<IGBT Modules> CM500C2Y-24S HIGH POWER SWITCHING USE INSULATED TYPE

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1 dual pack (Emier common) Collecor curren IC A Collecor-emier volage CES Maximum juncion emperaure T vjmax C Fla base Type Copper base plae Tin plaing ab erminals RoHS Direcive complian Recognized under UL1557, File E APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, Phoovolaic power, Wind power, ec. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm TERMINAL SECTION A INTERNAL CONNECTION Tr1 Tr2 Di1 Di Terminal code 1: C1 2: C2 3: C S1 4: G1 5: E S 6: G2 7: G2 8: E S 9: G1 10: C S2 Tolerance oherwise specified Division of Dimension Tolerance 0.5 o 3 ±0.2 over 3 o 6 ±0.3 over 6 o 30 ±0.5 over 30 o 120 ±0.8 over 120 o 400 ±1.2 over 400 o 1000 ±2.0 over 1000 o 2000 ±3.0 over 2000 o 4000 ±4.0 Publicaion Dae : Sepember

2 MAXIMUM RATINGS (Tvj=25 C, unless oherwise specified) Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 1200 GES Gae-emier volage C-E shor-circuied ± 20 (Noe2, 4) I C DC, TC=108 C 500 Collecor curren (Noe3) I CRM Pulse, Repeiive 1000 P o Toal power dissipaion TC=25 C (Noe2, 4) 2880 W (Noe1) (Noe2) IE DC 500 Emier curren IERM (Noe1) (Noe3) Pulse, Repeiive 1000 i s o l Isolaion volage Terminals o base plae, RMS, f=60 Hz, AC 1 min 4000 T vjm a x Maximum juncion emperaure Insananeous even (overload) 175 T C m a x Maximum case emperaure (Noe4) 125 T vjop Operaing juncion emperaure Coninuous operaion (under swiching) -40 ~ +150 T s g Sorage emperaure ~ +125 ELECTRICAL CHARACTERISTICS (Tvj=25 C, unless oherwise specified) Symbol Iem Condiions Limis Min. Typ. Max. I CES Collecor-emier cu-off curren CE=CES, G-E shor-circuied ma I G ES Gae-emier leakage curren GE=GES, C-E shor-circuied μa G E( h) Gae-emier hreshold volage IC=50 ma, CE= Ca (Terminal) Ca (Chip) Collecor-emier sauraion volage IC=500 A, GE=15, T vj=25 C Refer o he figure of es circui T vj=125 C (Noe5) T vj=150 C IC=500 A, T vj=25 C GE=15, T vj=125 C (Noe5) T vj=150 C C ies Inpu capaciance C o e s Oupu capaciance CE=10, G-E shor-circuied nf C r e s Reverse ransfer capaciance Q G Gae charge CC=600, IC=500 A, GE= μc d ( o n ) Turn-on delay ime CC=600, IC=500 A, GE=±15, r Rise ime d ( o f f ) Turn-off delay ime RG=0 Ω, Inducive load f Fall ime EC (Noe.1) (Terminal) EC (Noe.1) (Chip) Emier-collecor volage IE=500 A, G-E shor-circuied, T vj=25 C Refer o he figure of es circui T vj=125 C (Noe5) T vj=150 C IE=500 A, T vj=25 C G-E shor-circuied, T vj=125 C (Noe5) T vj=150 C rr (Noe1) Reverse recovery ime CC=600, IE=500 A, GE=±15, ns Q rr (Noe1) Reverse recovery charge R G=0 Ω, Inducive load μc E on Turn-on swiching energy per pulse CC=600, I C=I E=500 A, E off Turn-off swiching energy per pulse GE=±15, R G=0 Ω, T vj=150 C, E rr (Noe1) Reverse recovery energy per pulse Inducive load mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, TC=25 C (Noe4) mω r g Inernal gae resisance Per swich Ω A A C C Uni ns mj Publicaion Dae : Sepember

3 THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. R h ( j - c ) Q Juncion o case, per IGBT (Noe4) Thermal resisance (Noe4) R h ( j - c)d Juncion o case, per FWD R h ( c - s ) Conac hermal resisance MECHANICAL CHARACTERISTICS Case o hea sink, per 1 module, (Noe4, 6) Thermal grease applied Symbol Iem Condiions Uni K/kW K/kW Limis Min. Typ. Max. M Mouning orque Main erminals M 6 screw N m M s Mouning orque Mouning o hea sink M 5 screw N m d s d a Creepage disance Clearance Terminal o erminal Terminal o base plae Terminal o erminal Terminal o base plae e c Flaness of base plae On he cenerline X, Y (Noe7) μm m mass g *: This produc is complian wih he Resricion of he Use of Cerain Hazardous Subsances in Elecrical and Elecronic Equipmen (RoHS) direcive 2011/65/EU. Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free-wheeling diode (FWD). 2. Juncion emperaure (T vj) should no exceed T vjm a x raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T vj) dose no exceed T vjm a x raing. 4. Case emperaure (TC) and hea sink emperaure (T S ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. Refer o he figure of es circui. 6. Typical value is measured by using hermally conducive grease of λ=0.9 W/(m K)/D(C-S)=100 μm. 7. The base plae (mouning side) flaness measuremen poins (X, Y) are shown in he following figure. Uni mm mm +:Convex -:Concave Y X Mouning side Mouning side -:Concave Mouning side +:Convex 8. Use he following screws when mouning he prined circui board (PCB) on he sandoffs. The lengh of he screw depends on he PCB hickness (1.0). Type Size Tighening orque Recommended ighening mehod (1) PT K ± N m (2) PT K ± N m by handwork (equivalen o 30 r/min (3) DELTA PT ± N m by mechanical screw driver) (4) DELTA PT ± N m ~ 600 r/min (by mechanical screw driver) (5) B1 apping screw φ or φ ± N m Publicaion Dae : Sepember

