MX6895BETR. -550V Full Bridge Gate Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications. Ordering Information

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-550V Full Bridge Gae Driver INTEGRATED CIRCUITS DIVISION Feaures Full Bridge Gae Driver Inernal High Volage Level Shif Funcion Negaive 550V Lamp Supply Volage 3V o 12V CMOS Logic Compaible 8V o 12V

1 -550V Full Bridge Gae Driver INTEGRATED CIRCUITS DIVISION Feaures Full Bridge Gae Driver Inernal High Volage Level Shif Funcion Negaive 550V Lamp Supply Volage 3V o 12V CMOS Logic Compaible 8V o 12V Inpu Supply Volage No Exernal Boosrap Capaciors Needed Applicaions Commuaor for High Inensiy Discharge Lamps Vehicle Head Lamps Oudoor/Sree Lighing Mulimedia Projecors Reail Accen Lighing Warehouse Lighing Descripion Buil on IXYS Inegraed Circuis Division s high volage inegraed circui (HVIC) echnology, he combines high-side and low-side N-channel power MOSFET drivers in a full bridge configuraion. The circui is opimally configured o be used as a commuaor for High Inensiy Discharge (HID) lamps. Ordering Informaion Par BE BETR Descripion SOIC-16 Tube (49/Tube) SOIC-16 Tape & Reel (2500/Reel) Pb e3 Funcional Block Diagram and Typical Applicaion Circui V DD 8 V DD +10V 16 GND INA INB 7 6 INA INB CONTROL LOGIC GATE DRIVERS G2 G1 A1 A2 G Ω 250Ω V Z =18V 250Ω M1 IGNITER V Z =18V M2 G Ω M3 V Z =18V M4 9 V Z =18V -550VDC V PP V PP DS--R01 1

2 1. Specificaions Package Pinou Pin Descripion Absolue Maximum Raings Thermal Characerisics Recommended Operaing Condiions DC Elecrical Characerisics AC Elecrical Characerisics Funcional Block Diagram and Truh Table Inpu / Oupu Swiching Waveforms Manufacuring Informaion Moisure Sensiiviy ESD Sensiiviy Reflow Profile Mechanical Dimensions R01

3 1 Specificaions 1.1 Package Pinou 1 - G2 2 - A2 3 - NC 4 - G4 5 - NC 6 - INB 7 - INA 8 - V DD 16 - GND 15 - NC 14 - G A NC 11 - G NC 9 - V PP ESD Warning: ESD (elecrosaic discharge) sensiive device. Alhough he feaures proprieary ESD proecion circuiry, permanen damage may be susained if i is subjeced o high energy elecrosaic discharges. Proper ESD precauions are recommended o avoid performance degradaion or loss of funcionaliy. Noe: The exposed hermal pad of he device package mus be conneced o GND (ground). 1.2 Pin Descripion Pin# Name Descripion 1 G2 High-Side Gae Driver 2 Oupu 2 A2 High-Side Gae Driver 2 Floaing DC Power Reurn 3 NC No Connecion 4 G4 Low-Side Gae Driver 4 Oupu 5 NC No Connecion 6 INB Conrol Inpu for High-Side Driver 2 and Low-Side Driver 3 7 INA Conrol Inpu for High-Side Driver 1 and Low-Side Driver 4 8 V DD Logic Power Supply 9 V PP High-Volage Negaive Lamp Supply 10 NC No Connecion 11 G3 Low-Side Gae Driver 3 Oupu 12 NC No Connecion 13 A1 High-Side Gae Driver 1 Floaing DC Power Reurn 14 G1 High-Side Gae Driver 1 Oupu 15 NC No Connecion 16 GND Ground 1.3 Absolue Maximum Raings Parameer Symbol Min Typ Max Unis Power Supply Volage Range V DD V Lamp Supply Volage, Max V PP V Inpu Volage V INA, V INB V DD +0.3 V Gae Driver Oupu Volage V G1 -V A1 V G2 -V A2 V G V V G4 Power Dissipaion P D W Operaing Juncion Temperaure T J C Inpu Capaciance of Exernal Power Transisors C ISS(LOAD) nf Sorage Temperaure T STG C Absolue maximum elecrical raings are a 25 C. Volages wih respec o GND=0V. Absolue maximum raings are sress raings. Sresses in excess of hese raings can cause permanen damage o he device. Funcional operaion of he device a condiions beyond hose indicaed in he operaional secions of his daa shee is no implied. R01 3

