3) A C V rr Reverse recovery ime V RM =600 V, =200 A, T j =25 C, ns Q rr Reverse recovery charge di/d=-5500 A/μs, Inducive load μc E rr Reverse recovery energy per pulse T j =125 C, Inducive load mj THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions R h(j- c) Thermal resisance Juncion o case, per Diode R h(c- s) Conac hermal resisance (Noe2) Case o hea sink, per 1/2 module, Thermal grease applied (Noe2, 4) Limis K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Iem Condiions Limis M Main erminals M 5 screw N m Mouning orque M s Mouning o hea sink M 6 screw N m m mass g e c Flaness of base plae On he cenerline X, Y (Noe5) μm This produc is complian wih he Resricion of he Use of Cerain Hazardous Subsances in Elecrical and Elecronic Equipmen (RoHS) direcive 2011/65/EU. Noe1. Juncion emperaure (T j ) should no increase beyond T jmax raing. 2. Case emperaure (T C) and hea sink emperaure (T s) are defined on he each surface () of base plae and hea sink jus under he chips. Refer o he figure of chip locaion.the hea sink hermal resisance should measure jus under he chips. 3. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. 4. Typical value is measured by using hermally conducive grease of λ=0.9 W/(m K). 5. Base plae () flaness measuremen poins (X, Y) are as follows of he following figure. +: Convex -: Concave X Y -: Concave +: Convex Publicaion Dae : April

3 CHIP LOCATION (Top view) Dimension in mm, olerance: ±1 mm TEST CIRCUIT Di1/Di2: DIODE G1 G1 E1 V E1 V G2 G2 Di1 V F es circui Di2 TEST CIRCUIT AND WAVEFORMS DUT 0 CM200DY-24A +V R G GE v GE C v R Load + V RM 0 A I rr Q rr =0.5 I rr rr rr 0.5 I rr 0 A 0 V M v AK V RM -V GE E i Reverse recovery characerisics es circui and waveforms Reverse recovery energy es waveforms (Inegral ime insrucion drawing) Publicaion Dae : April

PERFORMANCE CURVES FORWARD CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) R h(j- c)=170 K/kW FORWARD CURRENT IF (A) NORMALIZED TRANSIENT THERMAL RESISTANCE Z h(j- c) FORWARD

4 PERFORMANCE CURVES FORWARD CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) R h(j- c)=170 K/kW FORWARD CURRENT IF (A) NORMALIZED TRANSIENT THERMAL RESISTANCE Z h(j- c) FORWARD VOLTAGE V F (V) TIME (S) REVERSE RECOVERY CHARACTERISTICS V R=600 V, di/d=-5500 A/μs, T j=125 C, INDUCTIVE LOAD, PER PULSE REVERSE RECOVERY CHARACTERISTICS V R=600 V, di/d=-5500 A/μs, T j=25 C, INDUCTIVE LOAD REVERSE RECOVERY ENERGY (mj) rr (ns), I rr (A) FORWARD CURRENT (A) FORWARD CURRENT (A) Publicaion Dae : April

5 Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publicaion Dae : April

< IGBT MODULES > CM100DY-34A HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

< IGBT MODULES > CM100DY-34A HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION CMDY-34A Dual (Half-Bridge) Collecor curren I C...... A Collecor-emier volage CES... 7 Maximum juncion emperaure T jmax... 5 C Fla base Type Copper base plae RoHS Direcive complian UL Recognized under