NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor

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1 March 996 NS352P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize on-sae resisance. These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen, porable elecronics, and oher baery powered circuis where fas high-side swiching, and low in-line power loss are needed in a very small ouline surface moun package. Feaures -.85A, V. R S(ON) V GS =.5V. Proprieary package design using copper lead frame for superior hermal and elecrical capabiliies. High densiy cell design for exremely low R S(ON). Excepional on-resisance and maximum C curren capabiliy. Compac indusry sandard SOT3 surface moun package. G S Absolue Maximum Raings T A = 25 C unless oherwise noed Symbol Parameer NS352P Unis V SS rain-source Volage V V GSS Gae-Source Volage - Coninuous ±2 V I Maximum rain Curren - Coninuous (Noe a) ±.85 A - Pulsed ± P Maximum Power issipaion (Noe a).5 W (Noe b).46,t STG Operaing and Sorage Temperaure Range 5 o 5 C THERMAL CHARACTERISTICS R θja Thermal Resisance, Juncion-o-Ambien 25 C/W (Noe a) R θjc Thermal Resisance, Juncion-o-Case (Noe ) 75 C/W 997 Fairchild Semiconducor Corporaion NS352P Rev. F

2 Elecrical Characerisics (T A = 25 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V GS = V, I = 5 µa V I SS Zero Gae Volage rain Curren V S = -6 V, V GS = V µa =25 C µa I GSSF Gae - Body Leakage, Forward V GS = 2 V, V S = V na I GSSR Gae - Body Leakage, Reverse V GS = V, V S = V - na ON CHARACTERISTICS (Noe 2) V GS(h) Gae Threshold Volage V S = V GS, I = 5 µa V =25 C R S(ON) Saic rain-source On-Resisance V GS =.5 V, I = -.85 A.46.5 Ω =25 C.59.7 V GS = - V, I = - A.35 I (ON) On-Sae rain Curren V GS =.5 V, V S = V A g FS Forward Transconducance V S = V, I = -.85 A.5 S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = - V, V GS = V, 25 pf C oss Oupu Capaciance f =. MHz 4 pf C rss Reverse Transfer Capaciance 45 pf SWITCHING CHARACTERISTICS (Noe 2) d(on) Turn - On elay Time V = - V, I = - A, 8 5 ns r Turn - On Rise Time V GS = - V, R GEN = 5 Ω 9 3 ns d(off) Turn - Off elay Time 64 9 ns f Turn - Off Fall Time 6 9 ns Q g Toal Gae Charge V S = - V, I = -.85 A, nc Q gs Gae-Source Charge V GS = V nc Q gd Gae-rain Charge 2 nc NS352P Rev. F

3 Elecrical Characerisics (T A = 25 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Coninuous rain-source iode Forward Curren -.6 A I SM Maximum Pulsed rain-source iode Forward Curren A V S rain-source iode Forward Volage V GS = V, I S = -.85 A (Noe 2) V Noes:. R θja is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is deermined by he user's board design. P () = T A = T A = RθJ A() RθJ C+RθCA() I 2 () R S(ON ) TJ Typical R θja using he board layous shown below on 4.5"x5" FR PCB in a sill air environmen: a. 25 o C/W when mouned on a.2 in 2 pad of 2oz cpper. b. 27 o C/W when mouned on a. in 2 pad of 2oz cpper. a b Scale : on leer size paper 2. Pulse Tes: Pulse Widh < 3µs, uy Cycle < 2.%. NS352P Rev. F

4 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) - V = -V GS V S, RAIN-SOURCE VOLTAGE (V)..5. R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS =.5 V I, RAIN CURRENT (A) Figure. On-Region Characerisics Figure 2. On-Resisance Variaion wih rain Curren and Gae Volage R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE (OHMS) I = -.85A V GS =.5V , JUNCTION TEMPERATURE ( C) R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS =.5V - T = 25 C J 25 C 5 C I, RAIN CURRENT (A) Figure 3. On-Resisance Variaion wih Temperaure Figure 4. On-Resisance Variaion wih rain Curren and Temperaure I, RAIN CURRENT (A) - - V = -V S T = 5 C J V, GATE TO SOURCE VOLTAGE (V) GS V h, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE (V) V S = VGS I = 5µA , JUNCTION TEMPERATURE ( C) Figure 5. Transfer Characerisics Figure 6. Gae Threshold Variaion wih Temperaure NS352P Rev. F

5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE (V) I = 5µA , JUNCTION TEMPERATURE ( C) -I, REVERSE RAIN CURRENT (A) V GS = V T = 25 C J 25 C 5 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 7. Breakdown Volage Variaion wih Temperaure Figure 8. Body iode Forward Volage Variaion wih Source Curren and Temperaure 5 - CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss V, GATE-SOURCE VOLTAGE (V) GS -8-6 I = -85mA V = V S V, RAIN TO SOURCE VOLTAGE (V) S Q g, GATE CHARGE (nc) Figure 9. Capaciance Characerisics Figure. Gae Charge Characerisics V IN V R L V OUT d(on) on r 9% d(off) off 9% f V GS V OUT % R GEN G UT % 9% S V IN 5% 5% % PULSE WITH INVERTE Figure. Swiching Tes Circui Figure 2. Swiching Waveforms NS352P Rev. F

6 Typical Elecrical Characerisics (coninued) g FS, TRANSCONUCTANCE (SIEMENS) V S= V - T = 5 C J 25 C I, RAIN CURRENT (A) 25 C -I, RAIN CURRENT (A) RS(ON) LIMIT V GS = -V SINGLE PULSE T = 25 C A s s C ms ms - V, RAIN-SOURCE VOLTAGE (V) S us ms Figure 3. Transconducance Variaion wih rain Curren and Temperaure Figure 4. Maximum Safe Operaing Area.5 =.5 r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE R θja () = r() * R θja R = 25 C/W θja.2.2 P(pk)...5 Single Pulse 2 - T = P * R () A θja.2 uy Cycle, = / , TIME (sec) Figure 5. Transien Thermal Response Curve Noe : Characerizaion performed using he condiions described in noe c. Transien hermal response will change depending on he circui board design. NS352P Rev. F

7 TRAEMARKS The following are regisered and unregisered rademarks Fairchild Semiconducor owns or is auhorized o use and is no inended o be an exhausive lis of all such rademarks. ACEx Boomless CoolFET CROSSVOLT ensetrench OME EcoSPARK E 2 CMOS TM EnSigna TM FACT FACT Quie Series STAR*POWER is used under license ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life suppor devices or sysems are devices or sysems which, (a) are inended for surgical implan ino he body, or (b) suppor or susain life, or (c) whose failure o perform when properly used in accordance wih insrucions for use provided in he labeling, can be reasonably expeced o resul in significan injury o he user. PROUCT STATUS EFINITIONS efiniion of Terms FAST FASTr FRFET GlobalOpoisolaor GTO HiSeC ISOPLANAR LileFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Opoelecronics Quie Series SILENT SWITCHER SMART START STAR*POWER Sealh SuperSOT SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslaion UHC UlraFET 2. A criical componen is any componen of a life suppor device or sysem whose failure o perform can be reasonably expeced o cause he failure of he life suppor device or sysem, or o affec is safey or effeciveness. aashee Idenificaion Produc Saus efiniion VCX Advance Informaion Preliminary No Idenificaion Needed Formaive or In esign Firs Producion Full Producion This daashee conains he design specificaions for produc developmen. Specificaions may change in any manner wihou noice. This daashee conains preliminary daa, and supplemenary daa will be published a a laer dae. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. This daashee conains final specificaions. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. Obsolee No In Producion This daashee conains specificaions on a produc ha has been disconinued by Fairchild semiconducor. The daashee is prined for reference informaion only. Rev. H4

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