Not Recommend. for New Design < IGBT MODULES > CM1400DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "Not Recommend. for New Design < IGBT MODULES > CM1400DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION"

Transcription

1 dual swich (Half-Bridge) Collecor curren I C A Collecor-emier volage CES Maximum juncion emperaure T jmax C Fla base Type Copper base plae (non-plaing) RoHS Direcive complian Recognized under UL1557, File E APPLICATION Wind power, Phoovolaic (Solar) power, AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION C2 (Cs2) INTERNAL CONNECTION Di2 Tr2 Di1 Tr1 () E1 () Dimension in mm Tolerance oherwise specified Division of Dimension.5 o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±.5 over 3 o 12 ±.8 over 12 o 4 ±1.2 Tolerance () Publicaion Dae : February 214 1

2 MAXIMUM RATINGS (T j=25 C, unless oherwise specified) Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 12 GES Gae-emier volage C-E shor-circuied ± 2 I C DC, T C =94 C (Noe2, 4) 14 Collecor curren I CRM Pulse, Repeiive (Noe3) 28 P o Toal power dissipaion T C =25 C (Noe2, 4) 8925 W (Noe1) I E DC (Noe2) 14 Emier curren I (Noe1) ERM Pulse, Repeiive (Noe3) 28 isol Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC 1 min 25 T j Juncion emperaure - -4 ~ +15 T sg Sorage emperaure (Noe7) ELECTRICAL CHARACTERISTICS (T j=25 C, unless oherwise specified) Symbol Iem Condiions Limis -4 ~ +125 Min. Typ. Max. I CES Collecor-emier cu-off curren CE = CES, G-E shor-circuied ma I GES Gae-emier leakage curren GE = GES, C-E shor-circuied μa GE(h) Gae-emier hreshold volage I C =14 ma, CE = CEsa C ies Collecor-emier sauraion volage Inpu capaciance I C =14 A, GE =15 (Noe5) T j =25 C Refer o he figure of es circui T j =125 C C oes Oupu capaciance CE =1, G-E shor-circuied C res Reverse ransfer capaciance Q G Gae charge CC =6, I C =14 A, GE = nc d(on) Turn-on delay ime CC =6, I C =14 A, GE =±15, r Rise ime d(off) Turn-off delay ime R G =.22 Ω, Inducive load f Fall ime EC (Noe1) rr (Noe1) Emier-collecor volage I E =14 A, G-E shor-circuied, Refer o he figure of es circui (Noe5) T j =25 C T j =125 C Reverse recovery ime CC =6, I E =14 A, GE =±15, ns Q rr (Noe1) Reverse recovery charge R G=.22 Ω, Inducive load μc E on Turn-on swiching energy per pulse CC=6, I C=I E=14 A, E off Turn-off swiching energy per pulse GE=±15, R G=.22 Ω, T j =15 C, E rr (Noe1) Reverse recovery energy per pulse Inducive load mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, T C =25 C (Noe4) A A C Uni nf ns mj mω r g Inernal gae resisance Per swich Ω Publicaion Dae : February 214 2

3 THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. R h(j-c)q Juncion o case, per Inverer IGBT (Noe4) Thermal resisance R h(j-c)d Juncion o case, per Inverer DIODE (Noe4) R h(c- s ) Conac hermal resisance MECHANICAL CHARACTERISTICS Case o hea sink, per 1/2 module, Thermal grease applied (Noe4, 6) Symbol Iem Condiions Uni K/kW K/kW Limis Min. Typ. Max. M Main erminals M 6 screw N m Mouning orque M s Mouning o hea sink M 6 screw N m d s d a Creepage disance Clearance Terminal o erminal Terminal o base plae Terminal o erminal Terminal o base plae m mass g e c Flaness of base plae On he cenerline X, Y1, Y2 (Noe8) μm Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free wheeling diode (DIODE). 2. Juncion emperaure (T j ) should no increase beyond T jmax raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T j ) dose no exceed T jmax raing. 4. Case emperaure (T C) and hea sink emperaure (T s) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. The hea sink hermal resisance should measure jus under he chips. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. Refer o he figure of es circui. 6. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 7: The operaion emperaure is resrained by he permission emperaure of female connecor housing. 8. Base plae (mouning side) flaness measuremen poins (X, Y1 and Y2) are as follows of he following figure. +: 凸 mouning side Label side mouning side -: 凹 39 mm 39 mm Y1 X mouning side -: 凹 +: 凸 Y2 9. The company name and produc names herein are he rademarks and regisered rademarks of he respecive companies. *. DC curren raing is limied by power erminals. Uni mm mm Publicaion Dae : February 214 3

4 RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. CC (DC) Supply volage Applied across - erminals GEon Gae (-emier drive) volage Applied across -/- erminals R G Exernal gae resisance Per swich Ω CHIP LOCATION (Top view) Tr1/Tr2: IGBT, Di1/Di2: DIODE Uni Dimension in mm, olerance: ±1 mm Publicaion Dae : February 214 4

