functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

Transcription

1 H037N06L Feaures Low On-Resisance Fas Swiching 100% Avalanche Tesed Repeiive Avalanche Allowed up o Tjmax Lead-Free, RoHS omplian Descripion H037N06L designed by he rench processing echniques o achieve exremely low on-resisance. Addiional feaures of his design are a 175 juncion operaing emperaure, fas swiching speed and improved repeiive avalanche raing. These feaures combine o make his design an exremely efficien and reliable device for use in Power applicaions and a wide variey of oher supply applicaions. Absolue Maximum Raings Sresses beyond hose lised under Absolue Maximum Raings may cause permanen damage o he device. These are sress raings only;and funcional operaion of he device a hese or any oher condiion beyond hose indicaed in he specificaions is no implied. Exposure o absolue-maximum-raed condiions for exended periods may affec device reliabiliy. The hermal resisance and power dissipaion raings are measured under board mouned and sill air condiions. Ambien emperaure (TA) is 25, unless oherwise specified. Symbol Parameer Raing Uni ommon Raings (T=25 Unless Oherwise Noed) DS 60 R DS(on),yp@ 28 mω R DS(on),yp@GS= mω I D 30 A TO-252 GS Gae-Source olage ± Drain-Source Breakdown olage 60 (BR)DSS TJ Maximum Juncion Temperaure 175 TSTG Sorage Temperaure Range -55 o 175 IS Diode oninuous Forward urren T =25 30 A Mouned on Large Hea Sink IDM Pulse Drain urren Tesed 1 T = A I oninuous Drain curren@ T =25 30 A D PD Maximum Power Dissipaion T =25 35 W R J Thermal Resisance-Juncion o ase 3 /W R JA Thermal Resisance Juncion-Ambien 75 /W Drain-Source Avalanche Raings EAS Avalanche Energy, Single Pulsed 2 38 mj 1

2 H037N06L Symbol Parameer ondiion Min. Typ. Max. Uni Saic Elecrical TJ = 25 (unless oherwise saed) Drain-Source Breakdown olage GS=0 ID=250μA (BR)DSS I DSS Zero Gae olage Drain urren(tc=125 ) DS=60,GS= μa Zero Gae olage Drain urren(tc=25 ) DS=60,GS= μa I Gae-Body Leakage urren GS=±16,DS= ±10 μa GSS Gae Threshold olage DS=GS,ID=250μA GS(TH) R Drain-Source On-Sae Resisance3, ID=16A mω DS(ON) R Drain-Source On-Sae Resisance3 GS=5, ID=8A mω DS(ON) gfs Forward Transconducance DS= 25, ID=18A S Dynamic Elecrical TJ = 25 (unless oherwise saed) Inpu apaciance pf iss DS=30,GS=0, Oupu apaciance pf oss f=1mhz rss Reverse Transfer apaciance pf Toal Gae harge n g DS=30,ID=18A, Gae-Source harge n gs gd Gae-Drain harge Swiching haracerisics n Turn-on Delay Time ns d(on) DD=30, Turn-on Rise Time ID=1A, ns r Turn-Off Delay Time RG=6.8Ω, d(off) ns Turn-Off Fall Time ns f Source- Drain Diode haracerisics@ TJ = 25 (unless oherwise saed) I Source-drain curren(body Diode) Tc= A SD Forward on volage ISD=20A,GS= SD Reverse Recovery Time Tj=25,Isd=20A, ns rr GS=0 Reverse Recovery harge 85 n di/d=100a/μs rr NOTE: 1 Repeiive raing; pulse widh limied by max. juncion emperaure. 2 Limied by TJmax, saring TJ = 25, L = 0.3mH,RG = 25Ω, IAS = 16A, GS =10. Par no recommended for use above his value 3 Pulse widh 300μs; duy cycle 2%. 2

3 H037N06L Typical haracerisics DS, Drain -Source olage () Fig1. Typical Oupu haracerisics Tc - ase Temperaure ( ) Fig2. Maximum Drain urren s.ase Temperaure ID, Drain-Source urren (A) ID, Drain-Source urren (A) Normalized On Resisance ID, Drain-Source urren (A) ID=16A GS, Gae -Source olage () Fig3. Typical Transfer haracerisics Tj - Juncion Temperaure ( ) Fig4. Normalized On-Resisance s. Temperaure Gfs, Forward Transconducance (S) Tj=25 ID - Drain urren (A) ISD, Source-Drain olage (A) Fig5.Typical Forward Transconducance s. Drain urren DS, Drain -Source olage () Fig6. Maximum Safe Operaing Area 3

4 H037N06L ISD, Reverse Drain urren (A) GS, Gae-Source olage () SD, Source-Drain olage () Fig7. Typical Source-Drain Diode Forward olage g -Toal Gae harge (n) Fig8. Typical Gae harge s.gae-source olage GS(TH), Gae -Source olage (), apaciance (pf) Tj - Juncion Temperaure ( ) Fig9. Threshold olage s. Temperaure DS, Drain-Source olage () Fig10. Typical apaciance s.drain-source olage Fig11. Unclamped Inducive Tes ircui and waveforms Fig12. Swiching Time Tes ircui and waveforms 4

5 H037N06L TO-252 Mechanical Daa TO-252 Dimensions (Uni:mm) Symbol Min Nom Max Symbol Min Nom Max A F A F A L B L1 2.9REF L L D θ E TO-251 Mechanical Daa TO-251 Dimensions (Uni:mm) Symbol Min Nom Max Symbol Min Nom Max A F A F B L L L D θ E