4 1.4 Thermal Characerisics Parameer Symbol Minimum Typical Maximum Uni Thermal Resisance, Juncion-o-Ambien 1 R JA C/W 1 4-layer PCB 1.5 Recommended Operaing Condiions Parameer Symbol Min Typ Max Unis Power Supply Volage V DD V Lamp Supply Volage V PP V Logic Inpu Volage, High V INAH, V INBH 2.5 V DD V DD V Logic Inpu Volage, Low V INAL, V INBL V Ambien Temperaure T A C 1.6 DC Elecrical Characerisics Parameer Condiions Symbol Min Typ Max Unis Power Supply Curren V DD =10V, V PP = -85V, V INA =V DD, V INB =V DD I DD ma Power Supply Curren V DD =10V, V PP = -85V, V INA =V DD, V INB =V DD I PP ma Power Supply Curren V DD =10V, V PP = -85V, V INA =2.5V, V INB =2.5V I DD ma High Inpu Curren V INAH =10V, V INBH =10V I INAH, I INBH A Low Inpu Curren V INAL =0V, V INBL =0V I INAL, I INBL A High-Side Gae Driver Oupu Volage V DD =8V, V PP = -85V, V A1 =V A2 =0V (V G1 -V A1 ), (V G2 -V A2 ) 7-8 V High-Side Gae Driver Oupu Volage V DD =10V, V PP = -85V, V A1 =V A2 =0V (V G1 -V A1 ), (V G2 -V A2 ) 9-10 V Low-Side Gae Driver Oupu Volage V DD =8V o 10V, V PP = -85V (V G3 ), (V G4 ) V High-Side Gae Driver Oupu Source Curren Low-Side Gae Driver Oupu Source Curren V DD =10V, V PP = -85V, V A1 =V A2 =0V, V G1 -V A1 =0V, V G2 -V A2 =0V V DD =8V o 10V, V PP = -85V, V G3 =0V, V G4 =0V (I G1, I G2) ma (I G3, I G4 ) ma 4 R01

5 1.7 AC Elecrical Characerisics Tes Condiions: V DD =10V, V PP =-85V, V A1 =V A2 =0V, T A =25 unless oherwise specified. Parameer Condiions Symbol Minimum Typical Maximum Unis Operaing Frequency - f OP khz High-Side ON V OUT =5V C LOAD =1nF, R S = C ONH LOAD =1nF, R S = s High-Side OFF V OUT =2V C LOAD =1nF, R S = C OFFH LOAD =1nF, R S = s Low-Side ON V OUT =5V C LOAD =1nF, R S = C ONL LOAD =1nF, R S = s Low-Side OFF V OUT =2V C LOAD =1nF, R S = C OFFL LOAD =1nF, R S = s Noes: 1. V OUT is he volage on C LOAD a he defined ime. 2. V OUT = V G1 -V A1, or V OUT = V G2 -V A2, or V OUT = V G3, or V OUT = V G4 Figure 1. AC Tes Circui 8 V DD GND INA INB G2 G1 A1 A R S CL R S V G1 -V A1 V A1 CL V G2 -V A2 V A2 G4 4 R S G3 V PP 11 9 R S CL V G3 CL V G4 V pp Figure 2. AC Swiching Waveforms High Low V G1 -V A1 V G2 -V A2 V G3 V G4 5V C LOAD =1nF 2V ON OFF R01 5

6 2 Funcional Block Diagram and Truh Table V DD G1 A1 INA CONTROL LOGIC G2 A2 INB G3 G4 V PP GND INA INB G1 - A1 G2 - A2 G3 - V PP G4 - V PP LOW LOW LOW LOW LOW LOW HIGH LOW HIGH LOW LOW HIGH LOW HIGH LOW HIGH HIGH LOW HIGH HIGH LOW LOW LOW LOW 6 R01

7 3 Inpu / Oupu Swiching Waveforms V INA High Low V INB High Low V G1 -A1 V G4 DEAD V G2 -A2 V G3 ON OFF R01 7

8 4 Manufacuring Informaion 4.1 Moisure Sensiiviy All plasic encapsulaed semiconducor packages are suscepible o moisure ingression. IXYS Inegraed Circuis Division classified all of is plasic encapsulaed devices for moisure sensiiviy according o he laes version of he join indusry sandard, IPC/JEDEC J-STD-020, in force a he ime of produc evaluaion. We es all of our producs o he maximum condiions se forh in he sandard, and guaranee proper operaion of our devices when handled according o he limiaions and informaion in ha sandard as well as o any limiaions se forh in he informaion or sandards referenced below. Failure o adhere o he warnings or limiaions as esablished by he lised specificaions could resul in reduced produc performance, reducion of operable life, and/or reducion of overall reliabiliy. This produc carries a Moisure Sensiiviy Level (MSL) raing as shown below, and should be handled according o he requiremens of he laes version of he join indusry sandard IPC/JEDEC J-STD-033. Device Moisure Sensiiviy Level (MSL) Raing BE MSL ESD Sensiiviy This produc is ESD Sensiive, and should be handled according o he indusry sandard JESD Reflow Profile This produc has a maximum body emperaure and ime raing as shown below. All oher guidelines of J-STD-020 mus be observed. Device BE Maximum Temperaure x Time 260 C for 30 seconds Pb e3 8 R01

9 4.4 Mechanical Dimensions BE16-Pin SOIC Package Recommended PCB Land Paern PIN min / max (0.020 min / max) 0.18 min / 0.25 max (0.007 min / max) 1.55 (0.061) 0.60 (0.024) 5.89 min / 6.19 max (0.232 min / max) 3.91 ± 0.10 (0.154 ± 0.004) 1.09 ± 0.10 (0.043 ± 0.004) 2.25 (0.089) 5.40 (0.213) PIN min / 1.75 max (0.053 min / max) 9.90 ± 0.10 (0.390 ± 0.004) 0.38 ± 0.10 (0.015 ± 0.004) 1.27 min / 1.42 max (0.050 min / max) 0º -8º ± (0.105 ± 0.005) 1.27 (0.05) 2.75 (0.108) DIMENSIONS mm (inches) ± (0.003 ± 0.002) 0.36 min / 0.48 max (0.014 min / max) 1.27 TYP. (0.05 TYP.) ± (0.085 ± 0.005) BETR Tape & Reel Packaging Dia (13.00 Dia) 0.30 ± 0.05 (0.012 ± 0.002) ø1.55 ± 0.05 (0.061 ± 0.002) See Noe I 2.0 ± 0.1 (0.079 ± 0.004) A See Noe II 4.0 ± 0.1 (0.157 ± 0.004) 1.75 ± 0.1 (0.069 ± 0.004) Top Cover Tape Thickness Max ( Max) B0=10.3 ± 0.1 (0.406 ± 0.004) ø1.6 ± 0.1 (0.063 ± 0.004) R 0.3 TYP. (0.012 TYP.) 7.5 ± 0.1 (0.295 ± 0.004) See Noe I Embossed Carrier K 0 =2.10 ± 0.10 (0.083 ± 0.004) Secion A-A A P 1 =8.0 ± 0.1 (0.315 ± 0.004) A 0 =6.5 ± 0.1 (0.256 ± 0.004) W=16.00 ± 0.3 (0.63 ± 0.012) Embossmen NOTES: (I) Measured from cenerline of sprocke hole o cenerline of pocke. (II) Cumulaive olerance of en (10) sprocke holes is ± 0.20mm. (III) Maerial: Conducive polysyrene. Oher maerial available. Dimensions mm (inches) For addiional informaion please visi IXYS Inegraed Circuis Division makes no represenaions or warranies wih respec o he accuracy or compleeness of he conens of his publicaion and reserves he righ o make changes o specificaions and produc descripions a any ime wihou noice. Neiher circui paen licenses or indemniy are expressed or implied. Excep as se forh in IXYS Inegraed Circuis Division s Sandard Terms and Condiions of Sale, IXYS Inegraed Circuis Division assumes no liabiliy whasoever, and disclaims any express or implied warrany relaing o is producs, including, bu no limied o, he implied warrany of merchanabiliy, finess for a paricular purpose, or infringemen of any inellecual propery righ. The producs described in his documen are no designed, inended, auhorized, or warraned for use as componens in sysems inended for surgical implan ino he body, or in oher applicaions inended o suppor or susain life, or where malfuncion of IXYS Inegraed Circuis Division s produc may resul in direc physical harm, injury, or deah o a person or severe propery or environmenal damage. IXYS Inegraed Circuis Division reserves he righ o disconinue or make changes o is producs a any ime wihou noice. Specificaion: DS--R01 Copyrigh 2012, IXYS Inegraed Circuis Division All righs reserved. Prined in USA. 12/22/2012 R01 9

ORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF

ORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF www.addmek.com DESCRIPTI is a PWM power ED driver IC. The driving curren from few milliamps up o 1.5A. I allows high brighness power ED operaing a high efficiency from 4Vdc o 40Vdc. Up o 200KHz exernal