4 RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. CC (DC) Supply volage Applied across C1-E2 erminals GEon Gae (-emier drive) volage Applied across G1-/ G2- erminals RG Exernal gae resisance Per swich 0-15 Ω Uni CHIP LOCATION (Top view) Dimension in mm, olerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWD Publicaion Dae : Sepember

5 TEST CIRCUIT AND WAEFORMS v GE ~ 90 % - GE i E Load + CC 0 0 i E Q rr =0.5 I rr rr Anoher module i C C Tr1 Di1 E Tr2 Di2 C i C ~ 90 % 0 A I E rr Cs G R G 0 vce + GE - GE G Cs - GE 0 A d ( o n ) r d ( o ff ) f 10% I rr 0.5 I rr Swiching characerisics es circui and waveforms rr, Qrr characerisics es waveform IEM vce ICM CC ic ic ic CC CC ICM ICM vce vce ie vec CC 0 A CC 0.1 ICM 0.1 CC 0.1 CC 0 0 i i 0.02 ICM 0.02 ICM 0 i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy FWD Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT GE=15 G-E shor circuied Cs1 G1 G2 Cs2 C1 C2 IC G-E shor circuied GE=15 Cs1 G1 G2 Cs2 C1 C2 IC G-E shor circuied GE=15 Cs1 G1 G2 Cs2 C1 C2 IE GE=15 G-E shor circuied Cs1 G1 G2 Cs2 C1 C2 IE Tr1 Tr2 Di1 Di2 Ca characerisics es circui EC characerisics es circui Publicaion Dae : Sepember

6 PERFORMANCE CURES OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS T vj=25 C (Chip) GE=15 (Chip) COLLECTOR CURRENT IC (A) GE= COLLECTOR-EMITTER SATURATION OLTAGE Ca () T vj=150 C T vj=125 C T vj=25 C COLLECTOR-EMITTER OLTAGE CE () COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER OLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS T vj=25 C (Chip) G-E shor-circuied (Chip) COLLECTOR-EMITTER OLTAGE CE () I C=1000 A I C=500 A I C=250 A EMITTER CURRENT IE (A) T vj=25 C T vj=125 C T vj=150 C GATE-EMITTER OLTAGE GE () EMITTER-COLLECTOR OLTAGE EC () Publicaion Dae : Sepember

7 PERFORMANCE CURES HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS CC=600, GE=±15, R G=0 Ω, INDUCTIE LOAD CC=600, GE=±15, I C=500 A, INDUCTIE LOAD : T vj=150 C, : T vj=125 C : T vj=150 C, : T vj=125 C d ( o ff) d ( o n ) SWITCHING TIME (ns) d ( o ff) d ( o n ) SWITCHING TIME (ns) f f r r COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS CC=600, GE=±15, R G=0 Ω, CC=600, GE=±15, I C/I E=500 A, INDUCTIE LOAD, PER PULSE INDUCTIE LOAD, PER PULSE : T vj=150 C, : T vj=125 C : T vj=150 C, : T vj=125 C SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E rr E o f f SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E o f f E rr COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) EXTERNAL GATE RESISTANCE R G (Ω) Publicaion Dae : Sepember

8 PERFORMANCE CURES CAPACITANCE CHARACTERISTICS FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC=600, GE=±15, R G=0 Ω, INDUCTIE LOAD G-E shor-circuied, T vj=25 C : T vj=150 C, : T vj=125 C C i e s I rr CAPACITANCE (nf) C o e s rr (ns), I rr (A) rr C r e s COLLECTOR-EMITTER OLTAGE CE () EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) CC=600, I C=500 A, T vj=25 C Single pulse, T C=25 C R h ( j - c ) Q=52 K/kW, R h ( j - c)d=80 K/kW GATE-EMITTER OLTAGE GE () NORMALIZED TRANSIENT THERMAL RESISTANCE Z h ( j - c) GATE CHARGE Q G (nc) TIME (S) Noe: The characerisics curves are presened for reference only and no guaraneed by producion es, unless oherwise noed. Publicaion Dae : Sepember

9 Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. Generally he lised company name and he brand name are he rademark of he companies or regisered rademarks MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED. Publicaion Dae : Sepember

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