IXBN42N170A V CES = 1700V. = 21A V CE(sat) 6.0V t fi. = 20ns. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor

Size: px

Start display at page:

Download "IXBN42N170A V CES = 1700V. = 21A V CE(sat) 6.0V t fi. = 20ns. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor"

Shana Lang
6 years ago
Views:

1 Preliminary Technical Informaion High Volage, High Gain BIMOSFET TM Monolihic Bipolar MOS Transisor IXBNN7A S = 7V 9 = A (sa).v fi = ns E SOT-7B, minibloc E33 Symbol Tes Condiions Maximum Raings S = C o C 7 V V CGR = C o C, R GE = MΩ 7 V V GES Coninuous ± V V GEM Transien ± 3 V = C 3 A 9 = 9 C A M = C, ms A SSOA V GE = V, T VJ = C, R G = Ω M = A (RBSOA) Clamped Inducive Load 3 V T SC V GE = V, S = V, T = C J (SCSOA) R G = Ω, non repeiive μs P C = C 33 W C M C T sg C V ISOL /Hz = min V~ I ISOL ma = s 3 V~ M d Mouning Torque./3 Nm/lb.in. Terminal Connecion Torque.3/. Nm/lb.in. Weigh 3 g Feaures G E G = Gae, C = Collecor, E = Emier eiher emier erminal can be used as Main or Kelvin Emier Inernaional Sandard Package minibloc, wih Aluminium Niride Isolaion Square RBSOA V~ Isolaion Volage High Blocking Volage Inernaional Sandard Package Ani-Parallel Diode Low Conducion Losses C E Advanages Symbol Tes Condiions Characerisic Values ( = C Unless Oherwise Specified) Min. Typ. Max. BS = μa = V 7 V V GE(h) = 7μA, = V GE.. V ES =. S = V μa = C. ma I GES = V = ± V ± na (sa) = 9 = V, Noe.. V = C.3 V Low Gae Drive Requiremen High Power Densiy Applicaions Swich-Mode and Resonan-Mode Power Supplies Uninerrupible Power Supplies (UPS) AC Moor Drives Capacior Discharge Circuis AC Swiches IXYS CORPORATION, All Righs Reserved DS9933A(/)

2 IXBNN7A Symbol Tes Condiions Characerisic Values ( = C Unless Oherwise Specified) Min. Typ. Max. g fs = 9, = V, Noe 3 S C ies 39 pf C oes = V = V, f = MHz 7 pf C res 7 pf Q g(on) nc Q ge = 9 = V, =. S 3 nc Q gc nc d(on) 9 ns Inducive load, T J = C ri 7 ns I E C = 9 = V on 3.3 mj V CE =. S, R G = Ω d(off) ns Diode Type = DH-A fi ns Noe E off.3 mj d(on) 9 ns ri Inducive load, = C ns E on = 9 = V. mj d(off) =. S, R G = Ω ns fi Diode Type = DH-A ns E off Noe.3 mj R hjc. C/W R hcs. C/W SOT-7B minibloc (IXXN) Reverse Diode Symbol Tes Condiions Characerisic Values ( = C Unless Oherwise Specified) Min. Typ. Max. V F I F = 9 = V. V rr I 33 ns F = A = V, -di F /d = A/μs I RM V A R = V = V Noe : Pulse es, 3μs, duy cycle, d %. PRELIMINARY TECHNICAL INFORMATION The produc presened herein is under developmen. The Technical Specificaions offered are derived from daa gahered during objecive characerizaions of preliminary engineering los; bu also may ye conain some informaion supplied during a pre-producion design evaluaion. IXYS reserves he righ o change limis, es condiions, and dimensions wihou noice. IXYS Reserves he Righ o Change Limis, Tes Condiions and Dimensions. IXYS MOSFETs and IGBTs are covered,3,9,93,,9,9,37,,,,, B,3,3,77, 7,,73 B 7,7,33B by one or more of he following U.S. paens:,,7,7,,3,37,3,,9,3 B,3,33,7, B,79,9 7,3,97 B,,,3,79,7,7,,7,3,7 B,3,,7,3,77,7 B 7,7,37

3 IXBNN7A Fig.. Oupu = ºC Fig.. Exended Oupu = ºC 7 3 V GE = V V V 9V V 7V V GE = V V V V 9V V V V V Fig. 3. Oupu = ºC V GE = V V V 9V V 7V V V VCE(sa) - Normalized V GE = V Fig.. Dependence of (sa) on Juncion Temperaure = A Degrees Cenigrade Fig.. Collecor-o-Emier Volage vs. Gae-o-Emier Volage Fig.. Inpu Admiance = ºC 9 VCE - Vols A 7 3 = ºC ºC - ºC A V GE - Vols V GE - Vols IXYS CORPORATION, All Righs Reserved

4 IXBNN7A 3 Fig. 7. Transconducance = - ºC ºC = V I G = ma Fig.. Gae Charge g f s - Siemens 3 ºC VGE - Vols Amperes Q G - NanoCoulombs Fig. 9. Forward Volage Drop of Inrinsic Diode, Fig.. Capaciance IF - Amperes T JJ = ºC = ºC Capaciance - PicoFarads, C ies C oes C res V F - Vols f = MHz Fig.. Reverse-Bias Safe Operaing Area Fig.. Maximum Transien Thermal Impedance 7 3 Z(h)JC - ºC / W.. = ºC R G = Ω dv / d < V / ns..... Pulse Widh - Second IXYS Reserves he Righ o Change Limis, Tes Condiions and Dimensions.

5 IXBNN7A Fig. 3. Forward-Bias Safe Operaing = ºC Fig.. Forward-Bias Safe Operaing = 7ºC (sa) Limi (sa) Limi µs µs µs ms µs ms. = ºC = ºC Single Pulse ms DC. = ºC = 7ºC Single Pulse ms DC.,,.,, 7 Fig.. Inducive Swiching Energy Loss vs. Gae Resisance 3 Fig.. Inducive Swiching Energy Loss vs. Collecor Curren E off E on TJ = ºC = V = V E off E on = ºC = V = V = ºC Eoff - MilliJoules 3 E on - MilliJoules Eoff - MilliJoules 3 = ºC Eon - MilliJoules R G - Ohms Amperes Fig. 7. Inducive Swiching Energy Loss vs. Juncion Temperaure Fig.. Inducive Turn-off Swiching Times vs. Gae Resisance E off E on RG = Ω = V f i d(off) = ºC = V Eoff - MilliJoules 3 = V Eon - MilliJoules f i - Nanoseconds = V 3 3 d(off) - Nanoseconds Degrees Cenigrade R G - Ohms IXYS CORPORATION, All Righs Reserved

6 IXBNN7A Fig. 9. Inducive Turn-off Swiching Times vs. Collecor Curren Fig.. Inducive Turn-off Swiching Times vs. Juncion Temperaure f i - Nanoseconds = ºC = ºC f i d(off) R G = Ω = V = V d(off) - Nanoseconds f i - Nanoseconds f i d(off) R G = Ω = V = V, A d(off) - Nanoseconds Amperes Degrees Cenigrade Fig.. Inducive Turn-on Swiching Times vs. Gae Resisance Fig.. Inducive Turn-on Swiching Times vs. Collecor Curren r i - Nanoseconds r i d(on) = ºC = V = V d(on) - Nanoseconds r i - Nanoseconds r i d(on) R G = Ω = V = V = ºC = ºC d(on) - Nanoseconds R G - Ohms Amperes Fig. 3. Inducive Turn-on Swiching Times vs. Juncion Temperaure r i d(on) R G = Ω = V r i - Nanoseconds = V 3 d(on) - Nanoseconds Degrees Cenigrade IXYS Reserves he Righ o Change Limis, Tes Condiions and Dimensions. IXYS REF: B_N7A(7N)--

IXFN64N50PD2 IXFN64N50PD3

IXFN64N50PD2 IXFN64N50PD3 PolarHV TM HiPerFET Power MOSFETs Boos & Buck Configuraions (Ulra-fas FRED Diode) IXFN6N5PD IXFN6N5PD S I D5 R DS(on) = = 5A 85m ns N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic Diode D D minibloc