Not Recommend. for New Design < IGBT MODULES > CM1400DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

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1 dual swich (Half-Bridge) Collecor curren I C A Collecor-emier volage CES Maximum juncion emperaure T jmax C Fla base Type Copper base plae (non-plaing) RoHS Direcive complian Recognized under UL1557, File E APPLICATION Wind power, Phoovolaic (Solar) power, AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION C2 (Cs2) INTERNAL CONNECTION Di2 Tr2 Di1 Tr1 () E1 () Dimension in mm Tolerance oherwise specified Division of Dimension.5 o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±.5 over 3 o 12 ±.8 over 12 o 4 ±1.2 Tolerance () Publicaion Dae : February 214 1

2 MAXIMUM RATINGS (T j=25 C, unless oherwise specified) Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 12 GES Gae-emier volage C-E shor-circuied ± 2 I C DC, T C =94 C (Noe2, 4) 14 Collecor curren I CRM Pulse, Repeiive (Noe3) 28 P o Toal power dissipaion T C =25 C (Noe2, 4) 8925 W (Noe1) I E DC (Noe2) 14 Emier curren I (Noe1) ERM Pulse, Repeiive (Noe3) 28 isol Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC 1 min 25 T j Juncion emperaure - -4 ~ +15 T sg Sorage emperaure (Noe7) ELECTRICAL CHARACTERISTICS (T j=25 C, unless oherwise specified) Symbol Iem Condiions Limis -4 ~ +125 Min. Typ. Max. I CES Collecor-emier cu-off curren CE = CES, G-E shor-circuied ma I GES Gae-emier leakage curren GE = GES, C-E shor-circuied μa GE(h) Gae-emier hreshold volage I C =14 ma, CE = CEsa C ies Collecor-emier sauraion volage Inpu capaciance I C =14 A, GE =15 (Noe5) T j =25 C Refer o he figure of es circui T j =125 C C oes Oupu capaciance CE =1, G-E shor-circuied C res Reverse ransfer capaciance Q G Gae charge CC =6, I C =14 A, GE = nc d(on) Turn-on delay ime CC =6, I C =14 A, GE =±15, r Rise ime d(off) Turn-off delay ime R G =.22 Ω, Inducive load f Fall ime EC (Noe1) rr (Noe1) Emier-collecor volage I E =14 A, G-E shor-circuied, Refer o he figure of es circui (Noe5) T j =25 C T j =125 C Reverse recovery ime CC =6, I E =14 A, GE =±15, ns Q rr (Noe1) Reverse recovery charge R G=.22 Ω, Inducive load μc E on Turn-on swiching energy per pulse CC=6, I C=I E=14 A, E off Turn-off swiching energy per pulse GE=±15, R G=.22 Ω, T j =15 C, E rr (Noe1) Reverse recovery energy per pulse Inducive load mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, T C =25 C (Noe4) A A C Uni nf ns mj mω r g Inernal gae resisance Per swich Ω Publicaion Dae : February 214 2

3 THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. R h(j-c)q Juncion o case, per Inverer IGBT (Noe4) Thermal resisance R h(j-c)d Juncion o case, per Inverer DIODE (Noe4) R h(c- s ) Conac hermal resisance MECHANICAL CHARACTERISTICS Case o hea sink, per 1/2 module, Thermal grease applied (Noe4, 6) Symbol Iem Condiions Uni K/kW K/kW Limis Min. Typ. Max. M Main erminals M 6 screw N m Mouning orque M s Mouning o hea sink M 6 screw N m d s d a Creepage disance Clearance Terminal o erminal Terminal o base plae Terminal o erminal Terminal o base plae m mass g e c Flaness of base plae On he cenerline X, Y1, Y2 (Noe8) μm Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free wheeling diode (DIODE). 2. Juncion emperaure (T j ) should no increase beyond T jmax raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T j ) dose no exceed T jmax raing. 4. Case emperaure (T C) and hea sink emperaure (T s) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. The hea sink hermal resisance should measure jus under he chips. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. Refer o he figure of es circui. 6. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 7: The operaion emperaure is resrained by he permission emperaure of female connecor housing. 8. Base plae (mouning side) flaness measuremen poins (X, Y1 and Y2) are as follows of he following figure. +: 凸 mouning side Label side mouning side -: 凹 39 mm 39 mm Y1 X mouning side -: 凹 +: 凸 Y2 9. The company name and produc names herein are he rademarks and regisered rademarks of he respecive companies. *. DC curren raing is limied by power erminals. Uni mm mm Publicaion Dae : February 214 3

4 RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. CC (DC) Supply volage Applied across - erminals GEon Gae (-emier drive) volage Applied across -/- erminals R G Exernal gae resisance Per swich Ω CHIP LOCATION (Top view) Tr1/Tr2: IGBT, Di1/Di2: DIODE Uni Dimension in mm, olerance: ±1 mm Publicaion Dae : February 214 4

5 TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % + GE - GE v CE.1 I CM - GE R G I CM vce vge Cs2 Load i C + CC A i C d(on) ~ r d(off) Swiching characerisics es circui and waveforms i CC.1 CC i C i C.1 CC CC i I CM v CE.2 I CM 9 % f 1% A i E i E A I E I rr Q rr =.5 I rr rr rr.5 I rr rr, Q rr es waveform IGBT Turn-on swiching energy IGBT Turn-off swiching energy DIODE Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT GE=15 Shorcircuied Cs2 I C Shorcircuied GE=15 Cs2 I C Shorcircuied Shor- Cs2 circuied I E I EM Shorcircuied Shorcircuied Tr1 Tr2 Di1 Di2 CEsa es circui EC es circui i Cs2 v EC CC I E Publicaion Dae : February 214 5

6 PERFORMANCE CURES COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION OLTAGE CEsa () GE=2 OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS T j=25 C (Chip) GE=15 (Chip) COLLECTOR-EMITTER OLTAGE CE () COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CEsa () COLLECTOR CURRENT I C (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS T j=25 C (Chip) G-E shor-circuied (Chip) I C=28 A I C=14 A I C=56 A GATE-EMITTER OLTAGE GE () EMITTER CURRENT IE (A) T j=125 C T j=125 C T j=25 C T j=25 C EMITTER-COLLECTOR OLTAGE EC () Publicaion Dae : February 214 6

7 PERFORMANCE CURES SWITCHING TIME (ns) SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±15, R G=.22 Ω, T j=125 C, INDUCTIE LOAD f r d(off) COLLECTOR CURRENT I C (A) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±15, R G=.22 Ω, T j=125 C, INDUCTIE LOAD, PER PULSE E on d(on) E off E rr COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) SWITCHING TIME (ns) SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, I C=14 A, GE=±15, T j=125 C, INDUCTIE LOAD d(on ) EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, I C/I E=14 A, GE=±15, T j=125 C, INDUCTIE LOAD, PER PULSE d(off) EXTERNAL GATE RESISTANCE R G (Ω) r f E on E off E rr Publicaion Dae : February 214 7

8 PERFORMANCE CURES CAPACITANCE (nf) GATE-EMITTER OLTAGE GE () CAPACITANCE CHARACTERISTICS G-E shor-circuied, T j=25 C COLLECTOR-EMITTER OLTAGE CE () GATE CHARGE CHARACTERISTICS I C=14 A, T j=25 C CC=4 GATE CHARGE Q G (nc) C ies C oes C res CC= rr (ns), I rr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z h(j- c) FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC=6, GE=±15, R G=.22 Ω, T j=25 C, INDUCTIE LOAD EMITTER CURRENT I E (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single pulse, T C=25 C R h(j-c)q=14 K/kW, R h(j-c)d=23 K/kW TIME (S) I rr rr Publicaion Dae : February 214 8

9 Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED. Publicaion Dae : February 214 9

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