5 TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % + GE - GE v CE.1 I CM - GE R G I CM vce vge Cs2 Load i C + CC A i C d(on) ~ r d(off) Swiching characerisics es circui and waveforms i CC.1 CC i C i C.1 CC CC i I CM v CE.2 I CM 9 % f 1% A i E i E A I E I rr Q rr =.5 I rr rr rr.5 I rr rr, Q rr es waveform IGBT Turn-on swiching energy IGBT Turn-off swiching energy DIODE Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT GE=15 Shorcircuied Cs2 I C Shorcircuied GE=15 Cs2 I C Shorcircuied Shor- Cs2 circuied I E I EM Shorcircuied Shorcircuied Tr1 Tr2 Di1 Di2 CEsa es circui EC es circui i Cs2 v EC CC I E Publicaion Dae : February 214 5

6 PERFORMANCE CURES COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION OLTAGE CEsa () GE=2 OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS T j=25 C (Chip) GE=15 (Chip) COLLECTOR-EMITTER OLTAGE CE () COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CEsa () COLLECTOR CURRENT I C (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS T j=25 C (Chip) G-E shor-circuied (Chip) I C=28 A I C=14 A I C=56 A GATE-EMITTER OLTAGE GE () EMITTER CURRENT IE (A) T j=125 C T j=125 C T j=25 C T j=25 C EMITTER-COLLECTOR OLTAGE EC () Publicaion Dae : February 214 6

7 PERFORMANCE CURES SWITCHING TIME (ns) SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±15, R G=.22 Ω, T j=125 C, INDUCTIE LOAD f r d(off) COLLECTOR CURRENT I C (A) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±15, R G=.22 Ω, T j=125 C, INDUCTIE LOAD, PER PULSE E on d(on) E off E rr COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) SWITCHING TIME (ns) SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, I C=14 A, GE=±15, T j=125 C, INDUCTIE LOAD d(on ) EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, I C/I E=14 A, GE=±15, T j=125 C, INDUCTIE LOAD, PER PULSE d(off) EXTERNAL GATE RESISTANCE R G (Ω) r f E on E off E rr Publicaion Dae : February 214 7

8 PERFORMANCE CURES CAPACITANCE (nf) GATE-EMITTER OLTAGE GE () CAPACITANCE CHARACTERISTICS G-E shor-circuied, T j=25 C COLLECTOR-EMITTER OLTAGE CE () GATE CHARGE CHARACTERISTICS I C=14 A, T j=25 C CC=4 GATE CHARGE Q G (nc) C ies C oes C res CC= rr (ns), I rr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z h(j- c) FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC=6, GE=±15, R G=.22 Ω, T j=25 C, INDUCTIE LOAD EMITTER CURRENT I E (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single pulse, T C=25 C R h(j-c)q=14 K/kW, R h(j-c)d=23 K/kW TIME (S) I rr rr Publicaion Dae : February 214 8

9 Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page ( When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED. Publicaion Dae : February 214 9

< IGBT MODULES > CM600DU-12NFH HIGH POWER HIGH FREQUENTLY SWITCHING USE INSULATED TYPE

< IGBT MODULES > CM600DU-12NFH HIGH POWER HIGH FREQUENTLY SWITCHING USE INSULATED TYPE Dual (Half-Bridge) Collecor curren I C...... 6A Collecor-emier volage CES... 6 Maximum juncion emperaure T jmax... 5 C Fla base Type Copper base plae RoHS Direcive complian UL Recognized under UL557, File

More information

<IGBT Modules> CM500C2Y-24S HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM500C2Y-24S HIGH POWER SWITCHING USE INSULATED TYPE dual pack (Emier common) Collecor curren IC...... 5 0 0 A Collecor-emier volage CES... 1 2 0 0 Maximum juncion emperaure T vjmax... 1 7 5 C Fla base Type Copper base plae Tin plaing ab erminals RoHS Direcive

More information

<IGBT Modules> CM400DY-13T HIGH POWER SWITCHING USE INSULATED TYPE

<IGBT Modules> CM400DY-13T HIGH POWER SWITCHING USE INSULATED TYPE dual swich (half-bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OPTION (Below opions are available.) PC-TIM (Phase Change Thermal Inerface Maerial) pre-apply VCEsa selecion for

More information

< IGBT MODULES > CM35MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

< IGBT MODULES > CM35MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION CIB (Converter+Inverter+Chopper Brake) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Collector current I C...... 35A Collector-emitter voltage

More information

< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION CIB (Converter+Inverter+Chopper Brake) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Collector current I C...... 5A Collector-emitter voltage

More information

IXBN42N170A V CES = 1700V. = 21A V CE(sat) 6.0V t fi. = 20ns. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor

IXBN42N170A V CES = 1700V. = 21A V CE(sat) 6.0V t fi. = 20ns. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Informaion High Volage, High Gain BIMOSFET TM Monolihic Bipolar MOS Transisor IXBNN7A S = 7V 9 = A (sa).v fi = ns E SOT-7B, minibloc E33 Symbol Tes Condiions Maximum Raings S = C

More information

DATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03

DATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes daa of April 1996 File under Discree Semiconducors, SC01 1996 Sep 03 FEATURES Hermeically sealed leaded glass SOD27 (DO-35) package High swiching speed:

More information

Diode RapidSwitchingEmitterControlledDiode. IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDP20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode IDP20C65D2 EmierConrolledDiodeRapid2CommonCahodeSeries Daashee IndusrialPowerConrol EmierConrolledDiodeRapid2CommonCahodeSeries RapidSwichingEmierConrolledDiode Feaures:

More information

Diode RapidSwitchingEmitterControlledDiode. IDP20E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDP20E65D2 EmitterControlledDiode. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode IDP20E65D2 EmierConrolledDiode Daashee IndusrialPowerConrol EmierConrolledDiode RapidSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions

More information

CM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >

CM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT > CM8HCB-34N CM24HCB-34N I C 8 A V CES 7 V -element in pack Insulated type CSTBT TM / Soft recovery diode AlSiC baseplate APPLICATION Traction drives,

More information

Diode RapidSwitchingEmitterControlledDiode. IDP08E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDP08E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode EmierConrolledDiodeRapid1Series Daashee IndusrialPowerConrol EmierConrolledDiodeRapid1Series RapidSwichingEmierConrolledDiode Feaures: 65VEmierConrolledechnology

More information

Diode RapidSwitchingEmitterControlledDiode. IDP30E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl

Diode RapidSwitchingEmitterControlledDiode. IDP30E65D1 EmitterControlledDiodeRapid1Series. Datasheet. IndustrialPowerControl Diode RapidSwichingEmierConrolledDiode EmierConrolledDiodeRapid1Series Daashee IndusrialPowerConrol EmierConrolledDiodeRapid1Series RapidSwichingEmierConrolledDiode Feaures: 650VEmierConrolledechnology

More information

MX6895BETR. -550V Full Bridge Gate Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications. Ordering Information

MX6895BETR. -550V Full Bridge Gate Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications. Ordering Information -550V Full Bridge Gae Driver INTEGRATED CIRCUITS DIVISION Feaures Full Bridge Gae Driver Inernal High Volage Level Shif Funcion Negaive 550V Lamp Supply Volage 3V o 12V CMOS Logic Compaible 8V o 12V Inpu

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) DUAL SWITCH-MODE SOLENOID DRIER HIGH CURRENT CAPABILITY (up o.5a per channel) HIGH OLTAGE OPERATI (up o 46 for power sage) HIGH EFFICIENCY SWITCHMODE OPERATI REGULATED OUTPUT CURRENT (adjusable) FEW EXTERNAL

More information

IXFN64N50PD2 IXFN64N50PD3

IXFN64N50PD2 IXFN64N50PD3 PolarHV TM HiPerFET Power MOSFETs Boos & Buck Configuraions (Ulra-fas FRED Diode) IXFN6N5PD IXFN6N5PD S I D5 R DS(on) = = 5A 85m ns N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic Diode D D minibloc

More information

PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View

PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View HEXFET Power MOSFET dvanced Process Technology Ulra Low On-Resisance ual N and P Channel Mosfe Surface Moun vailable in Tape & Reel ynamic dv/d Raing Fas Swiching escripion PRELIMINRY N-CHNNEL MOSFET 8

More information

IR Receiver Module for Light Barrier Systems

IR Receiver Module for Light Barrier Systems New Produc IR Receiver Module for Ligh Barrier Sysems TSSP5838 1926 FEATURES Low supply curren Phoo deecor and preamplifier in one package Inernal filer for 38 khz IR signals Shielding agains EMI Supply

More information

AK8779B Hall Effect IC for Pulse Encoders

AK8779B Hall Effect IC for Pulse Encoders AK8779B Hall Effec IC for Pulse Encoders 1. General Descripion The AK8779B is a Hall effec lach which deecs boh verical and horizonal (perpendicular and parallel o he marked side of he package) magneic

More information

IR Receiver Module for Light Barrier Systems

IR Receiver Module for Light Barrier Systems IR Receiver Module for Ligh Barrier Sysems DESIGN SUPPORT TOOLS 19026 click logo o ge sared FEATURES Up o 2 m for presence sensing Uses modulaed burss a 38 khz 940 nm peak wavelengh PIN diode and sensor

More information

AK8779A Hall Effect IC for Pulse Encoders

AK8779A Hall Effect IC for Pulse Encoders AK8779A Hall Effec IC for Pulse Encoders 1. General Descripion The AK8779A is a Hall effec lach which deecs boh verical magneic field and horizonal magneic field (perpendicular and parallel o he marked

More information

Power losses in pulsed voltage source inverters/rectifiers with sinusoidal currents

Power losses in pulsed voltage source inverters/rectifiers with sinusoidal currents ree-wheeling diode Turn-off power dissipaion: off/d = f s * E off/d (v d, i LL, T j/d ) orward power dissipaion: fw/t = 1 T T 1 v () i () d Neglecing he load curren ripple will resul in: fw/d = i Lavg

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems TSOP.., TSOP4.., TSOP6.., TSOP4.., TSOP44.., TSOP46.. IR Receiver Modules for Remoe Conrol Sysems MECHANICAL DATA Pinning for TSOP4...: = OUT, = GND, = V S Pinning for TSOP...: = OUT, = V S, = GND 667

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems MECHANICAL DATA 2 Pinning for TSOP348.., TSOP344..: = OUT, 2 = GND, 3 = V S Pinning for TSOP322.., TSOP324..: = OUT, 2 = V S, 3 = GND 3 6672 FEATURES Very low supply curren Phoo deecor and preamplifier

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems TSOP32.., TSOP34.. IR Receiver Modules for Remoe 2 3 MECHANICAL DATA Pinning: = GND, 2 = V S, 3 = OUT 94 869 FEATURES Very low supply curren Phoo deecor and preamplifier in one package Inernal filer for

More information

Solid-state Multi-functional Timer

Solid-state Multi-functional Timer Solid-sae Muli-funcional Timer Eigh operaing modes (H3DE-M) and four operaing modes (H3DE-S) cover a wide range of applicaions. Programmable conac enables he building of a self-holding relay circui (-

More information

NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor March 996 NS352P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,

More information

PROFET BTS 736 L2. Smart High-Side Power Switch Two Channels: 2 x 40mΩ Status Feedback

PROFET BTS 736 L2. Smart High-Side Power Switch Two Channels: 2 x 40mΩ Status Feedback PROFET BTS 736 2 Smar igh-side Power Swich Two Channels: 2 x 40mΩ Saus Feedback Produc Summary Package Operaing olage bb(on) 4.75...41 Acive channels one wo parallel On-sae Resisance R ON 40mΩ 20mΩ Nominal

More information

Disribued by: www.jameco.com 1-800-831-4242 The conen and copyrighs of he aached maerial are he propery of is owner. 16K-Bi CMOS PARALLEL E 2 PROM FEATURES Fas Read Access Times: 200 ns Low Power CMOS

More information

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and 80/110A N-hannel Advanced Power MOSFET Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion S80110AT designed by he rench processing

More information

Application Note 5324

Application Note 5324 Desauraion Faul Deecion Opocoupler Gae Drive Producs wih Feaure: PLJ, PL0J, PLJ, PL1J and HCPLJ Applicaion Noe 1. Inroducion A desauraion faul deecion circui provides proecion for power semiconducor swiches

More information

Step Down Voltage Regulator with Reset TLE 6365

Step Down Voltage Regulator with Reset TLE 6365 Sep Down Volage Regulaor wih Rese TLE 6365 Feaures Sep down converer Supply Over- and Under-Volage-Lockou Low Oupu volage olerance Oupu Overvolage Lockou Oupu Under-Volage-Rese wih delay Overemperaure

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems MECHANICAL DATA Pinning for : 1 = OUT, 2 = GND, 3 = V S 1926 FEATURES Very low supply curren Phoo deecor and preamplifier in one package Opimized for Sony and

More information

PRM and VTM Parallel Array Operation

PRM and VTM Parallel Array Operation APPLICATION NOTE AN:002 M and V Parallel Array Operaion Joe Aguilar VI Chip Applicaions Engineering Conens Page Inroducion 1 High-Level Guidelines 1 Sizing he Resisor 4 Arrays of Six or More Ms 5 Sysem

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems 2 MECHNICAL DATA Pinning for TSOP44.., TSOP48..: = OUT, 2 = GND, 3 = V S Pinning for TSOP22.., TSOP24..: = OUT, 2 = V S, 3 = GND 3 6672 FEATURES Improved immuniy

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems 1926 FEATURES Very low supply curren Phoo deecor and preamplifier in one package Inernal filer for PCM frequency Supply volage: 2.5 V o 5.5 V Improved immuniy

More information

Dimensions. Transmitter Receiver ø2.6. Electrical connection. Transmitter +UB 0 V. Emitter selection. = Light on = Dark on

Dimensions. Transmitter Receiver ø2.6. Electrical connection. Transmitter +UB 0 V. Emitter selection. = Light on = Dark on OBE-R-SE Dimensions Transmier.. 7.5 9..5.8 4.9 4 5 M 8.9 7.5 9..5.8 4 5 M 8.9 ø.6 ø.6 Model Number OBE-R-SE Thru-beam sensor wih m fixed cable Elecrical connecion Transmier Feaures BN +UB WH IN Ulra-small

More information

Programmable DC Electronic Load 8600 Series

Programmable DC Electronic Load 8600 Series Daa Shee Programmable DC Elecronic Load The programmable DC elecronic loads provide he performance of modular sysem DC elecronic loads in a compac benchop form facor. Wih fas ransien operaion speeds and

More information

PI90LV022, PI90LVB022

PI90LV022, PI90LVB022 PI9LV, PI9LVB 456789456789456789456789456789456789456789456789456789456789456789456789456789 LVDS Mux/Repeaer Feaures Mees or Exceeds he Requiremens of ANSI TIA/ EIA-644-995 Designed for Signaling Raes

More information

Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg 12V 1A IGB Module MG121S-BN2MM RoHS Features High short circuit capability, self limiting short circuit current IGB 3 CHIP(rench+Field Stop technology) (sat) with positive temperature coefficient Fast

More information

GTZ 25 / 40 / 55. TECHNICAL DATA General features. Category of use: AC51, AC53a

GTZ 25 / 40 / 55. TECHNICAL DATA General features. Category of use: AC51, AC53a GTZ 25 / 40 / 55 THEE-PHASE SOLID STATE ELAYS WITH LOGIC CONTOL Main applicaions Thermoforming Plasic exrusion lines Indusrial ovens and furnaces Hea reamens Conrol applicaions wih high swiching speed

More information

IR Receiver Modules for Remote Control Systems

IR Receiver Modules for Remote Control Systems IR Receiver Modules for Remoe Conrol Sysems 2 MECHNICAL DATA Pinning for TSOP44.., TSOP48..: = OUT, 2 = GND, 3 = V S Pinning for TSOP22.., TSOP24..: = OUT, 2 = V S, 3 = GND 3 6672 FEATURES Low supply curren

More information

MX629. DELTA MODULATION CODEC meets Mil-Std DATA BULLETIN. Military Communications Multiplexers, Switches, & Phones

MX629. DELTA MODULATION CODEC meets Mil-Std DATA BULLETIN. Military Communications Multiplexers, Switches, & Phones DATA BULLETIN MX629 DELTA MODULATION CODEC mees Mil-Sd-188-113 Feaures Mees Mil-Sd-188-113 Single Chip Full Duplex CVSD CODEC On-chip Inpu and Oupu Filers Programmable Sampling Clocks 3- or 4-bi Companding

More information

RGTV00TS65D 650V 50A Field Stop Trench IGBT

RGTV00TS65D 650V 50A Field Stop Trench IGBT RGTVTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).5V P D 276W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High Speed

More information

TSOP322.. IR Receiver Modules for Remote Control Systems VISHAY. Vishay Semiconductors

TSOP322.. IR Receiver Modules for Remote Control Systems VISHAY. Vishay Semiconductors TSOP3.. IR Receiver Modules for Remoe Conrol Sysems Descripion The TSOP3.. - series are miniaurized receivers for infrared remoe conrol sysems. PIN diode and preamplifier are assembled on lead frame, he

More information

TSOP12.. IR Receiver Modules for Remote Control Systems VISHAY. Vishay Semiconductors

TSOP12.. IR Receiver Modules for Remote Control Systems VISHAY. Vishay Semiconductors TSOP1.. IR Receiver Modules for Remoe Conrol Sysems Descripion The TSOP1.. - series are miniaurized receivers for infrared remoe conrol sysems. PIN diode and preamplifier are assembled on lead frame, he

More information

Time Control Technique

Time Control Technique Time Conrol Technique muliimer Mulifuncion Relay MK 785N/2 23928 Your Advanages Up o 1 funcions in one uni Simplified sorage Increased flexibiliy Quick seing of long ime values Opions wih Pluggable Terminal

More information

RGT8BM65D 650V 4A Field Stop Trench IGBT

RGT8BM65D 650V 4A Field Stop Trench IGBT 5V A Field Stop Trench IGBT Datasheet Outline V CES 5V TO-5 I C( C) A V CE(sat) (Typ.).5V P D W () (3) () Features Inner Circuit ) Low Collector - Emitter Saturation Voltage ) Low Switching Loss 3) Short

More information

SLA7075M, SLA7076M, SLA7077M, and SLA7078M. Motor Driver IC Family. Motor Drivers. Sanken Power Devices from Allegro MicroSystems.

SLA7075M, SLA7076M, SLA7077M, and SLA7078M. Motor Driver IC Family. Motor Drivers. Sanken Power Devices from Allegro MicroSystems. Moor SLA7075M, SLA7076M, Daa Shee 28210.05B Moor Driver IC Family The SLA7075M, SLA7076M, moor driver ICs feaure 2-phase sepper unipolar drivers. The clock-in ype inpu inerface allows simplified conrol

More information

Universal microprocessor-based ON/OFF and P programmable controller MS8122A MS8122B

Universal microprocessor-based ON/OFF and P programmable controller MS8122A MS8122B COMPETENCE IN MEASUREMENT Universal microprocessor-based ON/OFF and P programmable conroller MS8122A MS8122B TECHNICAL DESCRIPTION AND INSTRUCTION FOR USE PLOVDIV 2003 1 I. TECHNICAL DATA Analog inpus

More information

IR Receiver for High Data Rate PCM at 455 khz Description

IR Receiver for High Data Rate PCM at 455 khz Description IR Receiver for High Daa Rae PCM a 455 khz Descripion The is a miniaurized receiver for infrared remoe conrol and IR daa ransmission. PIN diode and preamplifier are assembled on lead frame, he epoxy package

More information

RGS00TS65D 650V 50A Field Stop Trench IGBT

RGS00TS65D 650V 50A Field Stop Trench IGBT RGSTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V P D 326W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) Short Circuit

More information

Explanation of Maximum Ratings and Characteristics for Thyristors

Explanation of Maximum Ratings and Characteristics for Thyristors 8 Explanaion of Maximum Raings and Characerisics for Thyrisors Inroducion Daa shees for s and riacs give vial informaion regarding maximum raings and characerisics of hyrisors. If he maximum raings of

More information

D AB Z DETAIL "B" DETAIL "A"

D AB Z DETAIL B DETAIL A QID1215 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q

More information

RGTH60TS65D 650V 30A Field Stop Trench IGBT

RGTH60TS65D 650V 30A Field Stop Trench IGBT RGTH6TS65D 65V 3A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) 3A V CE(sat) (Typ.).6V P D 94W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High

More information

Valve amplifiers for proportional pressure valves

Valve amplifiers for proportional pressure valves Valve amplifiers for proporional pressure valves Type VT-VSPA-, VT-VSPAK- RE 30 Ediion: 03- Replaces: 0.0 Componen series X Suiable for he conrol of all direc and pilo operaed proporional pressure valves

More information

Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd

Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd 2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter

More information

= f 8 f 2 L C. i C. 8 f C. Q1 open Q2 close (1+D)T DT 2. i C = i L. Figure 2: Typical Waveforms of a Step-Down Converter.

= f 8 f 2 L C. i C. 8 f C. Q1 open Q2 close (1+D)T DT 2. i C = i L. Figure 2: Typical Waveforms of a Step-Down Converter. Inroducion Oupu Volage ipple in Sep-Down and Sep-Up Swiching egulaors Oupu volage ripple is always an imporan performance parameer wih DC-DC converers. For inducor-based swiching regulaors, several key

More information

Maintenance/ Discontinued

Maintenance/ Discontinued D Linear Image Seor MN4 -Bi High-esoluion D Linear Image Seor Overview The MN4 is a -pixel high resoluion D linear image seor combining phoo-sies using floaing phoodiodes and D analog shif regisers for

More information

Electrical amplifiers

Electrical amplifiers Elecrical amplifiers RE 30/0.0 Replaces: 09.05 / Type VT-VSPA- and VT-VSPAK- Componen series X H589_d Table of conens Conens Page Feaures Ordering code Funcional descripion and 3 Block circui diagram /

More information

CM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack

CM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack CMTL-NF CMTL-NF IC... CES...6 Iulated Type 6-elements in a pack PPLICTION C drive inverters & Servo controls, etc OUTLINE DRWING & CIRCUIT DIGRM Dimeio in mm.6. 6 ±. -φ. MOUNTING HOLES N P WP P UP CN L

More information

Photo Modules for PCM Remote Control Systems

Photo Modules for PCM Remote Control Systems Phoo Modules for PCM Remoe Conrol Sysems Descripion The HS38B series are miniaurized receivers for infrared remoe conrol sysems. PIN diode and preamplifier are assembled on lead frame, he epoxy package

More information

Half Bridge IGBT Power Module, 600 V, 100 A

Half Bridge IGBT Power Module, 600 V, 100 A Half Bridge IGBT Power Module, 6 V, A VS-GTTP6N PRODUCT SUMMARY V CES I C at T C = 8 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit INT-A-PAK 6 V A.65 V 8 khz to 3 khz INT-A-PAK Half bridge

More information

AN UVLO (Under Voltage Lock Out) FUNCTION Calculation of Minimum Value of IGBT external Gate Resistance RG. Table 2-1.

AN UVLO (Under Voltage Lock Out) FUNCTION Calculation of Minimum Value of IGBT external Gate Resistance RG. Table 2-1. A p p l i c a i o n Noe AN318 IGBT/Power MOSFET Gae Drive Phoocoupler Technical Markeing Deparmen Compound Semiconducor Devices Business Division Analog & Power Devices Business Uni Renesas Elecronics

More information

49.8. Control Relays and Timers. Contents. Product Selection Guide. Timing Relays

49.8. Control Relays and Timers. Contents. Product Selection Guide. Timing Relays Conrol Relays and Timers.8 Produc Selecion Guide Noes Applies o TRN model only. Applies o TRF model only. The E5-248 is baery powered and has hree programmable rigger funcions. This produc may perform

More information

<Intelligent Power Modules> PM100CG1A065/PM100CG1AL065

<Intelligent Power Modules> PM100CG1A065/PM100CG1AL065 FLAT-BASE TYPE SULATED PACKAGE FEATURE a) Adopting Full-Gate CSTBT TM chip. b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is adopted. c) Error output signal

More information

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast

More information

Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A

Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A Molding Type Module IGBT, 2-in-1 Package, 12 V and 3 A VS-GB3TH12N Double INT-A-PAK FEATURES 1 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 15

More information

PERFORMANCE SPECIFICATION SHEET ELECTRON TUBE, RECEIVING TYPE 8233

PERFORMANCE SPECIFICATION SHEET ELECTRON TUBE, RECEIVING TYPE 8233 INCH-POUND MIL-PRF-1/1593E 15 Augus 2012 SUPERSEDING MIL-PRF-1/1593D 17 Augus 2004 DESCRIPTION: Penode, sharp cuoff. Ouline: See figure 1. PERFORMANCE SPECIFICATION SHEET ELECTRON TUBE, RECEIVING TYPE

More information

Conductive Elastomer Waveguide Gaskets

Conductive Elastomer Waveguide Gaskets Conducive Elasomer Waveguide Gaskes WAVEGUIDE GASKES Parker Chomerics offers a selecion of EMI gaske maerials ha provide effecive EMI shielding and pressure sealing for choke, cover and conac flanges.

More information

FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE

FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM6TU- INSULTED PCKGE FM6TU- ID(rms)... DSS... Insulated Type 6-elements in a pack Thermistor inside UL Recognized File No.E8 PPLICTION C motor control of forklift (battery power source), UPS OUTLINE DRING

More information

ECMA-373. Near Field Communication Wired Interface (NFC-WI) 2 nd Edition / June Reference number ECMA-123:2009

ECMA-373. Near Field Communication Wired Interface (NFC-WI) 2 nd Edition / June Reference number ECMA-123:2009 ECMA-373 2 nd Ediion / June 2012 Near Field Communicaion Wired Inerface (NFC-WI) Reference number ECMA-123:2009 Ecma Inernaional 2009 COPYRIGHT PROTECTED DOCUMENT Ecma Inernaional 2012 Conens Page 1 Scope...

More information

Monitoring Relays. Current Monitoring A A DIN. Comat products comply with different international standards and are certified accordingly.

Monitoring Relays. Current Monitoring A A DIN. Comat products comply with different international standards and are certified accordingly. Monioring elays Curren Monioring DI Coma producs comply wih differen inernaion sandas and are cerified accoingly. Curren Monioring elays EOC- EUC-B -05-30 -60 JUST LOOP IT LOD Seing ranges x x 3x 4x 5x

More information

PS22A78-E Transfer-Mold Type Insulated Type

PS22A78-E Transfer-Mold Type Insulated Type Pre. K.Kuriaki,T.Iwagami,T.Nagahara.Iwagami,T.Nagahara Apr. Y.Nagashima 29-Jan- 07 Rev. D T.Nagahara,M.Sakai,Shang,T.Nakano T.Iwagami 4-Jul.- 08 Applications : 0.2~5.5kW/AC400Vrms three-phase motor variable

More information

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

L M DETAIL A SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN MG3QYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module 3 Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit

More information

EXPERIMENT #4 AM MODULATOR AND POWER AMPLIFIER

EXPERIMENT #4 AM MODULATOR AND POWER AMPLIFIER EXPERIMENT #4 AM MODULATOR AND POWER AMPLIFIER INTRODUCTION: Being able o ransmi a radio frequency carrier across space is of no use unless we can place informaion or inelligence upon i. This las ransmier

More information

Mors Smitt Industrial Technology. General purpose relays

Mors Smitt Industrial Technology. General purpose relays Mors Smi Indusrial Technology General purpose relays Mors Smi Indusrial Technology General purpose relays Mors Smi - Indusrial Technology Mors Smi has been manufacuring relays since 1902. Our wide relay

More information

Insulated Gate Bipolar Transistor Ultralow V CE(on), 250 A

Insulated Gate Bipolar Transistor Ultralow V CE(on), 250 A Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7

More information

FSUSB63 3:1 High-Speed USB 2.0 Switch / Multiplexer

FSUSB63 3:1 High-Speed USB 2.0 Switch / Multiplexer FSUSB63 3:1 High-Speed USB 2.0 Swich / Muliplexer Feaures Sw ich Type 3:1 USB Sw ich USB USB 2.0 High-Speed & Full-Speed Complian Break-Before-Make Time 126µs RON 6Ω Typical C ON 6pF Typical Bandw idh

More information

Trigger high-speed, retro-reflective sensors for bottles. Dimensioned drawing

Trigger high-speed, retro-reflective sensors for bottles. Dimensioned drawing Trigger high-speed, rero-reflecive sensors for boles Dimensioned drawing en 03-2014/10 50121192-02 10-30 V DC 0 3.6m 5 khz We reserve he righ o make changes DS_PRK18BFX_en_50121192_02.fm Trigger high-speed,

More information

Discontinued Product

Discontinued Product Disconinued Produc This device is no longer in producion. The device should no be purchased for new design applicaions. Samples are no longer available. Dae of saus change: November 1, 2010 Recommended

More information

Flow Switch LABO-RR.-032-S. Characteristics. Technical data. Ranges

Flow Switch LABO-RR.-032-S. Characteristics. Technical data. Ranges Flow Swich LABO-RR.032-S Simple and economical flow meer for piping diameers from 32 mm o 150 mm Made from plasic (opionally sainless seel) Wih apping sleeve fixing for very rapid insallaion Rero-fiing

More information

The ramp is normally enabled but can be selectively disabled by suitable wiring to an external switch.

The ramp is normally enabled but can be selectively disabled by suitable wiring to an external switch. Vickers Amplifier Cards Power Amplifiers for Proporional Valves EEA-PAM-56*-A-14 Design EEA-PAM-561-A-14 for use wih valve ypes: KDG5V-5, * and KDG5V-7, 1* series EEA-PAM-568-A-14 for use wih valve ypes:

More information

EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A

EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A EMIPAK-B PressFit Power Module -Levels Half-Bridge Inverter Stage, 5 A VS-ETF5Y65U EMIPAK-B (package example) PRODUCT SUMMARY Q - Q IGBT STAGE V CES 65 V V CE(ON) typical at I C = A.7 V Q - Q IGBT STAGE

More information

Application Note AN-1083

Application Note AN-1083 Applicaion Noe AN-1083 Feaures of he Low-Side Family IPS10xx By Fabio Necco, Inernaional Recifier Table of Conens Page Inroducion...1 Diagnosis...1 Inpu Curren vs. Temperaure...1 Selecion of he Resisor

More information

Solid-state Timer. DIN 48 x 48-mm Multifunctional Timer with Many Time Ranges and Operating Modes, and Wide Power Supply Ranges

Solid-state Timer. DIN 48 x 48-mm Multifunctional Timer with Many Time Ranges and Operating Modes, and Wide Power Supply Ranges Solid-sae Timer DIN 48 x 48-mm Mulifuncional Timer wih Many Time Ranges and Operaing Modes, and Wide Supply Ranges A wider power range reduces he number of imer models kep in sock. An 11-pin or 8-pin model

More information

4.5 Biasing in BJT Amplifier Circuits

4.5 Biasing in BJT Amplifier Circuits 4/5/011 secion 4_5 Biasing in MOS Amplifier Circuis 1/ 4.5 Biasing in BJT Amplifier Circuis eading Assignmen: 8086 Now le s examine how we C bias MOSFETs amplifiers! f we don bias properly, disorion can

More information

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), A VS-GASA6UP SOT-7 PRIMARY CHARACTERISTICS V CES 6 V V CE(on) (typical).9 V V GE 5 V I C A Speed 8 khz to 3 khz Package SOT-7 Circuit configuration

More information

H3DS. Solid-state Multi-functional Timer. Ordering Information. DIN Track Mounted, Standard 17.5-mm Width Timer Range

H3DS. Solid-state Multi-functional Timer. Ordering Information. DIN Track Mounted, Standard 17.5-mm Width Timer Range Solid-sae Muli-funcional Timer DIN Track Mouned, Sandard 17.5-mm Widh Timer Range A wide AC/DC power supply range (24 o 230 VAC/ 24 o 48 VDC) reduces he number of imer models kep in sock. Eigh operaing

More information

Electric amplifiers. Table of contents. Features. RE 30095/04.11 Replaces: Types VT 5005 to VT Component series 1X 1/8

Electric amplifiers. Table of contents. Features. RE 30095/04.11 Replaces: Types VT 5005 to VT Component series 1X 1/8 Elecric amplifiers RE 30095/04. Replaces: 05.0 /8 Types VT 5005 o VT 5008 Componen series X 558_d Table of conens Conens Page eaures Ordering code uncional descripion Block diagram / pinou: VT 5005 and

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design

More information

16.5 ADDITIONAL EXAMPLES

16.5 ADDITIONAL EXAMPLES 16.5 ADDITIONAL EXAMPLES For reiew purposes, more examples of boh piecewise linear and incremenal analysis are gien in he following subsecions. No new maerial is presened, so readers who do no need addiional

More information

V CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC

V CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness

More information

MCR-S-...-DCI. Current transducer up to 55 A, programmable and configurable. Data sheet _en_11. 1 Description

MCR-S-...-DCI. Current transducer up to 55 A, programmable and configurable. Data sheet _en_11. 1 Description Curren ransducer up o 55 A, programmable and configurable Daa shee 100241_en_11 PHOENIX CONTACT 2012-06-07 1 Descripion The MCR-S-...-DCI curren ransducers offer users he opion of ordering a preconfigured

More information

Retro-reflective photoelectric sensors with polarization filter. Dimensioned drawing

Retro-reflective photoelectric sensors with polarization filter. Dimensioned drawing Rero-reflecive phooelecric sensors wih polarizaion filer Dimensioned drawing en 10-2011/04 50105364 1 khz 0 5m We reserve he righ o make changes DS_PRK3B_Sandard_EL_en.fm 10-30 V DC A 2 LS Polarized rero-reflecive

More information

Special Insert. Everything you wanted to know about Type B residual current circuit breakers but never dared to ask

Special Insert. Everything you wanted to know about Type B residual current circuit breakers but never dared to ask Special Inser Everyhing you waned o know abou Type B residual curren circui breakers bu never dared o ask Claudio Amadori: R&D ABB 1 Figure 1 - Marking of he Type B residual curren circui breakers Type

More information

NXH160T120L2Q2F2SG. Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT

NXH160T120L2Q2F2SG. Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT NXH6TLQFSG Split T-Type NPC Power Module V, 6 A IGBT, 6 V, A IGBT The NXH6TLQFSG is a power module containing a split T type neutral point clamped three level inverter, consisting of two 6 A / V Half Bridge

More information

AOZ7111. Critical Conduction Mode PFC Controller. Features. General Description. Applications. Typical Application AOZ7111

AOZ7111. Critical Conduction Mode PFC Controller. Features. General Description. Applications. Typical Application AOZ7111 Criical Conducion Mode PFC Conroller General Descripion The AOZ7111 is an acive power facor correcion (PFC) conroller for boos PFC applicaions ha operae in criical conducion mode (CRM). The device uses

More information

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

TLE 8088 EM. Data Sheet. Automotive Power. Engine management IC for Small Engines. Rev 1.0,

TLE 8088 EM. Data Sheet. Automotive Power. Engine management IC for Small Engines. Rev 1.0, Engine managemen IC for Small Engines Daa Shee Rev 1.0, 2012-10-01 Auomoive Power Table of Conens Table of Conens 1 Overview....................................................................... 3 2 Block

More information

Protection Strategies for IGBT Current Source Inverters

Protection Strategies for IGBT Current Source Inverters Proecion Sraegies for IGBT Curren Source Inverers M. Haberberger 1, F. W. Fuchs 2 1 2 Power Elecronics and Elecrical Drives Chrisian-Albrechs-Universiy Kiel, Germany E-Mail: 1 mkh@f.uni-kiel.de, 2 fwf@f.uni-kiel.de

More information