BAV70WT1G SBAV70WT1G Dual Switching Diode Common Cathode
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1 BA70WT1G, SBA70WT1G Dual Swiching Diode Common Cahode Feaures AECQ101 Qualified and PPAP Capable S Prefix for Auomoive and Oher Applicaions Requiring Unique Sie and Conrol Change Requiremens These Devices are PbFree, Halogen Free/BFR Free and are RoHS Complian* MAXIMUM RATINGS () Raing Symbol Max Uni Reverse olage R 70 Forward Curren I F 200 ma Peak Forward Surge Curren I FM(surge) 500 ma Sresses exceeding Maximum Raings may damage he device. Maximum Raings are sress raings only. Funcional operaion above he Recommended Operaing Condiions is no implied. Exended exposure o sresses above he Recommended Operaing Condiions may affec device reliabiliy. THERMAL CHARACTERISTICS Characerisic Symbol Max Uni Toal Device Dissipaion FR5 Board (Noe 1) Derae above 25 C Thermal Resisance, JuncionoAmbien Toal Device Dissipaion Alumina Subsrae (Noe 2) Derae above 25 C Thermal Resisance, JuncionoAmbien P D mw mw/ C R JA 625 C/W P D mw mw/ C R JA 417 C/W Juncion and Sorage Temperaure T J, T sg 55 o FR5 = in. 2. Alumina = in. 99.5% alumina. C CASE 419 STYLE 5 MARKING DIAGRAM A4 M 1 2 ORDERING INFORMATION Device Package Shipping BA70WT1G CATHODE (PbFree) (PbFree) ANODE 1 2 ANODE A4 = Specific Device Code M = Dae Code = PbFree Package (Noe: Microdo may be in eiher locaion) SBA70WT1G,000 / Tape & Reel,000 / Tape & Reel For informaion on ape and reel specificaions, including par orienaion and ape sizes, please refer o our Tape and Reel Packaging Specificaions Brochure, BRD8011/D. *For addiional informaion on our PbFree sraegy and soldering deails, please download he ON Semiconducor Soldering and Mouning Techniques Reference Manual, SOLDERRM/D. 1 Semiconducor Componens Indusries, LLC, 2011 November, 2011 Rev. 6 Publicaion Order Number: BA70WT1/D
2 ELECTRICAL CHARACTERISTICS ( unless oherwise noed) Characerisic Symbol Min Max Uni Reverse Breakdown olage (I (BR) = 100 A) (BR) 70 Reverse olage Leakage Curren (Noe ) ( R = 70 ) ( R = 50 ) I R A na Forward olage (I F = ma) (I F = 10 ma) (I F = 50 ma) (I F = 150 ma) F m Diode Capaciance ( R = 0, f = MHz) Reverse Recovery Time (I F = I R = 10 ma, R L = 100, I R(REC) = ma) (Figure 1) Forward Recovery olage (I F = 10 ma, r = 20 ns) (Figure 2). For each individual diode while he second diode is unbiased. C D 1.5 rr 6.0 RF 1.75 pf ns 2
3 BA70 R S = 50 I F SAMPLING OSCILLOSCOPE R L = 50 r p 10% +I F rr OUTPUT PULSE R 90% INPUT PULSE Figure 1. Recovery Time Equivalen Tes Circui 10% OF R K 450 R S = 50 BA70 SAMPLING OSCILLOSCOPE R L = 50 I 90% FR 10% r p INPUT PULSE Figure 2. OUTPUT PULSE
4 T A = 150 C IF, FORWARD CURRENT (ma) 10 T A = 85 C T A = - 40 C I R, REERSE CURRENT ( A) T A = 125 C T A = 85 C T A = 55 C F, FORWARD OLTAGE (OLTS) R, REERSE OLTAGE (OLTS) Figure. Forward olage Figure 4. Leakage Curren CD, DIODE CAPACITANCE (pf) R, REERSE OLTAGE (OLTS) Figure 5. Capaciance 4
5 PACKAGE DIMENSIONS SC70 () CASE ISSUE N D e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH (0.002) H E 1 2 e A1 E A b A2 L c MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A A REF REF b c D E e e BSC BSC L H E STYLE 5: PIN 1. ANODE 2. ANODE. CATHODE SOLDERING FOOTPRINT* SCALE 10:1 mm inches *For addiional informaion on our PbFree sraegy and soldering deails, please download he ON Semiconducor Soldering and Mouning Techniques Reference Manual, SOLDERRM/D. ON Semiconducor and are regisered rademarks of Semiconducor Componens Indusries, LLC (SCILLC). SCILLC reserves he righ o make changes wihou furher noice o any producs herein. SCILLC makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does SCILLC assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Typical parameers which may be provided in SCILLC daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. SCILLC does no convey any license under is paen righs nor he righs of ohers. SCILLC producs are no designed, inended, or auhorized for use as componens in sysems inended for surgical implan ino he body, or oher applicaions inended o suppor or susain life, or for any oher applicaion in which he failure of he SCILLC produc could creae a siuaion where personal injury or deah may occur. Should Buyer purchase or use SCILLC producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold SCILLC and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha SCILLC was negligen regarding he design or manufacure of he par. SCILLC is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Lieraure Disribuion Cener for ON Semiconducor P.O. Box 516, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderli@onsemi.com N. American Technical Suppor: Toll Free USA/Canada Europe, Middle Eas and Africa Technical Suppor: Phone: Japan Cusomer Focus Cener Phone: ON Semiconducor Websie: Order Lieraure: hp:// For addiional informaion, please conac your local Sales Represenaive BA70WT1/D
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NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors
EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBT Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
MMQA Quad Common Anode Series. SC-74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
MMUN2111LT1G, SMMUN21xxLT3G. NSVMMUN2111LT1G Series. Bias Resistor Transistors
MMUNLTG, SMMUNLTG, NSVMMUNLTG Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace
1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series. 1.5 Watt Plastic Surface Mount Zener Voltage Regulators
59xxBT3 Series, SZ59xxBT3G Series.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of.5 Watt Zener Diodes offers the following advantages. Features Standard Zener Breakdown
MMQA, SZMMQA Quad Common Anode Series. SC-74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA, SZMMQA Quad Common Anode Series SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor
NSS66MZ, NSV66MZTG, NSV66MZT3G 6 V, 6. A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m
NSS66MZ 6 V, 6. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS42LTG, NSV42LTG 4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
SMF5.0AT1G Series, SZSMF5.0AT1G Series. 200 W Transient Voltage Suppressor SOD-123 Flat Lead Package
SMF5.AT1G Series, SZSMF5.AT1G Series 2 W Transient Voltage Suppressor SOD-123 Flat Lead Package The SMF5.AT1G Series is designed to protect voltage sensitive components from high voltage, high energy transients.
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
DATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes daa of April 1996 File under Discree Semiconducors, SC01 1996 Sep 03 FEATURES Hermeically sealed leaded glass SOD27 (DO-35) package High swiching speed:
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other
FSUSB63 3:1 High-Speed USB 2.0 Switch / Multiplexer
FSUSB63 3:1 High-Speed USB 2.0 Swich / Muliplexer Feaures Sw ich Type 3:1 USB Sw ich USB USB 2.0 High-Speed & Full-Speed Complian Break-Before-Make Time 126µs RON 6Ω Typical C ON 6pF Typical Bandw idh
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor